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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Ihs Manufacturer | Manufacturer Package Code | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rise Time-Max (tr) | RoHS | Rohs Code | Turn-off Time-Max (toff) | Turn-off Time-Nom (toff) | Turn-on Time-Max (ton) | Turn-on Time-Nom (ton) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Gate-Emitter Voltage-Max | VCEsat-Max | Gate-Emitter Thr Voltage-Max | Power Dissipation Ambient-Max | Fall Time-Max (tf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипAPT75GN60SGAnlielectronics Тип | Microsemi Corporation |
Insulated Gate Bipolar Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | MICROSEMI CORP | - | - | - | - | - | - | - | - | - | Transferred | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| APT75GN60SG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAPT15GN120KAnlielectronics Тип | Microsemi Corporation |
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | MICROSEMI CORP | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | TO-220, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | - | - | No | - | 355 ns | - | 19 ns | - | No | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | SINGLE | - | POWER CONTROL | N-CHANNEL | TO-220AB | 195 W | 45 A | 1200 V | 30 V | - | 6.5 V | - | - | ||
| APT15GN120K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAPT15GT60BRAnlielectronics Тип | Microsemi Corporation |
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | MICROSEMI CORP | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | TO-247, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | TO-247 | 18 ns | - | No | - | 258 ns | - | 24 ns | e0 | No | EAR99 | - | AVALANCHE RATED | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247 | 125 W | 30 A | 600 V | 20 V | - | 5 V | - | 78 ns | ||
| APT15GT60BR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAPT110GL100JNAnlielectronics Тип | Microsemi Corporation |
110A, 1000V, N-CHANNEL IGBT, ISOTOP-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 4 | SILICON | ADVANCED POWER TECHNOLOGY INC | ISOTOP | - | 1 | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | ISOTOP | - | - | - | - | - | - | - | - | - | EAR99 | - | LOW CONDUCTION LOSS | 8541.29.00.95 | UPPER | UNSPECIFIED | - | unknown | - | 4 | R-PUFM-X4 | Not Qualified | SINGLE | ISOLATED | - | N-CHANNEL | - | - | 110 A | 1000 V | - | 3 V | - | 415 W | - | ||
| APT110GL100JN | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTGF50X60RTP3GAnlielectronics Тип | Microsemi Corporation |
Description: Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, MODULE-35
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 35 | SILICON | MICROSEMI CORP | - | 1 | 7 | 150 °C | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X35 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | Yes | - | 153 ns | - | 52 ns | e1 | Yes | EAR99 | TIN SILVER COPPER | LOW CONDUCTION LOSS | - | UPPER | UNSPECIFIED | - | compliant | - | 35 | R-XUFM-X35 | Not Qualified | COMPLEX | ISOLATED | MOTOR CONTROL | N-CHANNEL | - | - | 35 A | 600 V | - | - | - | - | - | ||
| APTGF50X60RTP3G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT25GP90BAnlielectronics Тип | Microsemi Corporation |
Insulated Gate Bipolar Transistor, 72A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | MICROSEMI CORP | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | TO-247, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | TO-247AD | - | - | No | - | 190 ns | - | 29 ns | - | No | EAR99 | - | LOW CONDUCTION LOSS | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 417 W | 72 A | 900 V | 20 V | - | 6 V | - | - | ||
| APT25GP90B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAPTGT200U170D4GAnlielectronics Тип | Microsemi Corporation |
Insulated Gate Bipolar Transistor, 280A I(C), 1700V V(BR)CES, N-Channel, MODULE-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 4 | SILICON | MICROSEMI CORP | - | 1 | 1 | 150 °C | - | UNSPECIFIED | MODULE-4 | RECTANGULAR | FLANGE MOUNT | Obsolete | MODULE | - | - | Yes | - | 965 ns | - | 330 ns | e1 | Yes | EAR99 | TIN SILVER COPPER | - | - | UPPER | UNSPECIFIED | - | unknown | - | 4 | R-XUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | MOTOR CONTROL | N-CHANNEL | - | - | 280 A | 1700 V | - | - | - | - | - | ||
| APTGT200U170D4G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTGT75X120RTP3Anlielectronics Тип | Microsemi Corporation |
Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 35 | SILICON | MICROSEMI CORP | - | - | 5 | 150 °C | - | UNSPECIFIED | MODULE-35 | RECTANGULAR | FLANGE MOUNT | Transferred | MODULE | - | - | No | - | 610 ns | - | 330 ns | e0 | No | EAR99 | TIN LEAD | - | - | UPPER | UNSPECIFIED | - | unknown | - | 35 | R-XUFM-X35 | Not Qualified | COMPLEX | ISOLATED | MOTOR CONTROL | N-CHANNEL | - | - | 105 A | 1200 V | - | - | - | - | - | ||
| APTGT75X120RTP3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT35GP120B2DF2Anlielectronics Тип | Microsemi Corporation |
Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | MICROSEMI CORP | - | - | - | 150 °C | - | - | , | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | 3 | - | - | - | - | - | N-CHANNEL | - | 543 W | 96 A | 1200 V | 20 V | - | 6 V | - | - | ||
| APT35GP120B2DF2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTGF25X120E2GAnlielectronics Тип | Microsemi Corporation |
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-17
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 17 | SILICON | MICROSEMI CORP | - | 1 | 6 | 150 °C | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X17 | RECTANGULAR | FLANGE MOUNT | Obsolete | MODULE | - | - | Yes | - | 450 ns | - | 140 ns | e1 | Yes | EAR99 | TIN SILVER COPPER | - | - | UPPER | UNSPECIFIED | - | compliant | - | 17 | R-XUFM-X17 | Not Qualified | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | MOTOR CONTROL | N-CHANNEL | - | - | 35 A | 1200 V | - | - | - | - | - | ||
| APTGF25X120E2G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSGT50T65FD1P7Anlielectronics Тип | Hangzhou Silan Microelectronics |
TO-247-3L IGBT Transistors / Modules ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | Tube-packed | - | - | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SGT50T65FD1P7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT35GL60BNAnlielectronics Тип | Microsemi Corporation |
35A, 600V, N-CHANNEL IGBT, TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | 100 ns | - | No | 55 ns | 35 ns | 30 ns | 15 ns | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | LOW CONDUCTION LOSS | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE | COLLECTOR | - | N-CHANNEL | TO-247 | 147 W | 35 A | 600 V | 20 V | 2.5 V | 6 V | 147 W | 700 ns | ||
| APT35GL60BN | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTGF330SK60D3Anlielectronics Тип | Microsemi Corporation |
Insulated Gate Bipolar Transistor, 460A I(C), 600V V(BR)CES, N-Channel, MODULE-7
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | MICROSEMI CORP | - | - | 1 | 150 °C | - | UNSPECIFIED | MODULE-7 | RECTANGULAR | FLANGE MOUNT | Obsolete | MODULE | - | - | No | - | 325 ns | - | 230 ns | e0 | No | EAR99 | TIN LEAD | - | - | UPPER | UNSPECIFIED | - | unknown | - | 7 | R-XUFM-X7 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | - | - | 460 A | 600 V | - | - | - | - | - | ||
| APTGF330SK60D3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT35G50BNAnlielectronics Тип | Microsemi Corporation |
TRANSISTOR,IGBT,N-CHAN,500V V(BR)CES,35A I(C),TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | 150 °C | - | - | , | - | - | Obsolete | - | - | - | No | - | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | - | - | N-CHANNEL | - | 162 W | 35 A | 500 V | 20 V | - | 5 V | - | - | ||
| APT35G50BN | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTGF125X60E3GAnlielectronics Тип | Microsemi Corporation |
Insulated Gate Bipolar Transistor, 180A I(C), 600V V(BR)CES, N-Channel, MODULE-33
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 33 | SILICON | MICROSEMI CORP | - | 1 | 6 | 150 °C | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X33 | RECTANGULAR | FLANGE MOUNT | Obsolete | MODULE | - | - | Yes | - | 260 ns | - | 155 ns | e1 | Yes | EAR99 | TIN SILVER COPPER | - | - | UPPER | UNSPECIFIED | - | unknown | - | 33 | R-XUFM-X33 | Not Qualified | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | MOTOR CONTROL | N-CHANNEL | - | - | 180 A | 600 V | - | - | - | - | - | ||
| APTGF125X60E3G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTGF10X60RTP2GAnlielectronics Тип | Microsemi Corporation |
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, MODULE-24
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 24 | SILICON | MICROSEMI CORP | - | 1 | 7 | 150 °C | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X24 | RECTANGULAR | FLANGE MOUNT | Obsolete | MODULE | - | - | Yes | - | 260 ns | - | 70 ns | e1 | Yes | EAR99 | TIN SILVER COPPER | LOW CONDUCTION LOSS | - | UPPER | UNSPECIFIED | - | compliant | - | 24 | R-XUFM-X24 | Not Qualified | COMPLEX | ISOLATED | MOTOR CONTROL | N-CHANNEL | - | - | 20 A | 600 V | - | - | - | - | - | ||
| APTGF10X60RTP2G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT35G60BNAnlielectronics Тип | Microsemi Corporation |
Description: TRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,35A I(C),TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | 150 °C | - | - | , | - | - | Obsolete | - | - | - | No | - | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | - | - | N-CHANNEL | - | 162 W | 35 A | 600 V | 20 V | - | 5 V | - | - | ||
| APT35G60BN | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTGT300U170D4GAnlielectronics Тип | Microsemi Corporation |
Description: Insulated Gate Bipolar Transistor, 530A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, D4, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 4 | SILICON | MICROSEMI CORP | - | 1 | 1 | 150 °C | - | UNSPECIFIED | ROHS COMPLIANT, D4, 4 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | Yes | - | 1100 ns | - | 430 ns | e1 | Yes | EAR99 | TIN SILVER COPPER | AVALANCHE RATED | - | UPPER | UNSPECIFIED | - | compliant | - | 4 | R-XUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | - | - | 530 A | 1700 V | - | - | - | - | - | ||
| APTGT300U170D4G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT15GP60SAnlielectronics Тип | Microsemi Corporation |
Description: Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, D3PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | MICROSEMI CORP | - | - | 1 | 150 °C | - | PLASTIC/EPOXY | D3PAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | D2PAK | - | - | No | - | 157 ns | - | 20 ns | - | No | EAR99 | - | LOW CONDUCTION LOSS | - | SINGLE | GULL WING | NOT SPECIFIED | unknown | NOT SPECIFIED | 3 | R-PSSO-G2 | Not Qualified | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | - | 250 W | 56 A | 600 V | 20 V | - | 6 V | - | - | ||
| APT15GP60S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT130GL60JNAnlielectronics Тип | Microsemi Corporation |
130A, 600V, N-CHANNEL IGBT, ISOTOP-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 4 | SILICON | ADVANCED POWER TECHNOLOGY INC | ISOTOP | - | 1 | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | ISOTOP | - | - | - | - | - | - | - | - | - | EAR99 | - | LOW CONDUCTION LOSS | 8541.29.00.95 | UPPER | UNSPECIFIED | - | unknown | - | 4 | R-PUFM-X4 | Not Qualified | SINGLE | ISOLATED | - | N-CHANNEL | - | - | 130 A | 600 V | - | 2.5 V | - | 415 W | - | ||
| APT130GL60JN |
Индекс :
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