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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transition Frequency-Nom (fT) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Collector-Emitter Voltage-Max | Highest Frequency Band | Collector-Base Capacitance-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип2SB861CAnlielectronics Тип | HITACHI |
- Bulk (Alt: 2SB861C)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SB861C | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC5610Anlielectronics Тип | HITACHI |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SC5610 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SB955KAnlielectronics Тип | HITACHI |
- Bulk (Alt: 2SB955K)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SB955K | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SA673AKCTZAnlielectronics Тип | HITACHI |
- Bulk (Alt: 2SA673AKCTZ)
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SA673AKCTZ | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC4462Anlielectronics Тип | Hitachi Ltd |
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CMPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | HITACHI LTD | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | 1000 MHz | - | EAR99 | - | - | DUAL | GULL WING | unknown | 3 | R-PDSO-G3 | Not Qualified | SINGLE | - | SWITCHING | NPN | - | 0.1 W | 0.02 A | 30 | 25 V | ULTRA HIGH FREQUENCY BAND | 0.8 pF | ||
| 2SC4462 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC4259Anlielectronics Тип | Hitachi Ltd |
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | HITACHI LTD | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | 1000 MHz | - | EAR99 | - | - | DUAL | GULL WING | unknown | - | R-PDSO-G3 | Not Qualified | SINGLE | - | AMPLIFIER | NPN | - | - | 0.02 A | - | 25 V | ULTRA HIGH FREQUENCY BAND | 0.9 pF | ||
| 2SC4259 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SB1028Anlielectronics Тип | Hitachi Ltd |
Small Signal Bipolar Transistor, UPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | - | HITACHI LTD | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | EAR99 | - | - | SINGLE | FLAT | unknown | 3 | R-PSSO-F3 | Not Qualified | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SB1028 | |||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2SB1106Anlielectronics Тип | Hitachi Ltd |
Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | HITACHI LTD | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | COLLECTOR | AMPLIFIER | PNP | TO-220AB | 40 W | 6 A | 1000 | 120 V | - | - | ||
| 2SB1106 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC5629Anlielectronics Тип | Hitachi Ltd |
Description: RF Small Signal Bipolar Transistor, 0.05A I(C), NPN, SMPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | - | HITACHI LTD | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | 2000 MHz | - | EAR99 | - | - | DUAL | GULL WING | unknown | 3 | R-PDSO-G3 | Not Qualified | SINGLE | - | - | NPN | - | 0.08 W | 0.05 A | 80 | - | - | - | ||
| 2SC5629 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SB1518Anlielectronics Тип | Hitachi Ltd |
Description: Small Signal Bipolar Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | - | HITACHI LTD | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | EAR99 | - | - | SINGLE | FLAT | unknown | - | R-PSSO-F3 | Not Qualified | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SB1518 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC4529Anlielectronics Тип | Hitachi Ltd |
RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Very High Frequency Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | HITACHI LTD | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | 2200 MHz | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE | ISOLATED | AMPLIFIER | NPN | - | - | 0.3 A | - | 20 V | VERY HIGH FREQUENCY BAND | - | ||
| 2SC4529 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SD1777Anlielectronics Тип | Hitachi Ltd |
Description: Small Signal Bipolar Transistor, NPN, Silicon
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON | HITACHI LTD | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Transferred | - | No | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | DUAL | GULL WING | unknown | - | R-PDSO-G4 | Not Qualified | - | - | - | NPN | - | - | - | - | - | - | - | ||
| 2SD1777 | |||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2SA1810Anlielectronics Тип | Hitachi Ltd |
Power Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126MOD, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | HITACHI LTD | 1 | 150 °C | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Transferred | SIP | - | 300 MHz | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSIP-T3 | Not Qualified | SINGLE | - | AMPLIFIER | PNP | - | 10 W | 0.2 A | 60 | 200 V | - | - | ||
| 2SA1810 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SB1001Anlielectronics Тип | Hitachi Ltd |
Small Signal Bipolar Transistor, 2A I(C), PNP, UPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | - | HITACHI LTD | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | No | 80 MHz | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | SINGLE | FLAT | unknown | 3 | R-PSSO-F3 | Not Qualified | SINGLE | - | - | PNP | - | 1 W | 2 A | 100 | - | - | - | ||
| 2SB1001 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC4994Anlielectronics Тип | Hitachi Ltd |
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CMPAK-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON | HITACHI LTD | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | 10500 MHz | - | EAR99 | - | LOW NOISE | DUAL | GULL WING | unknown | 4 | R-PDSO-G4 | Not Qualified | SINGLE | COLLECTOR | AMPLIFIER | NPN | - | 0.1 W | 0.02 A | 50 | 8 V | ULTRA HIGH FREQUENCY BAND | 0.75 pF | ||
| 2SC4994 | |||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2SB1661SAnlielectronics Тип | Hitachi Ltd |
Power Bipolar Transistor, 0.15A I(C), PNP, Plastic/Epoxy, 2 Pin, SC-64, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | - | HITACHI LTD | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | SC-64 | - | - | - | EAR99 | - | - | SINGLE | GULL WING | unknown | 3 | R-PSSO-G2 | Not Qualified | SINGLE | - | - | PNP | - | 10 W | 0.15 A | 50 | - | - | - | ||
| 2SB1661S | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC5136Anlielectronics Тип | Hitachi Ltd |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SMPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | HITACHI LTD | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | 3800 MHz | - | EAR99 | - | LOW NOISE | DUAL | GULL WING | unknown | 3 | R-PDSO-G3 | Not Qualified | SINGLE | COLLECTOR | AMPLIFIER | NPN | - | 0.08 W | 0.05 A | 50 | 13 V | ULTRA HIGH FREQUENCY BAND | 1.3 pF | ||
| 2SC5136 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC2618RCAnlielectronics Тип | Hitachi Ltd |
Small Signal Bipolar Transistor, 0.5A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | HITACHI LTD | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | EAR99 | - | - | DUAL | GULL WING | unknown | - | R-PDSO-G3 | Not Qualified | SINGLE | - | AMPLIFIER | NPN | - | - | 0.5 A | 60 | 35 V | - | - | ||
| 2SC2618RC | |||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2SD2110Anlielectronics Тип | Hitachi Ltd |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220FM, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | HITACHI LTD | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220FM | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | ISOLATED | AMPLIFIER | NPN | - | 25 W | 4 A | 1000 | 80 V | - | - | ||
| 2SD2110 | |||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC2816Anlielectronics Тип | Hitachi Ltd |
Description: Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | HITACHI LTD | 1 | 140 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | No | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE | COLLECTOR | SWITCHING | NPN | TO-220AB | 40 W | 5 A | 7 | 400 V | - | - | ||
| 2SC2816 |
Индекс :
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