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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Supplier Device Package | Brand | Collector- Emitter Voltage VCEO Max | Current-Collector (Ic) (Max) | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Manufacturer | Manufacturer Part Number | Maximum Collector Emitter Voltage | Maximum Gate Emitter Voltage | Maximum Operating Temperature | Mfr | Minimum Operating Temperature | Mounting Styles | Package | Package Description | Part # Aliases | Part Life Cycle Code | Pd - Power Dissipation | Product Status | Risk Rank | RoHS | Rohs Code | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Operating Temperature | Packaging | Series | Type | Subcategory | Technology | Reach Compliance Code | Configuration | Power Dissipation | Output Current | Power - Max | Input | Product Type | Current - Collector Cutoff (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce(on) (Max) @ Vge, Ic | Continuous Collector Current | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Product | Vf - Forward Voltage | Product Category | Height (mm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипNXH240B120H3Q1PGAnlielectronics Тип | onsemi |
PIM Q1 3 CHANNEL IGBT+SIC BOOST
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | 32-PIM (71x37.4) | onsemi | - | 68 A | 21 | - | onsemi | - | - | - | - | onsemi | - | - | Tray | - | - | - | - | Active | - | - | - | - | - | -40°C ~ 150°C (TJ) | - | - | - | - | - | - | Triple, Dual - Common Source | 158 | - | 158 W | Standard | - | 400 μA | 1200 V | 2V @ 15V, 80A | 68 | Trench Field Stop | Yes | 18.151 nF @ 20 V | - | - | onsemi | - | ||
| NXH240B120H3Q1PG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFP100R12N3T4PB81BPSA1Anlielectronics Тип | Infineon Technologies |
LOW POWER ECONO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Infineon Technologies | - | - | 6 | - | Infineon | - | - | - | - | Infineon Technologies | - | - | Tape & Reel (TR) | - | FP100R12N3T4P_B81 SP005351142 | - | - | Active | - | - | - | - | - | - | Tray | - | - | IGBTs | - | - | - | - | - | - | - | IGBT Modules | - | - | - | - | - | - | - | - | - | IGBT Modules | - | ||
| FP100R12N3T4PB81BPSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFS150R12N3T4PB81BPSA1Anlielectronics Тип | Infineon Technologies |
LOW POWER ECONO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Infineon Technologies | - | - | 6 | - | Infineon | - | - | - | - | Infineon Technologies | - | - | Tape & Reel (TR) | - | FS150R12N3T4P_B81 SP005428911 | - | - | Active | - | - | - | - | - | - | Tray | - | - | IGBTs | - | - | - | - | - | - | - | IGBT Modules | - | - | - | - | - | - | - | - | - | IGBT Modules | - | ||
| FS150R12N3T4PB81BPSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFF750R17ME7DB11BPSA1Anlielectronics Тип | Infineon Technologies |
MEDIUM POWER ECONO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | - | Infineon Technologies | 1700 V | 750 A | 10 | - | Infineon | - | 1700 V | ±20V | + 175 C | Infineon Technologies | - 40 C | - | Tray | - | FF750R17ME7D_B11 SP005569131 | - | - | Active | - | - | - | - | - | -40°C ~ 175°C (TJ) | Tray | - | - | IGBTs | - | - | Half Bridge Inverter | 20mW | - | 20 mW | Standard | IGBT Modules | 5 mA | 1700 V | 1.85V @ 15V, 750A | 750A | Trench Field Stop | Yes | 78.1 nF @ 25 V | IGBT Silicon Modules | - | IGBT Modules | - | ||
| FF750R17ME7DB11BPSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFP75R12N2T7PB11BPSA1Anlielectronics Тип | Infineon Technologies |
LOW POWER ECONO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | AG-ECONO2B | Infineon Technologies | 1200 V | 75 A | 10 | - | Infineon | - | 1200 V | 20V | + 175 C | Infineon Technologies | - 40 C | PCB Mount | Tray | - | FP75R12N2T7P_B11 SP005595812 | - | - | Active | - | - | - | - | - | -40°C ~ 175°C (TJ) | Tray | - | - | IGBTs | Si | - | Three Phase Inverter | - | - | 20 mW | Three Phase Bridge Rectifier | IGBT Modules | 14 μA | 1200 V | 1.8V @ 15V, 75A | 75A | Trench Field Stop | Yes | 15.1 nF @ 25 V | IGBT Silicon Modules | - | IGBT Modules | - | ||
| FP75R12N2T7PB11BPSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFMM7G30US60NAnlielectronics Тип | Fairchild Semiconductor |
INSULATED GATE BIPOLAR TRANSISTO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | Module | - | - | - | 30 A | - | - | - | - | - | - | - | Fairchild Semiconductor | - | - | Bulk | - | - | - | - | Obsolete | - | - | - | - | - | -40°C ~ 150°C (TJ) | - | - | - | - | - | - | Three Phase Inverter with Brake | - | - | 104 W | Three Phase Bridge Rectifier | - | 250 μA | 600 V | 2.7V @ 15V, 30A | - | - | Yes | 2.1 nF @ 30 V | - | - | - | - | ||
| FMM7G30US60N | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNXH200T120H3Q2F2SGAnlielectronics Тип | onsemi |
80KW GEN-II Q2PACK-200A MODULE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | 56-PIM/Q2PACK (93x47) | onsemi | - | 330 A | 12 | - | onsemi | - | - | - | - | onsemi | - | - | Tray | - | - | - | - | Active | - | - | - | - | - | -40°C ~ 175°C (TJ) | - | - | - | - | - | - | Half Bridge | 679 | - | 679 W | Standard | - | 500 μA | 1200 V | 2.3V @ 15V, 200A | 330 | Trench Field Stop | No | 35.615 nF @ 25 V | - | - | onsemi | - | ||
| NXH200T120H3Q2F2SG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFP50R12N2T7PB11BPSA1Anlielectronics Тип | Infineon Technologies |
LOW POWER ECONO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | AG-ECONO2B | Infineon Technologies | 1200 V | 50 A | 10 | - | Infineon | - | 1200 V | 20V | + 175 C | Infineon Technologies | - 40 C | PCB Mount | Tray | - | FP50R12N2T7P_B11 SP005595806 | - | - | Active | - | - | - | - | - | -40°C ~ 175°C (TJ) | Tray | - | - | IGBTs | Si | - | Three Phase Inverter with Brake | - | - | 20 mW | Three Phase Bridge Rectifier | IGBT Modules | 10 μA | 1200 V | 1.8V @ 15V, 50A | 50A | Trench Field Stop | Yes | 11.1 nF @ 25 V | IGBT Silicon Modules | - | IGBT Modules | - | ||
| FP50R12N2T7PB11BPSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFMM7G20US60NAnlielectronics Тип | Fairchild Semiconductor |
INSULATED GATE BIPOLAR TRANSISTO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | Module | - | - | - | 20 A | - | - | - | - | - | - | - | Fairchild Semiconductor | - | - | Bulk | - | - | - | - | Obsolete | - | - | - | - | - | -40°C ~ 150°C (TJ) | - | - | - | - | - | - | Three Phase Inverter with Brake | - | - | 89 W | Three Phase Bridge Rectifier | - | 250 μA | 600 V | 2.7V @ 15V, 20A | - | - | Yes | 1.277 nF @ 30 V | - | - | - | - | ||
| FMM7G20US60N | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDDB6U134N16RRB80BPSA1Anlielectronics Тип | Infineon Technologies |
LOW POWER ECONO AG-ECONO2B-8231
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Infineon Technologies | - | - | 15 | - | Infineon | - | - | - | + 150 C | Infineon Technologies | - 40 C | Chassis Mount | Tray | - | DDB6U134N16RR_B80 SP005569270 | - | 500 W | Active | - | - | - | - | - | - | Tray | * | - | Discrete Semiconductor Modules | - | - | Single | - | 134 A | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | IGBT Silicon Modules | 1.35 V at 100 A | Discrete Semiconductor Modules | - | ||
| DDB6U134N16RRB80BPSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипVS-ENV020M120MAnlielectronics Тип | Vishay General Semiconductor - Diodes Division |
POWER MODULE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | EMIPAK | - | Vishay Semiconductors | - | - | 100 | - | Vishay | - | - | - | + 150 C | Vishay General Semiconductor - Diodes Division | - | Press Fit | Box | - | - | - | 87 W | Active | - | Details | - | N-Channel | 1200 V | - | Bulk | * | PressFit Power Module | Discrete Semiconductor Modules | - | - | 1-Phase Bridge | - | 33 A | - | - | Discrete Semiconductor Modules | - | - | - | - | - | - | - | Diode Power Modules | 1.29 V | Discrete Semiconductor Modules | - | ||
| VS-ENV020M120M Vishay General Semiconductor - Diodes Division
RoHS :
Инкапсуляция :
-
Есть складские запасы :
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1 :
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| | Mfr. ТипCM200TU-12HAnlielectronics Тип | Mitsubishi |
MITSUBISHI power module
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| CM200TU-12H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFMM6G30US60Anlielectronics Тип | Fairchild Semiconductor |
INSULATED GATE BIPOLAR TRANSISTO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | Module | - | - | - | 30 A | - | - | - | - | - | - | - | Fairchild Semiconductor | - | - | Bulk | - | - | - | - | Obsolete | - | - | - | - | - | -40°C ~ 150°C (TJ) | - | - | - | - | - | - | Three Phase Inverter with Brake | - | - | 104 W | Three Phase Bridge Rectifier | - | 250 μA | 600 V | 2.7V @ 15V, 30A | - | - | Yes | 2.1 nF @ 30 V | - | - | - | - | ||
| FMM6G30US60 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCM400HA-34HAnlielectronics Тип | Mitsubishi |
Igbt Power Transistor Module
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| CM400HA-34H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCM100DY-24AAnlielectronics Тип | Mitsubishi Materials U.S.A |
IGBT Modules IGBT MODULE A-SERIES DUAL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 1200 V | - | 10 | - | - | CM100DY-24A | - | 20 V | + 150 C | - | - 40 C | Screw | - | - | - | - | 672 W | - | - | Details | - | - | - | - | - | - | - | - | - | - | Dual | - | - | - | - | - | - | - | - | - | - | - | - | IGBT Silicon Modules | - | - | 29 mm | ||
| CM100DY-24A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCM600DY-13TAnlielectronics Тип | Mitsubishi Materials U.S.A |
IGBT Modules
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 650 V | - | 10 | MITSUBISHI ELECTRIC CORP | - | CM600DY-13T | - | 20 V | + 150 C | - | - 40 C | Screw | - | , | - | Active | 4165 W | - | 2.12 | Details | Yes | - | - | - | - | - | Dual | - | - | unknown | Dual | - | - | - | - | - | - | - | - | - | - | - | - | IGBT Silicon Modules | - | - | 30 mm | ||
| CM600DY-13T | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCM150DY-12NFAnlielectronics Тип | Mitsubishi Materials U.S.A |
IGBT Modules IGBT MODULE NF-SERIES DUAL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 600 V | - | 10 | - | - | CM150DY-12NF | - | 20 V | + 150 C | - | - 40 C | Screw | - | - | - | - | 590 W | - | - | Details | - | - | - | - | - | - | - | - | - | - | Dual | - | - | - | - | - | - | - | - | - | - | - | - | IGBT Silicon Modules | - | - | 29 mm | ||
| CM150DY-12NF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPSS35MC1FTAnlielectronics Тип | Mitsubishi Materials U.S.A |
IGBT Modules
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 1200 V | - | 10 | - | - | PSS35MC1FT | - | - | + 110 C | - | - 30 C | Screw Mount | - | - | - | - | - | - | - | Details | - | - | - | - | - | - | - | - | - | - | 6-Pack | - | - | - | - | - | - | - | - | - | - | - | - | IGBT Silicon Modules | - | - | - | ||
| PSS35MC1FT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPS22A78-EAnlielectronics Тип | Mitsubishi Materials U.S.A |
IGBT Modules DIPIPM DUAL-IN-LINE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 1200 V | - | 10 | - | - | PS22A78-E | - | - | + 150 C | - | - 20 C | - | - | - | - | - | 129.9 W | - | - | Details | - | - | - | - | - | - | - | - | - | - | 6-Pack | - | - | - | - | - | - | - | - | - | - | - | - | IGBT Silicon Modules | - | - | - | ||
| PS22A78-E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPSS20S71F6Anlielectronics Тип | Mitsubishi Materials U.S.A |
IGBT Modules
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 600 V | - | 10 | - | - | PSS20S71F6 | - | - | + 100 C | - | - 20 C | - | - | - | - | - | 76.9 W | - | - | Details | - | - | - | - | - | - | - | - | - | - | 6-Pack | - | - | - | - | - | - | - | - | - | - | - | - | IGBT Silicon Modules | - | - | - | ||
| PSS20S71F6 |
Индекс :
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