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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mount | Mounting Type | Number of Pins | Material | Automotive | Category | Channel Mode | Continuous Drain Current | Drain-Source On-Volt | ECCN (US) | EU RoHS | Gate-Source Voltage (Max) | HTS | Ihs Manufacturer | Lead Shape | Manufacturer | Manufacturer Part Number | Maximum Continuous Drain Current (A) | Maximum Drain Source Resistance (mOhm) | Maximum Drain Source Resistance (MOhm) | Maximum Drain Source Voltage (V) | Maximum Gate Source Leakage Current (nA) | Maximum Gate Source Voltage (V) | Maximum Gate Threshold Voltage (V) | Maximum IDSS (uA) | Maximum Operating Temperature | Maximum Operating Temperature (°C) | Maximum Power Dissipation (mW) | Minimum Operating Temperature | Minimum Operating Temperature (°C) | Mounting | Number of Elements | Number of Elements per Chip | Operating Temp Range | Operating Temperature Classification | Package Description | Package Height | Package Length | Package Type | Package Width | Part Life Cycle Code | PCB changed | PPAP | Process Technology | Rad Hardened | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Schedule B | Standard Package Name | Supplier Package | Tab | Turn Off Delay Time | Typical Fall Time (ns) | Typical Gate Charge @ 10V (nC) | Typical Gate Charge @ Vgs (nC) | Typical Input Capacitance @ Vds (pF) | Typical Rise Time (ns) | Typical Turn-Off Delay Time (ns) | Typical Turn-On Delay Time (ns) | Packaging | Part Status | Type | Max Operating Temperature | Min Operating Temperature | Max Power Dissipation | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | Polarity | Configuration | Element Configuration | Power Dissipation | Turn On Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Input Capacitance | Channel Type | Drain to Source Resistance | Height | Length | Width | Radiation Hardening |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипMMHS70R1K6QURHAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | - | - | - | - | - | - | - | 5.4 | - | 1600@10V | 700 | - | ±30 | - | - | - | 150 | 5400 | - | -55 | Surface Mount | - | 1 | - | - | - | 1.7(Max) | 6.7(Max) | - | 3.7(Max) | - | 2 | Unknown | - | - | - | - | - | - | - | - | SOT-223 | Tab | - | 24 | 6.1 | 6.1@10V | 225@25V | 25 | 30 | 11 | - | Active | - | - | - | - | - | - | 3 | - | Single | - | - | - | - | - | - | N | - | - | - | - | - | ||
| MMHS70R1K6QURH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDF1933THAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Si | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | - | - | Through Hole | - | - | 43 | 7.5@10V | - | 80 | 100 | ±20 | 4 | 1 | - | 150 | 27700 | - | -55 | Through Hole | - | 1 | - | - | - | 16.13(Max) | 10.71(Max) | - | 4.93(Max) | - | 3 | Unknown | TMOS | - | - | - | - | - | - | TO-220 | TO-220F | Tab | - | 15.1 | 59.4 | 59.4@10V | 3841@40V | 32.7 | 24.2 | 15.6 | Tube | Unconfirmed | - | - | - | - | - | - | 3 | - | Single | - | - | - | - | - | - | N | - | - | - | - | - | ||
| MDF1933TH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMMD60R580PBRHAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Unknown | Power MOSFET | Enhancement | 8(A) | 600(V) | EAR99 | Compliant with Exemption | ±30(V) | 8541.29.00.95 | MAGNACHIP SEMICONDUCTOR LTD | - | MagnaChip Semiconductor Ltd | MMD60R580PBRH | 8 | - | 580@10V | 600 | - | ±30 | - | - | - | 150 | 70000 | - | -55 | Surface Mount | 1 | 1 | -55C to 150C | Military | , | 2.39(Max) | 6.73(Max) | DPAK | 6.1 | Active | 2 | Unknown | - | No | - | 1.5 | Non-Compliant | - | 8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080 | - | DPAK | Tab | - | 25 | 18 | 18@10V | 575@25V | 34 | 48 | 14 | Tape and Reel | Active | Power MOSFET | - | - | - | - | unknown | 3 | N | Single | - | 70(W) | - | - | - | - | N | - | - | - | - | - | ||
| MMD60R580PBRH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDIS1501THAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | 8541.29.00.95 | MAGNACHIP SEMICONDUCTOR LTD | Through Hole | MagnaChip Semiconductor Ltd | MDIS1501TH | 25.1 | - | 5.6@10V | 30 | 100 | ±20 | 2.7 | 1 | - | 150 | 6200 | - | -55 | Through Hole | - | 1 | - | - | , | 6.22(Max) | 6.73(Max) | - | 2.39(Max) | Active | 3 | Unknown | TMOS | - | NOT SPECIFIED | 5.73 | - | Yes | - | TO-251 | IPAK | Tab | - | 8.6 | 20.7 | 20.7@10V|[email protected] | 1350@15V | 12.2 | 29.5 | 8.8 | Tube | Active | - | - | - | - | NOT SPECIFIED | unknown | 3 | - | Single | - | - | - | - | - | - | N | - | - | - | - | - | ||
| MDIS1501TH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDD1502RHAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | 8541.29.00.95 | MAGNACHIP SEMICONDUCTOR LTD | Gull-wing | MagnaChip Semiconductor Ltd | MDD1502RH | 20.4 | - | 8.5@10V | 30 | 100 | ±20 | 2.7 | 1 | - | 150 | 6200 | - | -55 | Surface Mount | - | 1 | - | - | - | 2.39(Max) | 6.73(Max) | - | 6.1 | Active | 2 | Unknown | TMOS | - | NOT SPECIFIED | 5.73 | - | Yes | - | TO-252 | DPAK | Tab | - | 8.1 | 14.3 | 14.3@10V|[email protected] | 928@15V | 12 | 22.8 | 7.2 | Tape and Reel | Active | - | - | - | - | NOT SPECIFIED | unknown | 3 | - | Single | - | - | - | - | - | - | N | - | - | - | - | - | ||
| MDD1502RH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMMIS70R1K4PTHAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | - | - | - | - | Through Hole | - | - | 3.2 | 1400@10V | - | 700 | 100 | ±30 | 4 | 1 | - | 150 | 33000 | - | -55 | Through Hole | - | 1 | - | - | - | 6.22(Max) | 6.73(Max) | - | 2.39(Max) | - | 3 | Unknown | Super Junction | - | - | - | - | - | - | TO-251 | IPAK | Tab | - | 21 | 11 | 11@10V | 312@25V | 20 | 33 | 9 | Tube | Active | - | - | - | - | - | - | 3 | - | Single | - | - | - | - | - | - | N | - | - | - | - | - | ||
| MMIS70R1K4PTH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDF7N60BTHAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | - | - | Through Hole | - | - | 7 | - | 1150@10V | 600 | 100 | ±30 | 4 | 1 | - | 150 | 42000 | - | -55 | Through Hole | - | 1 | - | - | - | 16.13(Max) | 10.71(Max) | - | 4.93(Max) | - | 3 | Unknown | - | - | - | - | - | - | - | TO-220 | TO-220F | Tab | - | 33 | 20.1 | 20.1@10V | 800@25V | 27 | 64 | 17 | Tube | Unconfirmed | - | - | - | - | - | - | 3 | - | Single | - | - | - | - | - | - | N | - | - | - | - | - | ||
| MDF7N60BTH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDF3N50THAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | Through Hole | 3 | - | Unknown | - | Enhancement | - | - | EAR99 | Supplier Unconfirmed | - | - | - | - | - | - | - | - | 2500@10V | 500 | - | - | 5 | - | +150 °C | - | - | -55 °C | - | Through Hole | - | 1 | - | - | - | 16.13(Max) | 10.71(Max) | TO-220F | 4.93(Max) | - | 3 | Unknown | - | - | - | - | Compliant | - | - | TO-220 | TO-220F | Tab | 14.6 ns | - | - | 6.8 | - | - | - | - | - | Unconfirmed | - | 150 °C | -55 °C | 30.5 W | - | - | 3 | - | Single | Single | - | 9 ns | 2.8 A | 30 V | 285 pF | N | 2.5 Ω | 16.13 mm | 10.71 mm | 4.93 mm | No | ||
| MDF3N50TH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMML60R190PTHAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | - | 3 | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | - | - | Through Hole | - | - | 20 | - | 190@10V | 600 | 100 | ±30 | 4 | 1 | - | 150 | 154000 | - | -55 | Through Hole | - | 1 | - | - | - | 9.65(Max) | 10.29(Max) | - | 4.83(Max) | - | 3 | Unknown | Super Junction | - | - | - | Non-Compliant | - | - | I2PAK | TO-262 | Tab | 146 ns | 47 | 51 | 51@10V | 1630@25V | 73 | 146 | 32 | Tube | Unconfirmed | - | 150 °C | -55 °C | 154 W | - | - | 3 | - | Single | Single | - | 32 ns | 20 A | 30 V | 1.63 nF | N | 190 mΩ | 11.05 mm | 10.29 mm | 4.63 mm | - | ||
| MML60R190PTH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDP1901THAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | - | 3 | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | 8541.29.00.95 | - | - | - | - | 36 | - | 22@10V | 100 | 100 | ±20 | 4 | 1 | - | 150 | 34000 | - | -55 | Through Hole | 1 | 1 | - | - | - | 9.65(Max) | 10.67(Max) | - | 4.83(Max) | - | 3 | Unknown | TMOS | - | - | - | Compliant | - | - | TO-220 | TO-220 | Tab | - | 20 | 75 | 75@10V | 3045@30V | 12 | 70 | 25 | Tube | Active | - | 150 °C | -55 °C | - | - | - | 3 | - | Single | - | 34 W | - | 36 A | 20 V | - | N | - | - | - | - | No | ||
| MDP1901TH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDQ16N50GTPAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | - | 3 | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | 8541.29.00.95 | - | Through Hole | - | - | 16.5 | - | 350@10V | 500 | 100 | ±30 | 5 | 1 | - | 150 | 215000 | - | -55 | Through Hole | 1 | 1 | - | - | - | 21.46(Max) | 16.26(Max) | - | 5.31(Max) | - | 3 | Unknown | - | - | - | - | Compliant | - | - | TO-247 | TO-247 | Tab | - | 41 | 34.9 | 34.9@10V | 1724@25V | 88.5 | 96.5 | 46 | Tube | Unconfirmed | - | 150 °C | -55 °C | - | - | - | 3 | - | Single | - | 215 W | - | 16.5 A | 30 V | - | N | - | - | - | - | No | ||
| MDQ16N50GTP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDQ23N50DTPAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | - | 3 | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | 8541.29.00.95 | - | Through Hole | - | - | 23 | - | 245@10V | 500 | 100 | ±30 | 4 | 1 | - | 150 | 290000 | - | -55 | Through Hole | 1 | 1 | - | - | - | 21.46(Max) | 16.26(Max) | - | 5.31(Max) | - | 3 | Unknown | - | - | - | - | Compliant | - | - | TO-247 | TO-247 | Tab | - | 195 | 76 | 76@10V | 3280@25V | 155 | 230 | 50 | Tube | Active | - | 150 °C | -55 °C | - | - | - | 3 | - | Single | - | 290 W | - | 23 A | 30 V | - | N | - | - | - | - | No | ||
| MDQ23N50DTP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMMD70R900PRHAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | 8541.29.00.95 | MAGNACHIP SEMICONDUCTOR LTD | Gull-wing | MagnaChip Semiconductor Ltd | MMD70R900PRH | 5 | - | 900@10V | 700 | 100 | ±30 | 4 | 1 | - | 150 | 40000 | - | -55 | Surface Mount | - | 1 | - | - | , | 2.39(Max) | 6.73(Max) | - | 6.1 | Active | 2 | Unknown | Super Junction | - | - | 5.72 | Non-Compliant | - | - | TO-252 | DPAK | Tab | - | 21 | 15 | 15@10V | 430@25V | 25 | 37 | 11 | Tape and Reel | Active | - | - | - | - | - | unknown | 3 | - | Single | - | - | - | - | - | - | N | - | - | - | - | - | ||
| MMD70R900PRH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDP1923THAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | - | 3 | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | 8541.29.00.95 | MAGNACHIP SEMICONDUCTOR LTD | - | MagnaChip Semiconductor Ltd | MDP1923TH | 69 | - | 13.9@10V | 100 | 100 | ±20 | 4 | 1 | - | 150 | 139000 | - | -55 | Through Hole | - | 1 | - | - | , | 9.65(Max) | 10.67(Max) | - | 4.83(Max) | Active | 3 | Unknown | TMOS | - | NOT SPECIFIED | 5.74 | Non-Compliant | Yes | - | TO-220 | TO-220 | Tab | 32.5 ns | 11.9 | 42.8 | 42.8@10V | 2802@40V | 10.1 | 32.5 | 10.6 | Tube | - | - | 150 °C | -55 °C | 139 W | NOT SPECIFIED | unknown | 3 | - | Single | Single | - | 10.6 ns | 69 A | 20 V | 2.802 nF | N | 13.9 mΩ | 16.51 mm | 10.67 mm | 4.83 mm | - | ||
| MDP1923TH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMMFT60R380PTHAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant with Exemption | - | 8541.29.00.95 | MAGNACHIP SEMICONDUCTOR LTD | Through Hole | MagnaChip Semiconductor Ltd | MMFT60R380PTH | 11 | - | 380@10V | 600 | 100 | ±30 | 4 | 1 | - | 150 | 31000 | - | -55 | Through Hole | - | 1 | - | - | , | 15.3(Max) | 10.3(Max) | - | 4.7(Max) | Active | 3 | Unknown | Super Junction | - | - | 5.7 | Non-Compliant | - | - | TO-220F | TO-220FT | Tab | - | 30 | 28 | 28@10V | 890@25V | 40 | 80 | 18 | Tube | Unconfirmed | - | - | - | - | - | unknown | 3 | - | Single | - | - | - | - | - | - | N | - | - | - | - | - | ||
| MMFT60R380PTH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDP1723THAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | 8541.29.00.95 | - | - | - | - | 191 | - | 2.3@10V | 40 | 100 | ±20 | 4 | 1 | - | 150 | 138900 | - | -55 | Through Hole | - | 1 | - | - | - | 9.65(Max) | 10.67(Max) | - | 4.83(Max) | - | 3 | Unknown | TMOS | - | - | - | - | - | - | TO-220 | TO-220 | Tab | - | 42.7 | 88.3 | 88.3@10V | 5755@20V | 14.7 | 84.8 | 24.3 | Tube | - | - | - | - | - | - | - | 3 | - | Single | - | - | - | - | - | - | N | - | - | - | - | - | ||
| MDP1723TH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDF9N60THAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | 8541.29.00.95 | MAGNACHIP SEMICONDUCTOR LTD | Through Hole | MagnaChip Semiconductor Ltd | MDF9N60TH | 9 | - | 750@10V | 600 | 100 | ±30 | 5 | 1 | - | 150 | 48000 | - | -55 | Through Hole | - | 1 | - | - | , | 16.13(Max) | 10.71(Max) | - | 4.93(Max) | Active | 3 | Unknown | - | - | NOT SPECIFIED | 5.69 | - | Yes | - | TO-220 | TO-220F | Tab | - | 30 | 27 | 27@10V | 1160@25V | 59 | 48 | 31 | Tube | Unconfirmed | - | - | - | - | NOT SPECIFIED | unknown | 3 | - | Single | - | - | - | - | - | - | N | - | - | - | - | - | ||
| MDF9N60TH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDF10N65BTHAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | 8541.29.00.95 | MAGNACHIP SEMICONDUCTOR LTD | Through Hole | MagnaChip Semiconductor Ltd | MDF10N65BTH | 10 | - | 1000@10V | 650 | 100 | ±30 | 4 | 1 | - | 150 | 47700 | - | -55 | Through Hole | - | 1 | - | - | , | 16.13(Max) | 10.71(Max) | - | 4.93(Max) | Active | 3 | Unknown | - | - | NOT SPECIFIED | 5.74 | - | Yes | - | TO-220 | TO-220F | Tab | - | 49 | 29.3 | 29.3@10V | 1202@25V | 48 | 96.5 | 19.4 | Tube | Active | - | - | - | - | NOT SPECIFIED | unknown | 3 | - | Single | - | - | - | - | - | - | N | - | - | - | - | - | ||
| MDF10N65BTH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDF4N65BTHAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | - | MAGNACHIP SEMICONDUCTOR LTD | Through Hole | MagnaChip Semiconductor Ltd | MDF4N65BTH | 4 | - | 2200@10V | 650 | 100 | ±30 | 4 | 1 | - | 150 | 35000 | - | -55 | Through Hole | - | 1 | - | - | - | 16.13(Max) | 10.71(Max) | - | 4.93(Max) | Active | 3 | Unknown | - | - | NOT SPECIFIED | 5.74 | - | Yes | - | TO-220 | TO-220F | Tab | - | 25 | 11.6 | 11.6@10V | 518@25V | 22 | 41 | 13 | Tube | Active | - | - | - | - | NOT SPECIFIED | unknown | 3 | - | Single | - | - | - | - | - | - | N | - | - | - | - | - | ||
| MDF4N65BTH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMDQ18N50GTPAnlielectronics Тип | MagnaChip |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Unknown | Power MOSFET | Enhancement | - | - | EAR99 | Compliant | - | 8541.29.00.95 | - | Through Hole | - | - | 20 | - | 270@10V | 500 | 100 | ±30 | 5 | 1 | - | 150 | 245000 | - | -55 | Through Hole | - | 1 | - | - | - | 21.46(Max) | 16.26(Max) | - | 5.31(Max) | - | 3 | Unknown | - | - | - | - | - | - | - | TO-247 | TO-247 | Tab | - | 45 | 48 | 48@10V | 2430@25V | 80 | 174 | 87 | Tube | Unconfirmed | - | - | - | - | - | - | 3 | - | Single | - | - | - | - | - | - | N | - | - | - | - | - | ||
| MDQ18N50GTP |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ
