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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Drain Current-Max (ID) | Drive Voltage (Max Rds On, Min Rds On) | ECCN | Harmonized Code | Ihs Manufacturer | Itar Registered | Manufacturer | Manufacturer Part Number | Mfr | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | Subcategory | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Polarity/Channel Type | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | FET Feature | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max |
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  | Mfr. ТипIRFR220Anlielectronics Тип | Intersil (Renesas Electronics America) |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | 2 | SILICON | - | 4.6 A | - | - | - | ROCHESTER ELECTRONICS LLC | - | Rochester Electronics LLC | IRFR220 | - | - | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | 5.08 | - | - | - | - | - | - | - | - | - | - | - | - | SINGLE | GULL WING | - | unknown | - | R-PSSO-G2 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | TO-252AA | - | 0.8 Ω | 18 A | 200 V | 85 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRFR220 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHUF75842P3Anlielectronics Тип | Intersil (Renesas Electronics America) |
43A, 150V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| HUF75842P3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипITF86130SK8TAnlielectronics Тип | Intersil |
14A, 30V, 0.012OHM, N-CHANNEL ,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC | - | - | 14A (Ta) | - | 4V, 10V | - | - | - | - | - | - | Intersil | - | - | - | Bulk | - | - | - | - | - | - | 2.5W (Ta) | Active | - | - | - | - | - | - | -55°C ~ 150°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-Channel | - | 7.8mOhm @ 14A, 10V | 2.5V @ 250μA | 3050 pF @ 25 V | 84 nC @ 10 V | 30 V | ±20V | - | - | - | - | - | - | - | - | - | - | - | - | ||
| ITF86130SK8T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRFD3055LEAnlielectronics Тип | Intersil (Renesas Electronics America) |
12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RFD3055LE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипJANTX2N7227Anlielectronics Тип | Intersil |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| JANTX2N7227 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFU420Anlielectronics Тип | Intersil |
Trans MOSFET N-CH 500V 2.4A 3-Pin(3+Tab) TO-251AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRFU420 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF240Anlielectronics Тип | Intersil |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF240 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFP9140Anlielectronics Тип | Intersil |
TO-247 30PCS/TUBE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | 21 A | - | - | - | VISHAY SILICONIX | - | Vishay Siliconix | IRFP9140 | - | - | 1 | 175 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-247 | - | - | 30 | 7.73 | - | No | - | - | - | - | e0 | No | EAR99 | TIN LEAD | AVALANCHE RATED | - | SINGLE | THROUGH-HOLE | 240 | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | P-CHANNEL | TO-247 | - | 0.2 Ω | 84 A | 100 V | 960 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRFP9140 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFU110Anlielectronics Тип | Intersil |
Trans MOSFET N-CH 100V 4.7A 3-Pin TO-251AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | 4.7 A | - | - | - | ROCHESTER ELECTRONICS LLC | - | Rochester Electronics LLC | IRFU110 | - | - | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | IN-LINE | Active | - | - | - | - | 5.15 | - | - | - | - | - | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSIP-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | TO-251AA | - | 0.54 Ω | 17 A | 100 V | 19 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRFU110 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFP142RAnlielectronics Тип | Intersil |
POWER FIELD-EFFECT TRANSISTOR, 2.7A I(D), 100V, 0.099OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | 2.7 A | - | - | - | ROCHESTER ELECTRONICS LLC | - | Rochester Electronics LLC | IRFP142R | - | NOT SPECIFIED | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | NOT SPECIFIED | 5.35 | - | No | - | - | - | - | e0 | No | - | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | R-PSFM-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | TO-247 | - | 0.099 Ω | 110 A | 100 V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRFP142R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRFD7N10LEAnlielectronics Тип | Intersil |
N-channel Power Mosfet
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RFD7N10LE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N6895Anlielectronics Тип | Intersil |
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1.16A I(D), 100V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-205AF
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | 1.16 A | - | - | - | ROCHESTER ELECTRONICS LLC | - | Rochester Electronics LLC | 2N6895 | - | NOT SPECIFIED | 1 | - | - | METAL | - | ROUND | CYLINDRICAL | Active | - | - | - | NOT SPECIFIED | 5.34 | - | No | - | - | - | - | e0 | No | - | TIN LEAD | RADIATION HARDENED | - | BOTTOM | WIRE | NOT SPECIFIED | unknown | - | O-MBCY-W3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | P-CHANNEL | TO-205AF | - | 3.65 Ω | - | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | 30 pF | - | ||
| 2N6895 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFU320Anlielectronics Тип | Intersil |
MOSFET N-CH 400V 3.1A TO251AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | 3.1 A | - | - | - | ROCHESTER ELECTRONICS LLC | - | Rochester Electronics LLC | IRFU320 | - | - | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | IN-LINE | Active | - | - | - | - | 5.16 | - | - | - | - | - | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSIP-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | TO-251AA | - | 1.8 Ω | 12 A | 400 V | 190 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRFU320 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N6758Anlielectronics Тип | Intersil |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 2 | SILICON | - | 9 A | - | - | - | HARRIS SEMICONDUCTOR | - | Harris Semiconductor | 2N6758 | - | - | 1 | 150 °C | - | METAL | FLANGE MOUNT, O-MBFM-P2 | ROUND | FLANGE MOUNT | Obsolete | - | - | - | NOT SPECIFIED | 7.58 | - | No | 90 ns | 80 ns | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | RADIATION HARDENED | FET General Purpose Power | BOTTOM | PIN/PEG | NOT SPECIFIED | unknown | - | O-MBFM-P2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | TO-204AA | 9 A | 0.4 Ω | 15 A | 200 V | - | METAL-OXIDE SEMICONDUCTOR | 75 W | - | 150 pF | 75 W | ||
| 2N6758 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF353Anlielectronics Тип | Intersil |
Power Field-Effect Transistor, 12A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 2 | SILICON | - | 13 A | - | - | - | ROCHESTER ELECTRONICS LLC | - | Rochester Electronics LLC | IRF353 | - | NOT SPECIFIED | 1 | - | - | METAL | - | ROUND | FLANGE MOUNT | Active | - | - | - | NOT SPECIFIED | 5.19 | - | No | - | - | - | - | e0 | No | - | TIN LEAD | - | - | BOTTOM | PIN/PEG | NOT SPECIFIED | unknown | - | O-MBFM-P2 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | TO-204AA | - | 0.4 Ω | 52 A | 350 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRF353 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFF321Anlielectronics Тип | Intersil |
N-channel Power Mosfet
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | 2.5 A | - | - | - | ROCHESTER ELECTRONICS LLC | - | Rochester Electronics LLC | IRFF321 | - | NOT SPECIFIED | 1 | - | - | METAL | - | ROUND | CYLINDRICAL | Active | - | - | - | NOT SPECIFIED | 5.39 | - | No | - | - | - | - | e0 | No | - | TIN LEAD | - | - | BOTTOM | WIRE | NOT SPECIFIED | unknown | - | O-MBCY-W3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | TO-205AF | - | 1.8 Ω | 10 A | 350 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRFF321 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF621Anlielectronics Тип | Intersil |
Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | 5 A | - | - | - | ROCHESTER ELECTRONICS LLC | - | Marathon Electric | ------ | - | NOT SPECIFIED | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | NOT SPECIFIED | 5.08 | Non-Compliant | No | - | - | - | - | e0 | No | - | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | R-PSFM-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | TO-220AB | - | 0.8 Ω | 20 A | 150 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRF621 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFP153Anlielectronics Тип | Intersil |
Power Field-effect Transistor, 34A I(d), 60V, 0.08 Ohm, 1-ELEMENT, N-channel, Silicon, Metal-oxide Semiconductor Fet,...
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | 34 A | - | - | - | ROCHESTER ELECTRONICS LLC | - | Rochester Electronics LLC | IRFP153 | - | NOT SPECIFIED | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | NOT SPECIFIED | 5.37 | - | No | - | - | - | - | e0 | No | - | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | R-PSFM-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | - | - | - | - | N-CHANNEL | TO-247 | - | 0.08 Ω | 140 A | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| IRFP153 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFD9113Anlielectronics Тип | Intersil |
600 Ma 80 V P-channel Si Small Signal Mosfet
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | - | 0.6 A | - | EAR99 | ROCHESTER ELECTRONICS LLC | Unavailable | Rochester Electronics LLC | IRFD9113 | - | - | 1 | - | - | PLASTIC/EPOXY | - | RECTANGULAR | IN-LINE | Active | - | - | - | - | 5.4 | - | - | - | - | - | - | - | - | - | - | - | - | DUAL | THROUGH-HOLE | - | unknown | - | R-PDIP-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | - | - | - | - | - | P-CHANNEL | - | - | 1.6 Ω | - | 80 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | |||
| IRFD9113 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRFG45N06Anlielectronics Тип | Intersil |
45 A 60 V 0.028 Ohm N-channel Si Power Mosfet TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RFG45N06 |
Индекс :
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