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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Allowable deviation | Attenuation | Cable jacket material | Cable type | Cycle endurance | Description | Dielectric strength | Drain Current-Max (ID) | Gross weight | Gross Weight | Ihs Manufacturer | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | Transport packaging size/quantity | ECCN Code | Connector type | Type | Resistance | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Configuration | Insulation resistance | Impedance | Cable length | Operating Mode | Transistor Application | Polarity/Channel Type | Operating temperature range | Drain-source On Resistance-Max | Frequency range | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Cable diameter | Rotation angle | Power | Feedback Cap-Max (Crss) | Housing diameter | Height |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипQM3202SAnlielectronics Тип | UPI Semiconductor Corp |
Description: Small Signal Field-Effect Transistor, 7.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | 2 | ± 10 % | - | - | - | 200 times | - | 600 V | 7.3 A | - | 0.76 | UPI SEMICONDUCTOR CORP | -55 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | Yes | 40*39*19/2000 | EAR99 | - | trimmer resistor | 100 kΩ | DUAL | GULL WING | NOT SPECIFIED | unknown | NOT SPECIFIED | R-PDSO-G8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ≥1000 (at Udc=500 V) V | - | - | ENHANCEMENT MODE | SWITCHING | N-CHANNEL | -55 …+150 °C | 0.018 Ω | - | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 260 ° | maximum dissipation - 0.5 W | 91 pF | Ф6.35 mm | 4.57 (housing) mm | ||
| QM3202S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипQM3016M3Anlielectronics Тип | UPI Semiconductor Corp |
Power Field-Effect Transistor, 15.7A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | 1 | - | 0.15 dB/m | FEP fluoroplastic | RG-174U | - | Antenna adapter - cable assembly | - | 15.7 A | 6.56 | - | UPI SEMICONDUCTOR CORP | -55 °C | PLASTIC/EPOXY | SMALL OUTLINE, S-PDSO-F8 | SQUARE | SMALL OUTLINE | Contact Manufacturer | Yes | 46*32*22/1000 | EAR99 | MMCX-P (plug)/ SMA-J (jack) | - | - | DUAL | FLAT | NOT SPECIFIED | unknown | NOT SPECIFIED | S-PDSO-F8 | SINGLE WITH BUILT-IN DIODE | - | 50 Ohm | 150 ± 2 mm | ENHANCEMENT MODE | SWITCHING | N-CHANNEL | -55…+85 °C | 0.004 Ω | up to 6 (GSM/2G; 3G4 4G; 5G; 5.8G/433 MHz) GHz | 160 A | 30 V | 317 mJ | METAL-OXIDE SEMICONDUCTOR | 2.80 mm | - | - | - | - | - | ||
| QM3016M3 |
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