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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Supplier Device Package | Base Product Number | Brand | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Continuous Collector Current Ic Max | Continuous Drain Current Id | Current-Collector (Ic) (Max) | Factory Pack QuantityFactory Pack Quantity | Manufacturer | Maximum Collector Emitter Voltage | Maximum Gate Emitter Voltage | Maximum Operating Temperature | Maximum Output Current | Mfr | Minimum Operating Temperature | Moisture Sensitive | Mounting Styles | Package | Package Type | Part # Aliases | Pd - Power Dissipation | Product Status | RoHS | Tradename | Operating Temperature | Packaging | Series | Subcategory | Technology | Configuration | Output Configuration | Power Dissipation | Power - Max | Input | Product Type | Current - Collector Cutoff (Max) | Voltage - Collector Emitter Breakdown (Max) | Channel Type | Vce(on) (Max) @ Vge, Ic | Continuous Collector Current | IGBT Type | Motor Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Product | Product Category |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипFP75R12N2T7B11BPSA2Anlielectronics Тип | Infineon Technologies |
LOW POWER ECONO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | AG-ECONO2B | FP75R12 | Infineon Technologies | 1200 V | 1.55 V | 75 A | - | - | 75 A | 15 | Infineon | - | - | + 175 C | - | Infineon Technologies | - 40 C | - | - | Tray | - | FP75R12N2T7_B11 SP005597717 | - | Active | Details | - | -40°C ~ 175°C (TJ) | Tray | - | IGBTs | - | Three Phase Inverter | - | - | 20 mW | Three Phase Bridge Rectifier | IGBT Modules | 14 μA | 1200 V | - | 1.55V @ 15V, 75A | - | Trench Field Stop | - | Yes | 15.1 nF @ 25 V | IGBT Silicon Modules | IGBT Modules | ||
| FP75R12N2T7B11BPSA2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFP35R12N2T7BPSA2Anlielectronics Тип | Infineon Technologies |
LOW POWER ECONO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | AG-ECONO2B | FP35R12 | Infineon Technologies | 1200 V | 1.6 V | 35 A | - | - | 35 A | 15 | Infineon | - | - | + 175 C | - | Infineon Technologies | - 40 C | - | - | Tray | - | FP35R12N2T7 SP005597311 | - | Active | Details | - | -40°C ~ 175°C (TJ) | Tray | - | IGBTs | - | Three Phase Inverter | - | - | 20 mW | Three Phase Bridge Rectifier | IGBT Modules | 7 μA | 1200 V | - | 1.6V @ 15V, 35A | - | Trench Field Stop | - | Yes | 6.62 nF @ 25 V | IGBT Silicon Modules | IGBT Modules | ||
| FP35R12N2T7BPSA2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFS200R10W3S7B11BPSA1Anlielectronics Тип | Infineon Technologies |
LOW POWER EASY
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Infineon Technologies | - | - | - | Tray | - | - | - | Active | - | - | - | - | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FS200R10W3S7B11BPSA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFS150R12N2T7BPSA2Anlielectronics Тип | Infineon Technologies |
LOW POWER ECONO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | AG-ECONO2 | FS150R12 | Infineon Technologies | 1200 V | 1.55 V | 150 A | - | - | 150 A | 15 | Infineon | - | - | + 175 C | - | Infineon Technologies | - 40 C | - | - | Tray | - | FS150R12N2T7 SP005422562 | - | Active | Details | - | -40°C ~ 175°C (TJ) | Tray | - | IGBTs | - | Three Phase Inverter | - | - | 20 mW | Standard | IGBT Modules | 1.2 μA | 1200 V | - | 1.8V @ 15V, 150A | - | Trench Field Stop | - | Yes | 30.1 nF @ 25 V | IGBT Silicon Modules | IGBT Modules | ||
| FS150R12N2T7BPSA2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFS3L25R12W2H3PB11BPSA1Anlielectronics Тип | Infineon Technologies |
LOW POWER EASY
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Infineon Technologies | - | - | - | - | - | - | 18 | Infineon | - | - | - | - | Infineon Technologies | - | - | - | Tray | - | FS3L25R12W2H3P_B11 SP001691300 | - | Active | Details | - | - | Tray | * | IGBTs | - | - | - | - | - | - | IGBT Modules | - | - | - | - | - | - | - | - | - | - | IGBT Modules | ||
| FS3L25R12W2H3PB11BPSA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXYN110N120C4Anlielectronics Тип | IXYS |
IGBT 1200V 110A GEN4 XPT SOT227B
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | - | IXYS | 1.2 kV | 2.4 V | 220 A | 220 A | - | 220 A | 10 | IXYS | - | - 20 V, + 20 V | + 175 C | - | IXYS | - 55 C | - | Screw Mounts | Tube | - | - | 830 W | Active | Details | XPT | -55°C ~ 175°C (TJ) | Tube | - | IGBTs | Si | Single | - | - | 830 W | Standard | IGBT Transistors | 50 μA | 1200 V | - | 2.4V @ 15V, 110A | - | - | - | No | 5.42 nF @ 25 V | - | IGBT Transistors | ||
| IXYN110N120C4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипP2000DL45X168HPSA1Anlielectronics Тип | Infineon Technologies |
PRESS PACK IGBT
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | TO-200AF | BG-P16826K-1 | P2000D | Infineon Technologies | 4500 V | 2.25V | 2000 A | - | - | 2000 A | 1 | Infineon | - | 20 V | + 150 C | - | Infineon Technologies | - 40 C | - | Cable Mount | Tray | - | P2000DL45X168 SP005729091 | - | Active | Details | - | -40°C ~ 150°C (TJ) | Tray | - | IGBTs | - | Single | - | - | - | Standard | IGBT Modules | 200 μA | 4500 V | - | 2.5V @ 15V, 2000A | 2kA | Trench | - | No | 420 nF @ 25 V | IGBT Silicon Modules | IGBT Modules | ||
| P2000DL45X168HPSA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFF600R12ME4WB73BPSA1Anlielectronics Тип | Infineon Technologies |
MEDIUM POWER ECONO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | AG-ECONOD | FF600R12 | Infineon Technologies | 1200 V | 1.75V | 995 A | - | - | 600 A | 6 | Infineon | 1200 V | 20V | + 150 C | - | Infineon Technologies | - 40 C | - | PCB Mount | Tray | - | FF600R12ME4W_B73 SP005589477 | 4050 W | Active | - | - | -40°C ~ 150°C (TJ) | Tray | - | IGBTs | - | 2 Independent | - | - | 20 mW | Standard | IGBT Modules | 3 mA | 1200 V | - | 2.1V @ 15V, 600A | 600A | Trench Field Stop | - | Yes | 37 nF @ 25 V | IGBT Silicon Modules | IGBT Modules | ||
| FF600R12ME4WB73BPSA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIM241M6T2JAKMA1Anlielectronics Тип | Infineon Technologies |
CIPOS MICRO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | - | 23-DIP | IM241M6 | Infineon Technologies | 600 V | 1.13 V | 4 A | - | - | - | 240 | Infineon | 1.58 V | - | + 125 C | 4A | Infineon Technologies | - 40 C | - | - | Tube | - | IM241-M6T2J SP005426941 | 13 W | Active | - | - | -40°C ~ 150°C (TJ) | Tube | - | IGBTs | - | Three Phase Inverter | Half Bridge | - | 13 W | Standard | IGBT Modules | - | 600 V | - | 1.58V @ 15V, 1A | - | - | 3-Phase Motor | Yes | - | IGBT Silicon Modules | IGBT Modules | ||
| IM241M6T2JAKMA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFF900R12ME7WB11BPSA1Anlielectronics Тип | Infineon Technologies |
MEDIUM POWER ECONO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Infineon Technologies | 1200 V | 1.5V | 890 A | - | - | - | 6 | Infineon | 1200 V | 20V | + 175 C | - | Infineon Technologies | - 40 C | - | - | Tray | - | FF900R12ME7W_B11 SP005589481 | - | Active | - | - | - | Tray | * | IGBTs | - | Dual | - | - | - | - | IGBT Modules | - | - | - | - | 890A | - | - | - | - | IGBT Silicon Modules | IGBT Modules | ||
| FF900R12ME7WB11BPSA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFS13MR12W2M1HB70BPSA1Anlielectronics Тип | Infineon Technologies |
LOW POWER EASY
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Infineon Technologies | - | - | - | - | - | - | 15 | Infineon | - | - | - | - | Infineon Technologies | - | - | - | Tape & Reel (TR) | - | FS13MR12W2M1H_B70 SP005561073 | - | Active | - | - | - | Tray | - | IGBTs | - | Three Phase Inverter | - | - | - | Standard | IGBT Modules | - | 1200 V | - | - | - | - | - | No | - | - | IGBT Modules | ||
| FS13MR12W2M1HB70BPSA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипF3L75R12W1H3BPSA1Anlielectronics Тип | Infineon Technologies |
LOW POWER EASY AG-EASY1B-311
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | Infineon Technologies | - | - | - | - | - | - | 24 | Infineon | - | - | - | - | Infineon Technologies | - | - | - | Tray | - | F3L75R12W1H3 SP005728116 | - | Active | Details | - | - | Tray | - | IGBTs | - | - | - | - | - | - | IGBT Modules | - | - | - | - | - | - | - | - | - | - | IGBT Modules | ||
| F3L75R12W1H3BPSA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNXH100B120H3Q0PGAnlielectronics Тип | onsemi |
PIM 60-80KW Q0BOOST-L57 1200V, 1
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | 22-PIM (55x32.5) | - | onsemi | - | 1.77V | - | - | - | 61 A | 24 | onsemi | 1200 V | ±20V | - | - | onsemi | - | - | - | Tray | Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins | - | - | Active | - | - | -40°C ~ 150°C (TJ) | Tray | - | Discrete Semiconductor Modules | - | 2 Independent | - | 186W | 186 W | Standard | Discrete Semiconductor Modules | 200 μA | 1200 V | - | 2.3V @ 15V, 50A | 61A | Trench Field Stop | - | No | 9.075 nF @ 20 V | - | Discrete Semiconductor Modules | ||
| NXH100B120H3Q0PG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNXH40B120MNQ1SNGAnlielectronics Тип | onsemi |
30KW Q1BOOST FULL SIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | 32-PIM (71x37.4) | - | onsemi | - | - | - | - | 44A | - | 21 | onsemi | - | - | + 150 C | - | onsemi | - 40 C | - | - | Tray | Q1 3-Channel BOOST - Case 180BQ Solder Pins (Pb Free) | - | 156 W | Active | - | - | -40°C ~ 175°C (TJ) | - | - | Discrete Semiconductor Modules | - | Triple, Dual - Common Source | - | 156W | 156 W | Standard | Discrete Semiconductor Modules | - | - | Three N Channel | - | - | - | - | Yes | 3.227 nF @ 800 V | IGBT Silicon Carbide Modules | Discrete Semiconductor Modules | ||
| NXH40B120MNQ1SNG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипVS-GT75YF120UTAnlielectronics Тип | Vishay General Semiconductor - Diodes Division |
ECONO - 4 PACK IGBT
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | - | - | Vishay Semiconductors | 1.2 kV | 2.2 V | 118 A | - | - | 118 A | 12 | Vishay | - | - 20 V, + 20 V | + 150 C | - | Vishay General Semiconductor - Diodes Division | - 40 C | - | Screw Mounts | Box | - | - | 431 W | Active | Details | - | -40°C ~ 150°C (TJ) | Bulk | - | IGBTs | Si | Full Bridge | - | - | 431 W | Standard | IGBT Transistors | 100 μA | 1200 V | - | 2.6V @ 15V, 75A | - | Trench Field Stop | - | Yes | - | - | IGBT Transistors | ||
| VS-GT75YF120UT Vishay General Semiconductor - Diodes Division
RoHS :
Инкапсуляция :
-
Есть складские запасы :
-
1 :
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| | Mfr. ТипIM241L6S1BAUMA1Anlielectronics Тип | Infineon Technologies |
CIPOS MICRO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | 23-PowerSMD Module, Gull Wing | 23-SOP | IM241L6 | Infineon Technologies | 600 V | 1.15 V | 6 A | - | - | - | 500 | Infineon | 1.62 V | - | + 125 C | 6A | Infineon Technologies | - 40 C | Yes | - | - | - | IM241-L6S1B SP005426927 | 15 W | Active | - | - | -40°C ~ 150°C (TJ) | Cut Tape | - | IGBTs | - | Three Phase Inverter | Half Bridge | - | 15 W | Standard | IGBT Modules | - | 600 V | - | 1.62V @ 15V, 2A | - | - | 3-Phase Motor | Yes | - | IGBT Silicon Modules | IGBT Modules | ||
| IM241L6S1BAUMA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMSCGLQ100A65TGAnlielectronics Тип | Microchip Technology |
PM-IGBT-SP4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | MSCGLQ | Microchip Technology | - | - | - | - | - | - | 1 | Microchip | - | - | - | - | Microchip Technology | - | - | - | Bulk | - | - | - | Active | Details | - | - | - | * | IGBTs | - | - | - | - | - | - | IGBT Modules | - | - | - | - | - | - | - | - | - | - | IGBT Modules | ||
| MSCGLQ100A65TG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFMM6G30US60Anlielectronics Тип | Fairchild Semiconductor |
INSULATED GATE BIPOLAR TRANSISTO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Through Hole | Module | - | - | - | - | - | - | - | - | 30 A | - | - | - | - | - | - | Fairchild Semiconductor | - | - | - | Bulk | - | - | - | Obsolete | - | - | -40°C ~ 150°C (TJ) | - | - | - | - | Three Phase Inverter with Brake | - | - | 104 W | Three Phase Bridge Rectifier | - | 250 μA | 600 V | - | 2.7V @ 15V, 30A | - | - | - | Yes | 2.1 nF @ 30 V | - | - | ||
| FMM6G30US60 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMSCGLQ75H120CTBL3NGAnlielectronics Тип | Microchip Technology |
PM-IGBT-SBD-BL3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | - | MSCGLQ | Microchip Technology / Atmel | 1200 V | 2.4 V | 160 A | - | - | 160 A | 1 | Microchip | - | 20 V | + 175 C | - | Microchip Technology | - 55 C | - | Screw | Bulk | - | - | 470 W | Active | - | - | -55°C ~ 175°C (TJ) | - | - | IGBTs | Si | Full Bridge | - | - | 470 W | Standard | IGBT Modules | 50 μA | 1200 V | - | 2.4V @ 15V, 75A | - | - | - | Yes | 4.4 nF @ 25 V | IGBT Silicon Modules | IGBT Modules | ||
| MSCGLQ75H120CTBL3NG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFF750R17ME7DB11BPSA1Anlielectronics Тип | Infineon Technologies |
MEDIUM POWER ECONO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | - | - | Infineon Technologies | 1700 V | 1.7V | 750 A | - | - | 750 A | 10 | Infineon | 1700 V | ±20V | + 175 C | - | Infineon Technologies | - 40 C | - | - | Tray | - | FF750R17ME7D_B11 SP005569131 | - | Active | - | - | -40°C ~ 175°C (TJ) | Tray | - | IGBTs | - | Half Bridge Inverter | - | 20mW | 20 mW | Standard | IGBT Modules | 5 mA | 1700 V | - | 1.85V @ 15V, 750A | 750A | Trench Field Stop | - | Yes | 78.1 nF @ 25 V | IGBT Silicon Modules | IGBT Modules | ||
| FF750R17ME7DB11BPSA1 |
Индекс :
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