Transistors - IGBTs - Modules Products For Sale - PDF - Discrete Semiconductor Products -Page38

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Number of Terminals	Transistor Element Material	Approvals	Automotive	Collector-Emitter Breakdown Voltage	Collector-Emitter Saturation Voltage	Current-Collector (Ic) (Max)	Dimensions	ECCN (US)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum Collector Emitter Voltage	Maximum Collector-Emitter Voltage (V)	Maximum Continuous Collector Current (A)	Maximum Gate Emitter Voltage	Maximum Gate Emitter Voltage (V)	Maximum Operating Temperature	Maximum Operating Temperature (°C)	Mfr	Military	Minimum Operating Temperature	Minimum Operating Temperature (°C)	Mounting	Number of Elements	Package	Package Body Material	Package Description	Package Height	Package Length	Package Shape	Package Style	Package Type	Package Width	Part Life Cycle Code	PCB changed	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Switching Speed	Turn Off Delay Time	Turn-off Time-Nom (toff)	Turn-on Time-Nom (ton)	Typical Collector Emitter Saturation Voltage (V)	Operating Temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Configuration	Element Configuration	Power Dissipation	Case Connection	Turn On Delay Time	Power - Max	Transistor Application	Halogen Free	Polarity/Channel Type	Input	Collector Emitter Voltage (VCEO)	Max Collector Current	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max)	Reverse Voltage	Input Capacitance	Channel Type	Turn On Time	Vce(on) (Max) @ Vge, Ic	Collector Current-Max (IC)	Continuous Collector Current	Turn Off Time-Nom (toff)	IGBT Type	Collector-Emitter Voltage-Max	NTC Thermistor	Gate-Emitter Voltage-Max	Input Capacitance (Cies) @ Vce	VCEsat-Max	Height (mm)	RoHS Status	Lead Free

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Number of Terminals	Transistor Element Material	Approvals	Automotive	Collector-Emitter Breakdown Voltage	Collector-Emitter Saturation Voltage	Current-Collector (Ic) (Max)	Dimensions	ECCN (US)	Ihs Manufacturer	Manufacturer	Manufacturer Part Number	Maximum Collector Emitter Voltage	Maximum Collector-Emitter Voltage (V)	Maximum Continuous Collector Current (A)	Maximum Gate Emitter Voltage	Maximum Gate Emitter Voltage (V)	Maximum Operating Temperature	Maximum Operating Temperature (°C)	Mfr	Military	Minimum Operating Temperature	Minimum Operating Temperature (°C)	Mounting	Number of Elements	Package	Package Body Material	Package Description	Package Height	Package Length	Package Shape	Package Style	Package Type	Package Width	Part Life Cycle Code	PCB changed	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Switching Speed	Turn Off Delay Time	Turn-off Time-Nom (toff)	Turn-on Time-Nom (ton)	Typical Collector Emitter Saturation Voltage (V)	Operating Temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Configuration	Element Configuration	Power Dissipation	Case Connection	Turn On Delay Time	Power - Max	Transistor Application	Halogen Free	Polarity/Channel Type	Input	Collector Emitter Voltage (VCEO)	Max Collector Current	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max)	Reverse Voltage	Input Capacitance	Channel Type	Turn On Time	Vce(on) (Max) @ Vge, Ic	Collector Current-Max (IC)	Continuous Collector Current	Turn Off Time-Nom (toff)	IGBT Type	Collector-Emitter Voltage-Max	NTC Thermistor	Gate-Emitter Voltage-Max	Input Capacitance (Cies) @ Vce	VCEsat-Max	Height (mm)	RoHS Status	Lead Free
	Mfr. Тип FS450R12OE4PBOSA1 Anlielectronics Тип	Infineon Technologies	Igbt, Module, N-ch, 1.2KV, 450A Rohs Compliant: Yes Сборник данных Сравнение	Min.:1 Mult.:1	26 Weeks	-	Chassis Mount	Module	NO	-	-	-	-	SILICON	-	-	-	-	900A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	6	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	-	-	-	Active	1 (Unlimited)	29	EAR99	-	-	-	-	UL RECOGNIZED	-	UPPER	UNSPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	-	R-XUFM-X29	-	Full Bridge	-	-	ISOLATED	-	20mW	POWER CONTROL	-	N-CHANNEL	Standard	-	-	3mA	1200V	-	-	-	290 ns	2.1V @ 15V, 450A	-	-	680 ns	Trench Field Stop	-	Yes	-	1.55nF @ 25V	-	-	ROHS3 Compliant	-
FS450R12OE4PBOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип DF400R07PE4RB6BOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	Chassis Mount	Module	-	-	AG-ECONO4-1-1	-	-	-	-	-	-	-	450 A	-	-	-	-	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	Active	-	-	Non-Compliant	-	-	-	-	-	-	-	-40°C ~ 150°C (TJ)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Single Chopper	-	-	-	-	1.1 kW	-	Not Halogen Free	-	Standard	-	-	20 μA	650 V	-	-	-	-	-	-	-	-	Trench Field Stop	-	Yes	-	18500 pF @ 25 V	-	-	-	Contains Lead
DF400R07PE4RB6BOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип DD600S17K3B2NOSA1 Anlielectronics Тип	Infineon Technologies	RECTIFIER DIODE MODULE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	Chassis Mount	Module	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-40°C ~ 125°C (TJ)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2 Independent	-	-	-	-	-	-	-	-	Standard	-	-	-	1700 V	-	-	-	-	-	-	-	-	-	-	No	-	-	-	-	-	-
DD600S17K3B2NOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BSM100GB120DN2B2HOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	150	-	-	-	-	-	-	-	-	-	-
BSM100GB120DN2B2HOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FZ2400R12HP4B9NPSA1 Anlielectronics Тип	Infineon Technologies	INSULATED GATE BIPOLAR TRANSISTO Сборник данных Сравнение	Min.:1 Mult.:1	1 Week	-	Chassis Mount	Module	NO	-	AG-IHMB190	-	9	SILICON	-	-	-	1.7	3550 A	-	-	INFINEON TECHNOLOGIES AG	Infineon Technologies AG	FZ2400R12HP4B9NPSA1	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	-	3	Bulk	UNSPECIFIED	MODULE-9	-	-	RECTANGULAR	FLANGE MOUNT	-	-	Active	-	Active	NOT SPECIFIED	5.56	-	No	-	-	-	1440 ns	880 ns	-	-40°C ~ 150°C (TJ)	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	UPPER	UNSPECIFIED	NOT SPECIFIED	unknown	-	-	-	R-XUFM-X9	-	Single Switch	-	13.5	ISOLATED	-	13500 W	POWER CONTROL	-	N-CHANNEL	Standard	-	-	5 mA	1200 V	-	-	-	-	2.05V @ 15V, 2.4kA	3550 A	3.55	-	Trench	1200 V	No	-	150 nF @ 25 V	-	-	-	-
FZ2400R12HP4B9NPSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FS450R12KE4BDSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	Chassis Mount	Module	-	-	AG-ECONOPP-1-1	-	-	-	-	-	-	-	675 A	-	-	-	-	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-40°C ~ 150°C (TJ)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Full Bridge	-	-	-	-	2.25 kW	-	-	-	Standard	-	-	3 mA	1200 V	-	-	-	-	2.1V @ 15V, 450A	-	-	-	Trench Field Stop	-	Yes	-	28000 pF @ 25 V	-	-	-	-
FS450R12KE4BDSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BSM50GP60B2BOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Infineon Technologies	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSM50GP60B2BOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SKM300GB12E4 Anlielectronics Тип	Semikron	Trans IGBT Module N-CH 1200V 422A 7-Pin Case GB Сборник данных Сравнение	Min.:1 Mult.:1	-	-	Screw Mount	-	-	-	-	-	-	-	UL	No	-	-	-	106.4 x 61.4 x 30.5mm	EAR99	-	Semikron	22892077	1200 V	1200	422	20V	±20	+175 °C	175	-	No	-40 °C	-40	Screw	-	-	-	-	30.5	106.4	-	-	SEMITRANS3	61.4	-	7	-	-	-	No	-	Case GB	12kHz	-	-	-	1.85	-	-	-	-	-	-	Active	-	-	-	Dual	-	-	-	-	-	-	-	-	-	-	-	7	-	-	Dual	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	-	-	-	-	-	-	-	-	-	30.5 mm	RoHS Compliant	-
SKM300GB12E4 Semikron RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FD200R12PT4B6BOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE VCES 1200V 200A Сборник данных Сравнение	Min.:1 Mult.:1	24 Weeks	-	Chassis Mount	Module	-	-	-	-	-	-	-	-	-	-	300A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	-	-	-	Active	1 (Unlimited)	-	EAR99	-	-	-	-	-	-	-	-	NOT SPECIFIED	-	NOT SPECIFIED	-	-	-	-	Three Phase Inverter	-	-	-	-	1100W	-	Not Halogen Free	-	Standard	-	-	15μA	1200V	-	-	-	-	2.1V @ 15V, 200A	-	-	-	Trench Field Stop	-	Yes	-	12.5nF @ 25V	-	-	Non-RoHS Compliant	Contains Lead
FD200R12PT4B6BOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип F3L300R12ME4_B22 Anlielectronics Тип	Infineon	Trans IGBT Module N-CH 1.2KV 450A 11-pin ECONOD-3 Сборник данных Сравнение	Min.:1 Mult.:1	-	Screw	-	Module	-	11	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	no	-	-	11	EAR99	-	-	150°C	-40°C	-	-	UPPER	UNSPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	11	-	-	-	Dual	-	ISOLATED	-	-	POWER CONTROL	Not Halogen Free	N-CHANNEL	-	1.2kV	450A	-	-	-	-	-	290 ns	-	-	-	650 ns	-	-	-	-	-	-	-	RoHS Compliant	Contains Lead
F3L300R12ME4_B22 Infineon RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FP06R12W1T4B3BOMA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE VCES 1200V 6A Сборник данных Сравнение	Min.:1 Mult.:1	16 Weeks	-	Chassis Mount	Module	-	-	-	-	-	-	-	-	-	-	12A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	-	-	-	Active	Not Applicable	-	EAR99	-	-	-	-	-	-	-	-	NOT SPECIFIED	-	NOT SPECIFIED	-	-	-	-	Three Phase Inverter	-	-	-	-	94W	-	Not Halogen Free	-	Standard	-	-	1mA	1200V	-	-	-	-	2.25V @ 15V, 6A	-	-	-	Trench Field Stop	-	Yes	-	600pF @ 25V	-	-	RoHS Compliant	Contains Lead
FP06R12W1T4B3BOMA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IXBN75N170A Anlielectronics Тип	IXYS	Trans IGBT Chip N-CH 1.7KV 75A 4-Pin SOT-227B Сборник данных Сравнение	Min.:1 Mult.:1	30 Weeks	Chassis Mount, Screw	Chassis Mount	SOT-227-4, miniBLOC	-	4	-	38.000013g	-	SILICON	-	-	1.7kV	4.95V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-55°C~150°C TJ	-	2002	BIMOSFET™	-	yes	Active	1 (Unlimited)	4	-	-	Nickel (Ni)	-	-	UL RECOGNIZED	625W	UPPER	UNSPECIFIED	-	-	-	IXB*75N170	4	-	-	Single	-	625W	ISOLATED	-	-	POWER CONTROL	-	N-CHANNEL	Standard	1.7kV	75A	50μA	1700V	-	7.4nF	-	65 ns	6V @ 15V, 42A	-	-	595 ns	-	-	No	-	7.4nF @ 25V	-	-	ROHS3 Compliant	-
IXBN75N170A IXYS RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MWI50-12A7T Anlielectronics Тип	IXYS	MOD IGBT SIXPACK RBSOA 1200V E2 Сборник данных Сравнение	Min.:1 Mult.:1	20 Weeks	Chassis Mount	Chassis Mount	E2	-	2	-	-	-	SILICON	-	-	1.2kV	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	6	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	500 ns	-	-	-	-40°C~150°C TJ	-	2007	-	e3	yes	Active	1 (Unlimited)	13	-	-	Matte Tin (Sn) - with Nickel (Ni) barrier	-	-	UL RECOGNIZED	350W	UPPER	UNSPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	MWI	19	R-XUFM-X13	Not Qualified	Three Phase Inverter	-	-	ISOLATED	100 ns	350W	POWER CONTROL	-	N-CHANNEL	Standard	2.7V	85A	4mA	1200V	-	3.3nF	-	170 ns	2.7V @ 15V, 50A	-	-	570 ns	NPT	-	Yes	-	3.3nF @ 25V	-	-	ROHS3 Compliant	Lead Free
MWI50-12A7T IXYS RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FZ1600R17HP4B21BOSA2 Anlielectronics Тип	Infineon Technologies	IGBT MODULE 1700V 1600A Сборник данных Сравнение	Min.:1 Mult.:1	24 Weeks	-	Chassis Mount	Module	NO	-	-	-	-	SILICON	-	-	-	-	1600A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	-	-	-	Active	1 (Unlimited)	7	EAR99	-	-	-	-	UL APPROVED	-	UPPER	UNSPECIFIED	-	-	-	-	-	R-PUFM-X7	-	Half Bridge	-	-	ISOLATED	-	10500W	POWER CONTROL	Not Halogen Free	N-CHANNEL	Standard	-	-	5mA	1700V	-	-	-	690 ns	2.25V @ 15V, 1600A	-	-	1710 ns	Trench Field Stop	-	No	-	130nF @ 25V	-	-	ROHS3 Compliant	Contains Lead
FZ1600R17HP4B21BOSA2 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FZ1200R12HE4PHPSA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULE 1200V 1825A Сборник данных Сравнение	Min.:1 Mult.:1	52 Weeks	-	Chassis Mount	Module	NO	-	-	-	-	SILICON	-	-	-	-	1825A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	-	-	-	Active	1 (Unlimited)	7	EAR99	-	-	-	-	-	-	UPPER	UNSPECIFIED	-	-	-	-	-	R-PUFM-X7	-	Single Switch	-	-	ISOLATED	-	-	POWER CONTROL	-	N-CHANNEL	Standard	-	-	5mA	1200V	-	-	-	660 ns	2.1V @ 15V, 1200A	-	-	1130 ns	Trench Field Stop	-	No	-	74nF @ 25V	-	-	ROHS3 Compliant	-
FZ1200R12HE4PHPSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IXGN72N60C3H1 Anlielectronics Тип	IXYS	IGBT MOD 600V 78A 360W SOT227B Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	Chassis Mount, Screw	Chassis Mount	SOT-227-4, miniBLOC	-	4	-	-	-	SILICON	-	-	600V	2.1V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	77 ns	-	-	-	-55°C~150°C TJ	-	2009	GenX3™	-	yes	Active	1 (Unlimited)	4	-	-	Nickel (Ni)	-	-	UL RECOGNIZED, LOW CONDUCTION LOSS	360W	UPPER	UNSPECIFIED	-	-	-	IXG*72N60	4	-	-	Single	-	360W	ISOLATED	27 ns	-	POWER CONTROL	-	N-CHANNEL	Standard	600V	78A	250μA	-	-	4.78nF	-	62 ns	2.5V @ 15V, 50A	-	-	244 ns	PT	-	No	20V	4.78nF @ 25V	2.5 V	-	ROHS3 Compliant	Lead Free
IXGN72N60C3H1 IXYS RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип DF200R12PT4B6BOSA1 Anlielectronics Тип	Infineon Technologies	IGBT MOD 1200V 300A 1100W Сборник данных Сравнение	Min.:1 Mult.:1	16 Weeks	-	Chassis Mount	Module	-	-	-	-	-	-	-	-	-	-	300A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~150°C	-	2002	-	-	-	Active	1 (Unlimited)	-	EAR99	-	-	-	-	-	-	-	-	NOT SPECIFIED	-	NOT SPECIFIED	-	-	-	-	Three Phase Inverter	-	-	-	-	1100W	-	Not Halogen Free	-	Standard	-	-	15μA	1200V	-	-	-	-	2.1V @ 15V, 200A	-	-	-	Trench Field Stop	-	Yes	-	12.5nF @ 25V	-	-	Non-RoHS Compliant	Contains Lead
DF200R12PT4B6BOSA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MIXA10WB1200TML Anlielectronics Тип	IXYS	IGBT Modules Converter-Brake Inverter Module Сборник данных Сравнение	Min.:1 Mult.:1	-	Chassis Mount	Chassis Mount	E1	-	-	-	-	-	SILICON	-	-	1.2kV	1.2kV	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	7	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~125°C TJ	Bulk	2011	-	-	yes	Active	1 (Unlimited)	25	-	-	-	-	-	UL RECOGNIZED	63W	UPPER	UNSPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	25	R-XUFM-X25	Not Qualified	Three Phase Inverter with Brake	-	63W	ISOLATED	-	-	POWER CONTROL	-	N-CHANNEL	Three Phase Bridge Rectifier	2.1V	17A	100μA	1200V	-	-	-	110 ns	2.1V @ 15V, 9A	-	-	350 ns	PT	-	Yes	20V	-	-	-	ROHS3 Compliant	-
MIXA10WB1200TML IXYS RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MUBW15-06A7 Anlielectronics Тип	IXYS	Trans IGBT Module N-CH 600V 25A 24-Pin E2-Pack Сборник данных Сравнение	Min.:1 Mult.:1	32 Weeks	Chassis Mount, Screw	Chassis Mount	E2	-	2	-	-	-	SILICON	-	-	600V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	7	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-40°C~125°C TJ	Bulk	2001	-	e3	yes	Active	1 (Unlimited)	24	-	-	Matte Tin (Sn) - with Nickel (Ni) barrier	-	-	LOW SWITCHING LOSS, LOW SATURATION VOLTAGE	100W	UPPER	UNSPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	MUBW	-	-	Not Qualified	Three Phase Inverter with Brake	-	-	ISOLATED	-	100W	POWER CONTROL	-	N-CHANNEL	Three Phase Bridge Rectifier	2.3V	25A	600μA	-	1.6kV	800pF	-	80 ns	2.3V @ 15V, 15A	-	-	260 ns	NPT	-	Yes	-	0.8nF @ 25V	-	-	ROHS3 Compliant	-
MUBW15-06A7 IXYS RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип FS400R07A1E3S7BOMA1 Anlielectronics Тип	Infineon Technologies	IGBT MODULES Сборник данных Сравнение	Min.:1 Mult.:1	26 Weeks	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Active	1 (Unlimited)	-	-	-	-	-	-	-	-	-	-	NOT SPECIFIED	-	NOT SPECIFIED	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
FS400R07A1E3S7BOMA1 Infineon Technologies RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Discrete Semiconductor Products

Transistors - IGBTs - Modules definition: An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as ... Transistors - IGBTs - Modules Product Listing: FS450R12OE4PBOSA1,DF400R07PE4RB6BOSA1,DD600S17K3B2NOSA1,BSM100GB120DN2B2HOSA1,FZ2400R12HP4B9NPSA1.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Modules has 5133 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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