Diodes - Bridge Rectifiers Products For Sale - PDF - Discrete Semiconductor Products -Page16

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Lifecycle Status	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Diode Element Material	Number of Terminals	Avg. Forward Curr (Max)	Breakdown Voltage / V	Factory Pack QuantityFactory Pack Quantity	Forward Voltage-Max (VF)	If - Forward Current	Ihs Manufacturer	Ir - Reverse Current	Manufacturer	Manufacturer Package Code	Manufacturer Part Number	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Mounting	Mounting Styles	Number of Elements	Operating Temp Range	Operating Temperature Classification	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Description	Package Shape	Package Style	Package Type	Part Life Cycle Code	Peak Non-Repetitive Surge Current (Max)	Peak Rep Rev Volt	Peak Reverse Voltage	Phase Type	Power Dissipation (Max)	Product Status	Rad Hardened	Reflow Temperature-Max (s)	Rev Curr	Risk Rank	RoHS	Rohs Code	Unit Weight	Vr - Reverse Voltage	Operating Temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	Termination	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Capacitance	Subcategory	Voltage - Rated DC	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	Termination Style	JESD-30 Code	Qualification Status	Circuit	Configuration	Element Configuration	Diode Type	Current - Reverse Leakage @ Vr	Power Dissipation	Output Current	Voltage - Forward (Vf) (Max) @ If	Case Connection	Forward Current	Max Reverse Leakage Current	Max Surge Current	Output Current-Max	Current - Average Rectified (Io)	Forward Voltage	Average Rectified Current	Number of Phases	Peak Reverse Current	Max Repetitive Reverse Voltage (Vrrm)	Rep Pk Reverse Voltage-Max	JEDEC-95 Code	Peak Non-Repetitive Surge Current	Non-rep Pk Forward Current-Max	Max Forward Surge Current (Ifsm)	Voltage - Peak Reverse (Max)	Breakdown Voltage-Min	Reverse Voltage (DC)	Reverse Recovery Time-Max	Reverse Test Voltage	Vf - Forward Voltage	Height	Length	Width	Thickness	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Lifecycle Status	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Diode Element Material	Number of Terminals	Avg. Forward Curr (Max)	Breakdown Voltage / V	Factory Pack QuantityFactory Pack Quantity	Forward Voltage-Max (VF)	If - Forward Current	Ihs Manufacturer	Ir - Reverse Current	Manufacturer	Manufacturer Package Code	Manufacturer Part Number	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Mounting	Mounting Styles	Number of Elements	Operating Temp Range	Operating Temperature Classification	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Description	Package Shape	Package Style	Package Type	Part Life Cycle Code	Peak Non-Repetitive Surge Current (Max)	Peak Rep Rev Volt	Peak Reverse Voltage	Phase Type	Power Dissipation (Max)	Product Status	Rad Hardened	Reflow Temperature-Max (s)	Rev Curr	Risk Rank	RoHS	Rohs Code	Unit Weight	Vr - Reverse Voltage	Operating Temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	Termination	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Capacitance	Subcategory	Voltage - Rated DC	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	Termination Style	JESD-30 Code	Qualification Status	Circuit	Configuration	Element Configuration	Diode Type	Current - Reverse Leakage @ Vr	Power Dissipation	Output Current	Voltage - Forward (Vf) (Max) @ If	Case Connection	Forward Current	Max Reverse Leakage Current	Max Surge Current	Output Current-Max	Current - Average Rectified (Io)	Forward Voltage	Average Rectified Current	Number of Phases	Peak Reverse Current	Max Repetitive Reverse Voltage (Vrrm)	Rep Pk Reverse Voltage-Max	JEDEC-95 Code	Peak Non-Repetitive Surge Current	Non-rep Pk Forward Current-Max	Max Forward Surge Current (Ifsm)	Voltage - Peak Reverse (Max)	Breakdown Voltage-Min	Reverse Voltage (DC)	Reverse Recovery Time-Max	Reverse Test Voltage	Vf - Forward Voltage	Height	Length	Width	Thickness	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free
	Mfr. Тип MB6M Anlielectronics Тип	LGE	35A 1V@400mA 5uA@600V 800mA 600V -55℃~ 150℃@(Tj) MBM Bridge Rectifiers ROHS Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MB6M LGE RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GBPC2506 Anlielectronics Тип	ON Semiconductor	BRIDGE RECT 1PHASE 600V 25A GBPC Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	ACTIVE (Last Updated: 1 day ago)	Screw	QC Terminal	4-Square, GBPC	-	4	GBPC	16.74g	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Tray	2013	-	-	-	Active	1 (Unlimited)	-	-	-	-	-	150°C	-55°C	-	-	180pF	-	600V	-	-	-	-	25A	-	GBPC2506	-	-	-	-	-	-	Single	Single Phase	5μA @ 600V	83.3W	25A	1.1V @ 12.5A	-	25A	5μA	300A	-	25A	1.1V	25A	-	5μA	600V	-	-	300A	-	300A	600V	-	-	-	-	-	11.23mm	29mm	29mm	-	No	No SVHC	ROHS3 Compliant	Lead Free
GBPC2506 ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MSD100-12 Anlielectronics Тип	Microchip Technology	Bridge Rectifiers Power Module - Diode Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	M-3-5	NO	-	-	-	SILICON	5	-	-	10	1.9 V	100 A	MICROSEMI CORP	-	-	CASE M3	MSD100-12	+ 150 C	-	- 40 C	-	Screw Mount	6	-	-	150 °C	-40 °C	-	UNSPECIFIED	R-XUFM-X5	RECTANGULAR	FLANGE MOUNT	-	Obsolete	-	-	1.2 kV	-	-	-	-	-	-	5.82	Details	Yes	-	1.2 kV	-	-	-	-	-	-	-	-	-	-	EAR99	Three Phase Bridge	-	-	-	-	8541.10.00.80	-	-	-	UPPER	UNSPECIFIED	-	compliant	-	-	-	5	-	R-XUFM-X5	Not Qualified	-	BRIDGE, 6 ELEMENTS	-	BRIDGE RECTIFIER DIODE	-	-	-	-	-	-	-	920 A	100 A	-	-	-	3	-	-	1200 V	-	-	920 A	-	-	1200 V	-	-	-	1.15 V	30 mm	94 mm	54 mm	-	-	-	-	-
MSD100-12 Microchip Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип D4SB80-7000 Anlielectronics Тип	Shindengen	Bridge Rectifiers 150 Amp 800 Volt Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	3S	-	-	-	-	-	-	2.3(A)	-	50	-	-	SHINDENGEN ELECTRIC MANUFACTURING CO LTD	10 uA	-	-	D4SB80-7000	+ 150 C	-	-	Through Hole	Through Hole	1	-	-	-	-	-	-	-	-	-	SIP	Active	150(A)	800(V)	800 V	Single Phase	-	-	No	-	10(mA)	2.32	Details	Yes	0.137568 oz	-	-	Bulk	-	-	e6	-	-	-	-	-	EAR99	Single Phase Bridge	Tin/Bismuth (Sn/Bi)	-	-	-	-	-	-	-	-	-	-	compliant	-	-	-	4	Solder Lead	-	-	-	-	-	-	-	-	-	-	-	-	-	150 A	-	-	0.95(V)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0.95 V	15 mm	25 mm	4.6 mm	-	-	-	-	-
D4SB80-7000 Shindengen RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GBJ606 Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 600V 6A GBJ Сборник данных Сравнение	Min.:1 Mult.:1	-	-	Through Hole	Through Hole	4-SIP, GBJ	-	4	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-65°C~150°C TJ	Tube	2005	-	e0	-	Discontinued	1 (Unlimited)	4	-	-	-	-	-	-	UL RECOGNIZED	-	55pF	-	600V	-	-	235	not_compliant	6A	10	-	4	-	-	Not Qualified	-	-	-	Single Phase	5μA @ 600V	-	6A	1V @ 3A	ISOLATED	-	5μA	170A	-	-	1V	-	1	-	-	-	-	170A	-	-	-	-	-	-	-	-	24.5mm	30.3mm	4.8mm	-	-	No SVHC	Non-RoHS Compliant	Contains Lead
GBJ606 Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип DF02M Anlielectronics Тип	Diodes Incorporated	Diode Rectifier Bridge Single 200V 1A 4-Pin Case DFM Tube Сборник данных Сравнение	Min.:1 Mult.:1	9 Weeks	-	Through Hole	Through Hole	4-EDIP (0.300, 7.62mm)	-	4	-	416.000902mg	SILICON	-	-	200V	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-65°C~150°C TJ	Tube	2004	-	e3	no	Active	1 (Unlimited)	4	SMD/SMT	EAR99	-	Matte Tin (Sn)	-	-	UL RECOGNIZED	-	25pF	-	200V	DUAL	-	260	-	1A	40	DF02	4	-	-	-	-	-	Single	Single Phase	10μA @ 200V	-	1A	1.1V @ 1A	-	1A	-	50A	-	-	1.1V	1A	1	10μA	200V	-	-	50A	-	50A	-	-	140V	-	-	-	3.4mm	8.51mm	6.5mm	-	No	-	ROHS3 Compliant	Lead Free
DF02M Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип NTE5740 Anlielectronics Тип	NTE Electronics, Inc	3 PHASE BRIDGE MODULE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Chassis Mount	Module	NO	-	-	-	SILICON	5	30(A)	-	-	-	-	NTE ELECTRONICS INC	-	NTE Electronics	-	NTE5740	-	NTE Electronics, Inc	-	Screw	-	1	-40C to 150C	Automotive	-	-	Bag	UNSPECIFIED	R-XUFM-X5	RECTANGULAR	FLANGE MOUNT	-	Active	500(A)	800(V)	-	Three Phase	-	Active	No	NOT SPECIFIED	2000(mA)	2.18	-	Yes	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	HIGH RELIABILITY	8541.10.00.80	-	-	-	UPPER	UNSPECIFIED	NOT SPECIFIED	unknown	-	-	-	5	-	R-XUFM-X5	Not Qualified	-	BRIDGE, 6 ELEMENTS	-	Three Phase	2 mA @ 800 V	-	-	1.1 V @ 30 A	ISOLATED	-	-	-	30 A	30 A	1.1(V)	-	3	-	-	800 V	-	-	400 A	-	800 V	-	-	-	-	-	-	-	-	-	-	-	-	-
NTE5740 NTE Electronics, Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GBU6J-BP Anlielectronics Тип	Micro Commercial Co	BRIDGE RECT 1PHASE 600V 6A GBU Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	-	-	Through Hole	4-SIP, GBU	NO	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Tube	2005	-	e3	yes	Active	1 (Unlimited)	4	-	EAR99	-	MATTE TIN (SN)	-	-	UL RECOGNIZED	8541.10.00.80	-	-	-	-	-	NOT SPECIFIED	not_compliant	-	NOT SPECIFIED	GBU6J	4	-	R-PSFM-T4	Not Qualified	-	BRIDGE, 4 ELEMENTS	-	Single Phase	5μA @ 600V	-	-	1V @ 3A	-	-	-	-	6A	6A	-	-	1	-	-	-	-	-	175A	-	600V	600V	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
GBU6J-BP Micro Commercial Co RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип NSR2030QMUTAG Anlielectronics Тип	ON Semiconductor	BRIDGE RECT 1PHASE 30V 2A 4UDFN Сборник данных Сравнение	Min.:1 Mult.:1	5 Weeks	-	Surface Mount	Surface Mount	4-UDFN Exposed Pad	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	125°C TJ	Tape & Reel (TR)	2015	-	-	yes	Active	1 (Unlimited)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NOT SPECIFIED	-	-	NOT SPECIFIED	-	-	-	-	-	-	-	-	Single Phase	20μA @ 30V	-	-	650mV @ 2A	-	2A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	30V	-	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	Lead Free
NSR2030QMUTAG ON Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип RS405L Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 600V 4A RS-4L Сборник данных Сравнение	Min.:1 Mult.:1	-	-	Through Hole	Through Hole	4-SIP, RS-4L	-	4	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Bulk	2003	-	e3	-	Obsolete	1 (Unlimited)	4	-	-	-	Matte Tin (Sn)	-	-	-	-	-	-	600V	-	WIRE	260	-	4A	40	RS405	4	-	-	-	-	-	Single	Single Phase	10μA @ 600V	-	4A	1V @ 3A	-	4A	10μA	200A	-	-	1V	4A	1	10μA	600V	-	-	200A	-	200A	-	-	-	-	-	-	15.7mm	19mm	6.35mm	-	No	-	ROHS3 Compliant	Lead Free
RS405L Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GBJ608-F Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 800V 6A GBJ Сборник данных Сравнение	Min.:1 Mult.:1	9 Weeks	-	Through Hole	Through Hole	4-SIP, GBJ	-	4	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-65°C~150°C TJ	Tube	2006	-	e3	no	Active	1 (Unlimited)	4	Through Hole	-	-	Matte Tin (Sn)	-	-	UL RECOGNIZED	-	-	-	-	-	-	-	-	-	-	-	4	-	-	-	-	-	Single	Single Phase	5μA @ 800V	-	-	1V @ 3A	ISOLATED	6A	-	170A	6A	-	1V	-	1	5μA	800V	-	-	170A	-	-	-	-	560V	-	-	-	24.5mm	30.3mm	4.8mm	-	No	-	ROHS3 Compliant	-
GBJ608-F Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HDS10M-13 Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 1KV 1A HDS Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	-	-	Surface Mount	4-SMD, Gull Wing	YES	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Tape & Reel (TR)	2017	-	e3	-	Active	1 (Unlimited)	4	-	-	-	Matte Tin (Sn)	-	-	-	-	-	-	-	DUAL	-	NOT SPECIFIED	not_compliant	-	NOT SPECIFIED	-	-	-	R-PDSO-G4	-	-	BRIDGE, 4 ELEMENTS	-	Single Phase	5μA @ 1000V	-	-	950mV @ 500mA	-	-	-	-	1A	1A	-	-	1	-	-	-	-	-	30A	-	1kV	1000V	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
HDS10M-13 Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип VUO34-16NO1 Anlielectronics Тип	IXYS	Diode Rectifier Bridge Single 1.6KV 37A 7-Pin V1-A-Pack Сборник данных Сравнение	Min.:1 Mult.:1	20 Weeks	-	Chassis Mount, Screw	Chassis Mount	V1-A	-	7	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C TJ	Bulk	2012	-	-	yes	Active	1 (Unlimited)	7	-	-	-	-	-	-	-	-	-	-	-	UPPER	UNSPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	VUO34	-	-	-	Not Qualified	-	BRIDGE, 6 ELEMENTS	-	Three Phase	20μA @ 1600V	70W	-	1.13V @ 50A	ISOLATED	-	1mA	300A	-	-	1.51V	36A	3	-	-	-	-	320A	-	-	1.6kV	-	-	-	-	-	17mm	63mm	31.6mm	-	-	-	ROHS3 Compliant	-
VUO34-16NO1 IXYS RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CDBHM260L-HF Anlielectronics Тип	Comchip Technology	BRIDGE RECTIFIER 60V 2A MBS2 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	-	Surface Mount	Surface Mount	TO-269AA, 4-BESOP	-	2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~125°C TJ	Tape & Reel (TR)	2011	-	-	-	Active	1 (Unlimited)	-	-	EAR99	-	-	-	-	-	8541.10.00.80	-	-	-	-	-	260	-	-	30	CDBHM260	-	-	-	-	-	BRIDGE, 4 ELEMENTS	-	Single Phase	1mA @ 60V	-	-	700mV @ 2A	-	-	-	50A	2A	2A	-	-	-	-	-	-	-	-	-	-	60V	-	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	Lead Free
CDBHM260L-HF Comchip Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип RS404L Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 400V 4A RS-4L Сборник данных Сравнение	Min.:1 Mult.:1	-	-	Through Hole	Through Hole	4-SIP, RS-4L	-	4	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Bulk	2003	-	e3	-	Obsolete	1 (Unlimited)	4	SMD/SMT	-	-	Matte Tin (Sn)	-	-	-	-	-	-	400V	-	WIRE	260	not_compliant	4A	40	RS404	4	-	-	Not Qualified	-	-	Single	Single Phase	10μA @ 400V	-	-	1V @ 3A	-	-	-	200A	4A	-	1V	-	1	10μA	400V	-	-	200A	-	-	-	-	280V	-	-	-	15.7mm	19mm	6.35mm	-	-	-	ROHS3 Compliant	Lead Free
RS404L Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип NTE5346 Anlielectronics Тип	NTE Electronics, Inc	R-SI BRIDGE 600V 80AMP Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	QC Terminal	4-Square	NO	-	-	-	SILICON	4	80(A)	-	-	1.3 V	-	NTE ELECTRONICS INC	-	NTE Electronics	-	NTE5346	-	NTE Electronics, Inc	-	Screw	-	1	-40C to 125C	Automotive	-	-	Bag	UNSPECIFIED	R-XUFM-X4	RECTANGULAR	FLANGE MOUNT	-	Active	1500(A)	600(V)	-	Single Phase	-	Active	No	NOT SPECIFIED	-	2.11	No	Yes	-	-	-40°C ~ 125°C (TJ)	-	-	-	-	-	-	-	-	Screw Terminals	-	-	-	-	-	-	8541.10.00.80	-	Bridge Rectifier Diodes	-	UPPER	UNSPECIFIED	NOT SPECIFIED	unknown	-	-	-	4	-	R-XUFM-X4	Not Qualified	Full Wave Diode Bridge	BRIDGE, 4 ELEMENTS	-	Single Phase	-	-	-	1.2 V @ 100 A	ISOLATED	-	-	-	80 A	80 A	1.2(V)	-	1	-	-	600 V	-	-	1500 A	-	600 V	-	-	-	-	-	-	-	-	-	-	-	-	-
NTE5346 NTE Electronics, Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип UC3610DWTR Anlielectronics Тип	Texas Instruments	BRIDGE RECT 1PHASE 50V 3A 16SOIC Сборник данных Сравнение	Min.:1 Mult.:1	6 Weeks	ACTIVE (Last Updated: 4 days ago)	Surface Mount	Surface Mount	16-SOIC (0.295, 7.50mm Width)	-	16	-	473.692182mg	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1W	-	-	-	-	-	-	-	-	-	0°C~70°C TA	Tape & Reel (TR)	-	-	e4	yes	Active	2 (1 Year)	16	-	-	-	Nickel/Palladium/Gold (Ni/Pd/Au)	-	-	-	8541.10.00.80	-	-	-	-	GULL WING	260	-	-	-	UC3610	16	-	-	-	-	-	Dual	Single Phase	100μA @ 40V	-	3A	1.3V @ 1A	-	1A	10μA	-	-	-	1.3V	-	1	-	50V	-	MS-013AA	-	-	-	-	-	-	-	40V	-	2.65mm	10.3mm	7.5mm	2.35mm	No	-	ROHS3 Compliant	Lead Free
UC3610DWTR Texas Instruments RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GBU4005 Anlielectronics Тип	Diodes Incorporated	BRIDGE RECT 1PHASE 50V 4A GBU Сборник данных Сравнение	Min.:1 Mult.:1	9 Weeks	-	Through Hole	Through Hole	4-SIP, GBU	-	4	-	3.404012g	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	Tube	2006	-	e3	no	Active	1 (Unlimited)	4	Through Hole	EAR99	-	Matte Tin (Sn)	-	-	UL RECOGNIZED	-	-	-	-	-	-	260	-	-	40	GBU4005	4	-	-	-	-	-	Single	Single Phase	5μA @ 50V	-	-	1V @ 2A	ISOLATED	4A	-	150A	4A	-	1V	-	1	5μA	50V	-	-	150A	-	-	-	-	35V	-	-	-	18.8mm	22.3mm	3.56mm	-	No	-	ROHS3 Compliant	-
GBU4005 Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип DF1504S Anlielectronics Тип	Diodes Incorporated	Diode Rectifier Bridge Single 400V 1.5A 4-Pin Case DFS Tube Сборник данных Сравнение	Min.:1 Mult.:1	9 Weeks	-	Surface Mount	Surface Mount	4-SMD, Gull Wing	-	4	-	299.00242mg	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-65°C~150°C TJ	Bulk	2012	-	e3	no	Active	1 (Unlimited)	4	SMD/SMT	-	-	Matte Tin (Sn)	-	-	UL RECOGNIZED	-	-	-	-	DUAL	-	260	-	-	40	-	4	-	-	-	-	-	Single	Single Phase	10μA @ 400V	-	-	1.1V @ 1.5A	-	-	-	50A	-	1.5A	1.1V	-	1	10μA	400V	-	-	50A	-	-	-	-	280V	-	-	-	3.4mm	8.51mm	6.5mm	-	No	-	ROHS3 Compliant	-
DF1504S Diodes Incorporated RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип VUE50-12NO1 Anlielectronics Тип	IXYS	BRIDGE RECT 3P 1.2KV 50A V1A-PAK Сборник данных Сравнение	Min.:1 Mult.:1	20 Weeks	-	Chassis Mount, Screw	Chassis Mount	V1A-PAK	-	5	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C TJ	Bulk	2000	-	-	yes	Active	1 (Unlimited)	7	-	-	-	-	-	-	UL RECOGNIZED	-	-	-	-	UPPER	UNSPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	VUE	-	-	R-PUFM-X7	Not Qualified	-	BRIDGE, 6 ELEMENTS	-	Three Phase	750μA @ 1200V	-	-	2.55V @ 30A	ISOLATED	-	750μA	200A	-	-	2.55V	50A	3	750μA	1.2kV	-	-	210A	-	-	-	-	-	0.06μs	-	-	17mm	63mm	31.6mm	-	-	-	ROHS3 Compliant	Lead Free
VUE50-12NO1 IXYS RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Discrete Semiconductor Products

Diodes - Bridge Rectifiers definition: A Bridge Rectifier provides full-wave rectification from a two-wire AC input, resulting in lower cost and weight as compared to a rectifier ... Diodes - Bridge Rectifiers Product Listing: MB6M,GBPC2506,MSD100-12,D4SB80-7000,GBJ606.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Diodes - Bridge Rectifiers has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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