- Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - Special Purpose
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Weight | Number of Terminals | Transistor Element Material | Exterior Housing Material | Analog | Capacitors series | Case - inch | Case - mm | Drain Current-Max (ID) | Equivalent | Execution | Gross weight | Gross Weight | Ihs Manufacturer | Kind of capacitor | Melting temperature | Melting Temperature | Moisture Sensitivity Levels | Mounting | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Shipping Package size/quantity | Soldering temperature | Soldering Temperature | Transport packaging size/quantity | Type of capacitor | Operating temperature | Packaging | Tolerance | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Capacitance | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Dielectric | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Design | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Power Dissipation Ambient-Max | Saturation Current | Operating voltage | Diameter |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIRFS4410ZTRRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 2 | SILICON | - | - | - | - | - | 97 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | 1 | - | 1 | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | D2PAK | Yes | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | - | - | SINGLE | GULL WING | - | compliant | - | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-263AB | 0.009 Ω | - | 390 A | 100 V | 242 mJ | METAL-OXIDE SEMICONDUCTOR | 230 W | - | - | - | - | ||
| IRFS4410ZTRRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF9130Anlielectronics Тип | International Rectifier |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF9130 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF7303PBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | 2 | - | - | - | - | 4.9 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | LEAD FREE, SO-8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | LOGIC LEVEL COMPATIBLE | - | - | DUAL | GULL WING | 260 | unknown | 30 | 8 | R-PDSO-G8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | MS-012AA | 0.05 Ω | - | 20 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 1.4 W | - | 1 | - | - | ||
| IRF7303PBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF7805APBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | - | - | - | - | - | 13 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | 1 | - | 1 | 150 °C | PLASTIC/EPOXY | LEAD FREE, SO-8 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | - | - | DUAL | GULL WING | 260 | compliant | 30 | 8 | R-PDSO-G8 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | MS-012AA | 0.011 Ω | - | 100 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | - | ||
| IRF7805APBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRLS4030Anlielectronics Тип | International Rectifier |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRLS4030 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRLR8113Anlielectronics Тип | International Rectifier |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRLR8113 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFR3504Anlielectronics Тип | International Rectifier |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRFR3504 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBD137-16Anlielectronics Тип | WEITRON INTERNATIONAL CO., LTD. |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | WEITRON TECHNOLOGY CO LTD | - | - | - | - | - | - | - | - | , | - | - | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BD137-16 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFH7932TRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 3 | SILICON | 1 | - | - | - | - | 24 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | RECTANGULAR | SMALL OUTLINE | Transferred | QFN | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | - | - | DUAL | NO LEAD | 260 | compliant | 30 | 8 | R-PDSO-N3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0033 Ω | - | 192 A | 30 V | 14 mJ | METAL-OXIDE SEMICONDUCTOR | 3.4 W | - | - | - | - | ||
| IRFH7932TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF7343TRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | 2 | - | - | - | - | 4.7 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | HIGH RELIABILITY | - | - | DUAL | GULL WING | 260 | compliant | 30 | - | R-PDSO-G8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL AND P-CHANNEL | MS-012AA | 0.05 Ω | - | 38 A | 55 V | 72 mJ | METAL-OXIDE SEMICONDUCTOR | 2 W | - | 1 | - | - | ||
| IRF7343TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFS3207ZTRLPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 2 | SILICON | 1 | - | - | - | - | 120 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | 175 °C | PLASTIC/EPOXY | LEAD FREE, D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | D2PAK | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN OVER NICKEL | - | - | - | SINGLE | GULL WING | - | compliant | - | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-263AB | 0.0041 Ω | - | 670 A | 75 V | 170 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W | - | 1 | - | - | ||
| IRFS3207ZTRLPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRL3713STRLPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 75A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 0.4 kg | 2 | SILICON | 1 | POS40 | KGM | 1206 | 3216 | 75 A | - | tube | 415.00 | - | INTERNATIONAL RECTIFIER CORP | MLCC | 183...240 °C | - | - | SMD | - | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | Yes | - | 285...330 °C | - | 29*25*40/30 | ceramic | -55...125°C | coil | ±5% | e3 | Yes | EAR99 | Soft tin-lead solder Sn/Pb with flux | MATTE TIN OVER NICKEL | - | - | 10pF | SINGLE | GULL WING | - | compliant | - | 3 | R-PSSO-G2 | Not Qualified | C0G (NP0) | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.003 Ω | - | 1040 A | 30 V | 1530 mJ | METAL-OXIDE SEMICONDUCTOR | 330 W | - | 1 | 1kV | 1.5 mm | ||
| IRL3713STRLPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF7101TRPBFAnlielectronics Тип | International Rectifier |
Description: Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 0.5 kg | 8 | SILICON | 2 | - | - | - | - | 3.5 A | POS40 | - | - | 517.00 | INTERNATIONAL RECTIFIER CORP | - | - | 183...240 °C | - | - | - | 150 °C | PLASTIC/EPOXY | LEAD FREE, SO-8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT | Yes | 28*25*20/50 | - | 285...330 °C | - | - | - | coil | - | e3 | Yes | EAR99 | Soft lead-tin solder Sn/Pb with flux | MATTE TIN | - | - | - | DUAL | GULL WING | 260 | unknown | 30 | 8 | R-PDSO-G8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.1 Ω | tube | 14 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 2 W | - | 1 | - | 1.0 mm | ||
| IRF7101TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF7807VD1TRPBFAnlielectronics Тип | International Rectifier |
Small Signal Field-Effect Transistor, 8.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | 1 | - | KGM | 1206 | 3216 | 8.3 A | - | - | 514.50 | - | INTERNATIONAL RECTIFIER CORP | MLCC | - | - | - | SMD | - | 150 °C | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Yes | - | - | - | 43*28.5*19.5/28 | ceramic | -55...125°C | - | ±20% | e3 | Yes | EAR99 | - | MATTE TIN | - | - | 22nF | DUAL | GULL WING | 260 | unknown | 30 | 8 | R-PDSO-G8 | Not Qualified | X7R | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | MS-012AA | 0.025 Ω | - | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | 1 | 50V | - | ||
| IRF7807VD1TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRLML5203GTRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 3 | SILICON | 1 | - | - | - | - | 3 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | - | - | DUAL | GULL WING | 260 | unknown | 30 | 3 | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | TO-236AB | 0.098 Ω | - | 24 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 1.25 W | - | 1 | - | - | ||
| IRLML5203GTRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFB3407ZPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | 1 | - | - | - | - | 120 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | 175 °C | - | , | - | - | Transferred | - | Yes | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | N-CHANNEL | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 230 W | - | - | - | - | ||
| IRFB3407ZPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFS38N20DTRLPAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 2 | SILICON | 1 | - | - | - | - | 43 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | 175 °C | PLASTIC/EPOXY | LEAD FREE, PLASTIC, D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | D2PAK | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | Matte Tin (Sn) - with Nickel (Ni) barrier | - | 8541.29.00.95 | - | SINGLE | GULL WING | 260 | compliant | 30 | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-263AB | 0.054 Ω | - | 180 A | 200 V | 460 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W | - | 1 | - | - | ||
| IRFS38N20DTRLP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF7317TRPBFAnlielectronics Тип | International Rectifier |
Description: Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | 2 | - | - | - | - | 6.6 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | AVALANCHE RATED | 8541.29.00.95 | - | DUAL | GULL WING | 260 | compliant | 30 | - | R-PDSO-G8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL AND P-CHANNEL | MS-012AA | 0.029 Ω | - | 26 A | 20 V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | 2 W | 2 W | 1 | - | - | ||
| IRF7317TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRL2203NSTRLPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 2 | SILICON | 1 | - | - | - | - | 75 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | 175 °C | PLASTIC/EPOXY | LEAD FREE, PLASTIC, D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | D2PAK | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - | - | SINGLE | GULL WING | 260 | not_compliant | 30 | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-263AB | 0.007 Ω | - | 400 A | 30 V | 290 mJ | METAL-OXIDE SEMICONDUCTOR | 180 W | - | 1 | - | - | ||
| IRL2203NSTRLPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF7313TRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | 2 | - | - | - | - | 6.5 A | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | Yes | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | HIGH RELIABILITY, AVALANCHE RATED | 8541.29.00.95 | - | DUAL | GULL WING | 260 | compliant | 30 | - | R-PDSO-G8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | MS-012AA | 0.029 Ω | - | 30 A | 30 V | 82 mJ | METAL-OXIDE SEMICONDUCTOR | 2 W | 2 W | 1 | - | - | ||
| IRF7313TRPBF |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ