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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Transistor Element Material | Base Product Number | Current - Continuous Drain (Id) @ 25℃ | Drain Current-Max (ID) | Drive Voltage (Max Rds On, Min Rds On) | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | JESD-609 Code | Pbfree Code | Number of Terminations | ECCN Code | Temperature Coefficient | Resistance | Terminal Finish | Composition | Power (Watts) | Additional Feature | Capacitance | Subcategory | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Failure Rate | Configuration | Voltage | Operating Mode | Case Connection | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Polarity/Channel Type | Continuous Drain Current (ID) | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | FET Feature | Features | Height Seated (Max) |
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  | Mfr. ТипIRFR220Anlielectronics Тип | Intersil (Renesas Electronics America) |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 2 | SILICON | - | - | 4.6 A | - | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | IRFR220 | - | - | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | 5.08 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SINGLE | GULL WING | - | unknown | - | R-PSSO-G2 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | TO-252AA | - | 0.8 Ω | 18 A | 200 V | 85 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRFR220 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHUF75842P3Anlielectronics Тип | Intersil (Renesas Electronics America) |
43A, 150V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| HUF75842P3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипITF86130SK8TAnlielectronics Тип | Intersil |
14A, 30V, 0.012OHM, N-CHANNEL ,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC | - | - | - | 14A (Ta) | - | 4V, 10V | - | - | - | Intersil | - | - | - | Bulk | - | - | - | - | - | - | 2.5W (Ta) | Active | - | - | - | - | -55°C ~ 150°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-Channel | - | 7.8mOhm @ 14A, 10V | 2.5V @ 250μA | 3050 pF @ 25 V | 84 nC @ 10 V | 30 V | ±20V | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| ITF86130SK8T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRFD3055LEAnlielectronics Тип | Intersil (Renesas Electronics America) |
12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RFD3055LE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRFD14N05.Anlielectronics Тип | Intersil |
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | PEI-Genesis | - | - | - | Bulk | - | - | - | - | - | - | - | Active | - | - | Non-Compliant | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RFD14N05. | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFP153Anlielectronics Тип | Intersil |
Power Field-effect Transistor, 34A I(d), 60V, 0.08 Ohm, 1-ELEMENT, N-channel, Silicon, Metal-oxide Semiconductor Fet,...
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | - | 34 A | - | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | IRFP153 | - | NOT SPECIFIED | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | NOT SPECIFIED | 5.37 | - | No | - | - | - | - | - | e0 | No | - | - | - | - | TIN LEAD | - | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | R-PSFM-T3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | TO-247 | - | 0.08 Ω | 140 A | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRFP153 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF242Anlielectronics Тип | Intersil |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF242 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF823Anlielectronics Тип | Intersil |
2 A 450 V 4 Ohm N-channel Si Power Mosfet TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Term: ¼in Solder Lug Quick-Connect, w/Resistor | - | NO | - | 3 | SILICON | - | - | 2 A | - | ROCHESTER ELECTRONICS LLC | BARKER MICROFARADS INC | IRF823 | - | NOT SPECIFIED | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | NOT SPECIFIED | 5.08 | Y | No | - | 2.156in x 1.312in Oval Case | - | - | ±5% | e0 | No | - | - | - | - | TIN LEAD | - | - | - | 12DuF | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | R-PSFM-T3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | 370VAC | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | TO-220AB | - | 4 Ω | 7 A | 450 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRF823 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF623RAnlielectronics Тип | Intersil |
POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 150V, 1.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | - | 4 A | - | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | IRF623R | - | NOT SPECIFIED | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | NOT SPECIFIED | 5.28 | - | No | - | - | - | - | - | e0 | No | - | - | - | - | TIN LEAD | - | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | R-PSFM-T3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | TO-220AB | - | 1.2 Ω | 16 A | 150 V | 85 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRF623R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFBC40RAnlielectronics Тип | Intersil |
6.2 A 600 V 1.2 Ohm N-channel Si Power Mosfet TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Axial | NO | Axial | 3 | SILICON | RNC60 | - | 6.2 A | - | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | IRFBC40R | Vishay Dale | NOT SPECIFIED | 1 | - | Tape & Reel (TR) | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | Active | NOT SPECIFIED | 5.21 | Non-Compliant | No | -65°C ~ 175°C | - | Military, MIL-PRF-55182/03, RNC60 | 0.097 Dia x 0.280 L (2.46mm x 7.11mm) | ±0.1% | e0 | No | 2 | - | ±25ppm/°C | 324 kOhms | TIN LEAD | Metal Film | 0.25W, 1/4W | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | R-PSFM-T3 | COMMERCIAL | S (0.001%) | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | TO-220AB | - | 1.2 Ω | 25 A | 600 V | 570 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | Military, Moisture Resistant, Weldable | - | ||
| IRFBC40R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N6757Anlielectronics Тип | Intersil |
Power Field-effect Transistor, 8A I(d), 150V, 0.6 Ohm, 1-ELEMENT, N-channel, Silicon, Metal-oxide Semiconductor Fet,...
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 2 | SILICON | - | - | 8 A | - | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | 2N6757 | - | NOT SPECIFIED | 1 | - | - | METAL | - | ROUND | FLANGE MOUNT | Active | - | - | - | NOT SPECIFIED | 5.21 | Non-Compliant | No | - | - | - | - | - | e0 | No | - | - | - | - | TIN LEAD | - | - | - | - | - | BOTTOM | PIN/PEG | NOT SPECIFIED | unknown | - | O-MBFM-P2 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | TO-204AA | - | 0.6 Ω | 12 A | 150 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| 2N6757 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRFP4N100Anlielectronics Тип | Intersil |
4.3 A 1000 V 3.5 Ohm N-channel Si Power Mosfet TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Axial | - | Axial | - | - | RNC55 | - | - | - | - | - | - | Vishay Dale | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | Active | - | - | Non-Compliant | - | -65°C ~ 175°C | - | Military, MIL-PRF-55182/01, RNC55 | 0.094 Dia x 0.250 L (2.39mm x 6.35mm) | ±1% | - | - | 2 | - | ±25ppm/°C | 7.68 kOhms | - | Metal Film | 0.125W, 1/8W | - | - | - | - | - | - | - | - | - | - | S (0.001%) | - | - | - | - | - | - | - | - | - | - | - | - | - | 6 A | - | - | - | - | - | - | - | - | - | Military, Moisture Resistant, Weldable | - | ||
| RFP4N100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRFP45N06Anlielectronics Тип | Intersil |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RFP45N06 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF512Anlielectronics Тип | Intersil |
Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | - | 4.9 A | - | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | IRF512 | - | NOT SPECIFIED | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | NOT SPECIFIED | 5.08 | Non-Compliant | No | - | - | - | - | - | e0 | No | - | - | - | - | TIN LEAD | - | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | R-PSFM-T3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | TO-220AB | - | 0.74 Ω | 18 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRF512 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFP9140Anlielectronics Тип | Intersil |
TO-247 30PCS/TUBE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | - | 21 A | - | VISHAY SILICONIX | Vishay Siliconix | IRFP9140 | - | - | 1 | 175 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-247 | - | - | 30 | 7.73 | - | No | - | - | - | - | - | e0 | No | - | EAR99 | - | - | TIN LEAD | - | - | AVALANCHE RATED | - | - | SINGLE | THROUGH-HOLE | 240 | unknown | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | P-CHANNEL | - | TO-247 | - | 0.2 Ω | 84 A | 100 V | 960 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRFP9140 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFP142RAnlielectronics Тип | Intersil |
POWER FIELD-EFFECT TRANSISTOR, 2.7A I(D), 100V, 0.099OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | - | 2.7 A | - | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | IRFP142R | - | NOT SPECIFIED | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | NOT SPECIFIED | 5.35 | - | No | - | - | - | - | - | e0 | No | - | - | - | - | TIN LEAD | - | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | R-PSFM-T3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | TO-247 | - | 0.099 Ω | 110 A | 100 V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRFP142R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF322Anlielectronics Тип | Intersil |
Vicor VI-RF322-CUYY
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 2 | SILICON | - | - | 2.8 A | - | INTERNATIONAL RECTIFIER CORP | International Rectifier | IRF322 | - | - | 1 | 150 °C | - | METAL | FLANGE MOUNT, O-MBFM-P2 | ROUND | FLANGE MOUNT | Transferred | - | - | - | - | 5.37 | - | No | - | - | - | - | - | e0 | - | - | - | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | FET General Purpose Power | BOTTOM | PIN/PEG | - | unknown | - | O-MBFM-P2 | Not Qualified | - | SINGLE | - | ENHANCEMENT MODE | DRAIN | - | - | - | - | - | - | - | - | N-CHANNEL | - | TO-204AA | 2.8 A | 2.5 Ω | 10 A | 400 V | - | METAL-OXIDE SEMICONDUCTOR | 50 W | - | - | - | ||
| IRF322 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF343Anlielectronics Тип | Intersil |
TRANS MOSFET N-CH 350V 8.3A
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 2 | SILICON | - | - | 8.3 A | - | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | IRF343 | - | - | 1 | - | - | METAL | - | ROUND | FLANGE MOUNT | Active | - | - | - | - | 5.2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | BOTTOM | PIN/PEG | - | unknown | - | O-MBFM-P2 | COMMERCIAL | - | SINGLE | - | ENHANCEMENT MODE | DRAIN | - | - | - | - | - | - | - | - | N-CHANNEL | - | TO-204AA | - | 0.8 Ω | 33 A | 350 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRF343 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF353Anlielectronics Тип | Intersil |
Power Field-Effect Transistor, 12A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 2 | SILICON | - | - | 13 A | - | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | IRF353 | - | NOT SPECIFIED | 1 | - | - | METAL | - | ROUND | FLANGE MOUNT | Active | - | - | - | NOT SPECIFIED | 5.19 | - | No | - | - | - | - | - | e0 | No | - | - | - | - | TIN LEAD | - | - | - | - | - | BOTTOM | PIN/PEG | NOT SPECIFIED | unknown | - | O-MBFM-P2 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | TO-204AA | - | 0.4 Ω | 52 A | 350 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRF353 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFU110Anlielectronics Тип | Intersil |
Trans MOSFET N-CH 100V 4.7A 3-Pin TO-251AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | - | 4.7 A | - | ROCHESTER ELECTRONICS LLC | Rochester Electronics LLC | IRFU110 | - | - | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | IN-LINE | Active | - | - | - | - | 5.15 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSIP-T3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | - | TO-251AA | - | 0.54 Ω | 17 A | 100 V | 19 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRFU110 |
Индекс :
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