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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Material Weight Number of Terminals Transistor Element Material AEC Qualified Breakdown Voltage / V ECCN (US) Ihs Manufacturer Lead Shape Manufacturer Manufacturer Part Number Maximum Continuous Drain Current (mA) Maximum Drain Gate Voltage (V) Maximum Gate Source Voltage (V) Maximum Operating Temperature (°C) Maximum Power Dissipation (mW) Mfr Military Minimum Operating Temperature (°C) Moisture Sensitivity Levels Mounting Number of Elements Operating Temperature-Max Package Package Body Material Package Description Package Height Package Length Package Shape Package Style Package Width Part Life Cycle Code Part Package Code PCB changed Product Status Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Voltage Rating (DC) Voltage, Rating Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Subcategory Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Configuration Element Configuration Operating Mode Power Dissipation Case Connection Power - Max FET Type Transistor Application Input Capacitance (Ciss) (Max) @ Vds Drain to Source Voltage (Vdss) Polarity/Channel Type Continuous Drain Current (ID) JEDEC-95 Code Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage DS Breakdown Voltage-Min Channel Type FET Technology Power Dissipation-Max (Abs) Drain to Source Resistance Feedback Cap-Max (Crss) Source Url Status Check Date Highest Frequency Band Power Dissipation Ambient-Max Current - Drain (Idss) @ Vds (Vgs=0) Voltage - Cutoff (VGS off) @ Id Voltage - Breakdown (V(BR)GSS) Resistance - RDS(On) Power Gain-Min (Gp) Current Drain (Id) - Max Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
NXP USA Inc. J174,126
Mfr. Тип
J174,126
Anlielectronics Тип

NXP USA Inc.
Trans JFET P-CH 30V 135mA Si 3-Pin SPT Ammo
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - - Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) - - TO-92 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 150°C TJ Tape & Box (TB) 1997 - - - Obsolete 1 (Unlimited) - - - - - - - - - - - - - - - J174 - - - - - - - - 400mW P-Channel - 8pF @ 10V VGS 30V - - - - - - - - - - - - - - - - - 20mA @ 15V 5V @ 10nA 30V 85Ohms - - - - - - - ROHS3 Compliant -
    J174,126
    J174,126

    NXP USA Inc.
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Rochester Electronics BF245B_D27Z
    Mfr. Тип
    BF245B_D27Z
    Anlielectronics Тип

    		Rochester Electronics
    -
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - Through Hole - - - 3 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Compliant - 30 V 30 V - - - - - - - - - - - 150 °C -55 °C - - - - - - - - 15 mA - - - - - - Single - 350 mW - - - - - 30 V - 5 mA - -30 V - - - - - - - - - - - - - - - - - - - - - - - - - Lead Free
      BF245B_D27Z
      BF245B_D27Z

      Rochester Electronics
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Vishay SST404
      Mfr. Тип
      SST404
      Anlielectronics Тип

      		Vishay
      -
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
        SST404
        SST404

        Vishay
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Vishay U406
        Mfr. Тип
        U406
        Anlielectronics Тип

        		Vishay
        -
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - Through Hole - - NO 6 - - - 6 SILICON - - - CALOGIC LLC - Calogic Inc U406 - - - - - - - - - - 2 150 °C - METAL CYLINDRICAL, O-MBCY-W6 - - ROUND CYLINDRICAL - Active TO-71 - - NOT SPECIFIED 5.39 Non-Compliant No - - - - - - e0 No - - - - Tin/Lead (Sn/Pb) 150 °C -55 °C - 8541.21.00.95 FET General Purpose Small Signal - BOTTOM WIRE NOT SPECIFIED compliant - - - 6 O-MBCY-W6 Not Qualified SEPARATE, 2 ELEMENTS Dual ENHANCEMENT MODE - - - - SWITCHING - - N-CHANNEL - TO-71 -40 V - - - - - - JUNCTION - 250 Ω 3 pF - - - - - - - - - - - - - - - -
          U406
          U406

          Vishay
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          NTE Electronics, Inc. NTE468
          Mfr. Тип
          NTE468
          Anlielectronics Тип

          		NTE Electronics, Inc.
          Small Signal Field-Effect Transistor, 35V, 1-Element, N-Channel, Silicon, Junction FET,
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - - Through Hole TO-226-3, TO-92-3 (TO-226AA) - - TO-92 - - - - - - - - - NTE Electronics NTE468 - - - - - NTE Electronics, Inc - - - - - - Bag - - - - - - - - - - Active - - - - - - -55°C ~ 150°C (TJ) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 625 mW N-Channel - - 35 V - - - - - - - - - - - - - - - - - 20 mA @ 15 V 3 V @ 1 A 35 V 30 Ohms - - - - - - - - -
            NTE468
            NTE468

            NTE Electronics, Inc.
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor TIS74
            Mfr. Тип
            TIS74
            Anlielectronics Тип

            		ON Semiconductor
            JFET N-CH 30V 0.35W TO92
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - - Through Hole TO-226-3, TO-92-3 (TO-226AA) - - TO-92-3 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Bulk 2002 - - - Obsolete 1 (Unlimited) - - - - - - - - - - - - - - - - - - - - - - - - 350mW N-Channel - 18pF @ 10V VGS - - - - - - - - - - - - - - - - - - 20mA @ 15V 2V @ 4nA 30V 40Ohms - - - - - - - - -
              TIS74
              TIS74

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Infineon Technologies IJW120R100T1FKSA1
              Mfr. Тип
              IJW120R100T1FKSA1
              Anlielectronics Тип

              		Infineon Technologies
              N-CH 1200V 0.026mA 3-Pin TO-247 Tube
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 14 Weeks Through Hole Through Hole TO-247-3 - - PG-TO247-3 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -55°C~175°C TJ Tube 2013 - - - Obsolete 1 (Unlimited) - - - 175°C -55°C - - - - - - - - - - - - - - - Single - - - 190W N-Channel - 1550pF @ 19.5V VGS 1200V - 26μA - 2V 1.2kV - - - - - - - - - - - - 1.5μA @ 1200V - - 100mOhms - 26A - - - - - RoHS Compliant Lead Free
                IJW120R100T1FKSA1
                IJW120R100T1FKSA1

                Infineon Technologies
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Toshiba TIM5359-35SL
                Mfr. Тип
                TIM5359-35SL
                Anlielectronics Тип

                		Toshiba
                TRANSISTOR C BAND, Si, N-CHANNEL, RF POWER, JFET, 2-16G1B, 3 PIN, FET RF Power
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                  TIM5359-35SL
                  TIM5359-35SL

                  Toshiba
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor PN4393_D26Z
                  Mfr. Тип
                  PN4393_D26Z
                  Anlielectronics Тип

                  		ON Semiconductor
                  JFET N-CH 30V 625MW TO92
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) - - TO-92-3 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2011 - - - Obsolete 1 (Unlimited) - - - - - - - - - - - - - - - 2N4393 - - - - - - - - 625mW N-Channel - 14pF @ 20V - - - - - - - - - - - - - - - - - - 5mA @ 20V 500mV @ 1nA 30V 100Ohms - - - - - - - - -
                    PN4393_D26Z
                    PN4393_D26Z

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Toshiba 2SK365-GR(F)
                    Mfr. Тип
                    2SK365-GR(F)
                    Anlielectronics Тип

                    		Toshiba
                    Trans JFET N-CH 6.5mA Si 3-Pin
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - - - - - - - Si - - - No - EAR99 - Through Hole - - 6.5 50 -1.5 125 200 - No -55 - Through Hole - - - - - 3.2(Max) 4.2(Max) - - 2.6(Max) - - 3 - - - - - - - - - - - - - Obsolete - - - - - - - - - - - - - - - - - 3 - - Single - - - - - - - - - - - - - - - - - - N - - - - - - - - - - - - - - - - - - RoHS Compliant -
                      2SK365-GR(F)
                      2SK365-GR(F)

                      Toshiba
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Avago ATF-34143-TR2G
                      Mfr. Тип
                      ATF-34143-TR2G
                      Anlielectronics Тип

                      		Avago
                      X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, LEAD FREE, PLASTIC, SC-70, 4 PIN
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - - - - YES - - - - 4 SILICON - - - BROADCOM LTD - Broadcom Limited ATF-34143-TR2G - - - - - - - - 1 - 1 160 °C - PLASTIC/EPOXY SMALL OUTLINE, R-PDSO-G4 - - RECTANGULAR SMALL OUTLINE - Obsolete - - - NOT SPECIFIED 5.11 - Yes - - - - - - e3 - - - - EAR99 Matte Tin (Sn) - - - - FET RF Small Signals - DUAL GULL WING 260 compliant - - - - R-PDSO-G4 Not Qualified SINGLE - DEPLETION MODE - SOURCE - - AMPLIFIER - - N-CHANNEL - - - - - - - 5.5 V - HIGH ELECTRON MOBILITY - - - - X BAND 0.725 W - - - - 16 dB - - - - - - - -
                        ATF-34143-TR2G
                        ATF-34143-TR2G

                        Avago
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        NXP USA Inc. J109,126
                        Mfr. Тип
                        J109,126
                        Anlielectronics Тип

                        		NXP USA Inc.
                        JFET N-CH 25V 0.4W SOT54
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - - Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) NO - - - - - SILICON - - - - - - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - - - - - 150°C TJ Tape & Box (TB) 1996 - e3 - Obsolete 1 (Unlimited) 3 EAR99 Matte Tin (Sn) - - - 8541.21.00.95 - - BOTTOM - NOT SPECIFIED unknown - NOT SPECIFIED J109 3 O-PBCY-T3 Not Qualified SINGLE - DEPLETION MODE - - 400mW N-Channel SWITCHING 30pF @ 10V VGS - - - - - - - 12Ohm - 25V - JUNCTION 0.4W - 15 pF 2013-06-14 00:00:00 - - 80mA @ 15V 2V @ 1μA 25V 12Ohm - - - - - - - ROHS3 Compliant -
                          J109,126
                          J109,126

                          NXP USA Inc.
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Toshiba TIM6472-35SL
                          Mfr. Тип
                          TIM6472-35SL
                          Anlielectronics Тип

                          		Toshiba
                          TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - Screw - - - 3 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Compliant - - - - Bulk - - - - - - - - - 175 °C -65 °C - - - - - - - - - - - - - - - Single - - - - - - - - - 20 A - -5 V - - - - - - - - - - - - - - - - - - - - - - No - - -
                            TIM6472-35SL
                            TIM6472-35SL

                            Toshiba
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            NXP USA Inc. BFR30,235
                            Mfr. Тип
                            BFR30,235
                            Anlielectronics Тип

                            		NXP USA Inc.
                            Trans JFET N-CH 25V 10mA 3-Pin TO-236AB T/R
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 8 Weeks - Surface Mount TO-236-3, SC-59, SOT-23-3 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 150°C TJ Tape & Reel (TR) 1997 - - - Obsolete 1 (Unlimited) - - - - - - - - - - - - - - - BFR30 3 - - - - - - - 250mW N-Channel - 4pF @ 10V 25V - - - - - - - - - - - - - - 2013-06-14 00:00:00 - - 4mA @ 10V 5V @ 0.5nA - - - 10mA - - - - - ROHS3 Compliant -
                              BFR30,235
                              BFR30,235

                              NXP USA Inc.
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Central Semiconductor Corp 2N4391 PBFREE
                              Mfr. Тип
                              2N4391 PBFREE
                              Anlielectronics Тип

                              		Central Semiconductor Corp
                              JFET N-CH 40V 150MA 1.8W TO18
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - - Through Hole TO-206AA, TO-18-3 Metal Can - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -65°C~175°C TJ Bulk 2001 - e3 - Active - - - MATTE TIN OVER NICKEL - - - - - - - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - 1.8W N-Channel - 14pF @ 20V - - - - - - - - - - - - - - - - - - 150mA @ 20V 10V @ 1nA 40V 30Ohm - 100pA - - - - - ROHS3 Compliant -
                                2N4391 PBFREE
                                2N4391 PBFREE

                                Central Semiconductor Corp
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Rochester Electronics 2N5950_J35Z
                                Mfr. Тип
                                2N5950_J35Z
                                Anlielectronics Тип

                                		Rochester Electronics
                                -
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - Through Hole - - - 3 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Compliant - - 30 V - Bulk - - - - - - - - - 150 °C -55 °C - - - - - - - - 15 mA - - - - - - Single - - - - - - - - - - - -30 V - - - - - - - - - - - - - - - - - - - - - - No - - -
                                  2N5950_J35Z
                                  2N5950_J35Z

                                  Rochester Electronics
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Central Semiconductor Corp CMPF4416A TR
                                  Mfr. Тип
                                  CMPF4416A TR
                                  Anlielectronics Тип

                                  		Central Semiconductor Corp
                                  JFET N-CH 35V 10MA SOT23
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 18 Weeks - Surface Mount TO-236-3, SC-59, SOT-23-3 YES - - - - - SILICON - - - - - - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - - - - - -65°C~150°C TJ Cut Tape (CT) 2010 - e3 yes Active 1 (Unlimited) 3 - MATTE TIN (315) - - - 8541.21.00.95 - - DUAL GULL WING 260 - - 10 - - R-PDSO-G3 Not Qualified SINGLE - DEPLETION MODE - - 350mW N-Channel AMPLIFIER 4.5pF @ 15V - - - - - - - - - 35V - JUNCTION - - 1.2 pF - VERY HIGH FREQUENCY B - 5mA @ 15V 2.5V @ 1nA 35V - - - - - - - - ROHS3 Compliant -
                                    CMPF4416A TR
                                    CMPF4416A TR

                                    Central Semiconductor Corp
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ON Semiconductor 2SK715W
                                    Mfr. Тип
                                    2SK715W
                                    Anlielectronics Тип

                                    		ON Semiconductor
                                    Trans JFET N-CH 15V 50mA Si 3-Pin SPA
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - Through Hole Through Hole SC-72 - 3 - - - - SILICON - - - - - - - - - - - - - - - - - 1 - - - - - - - - - - - - - - - - - - - 125°C TJ Bulk 1999 - - - Obsolete 1 (Unlimited) 3 EAR99 Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) - - LOW NOISE 8541.21.00.95 - 300mW - - - - - - 2SK715 3 - Not Qualified - Single DEPLETION MODE - - - N-Channel AMPLIFIER 10pF @ 5V 15V - 50mA - - - 0.05A - - 15V - METAL-OXIDE SEMICONDUCTOR - - - - - - 14.5mA @ 5V 600mV @ 100μA - - - - - - - - - RoHS Compliant -
                                      2SK715W
                                      2SK715W

                                      ON Semiconductor
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      NTE Electronics, Inc. NTE133
                                      Mfr. Тип
                                      NTE133
                                      Anlielectronics Тип

                                      		NTE Electronics, Inc.
                                      Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO-106, TO-106, 3 PIN
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - Through Hole Through Hole TO-106-3 Domed NO 3 TO-106 - 4.535924 g 3 SILICON - -25 V - NTE ELECTRONICS INC - NTE Electronics NTE133 - - - - - NTE Electronics, Inc - - - - 1 - Bag PLASTIC/EPOXY TO-106, 3 PIN - - ROUND CYLINDRICAL - Active BCY - Active - 1.57 Compliant - - - -55°C ~ 150°C (TJ) - - - - - - - - EAR99 - 150 °C -55 °C - 8541.21.00.95 Other Transistors 300 mW BOTTOM WIRE - unknown - - - 3 O-PBCY-W3 Not Qualified SINGLE Single DEPLETION MODE 300 mW - 300 mW N-Channel AMPLIFIER - 25 V N-CHANNEL 500 µA TO-106 -25 V - - - -6.5 V 25 V - JUNCTION 0.3 W - 2 pF - - - 500 µA @ 15 V 6.5 V @ 1 nA 25 V - - - 4.572 mm 88.9 mm 5.2832 mm - Unknown - -
                                        NTE133
                                        NTE133

                                        NTE Electronics, Inc.
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Vishay U404
                                        Mfr. Тип
                                        U404
                                        Anlielectronics Тип

                                        		Vishay
                                        -
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - Through Hole - - NO 6 - - - 6 SILICON - - - VISHAY SILICONIX - Vishay Siliconix U404 - - - - - - - - - - 2 150 °C - METAL CYLINDRICAL, O-MBCY-W6 - - ROUND CYLINDRICAL - Obsolete TO-71 - - NOT SPECIFIED 5.35 Compliant No - - - Bulk - - e0 - - - - - TIN LEAD 150 °C -55 °C LOW NOISE 8541.21.00.95 - - BOTTOM WIRE NOT SPECIFIED compliant - - - 6 O-MBCY-W6 Not Qualified SEPARATE, 2 ELEMENTS Dual DEPLETION MODE - - - - SWITCHING - - N-CHANNEL - TO-71 -40 V - - - - - - JUNCTION - 250 Ω 3 pF - - - - - - - - - - - - No - - -
                                          U404
                                          U404

                                          Vishay
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - JFETs definition: The JFET(Junction Gate Field-Effect Transistor) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconduc... Transistors - JFETs Product Listing: J174,126,BF245B_D27Z,SST404,U406,NTE468.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - JFETs has 1626 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.