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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Material | Diode Element Material | Number of Terminals | Automotive | Base Product Number | ECCN (US) | EU RoHS | Forward Voltage-Max (VF) | HTS | Ihs Manufacturer | Lead Shape | Manufacturer | Manufacturer Part Number | Maximum Continuous Forward Current (A) | Maximum DC Reverse Voltage (V) | Maximum Operating Temperature (°C) | Mfr | Minimum Operating Temperature (°C) | Mounting | Number of Elements | Operating Temperature (Max.) | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Height | Package Length | Package Shape | Package Style | Package Width | Part Life Cycle Code | Part Package Code | PCB changed | Peak Forward Voltage (V) | Peak Non-Repetitive Surge Current (A) | Peak Reverse Current (uA) | Peak Reverse Recovery Time (ns) | Peak Reverse Repetitive Voltage (V) | PPAP | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Standard Package Name | Supplier Package | Supplier Temperature Grade | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Type | Terminal Finish | Applications | Additional Feature | HTS Code | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Element Configuration | Speed | Diode Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Case Connection | Forward Current | Operating Temperature - Junction | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Forward Voltage | Number of Phases | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Capacitance @ Vr, F | Peak Non-Repetitive Surge Current | Non-rep Pk Forward Current-Max | Reverse Current-Max | Voltage - Peak Reverse (Max) | Reverse Recovery Time-Max | Reverse Recovery Time (trr) | Diameter | Radiation Hardening | RoHS Status |
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![]() | Mfr. ТипSCBA2Anlielectronics Тип | Semtech Corporation |
Diode Rectifier Bridge Single 200V 6A 4-Pin Case G-29
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | Through Hole | QC Terminal | 4-Square | - | 4 | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Bulk | 2012 | - | - | - | Active | 1 (Unlimited) | 4 | - | - | - | - | - | - | - | - | UPPER | SOLDER LUG | - | unknown | SCBA2 | 4 | - | - | Not Qualified | - | - | - | Single Phase | 2μA @ 200V | 1V @ 3A | ISOLATED | - | - | 6A | - | 6A | 1V | 1 | - | - | - | - | - | 150A | - | - | 200V | - | - | - | - | Non-RoHS Compliant | ||
| SCBA2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSC3BJ10FFAnlielectronics Тип | Semtech Corporation |
BRIDGE RECT 3PHASE 100V 1.5A
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | Chassis Mount | QC Terminal | 5-Rectangle | - | 5 | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 6 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Bulk | 2012 | - | - | - | Active | 1 (Unlimited) | 5 | - | - | - | - | - | - | - | - | UPPER | UNSPECIFIED | - | unknown | SC3BJ | - | - | - | Not Qualified | BRIDGE, 6 ELEMENTS | - | - | Three Phase | 3μA @ 100V | 1.2V @ 1.5A | - | - | - | - | - | 1.5A | - | 3 | - | - | - | - | - | - | 24A | - | 100V | 0.03μs | - | - | - | Non-RoHS Compliant | ||
| SC3BJ10FF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSC3BH6Anlielectronics Тип | Semtech Corporation |
Diode Rectifier Bridge Single 600V 4A 5-Pin Case G-35
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | Chassis Mount, Screw | QC Terminal | 4-Rectangle | - | 4 | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 6 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Bulk | 2013 | - | e0 | no | Active | 1 (Unlimited) | 5 | - | - | TIN LEAD | - | LOW LEAKAGE CURRENT | - | - | - | UPPER | UNSPECIFIED | - | - | SC3BH | 5 | - | R-MUFM-X5 | - | - | Single | - | Three Phase | 3μA @ 600V | 1V @ 3A | ISOLATED | 4A | - | 4A | - | - | - | 3 | 3μA | 600V | - | - | - | - | - | - | 600V | - | - | - | No | Non-RoHS Compliant | ||
| SC3BH6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSBMA1FAnlielectronics Тип | Semtech Corporation |
BRIDGE RECT 1PHASE 100V 1.5A
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | - | NO | 2 | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4 | 150°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | - | - | - | - | Active | 1 (Unlimited) | 4 | - | - | - | - | - | 8541.10.00.80 | - | - | DUAL | WIRE | - | unknown | SBMA1 | 4 | - | R-PDIP-W4 | Not Qualified | BRIDGE, 4 ELEMENTS | - | - | Single Phase | 2μA @ 100V | 1.2V @ 1A | - | - | - | 1.5A | - | 1.5A | - | 1 | - | - | - | - | - | - | - | - | 100V | 0.15μs | - | - | - | Non-RoHS Compliant | ||
| SBMA1F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSCBH2Anlielectronics Тип | Semtech Corporation |
Diode Rectifier Bridge Single 200V 4A 4-Pin Case G-28
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | Chassis Mount, Through Hole | Chassis Mount | 4-Square | - | 4 | - | - | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Bulk | - | - | - | - | Active | 1 (Unlimited) | 4 | - | - | - | - | - | - | - | - | UPPER | UNSPECIFIED | - | unknown | SCBH2 | 4 | - | - | Not Qualified | - | Single | - | Single Phase | 2μA @ 200V | 1V @ 3A | ISOLATED | 4A | - | 4A | - | - | - | 1 | 2μA | 200V | - | - | - | - | - | - | 200V | - | - | - | - | Non-RoHS Compliant | ||
| SCBH2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANTX1N5416Anlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Through Hole | Axial | NO | - | Axial | - | SILICON | 2 | No | - | EAR99 | Supplier Unconfirmed | 1.1 V | 8541.10.00.80 | SEMTECH CORP | - | Semtech Corporation | JANTX1N5416 | 4.5 | 100 | 175 | Semtech Corporation | -65 | Through Hole | 1 | - | 175 °C | -65 °C | Bulk | UNSPECIFIED | O-XALF-W2 | - | 4.32(Max) | ROUND | LONG FORM | - | Active | - | 2 | 1.1@3A | 150 | 1 | 150 | 100 | No | Discontinued at Digi-Key | - | 1.84 | - | - | - | Case G-4 | - | - | - | - | MIL-PRF-19500/411 | - | - | Active | - | - | - | Switching Diode | - | FAST SOFT RECOVERY | - | 8541.10.00.80 | Rectifier Diodes | - | AXIAL | WIRE | - | unknown | - | 2 | MIL-19500 | O-XALF-W2 | Qualified | Single | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1 µA @ 100 V | 1.1 V @ 3 A | ISOLATED | - | - | 4.5 A | 100 V | 4.5A | - | 1 | - | - | 100 V | - | 430pF @ 4V, 1MHz | - | 150 A | 1 µA | - | 0.15 µs | 150 ns | 4.57(Max) | - | - | ||
| JANTX1N5416 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANTX1N4248Anlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | 24 Weeks | - | Through Hole | Axial | NO | - | Axial | Si | SILICON | 2 | No | 1N4248 | EAR99 | Supplier Unconfirmed | - | 8504.40.95.70 | MICROSEMI CORP | - | Microsemi Corporation | JANTX1N4248 | 1@Ta=55C | 800 | 175 | Semtech Corporation | -65 | Through Hole | 1 | - | 175 °C | -65 °C | Bulk | GLASS | O-LALF-W2 | - | 4.19(Max) | ROUND | LONG FORM | - | Active | - | 2 | 1.2 | 30 | 1 | 2000 | 800 | No | Discontinued at Digi-Key | NOT SPECIFIED | 1.83 | - | No | - | - | Military | - | - | - | * | e0 | No | Active | - | - | EAR99 | Switching Diode | Tin/Lead (Sn/Pb) | - | HIGH RELIABILITY | 8541.10.00.80 | - | - | AXIAL | WIRE | NOT SPECIFIED | not_compliant | - | 2 | MIL-19500 | O-LALF-W2 | Qualified | Single | - | Standard Recovery >500ns, > 200mA (Io) | Standard | 1 µA @ 800 V | 1.2 V @ 1 A | ISOLATED | - | - | 1 A | 800 V | 1A | - | - | - | - | 800 V | - | - | - | - | - | - | 5 µs | 2 µs | 2.79(Max) | - | - | ||
| JANTX1N4248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJAN1N3646Anlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Through Hole | Axial | - | - | Axial | - | - | - | No | - | EAR99 | Not Compliant | - | 8504.40.95.70 | - | - | - | - | 0.6@Ta=55C | 2500 | 175 | Semtech Corporation | -65 | Through Hole | - | - | - | - | Bulk | - | - | - | 5.5(Max) | - | - | - | - | - | 2 | [email protected] | 14 | 1 | 2500 | 2500 | No | Discontinued at Digi-Key | - | - | - | - | - | Case G-12 | Military | - | - | - | MIL-PRF-19500/279 | - | - | Active | - | - | - | Switching Diode | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | Single | - | Standard Recovery >500ns, > 200mA (Io) | Standard | 1 µA @ 2500 V | 5 V @ 250 mA | - | - | -65°C ~ 175°C | - | 2500 V | 600mA | - | - | - | - | - | - | 8pF @ 5V, 1MHz | - | - | - | - | - | 2.5 µs | 2.8(Max) | - | - | ||
| JAN1N3646 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANTX1N6643USAnlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Through Hole | Axial | YES | - | Axial | - | SILICON | 2 | No | - | EAR99 | Supplier Unconfirmed | 1.2 V | 8504.40.95.70 | MICROSEMI CORP | - | Microsemi Corporation | JANTX1N6643US | 0.3@Ta=75C | 75 | 175 | Semtech Corporation | -65 | Surface Mount | 1 | - | 175 °C | -65 °C | Bulk | UNSPECIFIED | O-XELF-R2 | 2.16(Max) | 4.95(Max) | ROUND | LONG FORM | 2.16(Max) | Active | - | 2 | [email protected] | 2.5 | 0.5 | 6 | 50 | No | Discontinued at Digi-Key | NOT SPECIFIED | 1.74 | - | No | MELF | MELF | Military | - | - | - | * | e0 | No | Active | - | - | EAR99 | Switching Diode | Tin/Lead (Sn/Pb) | - | METALLURGICALLY BONDED | 8541.10.00.70 | - | - | END | WRAP AROUND | NOT SPECIFIED | compliant | - | 2 | MIL-19500/578E | O-XELF-R2 | Qualified | Single | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500 nA @ 50 V | 1.2 V @ 100 mA | ISOLATED | - | -65°C ~ 175°C | 0.3 A | 50 V | 300mA | - | - | - | - | 50 V | - | - | - | 2.5 A | 0.5 µA | - | 0.006 µs | 6 ns | - | - | - | ||
| JANTX1N6643US | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANS1N5623Anlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | No | - | - | Supplier Unconfirmed | - | 8541.10.00.80 | - | - | - | - | 2 | 1000 | 175 | - | -65 | Through Hole | - | - | - | - | - | - | - | - | 5.21(Max) | - | - | - | - | - | 2 | 1.2@1A | 25 | 0.5 | 500 | 1000 | No | - | - | - | - | - | - | - | Military | - | - | - | - | - | - | - | - | - | - | Switching Diode | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | Single | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2.79(Max) | - | - | ||
| JANS1N5623 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANS1N5418Anlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | No | - | - | Supplier Unconfirmed | - | 8541.10.00.80 | - | - | - | - | 4.5 | 400 | 175 | - | -65 | Through Hole | - | - | - | - | - | - | - | - | 4.32(Max) | - | - | - | - | - | 2 | 1.1@3A | 150 | 1 | 150 | 400 | No | - | - | - | - | - | - | Case G-4 | Military | - | Bulk|Tape and Reel | - | - | - | - | - | - | - | - | Switching Diode | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | Single | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4.57(Max) | - | - | ||
| JANS1N5418 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANTXV1N5618Anlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | - | - | SILICON | 2 | No | 1N5618 | EAR99 | Not Compliant | - | 8541.10.00.80 | MICROSEMI CORP | Through Hole | Microsemi Corporation | JANTXV1N5618 | 2 | 600 | 175 | Semtech Corporation | -65 | Through Hole | 1 | - | 200 °C | -65 °C | Bulk | GLASS | HERMETIC SEALED, GLASS, A PACKAGE-2 | - | 4.2(Max) | ROUND | LONG FORM | - | Active | - | 2 | 1.1@1A | 30 | 0.5 | 2000 | 600 | No | Discontinued at Digi-Key | NOT SPECIFIED | 2.1 | - | No | Case G-2 | Case G-2 | Military | - | - | - | * | e0 | No | Active | - | - | EAR99 | Switching Diode | Tin/Lead (Sn/Pb) | - | HIGH RELIABILITY | 8541.10.00.80 | - | AVALANCHE | AXIAL | WIRE | NOT SPECIFIED | compliant | - | 2 | MIL-19500 | O-LALF-W2 | Qualified | Single | - | - | RECTIFIER DIODE | - | - | ISOLATED | - | - | 1 A | - | - | - | - | - | - | 600 V | - | - | - | - | - | - | 2 µs | - | 2.8(Max) | - | - | ||
| JANTXV1N5618 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANTXV1N5550USAnlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | SQ-MELF | YES | - | - | - | SILICON | 2 | No | - | EAR99 | Not Compliant | - | 8504.40.95.70 | MICROSEMI CORP | - | Microsemi Corporation | JANTXV1N5550US | 5 | 200 | 175 | Semtech Corporation | -65 | Surface Mount | 1 | - | - | - | Bulk | GLASS | GLASS PACKAGE-2 | 4.72(Max) | 6.99(Max) | ROUND | LONG FORM | 4.72(Max) | Active | - | 2 | 1@3A | 150 | 1 | 2000 | 200 | No | Discontinued at Digi-Key | 20 | 5.39 | - | No | - | - | Military | - | - | - | MIL-PRF-19500/420 | e0 | - | Active | - | - | - | Switching Diode | Tin/Lead (Sn/Pb) | POWER | - | 8541.10.00.80 | - | - | END | WRAP AROUND | 235 | compliant | - | 2 | MIL-19500/420G | O-LELF-R2 | Qualified | Single | - | Standard Recovery >500ns, > 200mA (Io) | Standard | 1 µA @ 200 V | 1 V @ 3 A | ISOLATED | - | - | 3 A | 200 V | 5A | - | 1 | - | - | - | - | 92pF @ 5V, 1MHz | - | 100 A | - | - | - | 2 µs | - | - | - | ||
| JANTXV1N5550US | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANTX1N5621Anlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | - | - | SILICON | 2 | No | - | EAR99 | Supplier Unconfirmed | 1.2 V | 8541.10.00.80 | SENSITRON SEMICONDUCTOR | - | Sensitron Semiconductors | JANTX1N5621 | 2 | 880 | 175 | Semtech Corporation | -65 | Through Hole | 1 | - | 175 °C | - | Bulk | GLASS | E-LALF-W2 | - | 5.21(Max) | ELLIPTICAL | LONG FORM | - | Active | DO-7 | 2 | 1.6@3A | 25 | 0.5 | 300 | 800 | No | Discontinued at Digi-Key | NOT SPECIFIED | 1.58 | - | No | - | - | Military | - | - | - | * | e0 | No | Active | - | - | EAR99 | Switching Diode | Tin/Lead (Sn/Pb) | - | HIGH RELIABILITY | 8541.10.00.80 | Rectifier Diodes | - | AXIAL | WIRE | NOT SPECIFIED | compliant | - | 2 | MIL-19500 | E-LALF-W2 | Qualified | Single | - | - | RECTIFIER DIODE | - | - | ISOLATED | - | - | 1 A | - | - | - | - | - | - | 800 V | DO-7 | - | - | 50 A | - | - | 0.3 µs | - | 2.79(Max) | - | - | ||
| JANTX1N5621 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANTX1N4946Anlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | - | - | SILICON | 2 | No | - | EAR99 | Supplier Unconfirmed | 1.2 V | 8541.10.00.80 | SENSITRON SEMICONDUCTOR | - | Sensitron Semiconductors | JANTX1N4946 | 2 | 600 | 175 | Semtech Corporation | -65 | Through Hole | 1 | - | 175 °C | - | Bulk | GLASS | E-LALF-W2 | - | 4.2(Max) | ELLIPTICAL | LONG FORM | - | Active | - | 2 | 1.2@1A | 25 | 0.5 | 250 | 600 | No | Discontinued at Digi-Key | NOT SPECIFIED | 5.62 | - | No | - | Case G-2 | Military | - | - | - | * | - | No | Active | - | - | EAR99 | Switching Diode | - | - | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | Rectifier Diodes | - | AXIAL | WIRE | NOT SPECIFIED | compliant | - | 2 | MIL-19500 | E-LALF-W2 | Qualified | Single | - | - | RECTIFIER DIODE | - | - | ISOLATED | - | - | 1 A | - | - | - | - | - | - | 600 V | - | - | - | - | - | - | 5 µs | - | 2.8(Max) | - | - | ||
| JANTX1N4946 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANTXV1N5415Anlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Through Hole | Axial | NO | - | Axial | - | SILICON | 2 | No | 1N5415 | EAR99 | Supplier Unconfirmed | 1.1 V | 8504.40.95.70 | SEMTECH CORP | - | Semtech Corporation | JANTXV1N5415 | 4.5 | 50 | 175 | Semtech Corporation | -65 | Through Hole | 1 | - | 175 °C | -65 °C | Bulk | UNSPECIFIED | HERMETIC SEALED, G4, 2 PIN | - | 4.32(Max) | ROUND | LONG FORM | - | Active | - | 2 | 1.1@3A | 150 | 1 | 150 | 50 | No | Discontinued at Digi-Key | - | 5.2 | Non-Compliant | - | - | Case G-4 | Military | - | Bulk|Tape and Reel | - | * | - | - | Active | - | - | - | Switching Diode | - | FAST SOFT RECOVERY | - | 8541.10.00.80 | Rectifier Diodes | - | AXIAL | WIRE | - | unknown | - | 2 | MIL-19500 | O-XALF-W2 | Qualified | Single | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1 µA @ 50 V | 1.1 V @ 3 A | ISOLATED | - | - | 4.5 A | 50 V | 4.5A | - | 1 | - | - | 50 V | - | 550pF @ 4V, 1MHz | - | 150 A | 1 µA | - | 0.15 µs | 150 ns | 4.57(Max) | - | - | ||
| JANTXV1N5415 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANTXV1N5620Anlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | - | - | SILICON | 2 | No | 1N5620 | EAR99 | Supplier Unconfirmed | 1.2 V | 8541.10.00.80 | SENSITRON SEMICONDUCTOR | - | Sensitron Semiconductors | JANTXV1N5620 | 2 | 800 | 175 | Semtech Corporation | -65 | Through Hole | 1 | - | 175 °C | -65 °C | Bulk | GLASS | E-LALF-W2 | - | 4.2(Max) | ELLIPTICAL | LONG FORM | - | Active | - | 2 | 1.1@1A | 30 | 0.5 | 2000 | 800 | No | Discontinued at Digi-Key | NOT SPECIFIED | 5.25 | - | No | - | Case G-2 | Military | - | - | - | * | e0 | No | Active | - | - | EAR99 | Switching Diode | Tin/Lead (Sn/Pb) | - | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | Rectifier Diodes | - | AXIAL | WIRE | NOT SPECIFIED | compliant | - | 2 | MIL-19500 | E-LALF-W2 | Qualified | Single | - | - | RECTIFIER DIODE | - | - | ISOLATED | - | - | 1 A | - | - | - | - | - | - | 800 V | - | - | - | 50 A | - | - | 2 µs | - | 2.8(Max) | - | - | ||
| JANTXV1N5620 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANTX1N3957Anlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Through Hole | Axial | NO | - | Axial | - | SILICON | 2 | No | - | EAR99 | Supplier Unconfirmed | - | 8541.10.00.80 | MICROSEMI CORP | - | Microsemi Corporation | JANTX1N3957 | 1@Ta=100C | 1000 | 175 | Semtech Corporation | -65 | Through Hole | 1 | - | 175 °C | -65 °C | Bulk | GLASS | HERMETIC SEALED, GLASS, A-TYPE PACKAGE-2 | - | 4.2(Max) | ROUND | LONG FORM | - | Active | DO-41 | 2 | 1.1 | 30 | 0.5 | 2000 | 1000 | No | Discontinued at Digi-Key | NOT SPECIFIED | 1.48 | Non-Compliant | No | - | Case G-2 | Military | - | Bulk|Tape and Reel | - | * | e0 | No | Active | - | - | EAR99 | Switching Diode | Tin/Lead (Sn/Pb) | - | HIGH RELIABILITY | 8541.10.00.80 | - | - | AXIAL | WIRE | NOT SPECIFIED | compliant | - | 2 | MIL-19500 | O-LALF-W2 | Qualified | Single | - | Standard Recovery >500ns, > 200mA (Io) | Standard | 500 nA @ 1000 V | 1.1 V @ 1 A | ISOLATED | - | -65°C ~ 175°C | 1 A | 1000 V | 1A | - | - | - | - | 1000 V | DO-41 | - | - | - | - | - | - | 2 µs | 2.8(Max) | - | - | ||
| JANTX1N3957 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJANTXV1N5420Anlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Through Hole | Axial | NO | - | Axial | - | SILICON | 2 | No | 1N5420 | EAR99 | Supplier Unconfirmed | - | 8504.40.95.70 | MICROSEMI CORP | - | Microsemi Corporation | JANTXV1N5420 | 4.5 | 600 | 175 | Semtech Corporation | -65 | Through Hole | 1 | - | - | - | Bulk | UNSPECIFIED | O-XALF-W2 | - | 4.32(Max) | ROUND | LONG FORM | - | Active | - | 2 | 1.1@3A | 150 | 1 | 400 | 600 | No | Discontinued at Digi-Key | NOT SPECIFIED | 1.82 | Non-Compliant | No | - | Case G-4 | Military | - | Bulk|Tape and Reel | - | * | e0 | - | Active | - | - | - | Switching Diode | Tin/Lead (Sn/Pb) | FAST RECOVERY POWER | - | 8541.10.00.80 | - | - | AXIAL | WIRE | NOT SPECIFIED | compliant | - | 2 | MIL-19500/411L | O-XALF-W2 | Qualified | Single | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1 µA @ 600 V | 1.1 V @ 3 A | ISOLATED | - | - | 3 A | 600 V | 4.5A | - | 1 | - | - | - | - | 120pF @ 4V, 1MHz | - | 80 A | - | - | 0.4 µs | 400 ns | 4.57(Max) | - | - | ||
| JANTXV1N5420 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипJAN1N5807USAnlielectronics Тип | Semtech |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | SQ-MELF | YES | - | - | - | SILICON | 2 | No | - | EAR99 | Not Compliant | 0.875 V | 8504.40.95.70 | SENSITRON SEMICONDUCTOR | - | Sensitron Semiconductors | JAN1N5807US | 6@Ta=75C | 50 | 175 | Semtech Corporation | -65 | Surface Mount | 1 | - | 175 °C | -65 °C | Bulk | GLASS | E-LELF-R2 | 3.76(Max) | 5.72(Max) | ELLIPTICAL | LONG FORM | 3.76(Max) | Active | MELF | 2 | 0.875@4A | 125 | 5 | 30 | 50 | No | Discontinued at Digi-Key | NOT SPECIFIED | 5.3 | - | No | - | - | Military | - | - | - | MIL-PRF-19500/477 | e0 | No | Active | - | - | - | Switching Diode | Tin/Lead (Sn/Pb) | ULTRA FAST RECOVERY | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | Rectifier Diodes | - | END | WRAP AROUND | NOT SPECIFIED | compliant | - | 2 | MIL-19500 | E-LELF-R2 | Qualified | Single | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 5 µA @ 50 V | 875 mV @ 4 A | ISOLATED | - | - | 6 A | 50 V | 6A | - | 1 | - | - | 50 V | - | 60pF @ 5V, 1MHz | - | 125 A | - | - | 0.03 µs | 30 ns | - | - | - | ||
| JAN1N5807US |
Индекс :
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