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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Category | Colour | Dielectric Strength | Drain Current-Max (ID) | Gross weight | Gross Weight | Heatsink shape | Ignition voltage | Ihs Manufacturer | Internal width | Lamp lifespan | Material finishing | Moisture Sensitivity Levels | Mounting | Nominal Current | Nominal Voltage | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transport packaging size/quantity | Transport Packaging Size/Quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of heatsink | JESD-609 Code | ECCN Code | Type | Resistance | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | Rated current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | 2nd Connector Number of Positions Loaded | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Dissipation Ambient-Max | Diameter | Height | Length | Width |
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  | Mfr. ТипAP6679GHAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 2 | SILICON | - | - | - | - | 75 A | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | ROHS COMPLIANT PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | TO-252 | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | GULL WING | - | - | compliant | - | 4 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | TO-252 | 0.009 Ω | 300 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| AP6679GH | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAPT10050JNAnlielectronics Тип | Advanced Power Technology |
Power Field-Effect Transistor, 20.5A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | 4 | SILICON | 1 | - | - | - | 20.5 A | - | - | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | ISOTOP-4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | Yes | - | - | 105 ns | 60 ns | - | - | EAR99 | - | - | - | - | 8541.29.00.95 | UPPER | UNSPECIFIED | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | UL RECOGNIZED | R-PUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | - | 0.5 Ω | 82 A | 1000 V | - | METAL-OXIDE SEMICONDUCTOR | 520 W | - | 350 pF | - | 520 W | - | - | - | - | ||
| APT10050JN | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAP6679GM-HFAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 14 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | - | - | - | - | 14 A | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | SOT | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | DUAL | GULL WING | - | - | compliant | - | 8 | - | R-PDSO-G8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | - | 0.009 Ω | 50 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| AP6679GM-HF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAP30T10GH-HFAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 19 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 2 | SILICON | 1 | - | - | - | 19 A | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | TO-252 | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | - | compliant | NOT SPECIFIED | 4 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | TO-252 | 0.055 Ω | 60 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| AP30T10GH-HF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипARF448BAnlielectronics Тип | Advanced Power Technology |
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | 1 | Climatic - 40/085/21 | - | 1500 (Phase-phase) / 2250 (Phase-ground) V | 15 A | - | - | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | - | - | 600 A | 250/440 (50/ 60 Hz) V | - | 150 °C | PLASTIC/EPOXY | TO-247, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | - | No | - | - | - | - | - | e0 | EAR99 | Three-phase network filter DL series | - | Tin/Lead (Sn/Pb) | HIGH RELIABILITY | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | TO-247AD | - | - | 450 V | - | METAL-OXIDE SEMICONDUCTOR | 230 W | - | - | VERY HIGH FREQUENCY BAND | - | - | - | - | - | ||
| ARF448B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипARF446Anlielectronics Тип | Advanced Power Technology |
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | 1 | - | - | - | 6.5 A | - | 2.36 | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | No | - | 48*32*27/3600 | - | - | - | e0 | EAR99 | - | - | Tin/Lead (Sn/Pb) | HIGH RELIABILITY | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | TO-247AD | - | - | 900 V | - | METAL-OXIDE SEMICONDUCTOR | 240 W | - | - | VERY HIGH FREQUENCY BAND | - | - | - | - | - | ||
| ARF446 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипARF460AAnlielectronics Тип | Advanced Power Technology |
Description: RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | 1 | - | - | - | 14 A | 0.35 | - | - | 55 (AC)/78 (DC) V | ADVANCED POWER TECHNOLOGY INC | - | ≥30000 hours | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | No | 42*28*23.5/30000 | - | - | - | - | e0 | EAR99 | miniature neon lamp | current-limiting - 150 (110 V); 560 (220 V) kOhm | Tin/Lead (Sn/Pb) | - | - | SINGLE | THROUGH-HOLE | - | 13 mm | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | 0.35 mA | TO-247AD | - | - | 500 V | - | METAL-OXIDE SEMICONDUCTOR | 250 W | - | - | VERY HIGH FREQUENCY BAND | - | 5 mm | - | - | - | ||
| ARF460A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAP9578GHAnlielectronics Тип | Advanced Power Electronics Corp |
Description: TRANSISTOR 10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 2 | SILICON | 1 | - | - | - | 10 A | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | TO-252 | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | GULL WING | - | - | compliant | - | 4 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | TO-252 | 0.16 Ω | 45 A | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| AP9578GH | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипARF1510Anlielectronics Тип | Advanced Power Technology |
RF Power Field-Effect Transistor, 4-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 10 | SILICON | 4 | - | - | - | 9 A | - | - | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | - | - | - | - | - | - | UNSPECIFIED | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | DUAL | FLAT | - | - | unknown | - | - | - | R-XDSO-F10 | Not Qualified | BRIDGE, 4 ELEMENTS | ENHANCEMENT MODE | ISOLATED | AMPLIFIER | N-CHANNEL | - | - | - | - | 1000 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | VERY HIGH FREQUENCY BAND | - | - | - | - | - | ||
| ARF1510 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAP9971GMAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 5 A, 60 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | aluminium | 8 | SILICON | 2 | - | aluminium | - | 5 A | 700 g | - | U | - | ADVANCED POWER ELECTRONICS CORP | 13.3mm | - | raw | - | for back plate | - | - | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | SOT | - | - | - | - | - | extruded | - | EAR99 | - | - | - | ULTRA LOW RESISTANCE | - | DUAL | GULL WING | - | - | compliant | - | 8 | - | R-PDSO-G8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | 0.05 Ω | 30 A | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | LED | - | - | - | - | 19mm | 50mm | 26.5mm | ||
| AP9971GM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAP4226GM-HFAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR POWER, FET, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | - | - | - | - | 8.2 A | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | 3 | - | - | - | 2 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | Yes | - | - | - | - | - | - | EAR99 | - | - | - | ULTRA-LOW RESISTANCE | - | DUAL | GULL WING | - | - | compliant | - | - | - | R-PDSO-G8 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | 0.018 Ω | 30 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| AP4226GM-HF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAP95T07AGP-HFAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 120 A, 75 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | - | - | - | - | 120 A | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | - | 1 | 175 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | TO-220AB | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | - | compliant | NOT SPECIFIED | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | TO-220AB | 0.0048 Ω | 680 A | 75 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| AP95T07AGP-HF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAP9581GP-HFAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 95 A, 80 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT , TO-220, 3 PIN, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | - | - | - | - | 95 A | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | 1 | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | TO-220AB | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | 3 | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | TO-220AB | 0.015 Ω | 300 A | 80 V | - | METAL-OXIDE SEMICONDUCTOR | 250 W | - | - | - | - | - | - | - | - | ||
| AP9581GP-HF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAP0904GMT-HFAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 17.5 A, 40 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | - | - | - | - | 17.5 A | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | 1 | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F8 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | - | DUAL | FLAT | - | - | compliant | - | 8 | - | R-PDSO-F8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | 0.0095 Ω | 160 A | 40 V | 28.8 mJ | METAL-OXIDE SEMICONDUCTOR | 34.7 W | - | - | - | - | - | - | - | - | ||
| AP0904GMT-HF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAP75N07GWAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 90 A, 75 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, TO-3P, 3 PIN, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | - | - | - | - | 90 A | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | ROHS COMPLIANT, TO-3P, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | 0.011 Ω | 360 A | 75 V | 450 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| AP75N07GW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAP9971AGJAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 22 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | - | - | - | - | 22 A | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Contact Manufacturer | TO-251 | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | 3 | - | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | TO-251 | 0.036 Ω | 80 A | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| AP9971AGJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAP9418GMAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 35 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | - | - | - | - | - | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOT | - | - | - | - | - | - | - | EAR99 | - | - | - | ULTRA-LOW RESISTANCE | - | DUAL | GULL WING | - | - | compliant | - | 8 | - | R-PDSO-G8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | 0.004 Ω | 60 A | 35 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| AP9418GM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAP9T18GEJAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 40 A, 20 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | - | - | - | - | 40 A | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Contact Manufacturer | TO-251 | - | - | - | - | - | - | - | EAR99 | - | - | - | ULTRA-LOW RESISTANCE | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | 3 | - | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | TO-251 | 0.014 Ω | 160 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| AP9T18GEJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAP95T10AGI-HFAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR 58 A, 100 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | - | - | - | - | 58 A | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | TO-220AB | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | 3 | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | TO-220AB | 0.006 Ω | 200 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| AP95T10AGI-HF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAP2340GN-HFAnlielectronics Тип | Advanced Power Electronics Corp |
Description: TRANSISTOR POWER, FET, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 3 | SILICON | - | - | - | - | 3.4 A | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | DUAL | GULL WING | - | - | compliant | - | - | - | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | 0.08 Ω | 12 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| AP2340GN-HF |
Индекс :
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