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Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Mount Surface Mount Number of Pins Number of Terminals Transistor Element Material Drain Current-Max (ID) Ihs Manufacturer Manufacturer Manufacturer Part Number Number of Elements Operating Temperature-Max Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Part Package Code Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Turn Off Delay Time Turn-off Time-Max (toff) Turn-on Time-Max (ton) ECCN Code Resistance Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Subcategory Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Pin Count JESD-30 Code Qualification Status Configuration Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Transistor Application Drain to Source Voltage (Vdss) Forward Voltage Polarity/Channel Type JEDEC-95 Code Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Power Dissipation-Max (Abs) Drain to Source Resistance Power Dissipation Ambient-Max Height Length Width
Fuji Electric 2SK3681-01
Mfr. Тип
2SK3681-01
Anlielectronics Тип

Fuji Electric
Power Field-Effect Transistor, 43A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - NO - 3 SILICON 43 A FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK3681-01 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active TO-247 - 5.71 - - - - - - - - - - 8541.29.00.95 - SINGLE THROUGH-HOLE - unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - - - SWITCHING - - N-CHANNEL TO-247 - - 0.16 Ω - 172 A 600 V - METAL-OXIDE SEMICONDUCTOR - - - - - -
    2SK3681-01
    2SK3681-01

    Fuji Electric
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Fuji Electric 2SK3594-01
    Mfr. Тип
    2SK3594-01
    Anlielectronics Тип

    		Fuji Electric
    Power Field-Effect Transistor, 45A I(D), 200V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - NO - 3 SILICON 45 A FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK3594-01 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active TO-220AB - 5.75 - - - - - EAR99 - - - - 8541.29.00.95 FET General Purpose Power SINGLE THROUGH-HOLE - unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - - - SWITCHING - - N-CHANNEL TO-220AB - 30 A 0.066 Ω - 180 A 200 V 258.9 mJ METAL-OXIDE SEMICONDUCTOR 135 W - - - - -
      2SK3594-01
      2SK3594-01

      Fuji Electric
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Fuji Electric 2SK2690-01
      Mfr. Тип
      2SK2690-01
      Anlielectronics Тип

      		Fuji Electric
      Power Field-Effect Transistor, 80A I(D), 60V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-228AA, SC-65, TO-3P, 3 PIN
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - NO - 3 SILICON 80 A FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK2690-01 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-228AA - 5.79 - - - - - EAR99 - - - - - FET General Purpose Power SINGLE THROUGH-HOLE - unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - - - SWITCHING - - N-CHANNEL TO-228AA - 80 A 0.017 Ω - 320 A 60 V - METAL-OXIDE SEMICONDUCTOR 125 W - - - - -
        2SK2690-01
        2SK2690-01

        Fuji Electric
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Fuji Electric 2SK3772-01
        Mfr. Тип
        2SK3772-01
        Anlielectronics Тип

        		Fuji Electric
        Power Field-Effect Transistor, 32A I(D), 300V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - NO - 3 SILICON 32 A FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK3772-01 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active TO-220AB - 5.75 - - - - - EAR99 - - - - 8541.29.00.95 - SINGLE THROUGH-HOLE - unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - - - SWITCHING - - N-CHANNEL TO-220AB - 32 A 0.13 Ω - 128 A 300 V 597.4 mJ METAL-OXIDE SEMICONDUCTOR 270 W - - - - -
          2SK3772-01
          2SK3772-01

          Fuji Electric
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Fuji Electric 2SK3532-01MR
          Mfr. Тип
          2SK3532-01MR
          Anlielectronics Тип

          		Fuji Electric
          Power Field-Effect Transistor, 6A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
            2SK3532-01MR
            2SK3532-01MR

            Fuji Electric
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Fuji 2SK899
            Mfr. Тип
            2SK899
            Anlielectronics Тип

            		Fuji
            Power Field-Effect Transistor, 18A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, 3 PIN
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
              2SK899
              2SK899

              Fuji
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Fuji 2SK3699-01MR
              Mfr. Тип
              2SK3699-01MR
              Anlielectronics Тип

              		Fuji
              Power Field-Effect Transistor, 3.7A I(D), 900V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - NO - 3 SILICON 3.7 A FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK3699-01MR 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active TO-220AB - 5.72 - - - - - - - - - - 8541.29.00.95 - SINGLE THROUGH-HOLE - unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - ISOLATED - SWITCHING - - N-CHANNEL TO-220AB - - 4.3 Ω - 14.8 A 900 V 171.1 mJ METAL-OXIDE SEMICONDUCTOR - - - - - -
                2SK3699-01MR
                2SK3699-01MR

                Fuji
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Fuji 2SK3697-01
                Mfr. Тип
                2SK3697-01
                Anlielectronics Тип

                		Fuji
                Power Field-Effect Transistor, 42A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - NO - 3 SILICON 42 A FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK3697-01 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active TO-247AD - 5.73 - - - - - - - - - - 8541.29.00.95 - SINGLE THROUGH-HOLE - unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - - - SWITCHING - - N-CHANNEL TO-247AD - - 0.17 Ω - 168 A 600 V 828 mJ METAL-OXIDE SEMICONDUCTOR - - - - - -
                  2SK3697-01
                  2SK3697-01

                  Fuji
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Fuji Electric 2SK3675-01
                  Mfr. Тип
                  2SK3675-01
                  Anlielectronics Тип

                  		Fuji Electric
                  Power Field-Effect Transistor, 7A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - NO - 3 SILICON 7 A FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK3675-01 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-247 - 5.8 - - - - - - - - - - 8541.29.00.95 - SINGLE THROUGH-HOLE - unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - - - SWITCHING - - N-CHANNEL TO-247 - - 2 Ω - 28 A 900 V 269.5 mJ METAL-OXIDE SEMICONDUCTOR - - - - - -
                    2SK3675-01
                    2SK3675-01

                    Fuji Electric
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Fuji 2SK947-MR
                    Mfr. Тип
                    2SK947-MR
                    Anlielectronics Тип

                    		Fuji
                    Power Field-Effect Transistor, 12A I(D), 250V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F15, SC-67, 3 PIN
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - NO - 3 SILICON 12 A COLLMER SEMICONDUCTOR INC Fuji Electric Co Ltd 2SK947MR 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-220F15 - 8.35 - - - 390 ns 120 ns EAR99 - - - - - FET General Purpose Power SINGLE THROUGH-HOLE - unknown 3 R-PSFM-T3 Not Qualified SINGLE - ENHANCEMENT MODE - ISOLATED - SWITCHING - - N-CHANNEL TO-220AB - 12 A 0.3 Ω - 48 A 250 V - METAL-OXIDE SEMICONDUCTOR 40 W - 40 W - - -
                      2SK947-MR
                      2SK947-MR

                      Fuji
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Fuji Electric 2SK2526-01
                      Mfr. Тип
                      2SK2526-01
                      Anlielectronics Тип

                      		Fuji Electric
                      Power Field-Effect Transistor, 5A I(D), 900V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - NO - 3 SILICON 5 A FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK2526-01 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-220AB - 5.83 - - - - - - - - - AVALANCHE RATED - FET General Purpose Power SINGLE THROUGH-HOLE - unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - - - SWITCHING - - N-CHANNEL TO-220AB - 5 A 3.6 Ω - 20 A 900 V - METAL-OXIDE SEMICONDUCTOR 60 W - - - - -
                        2SK2526-01
                        2SK2526-01

                        Fuji Electric
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Fuji 2SK3871-01MR
                        Mfr. Тип
                        2SK3871-01MR
                        Anlielectronics Тип

                        		Fuji
                        Power Field-Effect Transistor, 40A I(D), 230V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - NO - 3 SILICON 40 A FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK3871-01MR 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-220AB - 5.84 - - - - - EAR99 - - - - 8541.29.00.95 - SINGLE THROUGH-HOLE - unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - ISOLATED - SWITCHING - - N-CHANNEL TO-220AB - - 0.076 Ω - 160 A 230 V 633.1 mJ METAL-OXIDE SEMICONDUCTOR - - - - - -
                          2SK3871-01MR
                          2SK3871-01MR

                          Fuji
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Fuji Electric 2SK3524-01
                          Mfr. Тип
                          2SK3524-01
                          Anlielectronics Тип

                          		Fuji Electric
                          Power Field-Effect Transistor, 8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - - - - - FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK3524-01 - - - FLANGE MOUNT, R-PSFM-T3 - - Active TO-220AB - 5.76 - - - - - - - - - - 8541.29.00.95 - - - - unknown 3 - - - - - - - - - - - - - - - - - - - - - - - - - - -
                            2SK3524-01
                            2SK3524-01

                            Fuji Electric
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Fuji Electric 2SK3690-01
                            Mfr. Тип
                            2SK3690-01
                            Anlielectronics Тип

                            		Fuji Electric
                            Power Field-Effect Transistor, 4.5A I(D), 600V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - NO - 3 SILICON 4.5 A FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK3690-01 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-220AB - 5.84 - - - - - - - - - - 8541.29.00.95 - SINGLE THROUGH-HOLE - unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - - - SWITCHING - - N-CHANNEL TO-220AB - - 2.3 Ω - 18 A 600 V 261.1 mJ METAL-OXIDE SEMICONDUCTOR - - - - - -
                              2SK3690-01
                              2SK3690-01

                              Fuji Electric
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Fuji Electric 2SK3270-01
                              Mfr. Тип
                              2SK3270-01
                              Anlielectronics Тип

                              		Fuji Electric
                              Power Field-Effect Transistor, 80A I(D), 60V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - NO - 3 SILICON 80 A FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK3270-01 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active TO-220AB - 5.71 - - - - - EAR99 - - - AVALANCHE ENERGY RATED - - SINGLE THROUGH-HOLE - unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - - - SWITCHING - - N-CHANNEL TO-220AB - - 0.0065 Ω - 320 A 60 V 484.3 mJ METAL-OXIDE SEMICONDUCTOR - - - - - -
                                2SK3270-01
                                2SK3270-01

                                Fuji Electric
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Fuji FMW47N60S1HF
                                Mfr. Тип
                                FMW47N60S1HF
                                Anlielectronics Тип

                                		Fuji
                                Power Field-Effect Transistor,
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - NO - 3 SILICON 47 A FUJI ELECTRIC CO LTD Fuji Electric Co Ltd FMW47N60S1HF 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active - NOT SPECIFIED 5.67 - Yes - - - EAR99 - - - - - - SINGLE THROUGH-HOLE NOT SPECIFIED unknown - R-PSFM-T3 - SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - - - SWITCHING - - N-CHANNEL TO-247 - - 0.07 Ω - 141 A 600 V 1267.4 mJ METAL-OXIDE SEMICONDUCTOR - - - - - -
                                  FMW47N60S1HF
                                  FMW47N60S1HF

                                  Fuji
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Fuji Electric 2SK902
                                  Mfr. Тип
                                  2SK902
                                  Anlielectronics Тип

                                  		Fuji Electric
                                  Power Field-Effect Transistor, 30A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 Through Hole - 3 - - - - - - - - - - - - - - - - Compliant - 700 ns - - - 70 mΩ 150 °C -55 °C - - - - - - - - - - - Single - 150 W - 200 ns - 250 V 1 V - - 20 V - - 250 V - - - - - 100 mΩ - 19.5072 mm 15.494 mm -
                                    2SK902
                                    2SK902

                                    Fuji Electric
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Fuji 2SK2648-01
                                    Mfr. Тип
                                    2SK2648-01
                                    Anlielectronics Тип

                                    		Fuji
                                    Power Field-Effect Transistor, 9A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - NO - 3 SILICON 9 A FUJI ELECTRIC CO LTD Fuji 2SK2648-01-FUJI 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active TO-247 - 5.36 - - - - - - - - - AVALANCHE RATED - FET General Purpose Power SINGLE THROUGH-HOLE - unknown 2 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - - - SWITCHING - - N-CHANNEL TO-247 - 9 A 1.5 Ω - 36 A 800 V 241 mJ METAL-OXIDE SEMICONDUCTOR 150 W - - - - -
                                      2SK2648-01
                                      2SK2648-01

                                      Fuji
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      Fuji Electric 2SK3875-01
                                      Mfr. Тип
                                      2SK3875-01
                                      Anlielectronics Тип

                                      		Fuji Electric
                                      Power Field-Effect Transistor, 13A I(D), 900V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - NO - 3 SILICON 13 A FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK3875-01 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-247 - 5.82 - - - - - - - - - - 8541.29.00.95 - SINGLE THROUGH-HOLE - unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE - ENHANCEMENT MODE - - - SWITCHING - - N-CHANNEL TO-247 - - 1 Ω - 52 A 900 V 1006 mJ METAL-OXIDE SEMICONDUCTOR - - - - - -
                                        2SK3875-01
                                        2SK3875-01

                                        Fuji Electric
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Fuji Electric 2SK3504-01
                                        Mfr. Тип
                                        2SK3504-01
                                        Anlielectronics Тип

                                        		Fuji Electric
                                        Power Field-Effect Transistor, 16A I(D), 500V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 Through Hole - 3 - - - FUJI ELECTRIC CO LTD Fuji Electric Co Ltd 2SK3504-01 - - - FLANGE MOUNT, R-PSFM-T3 - - Active TO-220AB - 5.76 Compliant - 35 ns - - - - 150 °C -55 °C - 8541.29.00.95 - - - - unknown 3 - - - Single - 225 W - 18 ns - - - - - 30 V - - 500 V - - - - - 460 mΩ - 15.0114 mm 9.9822 mm 4.4958 mm
                                          2SK3504-01
                                          2SK3504-01

                                          Fuji Electric
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Single definition: The field-effect transistor (FET) is a type of transistor which uses an electric field to control the flow of current. FETs are also known a... Transistors - FETs, MOSFETs - Single Product Listing: 2SK3681-01,2SK3594-01,2SK2690-01,2SK3772-01,2SK3532-01MR.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Single has 114 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.