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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Contact plating | Mounting Type | Package / Case | Surface Mount | Number of pins | Supplier Device Package | Number of Terminals | Transistor Element Material | 1st Connector Mounting Type | Cable Material | 2nd Connector Mounting Type | Exterior Housing Material | Connector | Connector pinout layout | Contacts pitch | Design Level | Drain Current-Max (ID) | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Manufacturer Package Code | Mfr | Number of Elements | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Piece Count | Rohs Code | Spatial orientation | Transport packaging size/quantity | Type of connector | Operating temperature | Packaging | Series | Size / Dimension | Pbfree Code | Part Status | ECCN Code | Color | Additional Feature | Terminal Position | Terminal Form | Shielding | Peak Reflow Temperature (Cel) | Ingress Protection | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Wire Gauge | Configuration | Operating Mode | Voltage - Forward (Vf) (Typ) | Viewing Angle | Case Connection | Current - Test | Usage | Lens Style | Transistor Application | Polarity/Channel Type | Millicandela Rating | Lens Transparency | Wavelength - Peak | 1st Connector Gender | 1st Connector Number of Positions Loaded | 1st Connector Type | 1st Connector Number of Positions | Assembly Configuration | 2nd Connector Type | Lens Color | 1st Connector Orientation | 1st Connector Shell Size - Insert | DS Breakdown Voltage-Min | FET Technology | 2nd Connector Gender | Switching | Rated voltage | 2nd Connector Number of Positions | 2nd Connector Number of Positions Loaded | 2nd Connector Orientation | Highest Frequency Band | 2nd Connector Shell Size - Insert | Profile | Power Gain-Min (Gp) | Length | Plating thickness | Height (Max) | Flammability rating |
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  | Mfr. ТипSGFCF10S-DT1Anlielectronics Тип | SUMITOMO ELECTRIC Industries Ltd |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC, Z2D, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 6 | GALLIUM NITRIDE | - | - | - | 1 | - | - | - | - | - | - | - | SUMITOMO ELECTRIC INDUSTRIES LTD | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-N6 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | DUAL | NO LEAD | - | - | - | unknown | - | - | - | R-PDSO-N6 | - | - | SINGLE | DEPLETION MODE | - | - | SOURCE | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | - | 160 V | HIGH ELECTRON MOBILITY | - | - | - | - | - | - | S BAND | - | - | - | - | - | - | - | ||
| SGFCF10S-DT1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLM4450-18FAnlielectronics Тип | SUMITOMO ELECTRIC Device Innovations Inc |
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | gold-plated | - | - | YES | 2 | - | 2 | GALLIUM ARSENIDE | - | - | - | 1 | socket | 1x2 | 2.54mm | - | 6 A | THT | 0.1 g | EUDYNA DEVICES INC | female | CASE IK | - | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | Yes | straight | - | pin strips | -40...163°C | - | - | - | Yes | - | EAR99 | - | HIGH RELIABILITY | DUAL | FLAT | - | NOT SPECIFIED | - | unknown | 1.5A | NOT SPECIFIED | 2 | R-CDFM-F2 | Not Qualified | - | SINGLE | DEPLETION MODE | - | - | SOURCE | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | - | 15 V | JUNCTION | - | - | 60V | - | - | - | C BAND | - | beryllium copper | - | - | 0.254µm | - | UL94V-0 | ||
| FLM4450-18F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFSX017LGAnlielectronics Тип | SUMITOMO ELECTRIC Device Innovations Inc |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 4 | GALLIUM ARSENIDE | - | - | - | 1 | - | - | - | - | - | - | - | EUDYNA DEVICES INC | - | CASE LG | - | - | CERAMIC, METAL-SEALED COFIRED | DISK BUTTON, O-CRDB-F4 | ROUND | DISK BUTTON | Transferred | - | - | Yes | - | - | - | - | - | - | - | Yes | - | EAR99 | - | HIGH RELIABILITY | RADIAL | FLAT | - | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | 4 | O-CRDB-F4 | Not Qualified | - | SINGLE | DEPLETION MODE | - | - | SOURCE | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | - | 8 V | JUNCTION | - | - | - | - | - | - | X BAND | - | - | - | - | - | - | - | ||
| FSX017LG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLL177MEAnlielectronics Тип | SUMITOMO ELECTRIC Device Innovations Inc |
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 2 | GALLIUM ARSENIDE | - | - | - | 1 | - | - | - | - | - | - | - | EUDYNA DEVICES INC | - | CASE ME | - | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | Yes | - | - | - | - | - | - | - | Yes | - | EAR99 | - | HIGH RELIABILITY | DUAL | FLAT | - | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | 2 | R-CDFM-F2 | Not Qualified | - | SINGLE | DEPLETION MODE | - | - | SOURCE | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | L BAND | - | - | - | - | - | - | - | ||
| FLL177ME | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFLK027XVAnlielectronics Тип | SUMITOMO ELECTRIC Industries Ltd |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 4 | GALLIUM ARSENIDE | - | - | - | 1 | - | - | - | Beginner Kit | - | - | - | SUMITOMO ELECTRIC INDUSTRIES LTD | - | - | - | - | UNSPECIFIED | UNCASED CHIP, R-XUUC-N4 | RECTANGULAR | UNCASED CHIP | Obsolete | DIE | 60 | Yes | - | - | - | - | - | - | - | Yes | - | EAR99 | - | HIGH RELIABILITY | UPPER | NO LEAD | - | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | 4 | R-XUUC-N4 | Not Qualified | - | SINGLE | DEPLETION MODE | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | - | 15 V | HIGH ELECTRON MOBILITY | - | - | - | - | - | - | KU BAND | - | - | - | - | - | - | - | ||
| FLK027XV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFHX35LGAnlielectronics Тип | SUMITOMO ELECTRIC Industries Ltd |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 4 | GALLIUM ARSENIDE | - | - | - | 1 | - | - | - | - | - | - | - | SUMITOMO ELECTRIC INDUSTRIES LTD | - | CASE LG | - | - | CERAMIC, METAL-SEALED COFIRED | DISK BUTTON, O-CRDB-F4 | ROUND | DISK BUTTON | Obsolete | - | - | Yes | - | - | - | - | - | - | - | Yes | - | EAR99 | - | HIGH RELIABILITY | RADIAL | FLAT | - | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | 4 | O-CRDB-F4 | Not Qualified | - | SINGLE | DEPLETION MODE | - | - | SOURCE | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | - | 4 V | HIGH ELECTRON MOBILITY | - | - | - | - | - | - | KU BAND | - | - | 8.5 dB | - | - | - | - | ||
| FHX35LG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLM1213-4FAnlielectronics Тип | SUMITOMO ELECTRIC Device Innovations Inc |
Description: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 2 | GALLIUM ARSENIDE | Free Hanging (In-Line) | Polyvinyl Chloride (PVC) | Free Hanging (In-Line) | 1 | - | - | - | - | 1.3 A | - | - | EUDYNA DEVICES INC | - | CASE IA | - | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | Yes | - | - | - | - | Box | BC | - | Yes | Active | EAR99 | Black | HIGH RELIABILITY | DUAL | FLAT | Unshielded | NOT SPECIFIED | IP67 - Dust Tight, Waterproof | unknown | - | NOT SPECIFIED | 2 | R-CDFM-F2 | Not Qualified | Round | SINGLE | DEPLETION MODE | - | - | SOURCE | - | Industrial Environments | - | AMPLIFIER | N-CHANNEL | - | - | - | Male Pins | All | Receptacle | 3 | Standard | Plug | - | A | M8 | 15 V | JUNCTION | Female Sockets | - | - | 3 | All | A | KU BAND | M8 | - | - | 3.28' (1.00m) | - | - | - | ||
| FLM1213-4F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEGNC105MKAnlielectronics Тип | SUMITOMO ELECTRIC Device Innovations Inc |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | 0603 (1608 Metric) | - | - | 0603 | - | - | - | - | - | - | - | - | - | - | - | - | 1.37 | SUMITOMO ELECTRIC DEVICE INNOVATIONS USA INC | - | - | Kingbright | - | - | , | - | - | Contact Manufacturer | - | - | - | - | 48*31.5*27/5000 | - | - | Cut Tape (CT);Tape & Box (TB) | - | 1.60mm L x 0.80mm W | - | Active | EAR99 | Blue | - | - | - | - | - | - | unknown | - | - | - | - | - | - | Independent | - | 2.8V | 120° | - | 2mA | - | Oval with Flat Top | - | - | 35mcd | Clear | 463nm | - | - | - | - | - | - | Colorless | - | - | - | - | - | 468nm | - | - | - | - | - | - | - | - | - | - | 0.70mm | - | ||
| EGNC105MK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFHX45XAnlielectronics Тип | SUMITOMO ELECTRIC Device Innovations Inc |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 4 | GALLIUM ARSENIDE | - | - | - | 1 | - | - | - | - | - | - | - | EUDYNA DEVICES INC | - | - | - | - | UNSPECIFIED | UNCASED CHIP, R-XUUC-N | RECTANGULAR | UNCASED CHIP | Transferred | DIE | - | Yes | - | - | - | - | - | - | - | Yes | - | EAR99 | - | LOW NOISE, HIGH RELIABILITY | UPPER | NO LEAD | - | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | - | R-XUUC-N | Not Qualified | - | SINGLE | DEPLETION MODE | - | - | - | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | - | 3.5 V | HIGH ELECTRON MOBILITY | - | - | - | - | - | - | KU BAND | - | - | 10 dB | - | - | - | - | ||
| FHX45X | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEGNB010MKAnlielectronics Тип | SUMITOMO ELECTRIC Industries Ltd |
Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL-CERAMIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 2 | GALLIUM NITRIDE | - | - | - | - | - | - | - | - | - | - | - | SUMITOMO ELECTRIC INDUSTRIES LTD | - | - | - | 1 | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | DUAL | FLAT | - | - | - | unknown | - | - | 2 | R-CDFM-F2 | Not Qualified | - | SINGLE | DEPLETION MODE | - | - | SOURCE | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | - | 120 V | HIGH ELECTRON MOBILITY | - | - | - | - | - | - | S BAND | - | - | - | - | - | - | - | ||
| EGNB010MK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипELM5964-4PSTAnlielectronics Тип | SUMITOMO ELECTRIC Industries Ltd |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, CASE I2C, 7 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 6 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | - | 1.3 A | - | - | SUMITOMO ELECTRIC INDUSTRIES LTD | - | CASE I2C | - | 1 | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G6 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | DUAL | GULL WING | - | - | - | unknown | - | - | 7 | R-PDSO-G6 | Not Qualified | - | SINGLE | DEPLETION MODE | - | - | SOURCE | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | C BAND | - | - | - | - | - | - | - | ||
| ELM5964-4PST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEGN28B200IV-RAnlielectronics Тип | SUMITOMO ELECTRIC Device Innovations Inc |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SUMITOMO ELECTRIC DEVICE INNOVATIONS USA INC | - | - | - | - | - | , | - | - | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| EGN28B200IV-R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEGNB090MKAnlielectronics Тип | SUMITOMO ELECTRIC Industries Ltd |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, MK, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 2 | GALLIUM NITRIDE | - | - | - | - | - | - | - | - | - | - | - | SUMITOMO ELECTRIC INDUSTRIES LTD | - | - | - | 1 | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | DUAL | FLAT | - | - | - | unknown | - | - | 2 | R-CDFM-F2 | Not Qualified | - | SINGLE | DEPLETION MODE | - | - | SOURCE | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | - | 120 V | HIGH ELECTRON MOBILITY | - | - | - | - | - | - | L BAND | - | - | - | - | - | - | - | ||
| EGNB090MK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSGK5867-60AAnlielectronics Тип | SUMITOMO ELECTRIC Industries Ltd |
Description: RF Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SUMITOMO ELECTRIC INDUSTRIES LTD | - | - | - | - | - | , | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SGK5867-60A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEGN29B100IV-RAnlielectronics Тип | SUMITOMO ELECTRIC Device Innovations Inc |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SUMITOMO ELECTRIC DEVICE INNOVATIONS USA INC | - | - | - | - | - | , | - | - | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| EGN29B100IV-R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSGN19C210I2DAnlielectronics Тип | SUMITOMO ELECTRIC Industries Ltd |
Description: RF Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SUMITOMO ELECTRIC INDUSTRIES LTD | - | - | - | - | - | , | - | - | Active | - | - | Yes | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SGN19C210I2D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSGN21C105MKAnlielectronics Тип | SUMITOMO ELECTRIC Industries Ltd |
RF Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SUMITOMO ELECTRIC INDUSTRIES LTD | - | - | - | - | - | , | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SGN21C105MK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEGN21C160I2DAnlielectronics Тип | SUMITOMO ELECTRIC Industries Ltd |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, I2D, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 2 | GALLIUM NITRIDE | - | - | - | - | - | - | - | - | - | - | - | SUMITOMO ELECTRIC INDUSTRIES LTD | - | - | - | 1 | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | HIGH RELIABILITY | DUAL | FLAT | - | - | - | unknown | - | - | 2 | R-CDFM-F2 | Not Qualified | - | SINGLE | DEPLETION MODE | - | - | SOURCE | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | - | 160 V | HIGH ELECTRON MOBILITY | - | - | - | - | - | - | S BAND | - | - | - | - | - | - | - | ||
| EGN21C160I2D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSGN2933-150D-RAnlielectronics Тип | SUMITOMO ELECTRIC Industries Ltd |
RF Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SUMITOMO ELECTRIC INDUSTRIES LTD | - | - | - | - | - | , | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SGN2933-150D-R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFLM3439-4FAnlielectronics Тип | SUMITOMO ELECTRIC Device Innovations Inc |
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | - | - | 1.3 A | - | - | EUDYNA DEVICES INC | - | CASE IB | - | 1 | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | Yes | - | - | - | - | - | - | - | Yes | - | EAR99 | - | HIGH RELIABILITY | DUAL | FLAT | - | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | 2 | R-CDFM-F2 | Not Qualified | - | SINGLE | DEPLETION MODE | - | - | SOURCE | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | - | 15 V | JUNCTION | - | - | - | - | - | - | C BAND | - | - | - | - | - | - | - | ||
| FLM3439-4F |
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