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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Drain Current-Max (ID) | Drive Voltage (Max Rds On, Min Rds On) | Ihs Manufacturer | Manufacturer | Manufacturer Package Code | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | Subcategory | Technology | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Polarity/Channel Type | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | FET Feature |
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  | Mfr. ТипFDN338P_NLAnlielectronics Тип | Fairchild Semiconductor |
Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 3 | SILICON | - | 1.6 A | - | FAIRCHILD SEMICONDUCTOR CORP | Fairchild Semiconductor Corporation | SUPERSOT | FDN338P_NL | - | 1 | 1 | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOT | - | - | NOT SPECIFIED | 5.3 | - | Yes | - | - | e3 | - | EAR99 | Matte Tin (Sn) | LOGIC LEVEL COMPATIBLE | Other Transistors | - | DUAL | GULL WING | NOT SPECIFIED | compliant | 3 | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | - | - | - | - | - | P-CHANNEL | - | 1.6 A | 0.115 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.5 W | - | ||
| FDN338P_NL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDN340P-NLAnlielectronics Тип | Fairchild Semiconductor |
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FDN340P-NL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDG6301N_NLAnlielectronics Тип | Fairchild Semiconductor |
Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FDG6301N_NL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDN358P_NLAnlielectronics Тип | Fairchild Semiconductor |
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FDN358P_NL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDC655BN_NLAnlielectronics Тип | Fairchild Semiconductor |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FDC655BN_NL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFU430BTUAnlielectronics Тип | Fairchild Semiconductor |
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | I-PAK | - | - | 3.5A (Tc) | - | 10V | - | - | - | - | Fairchild Semiconductor | - | - | - | Bulk | - | - | - | - | - | - | 2.5W (Ta) | Active | - | - | - | - | -55°C ~ 150°C (TJ) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | N-Channel | - | 1.5Ohm @ 1.75A, 10V | 4V @ 250µA | 1050 pF @ 25 V | 33 nC @ 10 V | 500 V | ±30V | - | - | - | - | - | - | - | - | - | - | ||
| IRFU430BTU | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFW720TMAnlielectronics Тип | Fairchild Semiconductor |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRFW720TM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHUF75339S3SAnlielectronics Тип | Fairchild Semiconductor |
Power Field-Effect Transistor, 75A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| HUF75339S3S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF650AAnlielectronics Тип | Fairchild Semiconductor |
Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | 28 A | - | FAIRCHILD SEMICONDUCTOR CORP | Fairchild Semiconductor Corporation | - | IRF650A | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | TO-220, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | - | - | NOT SPECIFIED | 5.33 | - | No | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | FET General Purpose Power | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | TO-220AB | 28 A | 0.085 Ω | 112 A | 200 V | 523 mJ | METAL-OXIDE SEMICONDUCTOR | 156 W | - | ||
| IRF650A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF510AAnlielectronics Тип | Fairchild Semiconductor |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF510A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSFU9130TUAnlielectronics Тип | Fairchild Semiconductor |
Power Field-Effect Transistor, 9.8A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | I-PAK | - | - | 9.8A (Tc) | - | 10V | - | - | - | - | Fairchild Semiconductor | - | - | - | Bulk | - | - | - | - | - | - | 2.5W (Ta), 52W (Tc) | Active | - | - | - | - | -55°C ~ 150°C (TJ) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | P-Channel | - | 300mOhm @ 4.9A, 10V | 4V @ 250µA | 1035 pF @ 25 V | 38 nC @ 10 V | 100 V | ±30V | - | - | - | - | - | - | - | - | - | - | ||
| SFU9130TU | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHUF76129D3Anlielectronics Тип | Fairchild Semiconductor |
Power Field-Effect Transistor, 20A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| HUF76129D3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDP3632_NLAnlielectronics Тип | Fairchild Semiconductor |
Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220AB, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FDP3632_NL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFS820BAnlielectronics Тип | Fairchild Semiconductor |
Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-3 Full Pack | NO | TO-220F-3 | 3 | SILICON | 2.5A (Tj) | 2.5 A | 10V | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | - | IRFS820B | Fairchild Semiconductor | NOT APPLICABLE | 1 | - | Bulk | PLASTIC/EPOXY | TO-220F, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-220F | 33W (Tc) | Active | NOT APPLICABLE | 5.19 | - | Yes | -55°C ~ 150°C (TJ) | - | e3 | Yes | - | MATTE TIN | - | - | MOSFET (Metal Oxide) | SINGLE | THROUGH-HOLE | NOT APPLICABLE | unknown | 3 | R-PSFM-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | N-Channel | SWITCHING | 2.6Ohm @ 1.25A, 10V | 4V @ 250µA | 610 pF @ 25 V | 18 nC @ 10 V | 500 V | ±30V | N-CHANNEL | - | - | 2.6 Ω | 8 A | 500 V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | ||
| IRFS820B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNDC7002N-NLAnlielectronics Тип | Fairchild Semiconductor |
Small Signal Field-Effect Transistor, 0.51A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| NDC7002N-NL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDC5614P-NLAnlielectronics Тип | Fairchild Semiconductor |
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FDC5614P-NL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDS2572_NLAnlielectronics Тип | Fairchild Semiconductor |
Power Field-Effect Transistor, 4.9A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FDS2572_NL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFS254BFP001Anlielectronics Тип | Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | TO-220-3 Full Pack | - | TO-220F | - | - | 16A (Tc) | - | 10V | - | - | - | - | Fairchild Semiconductor | - | - | - | Bulk | - | - | - | - | - | - | 90W (Tc) | Active | - | - | - | - | -55°C ~ 150°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-Channel | - | 140mOhm @ 8A, 10V | 4V @ 250μA | 3400 pF @ 25 V | 123 nC @ 10 V | 250 V | ±30V | - | - | - | - | - | - | - | - | - | - | ||
| IRFS254BFP001 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипISL9N312AD3ST_NLAnlielectronics Тип | Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252AA | - | - | 50A (Tc) | - | 4.5V, 10V | - | - | - | - | Fairchild Semiconductor | - | - | - | Bulk | - | - | - | - | - | - | 75W (Ta) | Obsolete | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-Channel | - | 12mOhm @ 50A, 10V | 3V @ 250μA | 1450 pF @ 15 V | 38 nC @ 10 V | 30 V | ±20V | - | - | - | - | - | - | - | - | - | - | ||
| ISL9N312AD3ST_NL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDS3672-NLAnlielectronics Тип | Fairchild Semiconductor |
Power Field-Effect Transistor, 7.5A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FDS3672-NL |
Индекс :
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