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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Diode Element Material Number of Terminals Avg. Forward Curr (Max) Forward Voltage-Max (VF) Ihs Manufacturer Manufacturer Manufacturer Part Number Mfr Mounting Number of Elements Operating Temp Range Operating Temperature Classification Package Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Peak Non-Repetitive Surge Current (Max) Peak Rep Rev Volt Phase Type Product Status Rad Hardened Reflow Temperature-Max (s) Rev Curr Risk Rank RMS Voltage (Max) Rohs Code Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Capacitance Subcategory Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Configuration Element Configuration Diode Type Current - Reverse Leakage @ Vr Power Dissipation Output Current Voltage - Forward (Vf) (Max) @ If Case Connection Forward Current Max Reverse Leakage Current Max Surge Current Output Current-Max Current - Average Rectified (Io) Forward Voltage Average Rectified Current Number of Phases Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Rep Pk Reverse Voltage-Max Peak Non-Repetitive Surge Current Non-rep Pk Forward Current-Max Max Forward Surge Current (Ifsm) Voltage - Peak Reverse (Max) Breakdown Voltage-Min Reverse Voltage (DC) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
IXYS VUO110-18NO7
Mfr. Тип
VUO110-18NO7
Anlielectronics Тип

IXYS
Diode Rectifier Bridge Single 1.8KV 125A 5-Pin PWS-E-1
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 16 Weeks - - Chassis Mount, Screw Chassis Mount PWS-E1 - 5 - - SILICON - - - - - - - - 1 - - - - - - - - - - - - - - - - - - -40°C~150°C TJ Bulk 2004 - - yes Active 1 (Unlimited) 5 - - - - - UL RECOGNIZED - - - - - UPPER UNSPECIFIED NOT SPECIFIED - - NOT SPECIFIED VUO110 5 - Not Qualified BRIDGE, 6 ELEMENTS - Three Phase 100μA @ 1800V - - 1.13V @ 50A ISOLATED - 300μA 1.2kA - 127A 1.9V - 3 - - - 1.3kA - - 1.8kV - - 30mm 94mm 54mm - - ROHS3 Compliant -
    VUO110-18NO7
    VUO110-18NO7

    IXYS
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Diodes Incorporated GBJ15005-F
    Mfr. Тип
    GBJ15005-F
    Anlielectronics Тип

    		Diodes Incorporated
    BRIDGE RECT 1PHASE 50V 15A GBJ
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 7 Weeks - - Through Hole Through Hole 4-SIP, GBJ - 4 - - SILICON - - - - - - - - 1 - - - - - - - - - - - - - - - - - - -65°C~150°C TJ Tube 2006 - e3 no Active 1 (Unlimited) 4 Through Hole EAR99 Matte Tin (Sn) - - UL RECOGNIZED - 60pF - 50V - - - - - 15A - GBJ15005 4 - - - Single Single Phase 10μA @ 50V - 15A 1.05V @ 7.5A ISOLATED 15A - 240A - - 1.05V - 1 10μA 50V - 240A - - - - 35V 24.5mm 30.3mm 4.8mm No No SVHC ROHS3 Compliant Exempt
      GBJ15005-F
      GBJ15005-F

      Diodes Incorporated
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      IXYS FBO16-12N
      Mfr. Тип
      FBO16-12N
      Anlielectronics Тип

      		IXYS
      Diode Rectifier Bridge Single 1.2KV 10A 5-Pin(5 Tab) ISOPLUS I4-PAC Tube
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 32 Weeks - - Through Hole Through Hole i4-Pac™-5 - 5 - - SILICON - - - - - - - - 1 - - - - - - - - - - - - - - - - - - -55°C~175°C TJ Tube 2002 - e1 yes Active 1 (Unlimited) 5 - - Tin/Silver/Copper (Sn/Ag/Cu) - - HIGH RELIABILITY - - - - - - - NOT SPECIFIED - - NOT SPECIFIED - 5 - Not Qualified BRIDGE, 4 ELEMENTS - Single Phase 10μA @ 1200V - - 1.43V @ 20A ISOLATED - 5μA 100A - - 1.43V 22A 1 5μA 1.2kV - 160A - - - - - 20.88mm 19.91mm 5.03mm - - ROHS3 Compliant Lead Free
        FBO16-12N
        FBO16-12N

        IXYS
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Diodes Incorporated GBPC1510
        Mfr. Тип
        GBPC1510
        Anlielectronics Тип

        		Diodes Incorporated
        BRIDGE RECT 1PHASE 1KV 15A GBPC
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - - - Screw QC Terminal 4-Square, GBPC - 4 - - SILICON - - - - - - - - 1 - - - - - - - - - - - - - - - - - - -65°C~150°C TJ Tray 2018 - e4 no Obsolete 1 (Unlimited) 4 - - Silver (Ag) - - UL RECOGNIZED, LOW POWER LOSS - 300pF - 1kV - UPPER SOLDER LUG 260 - 15A 40 GBPC1510 4 - - - Single Single Phase 5μA @ 1000V - 15A 1.1V @ 7.5A ISOLATED 15A 5μA 300A - - 1.1V - 1 5μA 1kV - 300A - 300A - - - 7.62mm 28.8mm 28.8mm No - ROHS3 Compliant Exempt
          GBPC1510
          GBPC1510

          Diodes Incorporated
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Diodes Incorporated GBJ602-F
          Mfr. Тип
          GBJ602-F
          Anlielectronics Тип

          		Diodes Incorporated
          BRIDGE RECT 1PHASE 200V 6A GBJ
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 9 Weeks - - Through Hole Through Hole 4-SIP, GBJ - 4 - - SILICON - - - - - - - - 1 - - - - - - - - - - - - - - - - - - -65°C~150°C TJ Tube 2012 - e3 no Active 1 (Unlimited) 4 Through Hole EAR99 Matte Tin (Sn) - - UL RECOGNIZED - 55pF - 200V - - - - - 6A - - 4 - - - Single Single Phase 5μA @ 200V - 6A 1V @ 3A ISOLATED 6A - 170A - - 1V - 1 5μA 200V - 170A - - - - 140V 24.5mm 30.3mm 4.8mm No No SVHC ROHS3 Compliant Exempt
            GBJ602-F
            GBJ602-F

            Diodes Incorporated
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            IXYS VUO192-16NO7
            Mfr. Тип
            VUO192-16NO7
            Anlielectronics Тип

            		IXYS
            Bridge Rectifiers Standard Rectifier Module BipolarBridge
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 3 Weeks - - Chassis Mount Chassis Mount Module - - - - SILICON - - - - - - - - 6 - - - - - - - - - - - - - - - - - - -40°C~150°C TJ Bulk 2010 - e3 yes Active 1 (Unlimited) 5 - - TIN OVER NICKEL - - LOW LEAKAGE CURRENT 8541.10.00.80 - - - - UPPER UNSPECIFIED NOT SPECIFIED - - NOT SPECIFIED - 5 R-XUFM-X5 Not Qualified BRIDGE, 6 ELEMENTS - Three Phase 200μA @ 1600V - - 1.07V @ 80A ISOLATED - - - 248A 240A - - 3 - - - - 3490A - 1.6kV - - - - - - - ROHS3 Compliant -
              VUO192-16NO7
              VUO192-16NO7

              IXYS
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor GBPC1210W
              Mfr. Тип
              GBPC1210W
              Anlielectronics Тип

              		ON Semiconductor
              RECT BRIDGE GPP 12A 1000V GBPC-W
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 12 Weeks ACTIVE (Last Updated: 1 week ago) - Through Hole Through Hole 4-Square, GBPC-W - 4 - 17.21g SILICON - - - - - - - - 1 - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Bulk - - - yes Active 1 (Unlimited) 4 - EAR99 - - - UL RECOGNIZED - 180pF - 1kV - UPPER WIRE - - 12A - GBPC1210 - - - - Single Single Phase 5μA @ 1000V 83.3W 12A 1.1V @ 6A ISOLATED - 5μA 300A - - 1.1V - 1 5μA 1kV - 300A - 300A - - - 11.23mm 29mm 29mm No - ROHS3 Compliant Lead Free
                GBPC1210W
                GBPC1210W

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                ON Semiconductor KBU4D
                Mfr. Тип
                KBU4D
                Anlielectronics Тип

                		ON Semiconductor
                BRIDGE RECT 1PHASE 200V 4A KBU
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - - Through Hole Through Hole 4-SIP, KBU - 4 - 9.00001g - - - - - - - - - 1 - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Bulk 2001 - - - Obsolete 1 (Unlimited) - Through Hole - - - - - - - - 200V 6.6W - - - - 4A - KBU4D - - - - - Single Phase 5μA @ 50V 6.6W 4A 1V @ 4A - 4A 5μA 200A - - 1V 4A - 5μA 200V - 200A - 200A - - - 19.3mm 23.7mm 7.1mm - No SVHC RoHS Compliant Lead Free
                  KBU4D
                  KBU4D

                  ON Semiconductor
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Micro Commercial Co GBU10M-BP
                  Mfr. Тип
                  GBU10M-BP
                  Anlielectronics Тип

                  		Micro Commercial Co
                  BRIDGE RECT 1PHASE 1KV 10A GBU
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 12 Weeks - - - Through Hole 4-SIP, GBU NO - - - SILICON - - - - - - - - 4 - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Tube 2008 - e3 yes Active 1 (Unlimited) 4 - EAR99 Matte Tin (Sn) - - UL RECOGNIZED 8541.10.00.80 - - - - - - NOT SPECIFIED not_compliant - NOT SPECIFIED GBU10 4 R-PSFM-T4 Not Qualified BRIDGE, 4 ELEMENTS - Single Phase 5μA @ 1000V - - 1.1V @ 5A - - - - 10A 10A - - 1 - - - - 200A - 1kV 1000V - - - - - - ROHS3 Compliant -
                    GBU10M-BP
                    GBU10M-BP

                    Micro Commercial Co
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    ON Semiconductor DFB2580
                    Mfr. Тип
                    DFB2580
                    Anlielectronics Тип

                    		ON Semiconductor
                    Bridge Rectifiers 800V 25A Glass Pass. Bridge Rectifier
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 11 Weeks ACTIVE (Last Updated: 1 day ago) - Through Hole Through Hole 4-SIP, TS-6P - 4 - 7g SILICON - - - - - - - - 1 - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Tube 2016 - e3 yes Active 1 (Unlimited) 4 - EAR99 Tin (Sn) - - UL RECOGNIZED - - - - - - - - - - - - - - - - Single Single Phase 10μA @ 800V - - 1.1V @ 25A ISOLATED 25A - 300A - - 1.1V - 1 10μA 800V - 350A - 350A - - - - - - No - ROHS3 Compliant -
                      DFB2580
                      DFB2580

                      ON Semiconductor
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      NTE Electronics, Inc NTE5301
                      Mfr. Тип
                      NTE5301
                      Anlielectronics Тип

                      		NTE Electronics, Inc
                      R-BRIDGE 600V 8 AMP SIP
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - - - - Through Hole 4-ESIP - - 4-SIP - - - - - - NTE Electronics NTE5301 NTE Electronics, Inc - - - - Bag - - - - - - - - Active - - - - - - -55°C ~ 150°C (TJ) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Single Phase 5 μA @ 600 V - - 1 V @ 8 A - - - - - 8 A - - - - - - - - - 600 V - - - - - - - - -
                        NTE5301
                        NTE5301

                        NTE Electronics, Inc
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Micro Commercial Co MB110S-TP
                        Mfr. Тип
                        MB110S-TP
                        Anlielectronics Тип

                        		Micro Commercial Co
                        BRIDGE RECT 1PHASE 100V 1A MBS-1
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 8 Weeks - - - Surface Mount TO-269AA, 4-BESOP YES - - - SILICON - - - - - - - - 4 - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2005 - e3 yes Obsolete 1 (Unlimited) 4 - EAR99 Matte Tin (Sn) - - - 8541.10.00.80 - - - - DUAL GULL WING NOT SPECIFIED not_compliant - NOT SPECIFIED MB110 4 R-PDSO-G4 Not Qualified BRIDGE, 4 ELEMENTS - Single Phase 500nA @ 100V - - 850mV @ 1A - - - - 1A 1A - - 1 - - - - 30A - 100V 100V - - - - - - ROHS3 Compliant -
                          MB110S-TP
                          MB110S-TP

                          Micro Commercial Co
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Diodes Incorporated DF15005S
                          Mfr. Тип
                          DF15005S
                          Anlielectronics Тип

                          		Diodes Incorporated
                          BRIDGE RECT 1PHASE 50V 1.5A DF-S
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 9 Weeks - - Surface Mount Surface Mount 4-SMD, Gull Wing - 4 - 299.00242mg SILICON - - - - - - - - 1 - - - - - - - - - - - - - - - - - - -65°C~150°C TJ Bulk 2012 - e3 no Active 1 (Unlimited) 4 SMD/SMT EAR99 Matte Tin (Sn) - - UL RECOGNIZED - - - - - DUAL - 260 - - 40 - 4 - - - Single Single Phase 10μA @ 50V - - 1.1V @ 1.5A - - - 50A - 1.5A 1.1V - 1 10μA 50V - 50A - - - - 35V 3.4mm 8.51mm 6.5mm No - ROHS3 Compliant -
                            DF15005S
                            DF15005S

                            Diodes Incorporated
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Comchip Technology KBPC5006-G
                            Mfr. Тип
                            KBPC5006-G
                            Anlielectronics Тип

                            		Comchip Technology
                            Bridge Rectifiers DIODE RECT BRIDGE 50A 600V
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 12 Weeks - - Surface Mount QC Terminal 4-Square, KBPC - - - - SILICON - - - - - - - - 4 - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Bulk 2008 - - - Active 1 (Unlimited) 4 - EAR99 - - - UL RECOGNIZED 8541.10.00.80 - - - - UPPER SOLDER LUG NOT SPECIFIED - - NOT SPECIFIED - - R-XUFM-D4 - BRIDGE, 4 ELEMENTS - Single Phase 10μA @ 600V - - 1.1V @ 25A ISOLATED - 10A 500A 50A 50A - - 1 - - - - - - 600V 600V - 10.77mm 28.3mm 28.3mm - - ROHS3 Compliant -
                              KBPC5006-G
                              KBPC5006-G

                              Comchip Technology
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              ON Semiconductor GBPC1201W
                              Mfr. Тип
                              GBPC1201W
                              Anlielectronics Тип

                              		ON Semiconductor
                              In a Pack of 2, ON Semiconductor GBPC1201W, Bridge Rectifier, 12A 100V, 4-Pin GBPC-W
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 12 Weeks ACTIVE (Last Updated: 1 week ago) Gold Through Hole Through Hole 4-Square, GBPC-W - 4 - 17.21g SILICON - - - - - - - - 1 - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Bulk 2013 - - yes Active 1 (Unlimited) 4 - EAR99 - - - UL RECOGNIZED - 180pF - 100V 83.3W UPPER WIRE - - 12A - GBPC1201 - - - - Single Single Phase 5μA @ 100V - 12A 1.1V @ 6A ISOLATED 12A - 300A - - 1.1V - 1 5μA 100V - 300A - 300A - - 70V 11.23mm 29mm 29mm No - ROHS3 Compliant Lead Free
                                GBPC1201W
                                GBPC1201W

                                ON Semiconductor
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                NTE Electronics, Inc NTE5327W
                                Mfr. Тип
                                NTE5327W
                                Anlielectronics Тип

                                		NTE Electronics, Inc
                                R-SI BRIDGE 800V 25A
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - - - Through Hole 4-Square NO - - - SILICON 4 25(A) 1.2 V NTE ELECTRONICS INC NTE Electronics NTE5327W NTE Electronics, Inc Through Hole 1 -55C to 125C Military Bag UNSPECIFIED S-XUFM-W4 SQUARE FLANGE MOUNT Active 300(A) 800(V) Single Phase Active No NOT SPECIFIED 10(mA) 2.09 560(V) Yes -55°C ~ 125°C (TJ) - - - - - - - - - - - - - - 8541.10.00.80 - Bridge Rectifier Diodes - - UPPER WIRE NOT SPECIFIED unknown - - - 4 S-XUFM-W4 Not Qualified BRIDGE, 4 ELEMENTS - Single Phase 10 μA @ 800 V - - 1.2 V @ 12.5 A ISOLATED - - - 25 A 25 A 1.2(V) - 1 - - 800 V - 300 A - 800 V 800 V - - - - - - - -
                                  NTE5327W
                                  NTE5327W

                                  NTE Electronics, Inc
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Diodes Incorporated GBJ2010-F
                                  Mfr. Тип
                                  GBJ2010-F
                                  Anlielectronics Тип

                                  		Diodes Incorporated
                                  BRIDGE RECT 1PHASE 1KV 20A GBJ
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 9 Weeks - - Through Hole Through Hole 4-SIP, GBJ - 4 - - SILICON - - - - - - - - 1 - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Tube 2006 - e3 no Active 1 (Unlimited) 4 Through Hole - Matte Tin (Sn) - - UL RECOGNIZED - 60pF - 1kV - - - - - 20A - GBJ2010 4 - - - Single Single Phase 10μA @ 1000V - 20A 1.05V @ 10A ISOLATED 20A - 240A - - 1.05V 20A 1 10μA 1kV - 240A - - - - 700V 24.5mm 30.3mm 4.8mm No No SVHC ROHS3 Compliant Lead Free
                                    GBJ2010-F
                                    GBJ2010-F

                                    Diodes Incorporated
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Diodes Incorporated GBJ25005-F
                                    Mfr. Тип
                                    GBJ25005-F
                                    Anlielectronics Тип

                                    		Diodes Incorporated
                                    RECT BRIDGE GPP 50V 25A GBJ
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - - - Through Hole Through Hole 4-SIP, GBJ - 4 - - SILICON - - - - - - - - 1 - - - - - - - - - - - - - - - - - - -65°C~150°C TJ Tube 2012 - e3 no Active 1 (Unlimited) 4 Through Hole EAR99 Matte Tin (Sn) - - UL RECOGNIZED - 85pF - 50V - - - - - 25A - - 4 - - - Single Single Phase 10μA @ 50V - 25A 1.05V @ 12.5A ISOLATED 25A - 350A - - 1.05V - 1 10μA 50V - 350A - - - - 35V 24.5mm 30.3mm 4.8mm No No SVHC ROHS3 Compliant Exempt
                                      GBJ25005-F
                                      GBJ25005-F

                                      Diodes Incorporated
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor GBPC3502W
                                      Mfr. Тип
                                      GBPC3502W
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      FAIRCHILD SEMICONDUCTOR GBPC3502W Bridge Rectifier Diode, Single, 200 V, 35 A, Module, 1.1 V, 4 Pins
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 12 Weeks ACTIVE (Last Updated: 1 day ago) - Through Hole Through Hole 4-Square, GBPC-W - 4 GBPC-W 17.21g - - - - - - - - - 1 - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Bulk 2013 - - - Active 1 (Unlimited) - - - - 150°C -55°C - - 180pF - 200V 83.3W - - - - 35A - GBPC3502 - - - - Single Single Phase 5μA @ 200V - 35A 1.1V @ 17.5A - 35A - 400A - 35A 1.1V 35A - 5μA 200V - 400A - 400A 200V - 140V 11.23mm 29mm 29mm No No SVHC ROHS3 Compliant Lead Free
                                        GBPC3502W
                                        GBPC3502W

                                        ON Semiconductor
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        LGE KBL406
                                        Mfr. Тип
                                        KBL406
                                        Anlielectronics Тип

                                        		LGE
                                        150A 10uA@600V 1.1V@4A 4A 600V -55℃~ 150℃@(Tj) KBL Bridge Rectifiers ROHS
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                                          KBL406
                                          KBL406

                                          LGE
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Diodes - Bridge Rectifiers definition: A Bridge Rectifier provides full-wave rectification from a two-wire AC input, resulting in lower cost and weight as compared to a rectifier ... Diodes - Bridge Rectifiers Product Listing: VUO110-18NO7,GBJ15005-F,FBO16-12N,GBPC1510,GBJ602-F.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Diodes - Bridge Rectifiers has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.