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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Brand | Collector Current (Ic) | Collector Cut-Off Current (Icbo) | Collector- Emitter Voltage VCEO Max | Collector-Emitter Breakdown Voltage (Vceo) | Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | DC Collector/Base Gain hfe Min | DC Current Gain (hFE@Ic,Vce) | DC Current Gain hFE Max | Emitter- Base Voltage VEBO | Factory Pack QuantityFactory Pack Quantity | Gain Bandwidth Product fT | Ihs Manufacturer | Manufacturer | Maximum Operating Temperature | Minimum Operating Temperature | Mounting Styles | Number of Elements | Operating Temperature-Max | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Pd - Power Dissipation | Power Dissipation (Pd) | RoHS | Rohs Code | Transistor Polarity | Transition Frequency (fT) | Transition Frequency-Nom (fT) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | Subcategory | Technology | Terminal Position | Terminal Form | Reach Compliance Code | JESD-30 Code | Qualification Status | Configuration | Transistor Application | Polarity/Channel Type | Product Type | Transistor Type | JEDEC-95 Code | Collector Base Voltage (VCBO) | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Continuous Collector Current | Collector-Emitter Voltage-Max | Highest Frequency Band | Collector-Base Capacitance-Max | Product Category |
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  | Mfr. Тип2N6327Anlielectronics Тип | Advanced |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2N6327 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHF75-28FAnlielectronics Тип | Advanced |
Bipolar Transistors - BJT NPN SILICON RF POWER TRANSISTOR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Advanced Semiconductor, Inc. | - | - | 35 V | - | - | 10 at 1 A, 5 V | - | 100 at 1 A, 5 V | 4 V | 10 | 30 MHz | - | Advanced Semiconductor, Inc. | + 200 C | - 65 C | SMD/SMT | - | - | - | - | - | - | - | - | 140 W | - | - | - | NPN | - | - | - | - | - | - | Transistors | Si | - | - | - | - | - | Single | - | - | BJTs - Bipolar Transistors | - | - | 60 V | - | - | - | 10 A | - | - | - | Bipolar Transistors - BJT | ||
| HF75-28F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипS8550LT1-2TYAnlielectronics Тип | FH (Guangdong Fenghua Advanced Tech) |
SOT-23 Bipolar (BJT) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| S8550LT1-2TY | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFHT1815G-MEAnlielectronics Тип | FH (Guangdong Fenghua Advanced Tech) |
SOT-23 Bipolar (BJT) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FHT1815G-ME | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипS8050LT1-J3YAnlielectronics Тип | FH (Guangdong Fenghua Advanced Tech) |
SOT-23 Bipolar (BJT) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| S8050LT1-J3Y | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFHT5401-MEAnlielectronics Тип | FH (Guangdong Fenghua Advanced Tech) |
150V 225mW 60@10mA,5V 600mA PNP SOT-23 Bipolar (BJT) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 600mA | 50nA | - | 150V | 200mV@10mA,1mA | - | 60@10mA,5V | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | 225mW | true | - | - | 100MHz | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | - | - | ||
| FHT5401-ME | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSD1496Anlielectronics Тип | Advanced Power Technology |
Description: RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, M142, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 6 | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | - | 1 | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PDFM-F6 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | EAR99 | - | HIGH RELIABILITY | - | - | DUAL | FLAT | unknown | R-PDFM-F6 | Not Qualified | SINGLE | AMPLIFIER | NPN | - | - | - | - | - | 9 A | 20 | - | 26 V | ULTRA HIGH FREQUENCY BAND | 70 pF | - | ||
| SD1496 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFHT9012Y-MEAnlielectronics Тип | FH (Guangdong Fenghua Advanced Tech) |
SOT-23 Bipolar (BJT) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FHT9012Y-ME | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFHT817-25-MEAnlielectronics Тип | FH (Guangdong Fenghua Advanced Tech) |
SOT-23 Bipolar (BJT) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FHT817-25-ME | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5109Anlielectronics Тип | Advanced Power Technology |
RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-39, M246, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | - | 1 | - | - | METAL | M246, 3 PIN | ROUND | CYLINDRICAL | Transferred | - | - | - | - | - | - | 1200 MHz | - | EAR99 | - | - | - | - | BOTTOM | WIRE | unknown | O-MBCY-W3 | Not Qualified | SINGLE | AMPLIFIER | NPN | - | - | TO-39 | - | - | 0.4 A | - | - | 20 V | ULTRA HIGH FREQUENCY BAND | - | - | ||
| 2N5109 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRF5812Anlielectronics Тип | Advanced Power Technology |
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, M240, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | - | 1 | - | - | PLASTIC/EPOXY | PLASTIC, M240, SO-8 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | 5000 MHz | - | EAR99 | - | LOW NOISE | - | - | DUAL | GULL WING | unknown | R-PDSO-G8 | Not Qualified | SINGLE | AMPLIFIER | NPN | - | - | - | - | - | 0.2 A | - | - | 15 V | ULTRA HIGH FREQUENCY BAND | 2 pF | - | ||
| MRF5812 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBFR90Anlielectronics Тип | Advanced Power Technology |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, M236, MACRO-T-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | - | 1 | - | - | PLASTIC/EPOXY | DISK BUTTON, O-PRDB-F3 | ROUND | DISK BUTTON | Transferred | - | - | - | - | - | - | 5000 MHz | - | EAR99 | - | LOW NOISE | - | - | RADIAL | FLAT | unknown | O-PRDB-F3 | Not Qualified | SINGLE | SWITCHING | NPN | - | - | - | - | 0.18 W | 0.03 A | 25 | - | 15 V | ULTRA HIGH FREQUENCY BAND | 1 pF | - | ||
| BFR90 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBR951MLT1Anlielectronics Тип | Advanced Power Technology |
Description: RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | - | - | - | - | - | - | - | - | - | - | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | No | - | - | 8000 MHz | e0 | EAR99 | TIN LEAD | LOW NOISE | - | - | DUAL | GULL WING | unknown | R-PDSO-G3 | Not Qualified | SINGLE | AMPLIFIER | NPN | - | - | - | - | 0.322 W | 0.1 A | 50 | - | 10 V | ULTRA HIGH FREQUENCY BAND | - | - | ||
| MMBR951MLT1 |
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