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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Capacitors series | Case - inch | Case - mm | Construction Features | Drain Current-Max (ID) | Gross Weight | Ihs Manufacturer | Kind of capacitor | Mounting | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | RoHS | Switching Scheme | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of capacitor | Tolerance | ECCN Code | Additional Feature | HTS Code | Capacitance | Terminal Position | Terminal Form | Depth | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Dielectric | Contact Resistance | Configuration | Insulation Resistance | Operating Mode | Case Connection | Switch Type | Transistor Application | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Operating Temperature Range | Continuous Drain Current (ID) | Rated Current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max (Abs) | Rated Voltage | Power Dissipation Ambient-Max | Height | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип2SK1280Anlielectronics Тип | Fuji |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 500 V | - | - | 18 A | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SK1280 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2SK1020Anlielectronics Тип | Fuji Electric Co Ltd |
Power Field-Effect Transistor, 30A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PL, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | KGM | 0603 | 1608 | horizontal position | 30 A | 0.40 | FUJI ELECTRIC CO LTD | MLCC | SMD | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3PL | - | OFF-(ON) | - | - | ceramic | ±5% | EAR99 | HIGH VOLTAGE | - | 270pF | SINGLE | THROUGH-HOLE | 4.7 (body) mm | unknown | 3 | R-PSFM-T3 | Not Qualified | C0G (NP0) | 50 mOhm max | SINGLE WITH BUILT-IN DIODE | 100 MOhm min | ENHANCEMENT MODE | - | DS Series Micro Switch, SMT | SWITCHING | - | N-CHANNEL | -10...+70 °C | - | 0.05 A | - | 0.25 Ω | 92 A | 500 V | METAL-OXIDE SEMICONDUCTOR | 300 W | 5 V | - | 2.0 (body) mm | 5.5 mm | ||
| 2SK1020 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2SK2255-01MRAnlielectronics Тип | Fuji Electric Co Ltd |
Power Field-Effect Transistor, 18A I(D), 250V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F15, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | - | - | - | 18 A | - | COLLMER SEMICONDUCTOR INC | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220F15 | - | - | 230 ns | 120 ns | - | - | EAR99 | AVALANCHE RATED | 8541.29.00.95 | - | SINGLE | THROUGH-HOLE | - | unknown | 3 | R-PSFM-T3 | Not Qualified | - | - | SINGLE | - | ENHANCEMENT MODE | ISOLATED | - | - | - | N-CHANNEL | - | - | - | TO-220AB | 0.18 Ω | - | 250 V | METAL-OXIDE SEMICONDUCTOR | - | - | 50 W | - | - | ||
| 2SK2255-01MR |
Индекс :
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