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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Number of Pins | Weight | Transistor Element Material | Manufacturer Package Identifier | Current - Continuous Drain (Id) @ 25℃ | Drive Voltage (Max Rds On, Min Rds On) | Number of Elements | Power Dissipation (Max) | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Additional Feature | Voltage - Rated DC | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Current Rating | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Qualification Status | Lead Pitch | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Vgs (Max) | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | Avalanche Energy Rating (Eas) | Recovery Time | Max Junction Temperature (Tj) | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
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  | Mfr. ТипFDS4465Anlielectronics Тип | ON Semiconductor |
In a Pack of 5, FDS4465 P-Channel MOSFET, 13.5 A, 20 V, 8-Pin SOIC ON Semiconductor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 130mg | SILICON | - | 13.5A Ta | 1.8V 4.5V | 1 | 2.5W Ta | 300 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2003 | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 8.5MOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | - | -20V | DUAL | GULL WING | - | -13.5A | - | - | - | - | - | 1 | Single | ENHANCEMENT MODE | 2.5W | - | 20 ns | P-Channel | SWITCHING | 8.5m Ω @ 13.5A, 4.5V | 1.5V @ 250μA | 8237pF @ 10V | 120nC @ 4.5V | 24ns | 20V | ±8V | 140 ns | 13.5A | -600mV | - | 8V | - | -20V | 50A | -20V | - | - | 175°C | -600 mV | - | 1.75mm | 5mm | 4mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDS4465 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDS6681ZAnlielectronics Тип | ON Semiconductor |
ON SEMICONDUCTOR - FDS6681Z - MOSFET Transistor, P Channel, -20 A, -30 V, 0.0038 ohm, -10 V, -1.8 V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 130mg | SILICON | - | 20A Ta | 4.5V 10V | 1 | 2.5W Ta | 660 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.6MOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | - | -30V | DUAL | GULL WING | - | -20A | - | - | - | - | - | 1 | Single | ENHANCEMENT MODE | 2.5W | - | 20 ns | P-Channel | SWITCHING | 4.6m Ω @ 20A, 10V | 3V @ 250μA | 7540pF @ 15V | 260nC @ 10V | 9ns | - | ±25V | 380 ns | -20A | -1.8V | - | 25V | - | -30V | - | 30V | - | - | 150°C | 1.8 V | - | 1.75mm | 5mm | 4mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDS6681Z | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRLR2905TRPBFAnlielectronics Тип | Infineon Technologies |
In a Tube of 75, N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK Infineon IRLR2905PBF
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | - | SILICON | - | 42A Tc | 4V 10V | 1 | 110W Tc | 26 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2000 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 27mOhm | - | AVALANCHE RATED | 55V | - | GULL WING | 260 | 41A | 30 | R-PSSO-G2 | - | - | - | 1 | Single | ENHANCEMENT MODE | 69W | DRAIN | 11 ns | N-Channel | SWITCHING | 27m Ω @ 25A, 10V | 2V @ 250μA | 1700pF @ 25V | 48nC @ 5V | 84ns | - | ±16V | 15 ns | 42A | 2V | TO-252AA | 16V | 20A | 55V | - | 55V | - | 120 ns | 175°C | 2 V | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRLR2905TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR9120NTRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET P-CH 100V 6.6A DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | - | SILICON | - | 6.6A Tc | 10V | 1 | 40W Tc | 28 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 480mOhm | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | -100V | - | GULL WING | 260 | -6.6A | 30 | R-PSSO-G2 | - | - | - | - | Single | ENHANCEMENT MODE | 40W | DRAIN | 14 ns | P-Channel | SWITCHING | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 350pF @ 25V | 27nC @ 10V | 47ns | - | ±20V | 31 ns | -6.6A | -4V | TO-252AA | 20V | - | -100V | 26A | 100V | - | 150 ns | - | -4 V | - | 2.3876mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRFR9120NTRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNDS355ANAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N-CH 30V 1.7A 3-Pin SuperSOT T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | Surface Mount | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | SILICON | - | 1.7A Ta | 4.5V 10V | 1 | 500mW Ta | 13 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | - | e3 | yes | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 85mOhm | - | - | 30V | DUAL | GULL WING | NOT SPECIFIED | 1.7A | NOT SPECIFIED | - | Not Qualified | - | - | 1 | Single | ENHANCEMENT MODE | 500mW | - | 10 ns | N-Channel | SWITCHING | 85m Ω @ 1.9A, 10V | 2V @ 250μA | 195pF @ 15V | 5nC @ 5V | 32ns | - | ±20V | 32 ns | 1.7A | - | - | 20V | - | 30V | - | 30V | - | - | 150°C | 1.6 V | - | 1.22mm | 2.92mm | 3.05mm | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| NDS355AN | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNDT2955Anlielectronics Тип | ON Semiconductor |
MOSFET P-CH 60V 2.5A SOT-223-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | Surface Mount | Surface Mount | TO-261-4, TO-261AA | 4 | 250.2mg | SILICON | - | 2.5A Ta | 4.5V 10V | 1 | 3W Ta | 19 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | - | e3 | yes | Active | 1 (Unlimited) | 4 | - | EAR99 | 300MOhm | - | - | -60V | DUAL | GULL WING | - | -2.5A | - | - | - | - | - | 1 | Single | ENHANCEMENT MODE | 3W | DRAIN | 12 ns | P-Channel | SWITCHING | 300m Ω @ 2.5A, 10V | 4V @ 250μA | 601pF @ 30V | 15nC @ 10V | 10ns | - | ±20V | 6 ns | 2.5A | 2.6V | - | 20V | - | -60V | - | 60V | - | - | 150°C | -2.6 V | - | 1.8mm | 6.5mm | 3.56mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| NDT2955 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRLR024NTRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 55V 17A DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | - | SILICON | - | 17A Tc | 4V 10V | 1 | 45W Tc | 20 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 80mOhm | - | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 55V | - | GULL WING | 260 | 17A | 30 | R-PSSO-G2 | - | - | - | 1 | Single | ENHANCEMENT MODE | 45W | DRAIN | 7.1 ns | N-Channel | SWITCHING | 65m Ω @ 10A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 74ns | - | ±16V | 29 ns | 17A | 2V | TO-252AA | 16V | - | 55V | 72A | 55V | 68 mJ | 90 ns | 175°C | 2 V | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRLR024NTRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRLL2705TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 55V 3.8A SOT223
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-261-4, TO-261AA | 3 | - | SILICON | - | 3.8A Ta | 4V 10V | 1 | 1W Ta | 35 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 4 | - | EAR99 | 40mOhm | Matte Tin (Sn) | LOGIC LEVEL COMPATIBLE | 55V | DUAL | GULL WING | 260 | 3.8A | 30 | R-PDSO-G4 | - | - | - | 1 | Single | ENHANCEMENT MODE | 2.1W | DRAIN | 6.2 ns | N-Channel | - | 40m Ω @ 3.8A, 10V | 2V @ 250μA | 870pF @ 25V | 48nC @ 10V | 12ns | - | ±16V | 22 ns | 3.8A | 2V | - | 16V | 5.2A | 55V | - | 55V | - | 88 ns | 150°C | 2 V | - | 1.8mm | 6.6802mm | 6.7mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRLL2705TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF7425TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET P-CH 20V 15A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | SILICON | - | 15A Ta | 2.5V 4.5V | 1 | 2.5W Ta | 230 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 8.2MOhm | - | - | -20V | DUAL | GULL WING | 260 | -15A | 30 | - | - | - | - | 1 | Single | ENHANCEMENT MODE | 2.5W | - | 13 ns | P-Channel | SWITCHING | 8.2m Ω @ 15A, 4.5V | 1.2V @ 250μA | 7980pF @ 15V | 130nC @ 4.5V | 20ns | - | ±12V | 160 ns | -15A | -1.2V | - | 12V | - | -20V | 60A | 20V | - | 180 ns | 150°C | 1.2 V | - | 1.75mm | 4.9784mm | 3.9878mm | No | No SVHC | ROHS3 Compliant | Contains Lead | ||
| IRF7425TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF540NSTRLPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 100V 33A D2PAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | - | SILICON | - | 33A Tc | 10V | 1 | 130W Tc | 39 ns | -55°C~175°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 44MOhm | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 100V | - | GULL WING | 260 | 33A | 30 | R-PSSO-G2 | - | - | - | - | Single | ENHANCEMENT MODE | 130W | DRAIN | 11 ns | N-Channel | SWITCHING | 44m Ω @ 16A, 10V | 4V @ 250μA | 1960pF @ 25V | 71nC @ 10V | 35ns | - | ±20V | 35 ns | 33A | 4V | - | 20V | - | 100V | - | 100V | - | 170 ns | - | 4 V | - | 4.826mm | 10.668mm | 9.65mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRF540NSTRLPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRLL024NTRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 55V 3.1A SOT223
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-261-4, TO-261AA | 3 | - | SILICON | IRLL024NTRPBF | 3.1A Ta | 4V 10V | 1 | 1W Ta | 18 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | HEXFET® | - | - | Active | 1 (Unlimited) | 4 | - | EAR99 | 65mOhm | - | AVALANCHE RATED, ULTRA LOW RESISTANCE | 55V | DUAL | GULL WING | - | 3.1A | - | R-PDSO-G4 | - | - | - | 1 | Single | ENHANCEMENT MODE | 2.1W | DRAIN | 7.4 ns | N-Channel | SWITCHING | 65m Ω @ 3.1A, 10V | 2V @ 250μA | 510pF @ 25V | 15.6nC @ 5V | 21ns | - | ±16V | 25 ns | 3.1A | 2V | - | 16V | - | 55V | - | 55V | - | 58 ns | 150°C | 2 V | - | 1.8mm | 6.6802mm | 3.7mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRLL024NTRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDS4435BZAnlielectronics Тип | ON Semiconductor |
ON SEMICONDUCTOR - FDS4435BZ - P CHANNEL MOSFET, -30V, 8.8A, SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 130mg | SILICON | - | 8.8A Ta | 4.5V 10V | 1 | 2.5W Ta | 30 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | 20MOhm | - | - | -30V | DUAL | GULL WING | - | -8.8A | - | - | - | - | - | 1 | Single | ENHANCEMENT MODE | 2.5W | - | 10 ns | P-Channel | SWITCHING | 20m Ω @ 8.8A, 10V | 3V @ 250μA | 1845pF @ 15V | 40nC @ 10V | 13ns | 30V | ±25V | 38 ns | -8.8A | -2.1V | - | 25V | - | -30V | - | - | - | - | 150°C | -2.1 V | 345 pF | 1.75mm | 5mm | 4mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDS4435BZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDN338PAnlielectronics Тип | ON Semiconductor |
ON SEMICONDUCTOR - FDN338P - Power MOSFET, P Channel, 20 V, 1.6 A, 0.088 ohm, SuperSOT, Surface Mount
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 6 days ago) | Tin | Surface Mount | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | SILICON | - | 1.6A Ta | 2.5V 4.5V | 1 | 500mW Ta | 16 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | 115mOhm | - | LOGIC LEVEL COMPATIBLE | -20V | DUAL | GULL WING | - | -1.6A | - | - | - | - | - | 1 | Single | ENHANCEMENT MODE | 500mW | - | 10 ns | P-Channel | SWITCHING | 115m Ω @ 1.6A, 4.5V | 1.5V @ 250μA | 451pF @ 10V | 6.2nC @ 4.5V | 11ns | 20V | ±8V | 11 ns | 1.6A | -800mV | - | 8V | - | -20V | - | - | - | - | 150°C | -800 mV | - | 1.22mm | - | 3.05mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDN338P | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF9Z34NSTRLPBFAnlielectronics Тип | Infineon Technologies |
MOSFET P-CH 55V 19A D2PAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | - | SILICON | - | 19A Tc | 10V | 1 | 3.8W Ta 68W Tc | 30 ns | -55°C~175°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | - | EAR99 | 100mOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY | -55V | - | GULL WING | 260 | -19A | 30 | R-PSSO-G2 | - | - | - | 1 | Single | ENHANCEMENT MODE | 68W | DRAIN | 13 ns | P-Channel | SWITCHING | 100m Ω @ 10A, 10V | 4V @ 250μA | 620pF @ 25V | 35nC @ 10V | 55ns | - | ±20V | 41 ns | -19A | -2V | - | 20V | - | -55V | 68A | 55V | - | 82 ns | 175°C | -4 V | - | 4.83mm | 10.668mm | 9.65mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRF9Z34NSTRLPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR3710ZTRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 100V 42A DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | - | SILICON | - | 42A Tc | 10V | 1 | 140W Tc | 53 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 18MOhm | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 100V | - | GULL WING | 260 | 42A | 30 | R-PSSO-G2 | - | - | - | 1 | Single | ENHANCEMENT MODE | 140W | DRAIN | 14 ns | N-Channel | SWITCHING | 18m Ω @ 33A, 10V | 4V @ 250μA | 2930pF @ 25V | 100nC @ 10V | 43ns | - | ±20V | 42 ns | 42A | 4V | TO-252AA | 20V | - | 100V | 220A | 100V | - | 53 ns | 175°C | 2 V | - | 2.52mm | 6.1976mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRFR3710ZTRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF5210STRLPBFAnlielectronics Тип | Infineon Technologies |
MOSFET P-CH 100V 38A D2PAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | - | SILICON | - | 38A Tc | 10V | 1 | 3.1W Ta 170W Tc | 72 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 60mOhm | - | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | -100V | - | GULL WING | 260 | -40A | 30 | R-PSSO-G2 | - | - | - | 1 | Single | ENHANCEMENT MODE | 3.8W | DRAIN | 14 ns | P-Channel | SWITCHING | 60m Ω @ 38A, 10V | 4V @ 250μA | 2780pF @ 25V | 230nC @ 10V | 63ns | - | ±20V | 55 ns | -40A | -4V | - | 20V | - | -100V | - | 100V | - | 260 ns | 150°C | -4 V | - | 4.83mm | 10.668mm | 9.65mm | No | No SVHC | ROHS3 Compliant | Contains Lead | ||
| IRF5210STRLPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF9530NPBFAnlielectronics Тип | Infineon Technologies |
In a Tube of 50, P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB Infineon IRF9530NPBF
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Through Hole | Through Hole | TO-220-3 | 3 | - | SILICON | - | 14A Tc | 10V | 1 | 79W Tc | 45 ns | -55°C~175°C TJ | Tube | 1998 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 200mOhm | - | AVALANCHE RATED, HIGH RELIABILITY | -100V | - | - | 250 | -14A | 30 | - | - | 2.54mm | - | - | Single | ENHANCEMENT MODE | 79W | DRAIN | 15 ns | P-Channel | SWITCHING | 200m Ω @ 8.4A, 10V | 4V @ 250μA | 760pF @ 25V | 58nC @ 10V | 58ns | 100V | ±20V | 46 ns | -14A | -4V | TO-220AB | 20V | - | -100V | 56A | -100V | 250 mJ | 190 ns | - | -4 V | - | 15.24mm | 10.5156mm | 4.69mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRF9530NPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRLR3110ZTRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 100V 42A DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | - | SILICON | - | 42A Tc | 4.5V 10V | 1 | 140W Tc | 33 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2009 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | - | EAR99 | 14MOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE | - | SINGLE | GULL WING | 260 | - | 30 | R-PSSO-G2 | - | - | SINGLE WITH BUILT-IN DIODE | 1 | - | ENHANCEMENT MODE | 140W | DRAIN | 24 ns | N-Channel | SWITCHING | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 3980pF @ 25V | 48nC @ 4.5V | 110ns | - | ±16V | 48 ns | 42A | - | TO-252AA | 16V | - | 100V | 250A | - | - | - | 175°C | - | - | 2.52mm | 6.7056mm | 6.22mm | No | - | ROHS3 Compliant | Lead Free | ||
| IRLR3110ZTRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRLR2908TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 80V 30A DPAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | - | SILICON | - | 30A Tc | 4.5V 10V | 1 | 120W Tc | 36 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2010 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | - | EAR99 | 28mOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 80V | - | GULL WING | 260 | 30A | 30 | R-PSSO-G2 | - | - | - | 1 | Single | ENHANCEMENT MODE | 120W | DRAIN | 12 ns | N-Channel | SWITCHING | 28m Ω @ 23A, 10V | 2.5V @ 250μA | 1890pF @ 25V | 33nC @ 4.5V | 95ns | - | ±16V | 55 ns | 30A | 1V | TO-252AA | 16V | - | 80V | - | 80V | 250 mJ | - | 175°C | 1 V | - | 2.52mm | 6.7056mm | 6.22mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRLR2908TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF640NSTRLPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N-CH 200V 18A D2PAK
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | - | SILICON | - | 18A Tc | 10V | 1 | 150W Tc | 23 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 150mOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 200V | - | GULL WING | 260 | 18A | 30 | R-PSSO-G2 | - | - | - | 1 | Single | ENHANCEMENT MODE | 150W | DRAIN | 10 ns | N-Channel | SWITCHING | 150m Ω @ 11A, 10V | 4V @ 250μA | 1160pF @ 25V | 67nC @ 10V | 19ns | - | ±20V | 5.5 ns | 18A | 4V | - | 20V | - | 200V | 72A | 200V | 247 mJ | 251 ns | 175°C | 4 V | - | 5.084mm | 10.668mm | 9.65mm | No | No SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||
| IRF640NSTRLPBF |
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