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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Weight | Transistor Element Material | Manufacturer Package Identifier | Current - Continuous Drain (Id) @ 25℃ | Drive Voltage (Max Rds On, Min Rds On) | Number of Elements | Power Dissipation (Max) | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Additional Feature | HTS Code | Voltage - Rated DC | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Current Rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Voltage | Element Configuration | Current | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Vgs (Max) | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | Recovery Time | Max Junction Temperature (Tj) | Nominal Vgs | Switching Current | Feedback Cap-Max (Crss) | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипBSS138LAnlielectronics Тип | ON Semiconductor |
MOSFET N-CH 50V 0.2A SOT-23
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | - | Surface Mount | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | 3 | 30mg | SILICON | - | 200mA Ta | 2.75V 5V | 1 | 350mW Ta | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | - | Tin (Sn) | - | - | - | DUAL | GULL WING | 260 | - | 40 | 3 | - | - | Not Qualified | - | 1 | - | Single | - | ENHANCEMENT MODE | 225mW | - | 20 ns | N-Channel | SWITCHING | 3.5 Ω @ 200mA, 5V | 1.5V @ 1mA | - | 50pF @ 25V | 2.4nC @ 10V | 1.8ns | - | ±20V | 5.1 ns | 200mA | 1.25V | - | 20V | 0.2A | - | 50V | - | - | - | - | - | 150°C | - | - | 5 pF | 1.11mm | - | - | - | No SVHC | ROHS3 Compliant | - | ||
| BSS138L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNVR5198NLT1GAnlielectronics Тип | ON Semiconductor |
MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Tin | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | YES | 3 | - | - | - | 1.7A Ta | 4.5V 10V | - | 900mW Ta | 13 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | - | e3 | yes | Active | 1 (Unlimited) | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | 3 | - | - | - | - | 1 | - | Single | - | - | 1.5W | - | 5 ns | N-Channel | - | 155m Ω @ 1A, 10V | 2.5V @ 250μA | Halogen Free | 182pF @ 25V | 5.1nC @ 10V | 7ns | - | ±20V | 2 ns | 2.2A | 2.5V | - | 20V | - | - | 60V | - | - | - | - | - | - | - | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| NVR5198NLT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAO3422Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 55V 2.1A SOT23
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | 3 | - | SILICON | - | 2.1A Ta | 2.5V 4.5V | 1 | 1.25W Ta | 16.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | - | e3 | yes | Active | 1 (Unlimited) | 3 | - | - | - | Matte Tin (Sn) | - | - | - | DUAL | GULL WING | - | - | - | 3 | - | - | - | SINGLE WITH BUILT-IN DIODE | 1 | - | - | - | ENHANCEMENT MODE | 1.25W | - | 2.3 ns | N-Channel | SWITCHING | 160m Ω @ 2.1A, 4.5V | 2V @ 250μA | - | 300pF @ 25V | 3.3nC @ 4.5V | - | - | ±12V | - | 2.1A | 1.3V | - | 12V | - | - | 55V | - | - | - | - | - | 150°C | - | - | - | 1.25mm | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| AO3422 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNDS0605Anlielectronics Тип | ON Semiconductor |
Trans MOSFET P-CH 60V 0.18A 3-Pin SOT-23 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | Surface Mount | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | 3 | 30mg | SILICON | - | 180mA Ta | 4.5V 10V | 1 | 360mW Ta | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | - | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | 5Ohm | - | - | - | -60V | DUAL | GULL WING | - | -180mA | - | - | - | - | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 360mW | - | 5 ns | P-Channel | SWITCHING | 5 Ω @ 500mA, 10V | 3V @ 250μA | - | 79pF @ 25V | 2.5nC @ 10V | 6.3ns | 60V | ±20V | 6.3 ns | 180mA | -1.7V | - | 20V | - | - | -60V | - | -60V | - | - | - | 150°C | -1.7 V | - | 5 pF | 1.2mm | 2.92mm | 3.05mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| NDS0605 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2N7002P,215Anlielectronics Тип | Nexperia USA Inc. |
MOSFET N-CH 60V 0.36A SOT-23
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | - | - | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | YES | 3 | - | SILICON | - | 360mA Ta | 10V | 1 | 350mW Ta | - | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | - | e3 | - | Active | 1 (Unlimited) | 3 | - | EAR99 | - | Tin (Sn) | LOGIC LEVEL COMPATIBLE | 8541.21.00.75 | - | DUAL | GULL WING | - | - | - | 3 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | - | - | N-Channel | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | - | 50pF @ 10V | 0.8nC @ 4.5V | - | 60V | ±20V | - | - | - | - | - | - | - | - | - | - | 60V | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| 2N7002P,215 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипRUM002N02T2LAnlielectronics Тип
IN STOCK: 300000
| ROHM Semiconductor |
MOSFET N-CH 20V 0.2A VMT3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | Copper, Tin | Surface Mount | Surface Mount | SOT-723 | - | 3 | - | SILICON | - | 200mA Ta | 1.2V 2.5V | 1 | 150mW Ta | 15 ns | 150°C TJ | Tape & Reel (TR) | 2009 | - | e2 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | - | Tin/Copper (Sn/Cu) | - | - | - | DUAL | FLAT | 260 | - | 10 | 3 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | 150mW | - | 5 ns | N-Channel | SWITCHING | 1.2 Ω @ 200mA, 2.5V | 1V @ 1mA | - | 25pF @ 10V | - | 10ns | - | ±8V | 10 ns | 200mA | - | - | 8V | 0.2A | 1.4Ohm | 20V | - | - | - | - | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| RUM002N02T2L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPMZ350UPEYLAnlielectronics Тип | Nexperia USA Inc. |
PMZ350UPE - 20 V, P-channel Trench MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | - | Surface Mount | Surface Mount | SC-101, SOT-883 | - | - | - | SILICON | - | 1A Ta | 1.8V 4.5V | 1 | 360mW Ta 3.125W Tc | - | -55°C~150°C TJ | Tape & Reel (TR) | - | - | - | - | Active | 1 (Unlimited) | 3 | - | - | 330mOhm | - | - | - | - | BOTTOM | NO LEAD | - | - | - | 3 | IEC-60134 | R-PBCC-N3 | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | P-Channel | SWITCHING | 450m Ω @ 300mA, 4.5V | 950mV @ 250μA | - | 127pF @ 10V | 1.9nC @ 4.5V | - | 20V | ±8V | - | 1A | - | - | - | 1A | - | - | - | - | 20V | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| PMZ350UPEYL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBSS123LT1GAnlielectronics Тип | ON Semiconductor |
MOSFET N-CH 100V 170MA SOT-23
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | Surface Mount | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | 3 | - | SILICON | - | 170mA Ta | 10V | 1 | 225mW Ta | 40 ns | -55°C~150°C TJ | Cut Tape (CT) | 2003 | - | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | 6Ohm | - | - | - | 100V | DUAL | GULL WING | 260 | 170mA | 40 | 3 | - | - | - | - | - | - | Single | - | ENHANCEMENT MODE | 225mW | - | 20 ns | N-Channel | SWITCHING | 6 Ω @ 100mA, 10V | 2.6V @ 1mA | - | 20pF @ 25V | - | - | - | ±20V | - | 170mA | 800mV | - | 20V | - | - | 100V | - | - | - | - | - | - | 20 V | - | - | 1.01mm | 3.04mm | 1.4mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| BSS123LT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFR024NTRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 55V 17A DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | 3 | - | SILICON | - | 17A Tc | 10V | 1 | 45W Tc | 19 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 75mOhm | - | AVALANCHE RATED, ULTRA LOW RESISTANCE | - | 55V | - | GULL WING | - | 17A | - | - | - | R-PSSO-G2 | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 38W | DRAIN | 4.9 ns | N-Channel | SWITCHING | 75m Ω @ 10A, 10V | 4V @ 250μA | - | 370pF @ 25V | 20nC @ 10V | 34ns | - | ±20V | 27 ns | 17A | 4V | TO-252AA | 20V | - | - | 55V | 68A | 55V | - | - | 83 ns | 175°C | 4 V | - | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRFR024NTRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR5410TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET P-CH 100V 13A DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | 3 | - | SILICON | - | 13A Tc | 10V | 1 | 66W Tc | 45 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | - | EAR99 | 205mOhm | - | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | - | -100V | - | GULL WING | 260 | -13A | 30 | - | - | R-PSSO-G2 | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 66W | DRAIN | 15 ns | P-Channel | SWITCHING | 205m Ω @ 7.8A, 10V | 4V @ 250μA | - | 760pF @ 25V | 58nC @ 10V | 58ns | 100V | ±20V | 46 ns | -13A | -4V | TO-252AA | 20V | - | - | -100V | 52A | -100V | - | - | 190 ns | 150°C | -4 V | - | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRFR5410TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF9540NSTRLPBFAnlielectronics Тип | Infineon Technologies |
MOSFET P-CH 100V 23A D2PAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | - | 3 | - | SILICON | - | 23A Tc | 10V | 1 | 3.1W Ta 110W Tc | 40 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 117mOhm | - | AVALANCHE RATED, HIGH RELIABILITY | - | -100V | - | GULL WING | 260 | -23A | 30 | - | - | R-PSSO-G2 | - | - | 1 | 100V | Single | 23A | ENHANCEMENT MODE | 3.8W | DRAIN | 13 ns | P-Channel | SWITCHING | 117m Ω @ 14A, 10V | 4V @ 250μA | - | 1450pF @ 25V | 110nC @ 10V | 67ns | - | ±20V | 51 ns | -23A | -4V | - | 20V | - | - | -100V | - | 100V | - | 84 mJ | 210 ns | 150°C | -4 V | - | - | 5.084mm | 10.668mm | 9.65mm | No | No SVHC | ROHS3 Compliant | Contains Lead | ||
| IRF9540NSTRLPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDB33N25TMAnlielectronics Тип | ON Semiconductor |
MOSFET N-CH 250V 33A D2PAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | ACTIVE (Last Updated: 19 hours ago) | Tin | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | - | 3 | 1.31247g | SILICON | - | 33A Tc | 10V | 1 | 235W Tc | 75 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | UniFET™ | e3 | yes | Active | 1 (Unlimited) | 2 | - | EAR99 | 94MOhm | - | FAST SWITCHING, AVALANCHE RATED | - | - | - | GULL WING | - | - | - | - | - | R-PSSO-G2 | - | - | - | - | Single | - | ENHANCEMENT MODE | 235W | DRAIN | 35 ns | N-Channel | SWITCHING | 94m Ω @ 16.5A, 10V | 5V @ 250μA | - | 2135pF @ 25V | 48nC @ 10V | 230ns | - | ±30V | 120 ns | 33A | 3V | - | 30V | - | - | 250V | - | - | - | - | - | - | 3 V | - | - | 4.83mm | 10.67mm | 11.33mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDB33N25TM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF4905STRLPBFAnlielectronics Тип | Infineon Technologies |
MOSFET P-CH 55V 42A D2PAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | - | 3 | - | SILICON | D2Pak | 42A Tc | 10V | 1 | 170W Tc | 51 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 20mOhm | - | HIGH RELIABILITY, AVALANCHE RATED | - | -55V | - | GULL WING | 260 | -74A | 30 | - | - | R-PSSO-G2 | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 3.8W | DRAIN | 20 ns | P-Channel | SWITCHING | 20m Ω @ 42A, 10V | 4V @ 250μA | - | 3500pF @ 25V | 180nC @ 10V | 99ns | 55V | ±20V | 64 ns | -42A | -2V | - | 20V | - | - | -55V | 280A | -55V | - | - | 92 ns | 150°C | -4 V | - | - | 4.83mm | 10.54mm | 10.54mm | No | No SVHC | ROHS3 Compliant | Contains Lead | ||
| IRF4905STRLPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR6215TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET P-CH 150V 13A DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | 3 | - | SILICON | - | 13A Tc | 10V | 1 | 110W Tc | 53 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 295mOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED | - | -150V | - | GULL WING | 260 | -13A | 30 | - | - | R-PSSO-G2 | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 110W | DRAIN | 14 ns | P-Channel | SWITCHING | 295m Ω @ 6.6A, 10V | 4V @ 250μA | - | 860pF @ 25V | 66nC @ 10V | 36ns | 150V | ±20V | 37 ns | -13A | -4V | TO-252AA | 20V | - | - | -150V | 44A | -150V | - | - | 240 ns | 175°C | -4 V | - | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRFR6215TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR5505TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET P-CH 55V 18A DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | 3 | - | SILICON | - | 18A Tc | 10V | 1 | 57W Tc | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 110mOhm | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - | -55V | - | GULL WING | 260 | -18A | 30 | - | - | R-PSSO-G2 | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 57W | DRAIN | 12 ns | P-Channel | SWITCHING | 110m Ω @ 9.6A, 10V | 4V @ 250μA | - | 650pF @ 25V | 32nC @ 10V | 28ns | 55V | ±20V | 16 ns | -18A | -4V | TO-252AA | 20V | - | - | -55V | 64A | -55V | - | - | 77 ns | 150°C | -4 V | - | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRFR5505TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBSS84LT1GAnlielectronics Тип | ON Semiconductor |
ON SEMICONDUCTOR - BSS84LT1G - Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | ACTIVE (Last Updated: 4 days ago) | Tin | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | YES | 3 | - | SILICON | - | 130mA Ta | 5V | 1 | 225mW Ta | 16 ns | -55°C~150°C TJ | Cut Tape (CT) | 2004 | - | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | 10Ohm | - | - | - | -50V | DUAL | GULL WING | 260 | -130mA | 10 | 3 | - | - | - | - | - | - | Single | - | ENHANCEMENT MODE | 225mW | - | 3.6 ns | P-Channel | SWITCHING | 10 Ω @ 100mA, 5V | 2V @ 250μA | Halogen Free | 30pF @ 5V | - | 1ns | - | ±20V | 1 ns | 130mA | -2V | - | 20V | - | - | 50V | - | - | - | - | - | - | 2 V | - | - | 1.016mm | 3.0226mm | 1.397mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| BSS84LT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRLL014NTRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 55V 2A SOT223
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-261-4, TO-261AA | - | 3 | - | SILICON | - | 2A Ta | 4V 10V | 1 | 1W Ta | 14 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 4 | - | EAR99 | 200mOhm | - | AVALANCHE RATED, ULTRA LOW RESISTANCE | - | 55V | DUAL | GULL WING | - | 2A | - | - | - | R-PDSO-G4 | - | - | - | - | Single | - | ENHANCEMENT MODE | 2.1W | DRAIN | 5.1 ns | N-Channel | SWITCHING | 140m Ω @ 2A, 10V | 2V @ 250μA | - | 230pF @ 25V | 14nC @ 10V | 4.9ns | - | ±16V | 2.9 ns | 2A | 2V | - | 16V | 2A | - | 55V | - | 55V | - | - | 61 ns | - | 2 V | - | - | 1.4478mm | 6.6802mm | 3.7mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRLL014NTRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR220NTRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 200V 5A DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | 3 | - | SILICON | - | 5A Tc | 10V | 1 | 43W Tc | 20 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 600MOhm | - | - | - | 200V | - | GULL WING | 260 | 5A | 30 | - | - | R-PSSO-G2 | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 43W | DRAIN | 6.4 ns | N-Channel | SWITCHING | 600m Ω @ 2.9A, 10V | 4V @ 250μA | - | 300pF @ 25V | 23nC @ 10V | 11ns | - | ±20V | 12 ns | 5A | 4V | TO-252AA | 20V | 5A | - | 200V | 20A | 200V | - | 46 mJ | 140 ns | 175°C | 4 V | 5A | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRFR220NTRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFP260NPBFAnlielectronics Тип | Infineon Technologies |
Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.04 Ohm; Id 50A; TO-247AC; Pd 300W; Vgs +/-20V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Through Hole | Through Hole | TO-247-3 | - | 3 | - | SILICON | - | 50A Tc | 10V | 1 | 300W Tc | 55 ns | -55°C~175°C TJ | Bulk | 2004 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 40mOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - | 200V | - | - | 250 | 50A | 30 | - | - | - | - | - | - | - | Single | - | ENHANCEMENT MODE | 300W | DRAIN | 17 ns | N-Channel | SWITCHING | 40m Ω @ 28A, 10V | 4V @ 250μA | - | 4057pF @ 25V | 234nC @ 10V | 60ns | - | ±20V | 48 ns | 50A | 4V | TO-247AC | 20V | - | - | 200V | 200A | 200V | - | 560 mJ | 402 ns | - | 4 V | - | - | 20.2946mm | 15.875mm | 5.3mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRFP260NPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR9024NTRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET P-CH 55V 11A DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | 3 | - | SILICON | - | 11A Tc | 10V | 1 | 38W Tc | 23 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 175mOhm | - | AVALANCHE RATED, HIGH RELIABILITY | - | -55V | - | GULL WING | 260 | -11A | 30 | - | - | R-PSSO-G2 | - | - | 1 | - | Single | - | ENHANCEMENT MODE | 38W | DRAIN | 13 ns | P-Channel | SWITCHING | 175m Ω @ 6.6A, 10V | 4V @ 250μA | - | 350pF @ 25V | 19nC @ 10V | 55ns | - | ±20V | 37 ns | -11A | -4V | TO-252AA | 20V | - | - | -55V | 44A | 55V | - | 62 mJ | 71 ns | 150°C | -4 V | - | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRFR9024NTRPBF |
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