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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Diode Element Material | Number of Terminals | Date Of Intro | Forward Voltage-Max (VF) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Rohs Code | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Applications | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Diode Type | Case Connection | Output Current-Max | Number of Phases | Rep Pk Reverse Voltage-Max | Non-rep Pk Forward Current-Max | Reverse Current-Max | Reverse Recovery Time-Max | Reverse Test Voltage |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипBAV23Anlielectronics Тип | NXP Semiconductors |
0.225A, 250V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 4 | - | 1.25 V | NXP SEMICONDUCTORS | 1 | 2 | 150 °C | -65 °C | PLASTIC/EPOXY | PLASTIC PACKAGE-4 | RECTANGULAR | SMALL OUTLINE | Transferred | - | 0.25 W | Yes | e3 | Yes | EAR99 | Tin (Sn) | - | HALOGEN FREE | 8541.10.00.70 | DUAL | GULL WING | 260 | compliant | 30 | 4 | - | R-PDSO-G4 | Not Qualified | SEPARATE, 2 ELEMENTS | RECTIFIER DIODE | - | 0.225 A | - | 250 V | 2.5 A | 0.1 μA | 0.05 μs | 200 V | ||
| BAV23 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип1PS79SB10Anlielectronics Тип | NXP Semiconductors |
DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC, SC-79, 2 PIN, Signal Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 2 | - | 0.8 V | NXP SEMICONDUCTORS | 1 | 1 | 125 °C | - | PLASTIC/EPOXY | ULTRA SMALL, PLASTIC, SC-79, 2 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-79 | - | Yes | e3 | Yes | EAR99 | Tin (Sn) | - | - | 8541.10.00.70 | DUAL | FLAT | 260 | compliant | 30 | 2 | - | R-PDSO-F2 | Not Qualified | SINGLE | RECTIFIER DIODE | - | 0.2 A | 1 | 30 V | 0.6 A | - | - | - | ||
| 1PS79SB10 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPMEG100V060ELPDAnlielectronics Тип | NXP Semiconductors |
RECTIFIER DIODE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 3 | 2016-05-20 | 0.84 V | NXP SEMICONDUCTORS | - | 1 | 175 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | 1.66 W | - | - | - | EAR99 | - | EFFICIENCY | - | - | DUAL | FLAT | - | unknown | - | - | AEC-Q101; IEC-60134 | R-PDSO-F3 | - | SINGLE | RECTIFIER DIODE | CATHODE | - | 1 | 100 V | 130 A | 0.45 μA | 0.008 μs | - | ||
| PMEG100V060ELPD | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPMEG10010ELRAnlielectronics Тип | NXP Semiconductors |
Description: SIGNAL DIODE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | - | SOD123W, 2 PIN | - | - | Transferred | - | - | - | - | - | EAR99 | - | - | - | 8541.10.00.80 | - | - | - | unknown | - | - | - | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | - | - | ||
| PMEG10010ELR | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPMEG060V050EPDAnlielectronics Тип | NXP Semiconductors |
RECTIFIER DIODE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 3 | - | 0.56 V | NXP SEMICONDUCTORS | - | 1 | 175 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | 1.66 W | - | - | - | EAR99 | - | EFFICIENCY | FREE WHEELING DIODE | - | DUAL | FLAT | - | unknown | - | - | AEC-Q101; IEC-60134 | R-PDSO-F3 | - | SINGLE | RECTIFIER DIODE | CATHODE | - | 1 | 60 V | 160 A | 400 μA | 0.012 μs | - | ||
| PMEG060V050EPD | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипBAS321Anlielectronics Тип | NXP Semiconductors |
DIODE 0.25 A, 250 V, SILICON, SIGNAL DIODE, PLASTIC, SC-76, 2 PIN, Signal Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 2 | - | 1 V | NXP SEMICONDUCTORS | 1 | 1 | 150 °C | - | PLASTIC/EPOXY | PLASTIC, SC-76, 2 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-76 | 0.3 W | Yes | e3 | Yes | EAR99 | Tin (Sn) | - | - | 8541.10.00.70 | DUAL | GULL WING | 260 | compliant | 30 | 2 | - | R-PDSO-G2 | Not Qualified | SINGLE | RECTIFIER DIODE | - | 0.25 A | 1 | 250 V | 9 A | - | 0.05 μs | - | ||
| BAS321 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипBAS70-06WAnlielectronics Тип | NXP Semiconductors |
Description: 0.07A, 70V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-70, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 3 | - | 0.41 V | NXP SEMICONDUCTORS | 1 | 2 | 150 °C | - | PLASTIC/EPOXY | PLASTIC, SC-70, 3 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-70 | - | Yes | e3 | Yes | EAR99 | Tin (Sn) | - | - | 8541.10.00.70 | DUAL | GULL WING | 260 | compliant | 30 | 3 | - | R-PDSO-G3 | Not Qualified | COMMON ANODE, 2 ELEMENTS | RECTIFIER DIODE | - | 0.07 A | - | 70 V | 0.1 A | - | - | - | ||
| BAS70-06W | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPMEG2010EAAnlielectronics Тип | NXP Semiconductors |
1A, 20V, SILICON, SIGNAL DIODE, PLASTIC, SC-76, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 2 | - | 0.27 V | NXP SEMICONDUCTORS | 1 | 1 | 125 °C | - | PLASTIC/EPOXY | PLASTIC, SC-76, 2 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-76 | - | Yes | e3 | Yes | EAR99 | Tin (Sn) | - | - | 8541.10.00.80 | DUAL | GULL WING | 260 | compliant | 30 | 2 | - | R-PDSO-G2 | Not Qualified | SINGLE | RECTIFIER DIODE | - | 1 A | 1 | 20 V | 5 A | - | - | - | ||
| PMEG2010EA | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPMEG4020ERAnlielectronics Тип | NXP Semiconductors |
Description: 2A, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 2 | - | - | NXP SEMICONDUCTORS | 1 | 1 | 150 °C | - | PLASTIC/EPOXY | PLASTIC PACKAGE-2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | 0.95 W | Yes | - | Yes | EAR99 | Pure Tin (Sn) | EFFICIENCY | - | 8541.10.00.80 | DUAL | FLAT | NOT SPECIFIED | unknown | NOT SPECIFIED | 2 | - | R-PDSO-F2 | Not Qualified | SINGLE | RECTIFIER DIODE | - | 2 A | 1 | - | 50 A | - | - | - | ||
| PMEG4020ER | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPMEG3015EHAnlielectronics Тип | NXP Semiconductors |
Description: 1.5A, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 2 | - | 0.16 V | NXP SEMICONDUCTORS | 1 | 1 | 150 °C | - | PLASTIC/EPOXY | PLASTIC PACKAGE-2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | 0.83 W | Yes | e3 | Yes | EAR99 | Tin (Sn) | EFFICIENCY | - | 8541.10.00.80 | DUAL | FLAT | 260 | compliant | 30 | 2 | - | R-PDSO-F2 | Not Qualified | SINGLE | RECTIFIER DIODE | - | 1.5 A | 1 | 30 V | 9 A | - | - | - | ||
| PMEG3015EH | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPMEG6030ELPAnlielectronics Тип | NXP Semiconductors |
Description: RECTIFIER DIODE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 2 | - | 0.67 V | NXP SEMICONDUCTORS | - | 1 | 175 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | 0.75 W | - | - | - | EAR99 | - | EFFICIENCY | - | - | DUAL | FLAT | - | unknown | - | - | AEC-Q101; IEC-60134 | R-PDSO-F2 | - | SINGLE | RECTIFIER DIODE | - | - | 1 | 60 V | 70 A | 1 μA | 0.012 μs | - | ||
| PMEG6030ELP | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипBAT54XYAnlielectronics Тип | NXP Semiconductors |
0.2A, 4 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-88, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 6 | - | 0.24 V | NXP SEMICONDUCTORS | 1 | 4 | 125 °C | -55 °C | PLASTIC/EPOXY | PLASTIC, SC-88, 6 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-88 | - | Yes | e3 | Yes | EAR99 | Tin (Sn) | - | - | 8541.10.00.70 | DUAL | GULL WING | 260 | compliant | 30 | 6 | - | R-PDSO-G6 | Not Qualified | 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | RECTIFIER DIODE | - | 0.2 A | - | 30 V | 0.6 A | - | - | - | ||
| BAT54XY | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипBAS321/8Anlielectronics Тип | NXP Semiconductors |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BAS321/8 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип1PS10SB62Anlielectronics Тип | NXP Semiconductors |
DIODE 0.02 A, SILICON, SIGNAL DIODE, 1 X 0.60 MM, 0.50 MM HEIGHT, ULTRA SMALL LEADLESS , PLASTIC PACKAGE-2, Signal Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 2 | - | 0.8 V | NXP SEMICONDUCTORS | - | 1 | 150 °C | - | PLASTIC/EPOXY | R-PBCC-N2 | RECTANGULAR | CHIP CARRIER | Obsolete | DFN | - | Yes | e3 | - | EAR99 | TIN | GENERAL PURPOSE | - | 8541.10.00.70 | BOTTOM | NO LEAD | - | unknown | - | 2 | - | R-PBCC-N2 | Not Qualified | SINGLE | RECTIFIER DIODE | - | 0.02 A | 1 | 40 V | - | - | - | - | ||
| 1PS10SB62 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипBYX56-600RAnlielectronics Тип | NXP Semiconductors |
RECTIFIER DIODE,600V V(RRM),DO-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | 1.8 V | NXP SEMICONDUCTORS | - | 1 | 175 °C | - | - | - | - | - | Active | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | compliant | - | - | - | - | - | SINGLE | RECTIFIER DIODE | - | 48 A | 1 | 600 V | 800 A | - | - | - | ||
| BYX56-600R | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPMEG6020EPASAnlielectronics Тип | NXP Semiconductors |
RECTIFIER DIODE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 3 | - | 0.575 V | NXP SEMICONDUCTORS | - | 1 | 150 °C | -55 °C | PLASTIC/EPOXY | S-PDSO-N3 | SQUARE | SMALL OUTLINE | Transferred | - | 0.52 W | - | - | - | EAR99 | - | EFFICIENCY | FREE WHEELING DIODE | - | DUAL | NO LEAD | - | unknown | - | - | AEC-Q101; IEC-60134 | S-PDSO-N3 | - | SINGLE | RECTIFIER DIODE | CATHODE | - | 1 | 60 V | 18 A | 250 µA | 0.0055 µs | - | ||
| PMEG6020EPAS | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPBYR16035TVAnlielectronics Тип | NXP Semiconductors |
Description: 80A, 35V, SILICON, RECTIFIER DIODE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | SILICON | 3 | - | - | NXP SEMICONDUCTORS | - | 2 | - | - | PLASTIC/EPOXY | R-PUFM-D3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | EAR99 | - | POWER | - | 8541.10.00.80 | UPPER | SOLDER LUG | - | unknown | - | - | - | R-PUFM-D3 | Not Qualified | - | RECTIFIER DIODE | - | 80 A | 1 | 35 V | 1080 A | - | - | - | ||
| PBYR16035TV | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипBYX97-1600RAnlielectronics Тип | NXP Semiconductors |
Description: RECTIFIER DIODE,1.6KV V(RRM),DO-5VAR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | 1.45 V | NXP SEMICONDUCTORS | - | 1 | 150 °C | - | - | - | - | - | Active | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | compliant | - | - | - | - | - | SINGLE | RECTIFIER DIODE | - | 47 A | 1 | 1600 V | 800 A | - | - | - | ||
| BYX97-1600R | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипRB520CS3002LAnlielectronics Тип | NXP Semiconductors |
DIODE SIGNAL DIODE, Signal Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | - | SOD-882, DFN1006-2, 2 PIN | - | - | Transferred | - | - | Yes | - | - | EAR99 | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | RECTIFIER DIODE | - | - | - | - | - | - | - | - | ||
| RB520CS3002L | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPMEG2010EPKAnlielectronics Тип | NXP Semiconductors |
1A, 20V, SILICON, SIGNAL DIODE, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | SILICON | 2 | - | - | NXP SEMICONDUCTORS | 1 | 1 | 150 °C | -55 °C | PLASTIC/EPOXY | LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | 0.41 W | Yes | e3 | - | EAR99 | TIN | - | - | 8541.10.00.80 | DUAL | NO LEAD | - | unknown | - | 2 | AEC-Q101 | R-PDSO-N2 | - | SINGLE | RECTIFIER DIODE | CATHODE | 1 A | 1 | 20 V | - | - | - | - | ||
| PMEG2010EPK |
Индекс :
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