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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Surface Mount Number of Terminals Transistor Element Material Ihs Manufacturer Number of Elements Operating Temperature-Max Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Rise Time-Max (tr) RoHS Turn-off Time-Max (toff) Turn-off Time-Nom (toff) Turn-on Time-Max (ton) Turn-on Time-Nom (ton) ECCN Code Additional Feature HTS Code Terminal Position Terminal Form Reach Compliance Code JESD-30 Code Qualification Status Configuration Case Connection Transistor Application Polarity/Channel Type Collector Current-Max (IC) Collector-Emitter Voltage-Max Gate-Emitter Voltage-Max VCEsat-Max Gate-Emitter Thr Voltage-Max Power Dissipation Ambient-Max Fall Time-Max (tf)
Siemens BSM25GAL100D
Mfr. Тип
BSM25GAL100D
Anlielectronics Тип

Siemens
Description: Insulated Gate Bipolar Transistor, 25A I(C), 1000V V(BR)CES, N-Channel
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 NO 7 SILICON SIEMENS A G 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PUFM-X7 RECTANGULAR FLANGE MOUNT Obsolete - - - - 40 ns 30 ns EAR99 CHOPPER SWITCH 8541.29.00.95 UPPER UNSPECIFIED unknown R-PUFM-X7 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 25 A 1000 V 20 V 3.3 V 6.2 V 300 W -
    BSM25GAL100D
    BSM25GAL100D

    Siemens
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Siemens BSM150GB100D
    Mfr. Тип
    BSM150GB100D
    Anlielectronics Тип

    		Siemens
    Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel,
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 NO 7 SILICON SIEMENS A G 2 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PUFM-X7 RECTANGULAR FLANGE MOUNT Transferred - - - - - - EAR99 - 8541.29.00.95 UPPER UNSPECIFIED unknown R-PUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 150 A 1000 V 20 V 3.3 V 6.2 V 1250 W -
      BSM150GB100D
      BSM150GB100D

      Siemens
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Siemens BSM150GAL120DN2E3166
      Mfr. Тип
      BSM150GAL120DN2E3166
      Anlielectronics Тип

      		Siemens
      Description: Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 NO 7 SILICON SIEMENS A G 1 - UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Transferred - - - 670 ns - 300 ns EAR99 FAST - UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED GENERAL PURPOSE SWITCHING N-CHANNEL 210 A 1200 V - - - - -
        BSM150GAL120DN2E3166
        BSM150GAL120DN2E3166

        Siemens
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Siemens BSS88
        Mfr. Тип
        BSS88
        Anlielectronics Тип

        		Siemens
        250 Ma 240 V N-channel Si Small Signal Mosfet TO-92
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - - - - - - - - - - - - Non-Compliant - - - - - - - - - - - - - - - - - - - - - - -
          BSS88
          BSS88

          Siemens
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Siemens BSM15GD120D2
          Mfr. Тип
          BSM15GD120D2
          Anlielectronics Тип

          		Siemens
          Description: Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 NO 17 SILICON SIEMENS A G 6 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-D17 RECTANGULAR FLANGE MOUNT Obsolete 90 ns - 600 ns 400 ns 110 ns 55 ns EAR99 - 8541.29.00.95 UPPER SOLDER LUG unknown R-XUFM-D17 Not Qualified BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 25 A 1200 V 20 V 3 V 6.5 V 870 W 100 ns
            BSM15GD120D2
            BSM15GD120D2

            Siemens
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Siemens BSM35GD120D2
            Mfr. Тип
            BSM35GD120D2
            Anlielectronics Тип

            		Siemens
            Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 NO 17 SILICON SIEMENS A G 6 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-D17 RECTANGULAR FLANGE MOUNT Obsolete 120 ns - 600 ns 400 ns 120 ns 60 ns EAR99 - 8541.29.00.95 UPPER SOLDER LUG unknown R-XUFM-D17 Not Qualified BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 50 A 1200 V 20 V 3.2 V 6.5 V 1680 W 75 ns
              BSM35GD120D2
              BSM35GD120D2

              Siemens
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -

              Discrete Semiconductor Products

              Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: BSM25GAL100D,BSM150GB100D,BSM150GAL120DN2E3166,BSS88,BSM15GD120D2.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - IGBTs - Single has 6 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.