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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Number of Terminals | Transistor Element Material | Exterior Housing Material | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Turn Off Delay Time | Voltage Rated | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | Current Rating (Amps) | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Turn On Delay Time | Transistor Application | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Transistor Type | Continuous Drain Current (ID) | JEDEC-95 Code | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max (Abs) | Drain to Source Resistance | Highest Frequency Band | Radiation Hardening | RoHS Status | Lead Free |
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  | Mfr. ТипIRFZ48Anlielectronics Тип | Microsemi Corporation |
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | NO | - | - | 3 | SILICON | 1 | 50 A | MICROSEMI CORP | - | - | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | e0 | - | - | - | EAR99 | TIN LEAD | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | - | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | - | - | - | N-CHANNEL | - | - | - | - | 0.028 Ω | 60 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| IRFZ48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипARF463AP1Anlielectronics Тип | Microsemi Corporation |
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | NO | - | - | 3 | SILICON | 1 | 9 A | MICROSEMI CORP | - | 150 °C | PLASTIC/EPOXY | TO-247, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | TO-247AD | No | - | - | - | - | e0 | No | - | - | EAR99 | TIN LEAD | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | - | AMPLIFIER | - | - | N-CHANNEL | - | - | - | TO-247AD | - | 500 V | METAL-OXIDE SEMICONDUCTOR | 180 W | - | VERY HIGH FREQUENCY BAND | - | - | - | ||
| ARF463AP1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипARF461DAnlielectronics Тип | Microsemi Corporation |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | NO | - | - | 3 | - | 1 | 6.5 A | MICROSEMI CORP | - | 150 °C | PLASTIC/EPOXY | TO-247, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | TO-247AD | No | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE | - | - | - | - | - | - | N-CHANNEL | - | - | - | TO-247AD | - | - | METAL-OXIDE SEMICONDUCTOR | 250 W | - | - | - | - | - | ||
| ARF461D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBYI-1FAnlielectronics Тип | Microsemi Corporation |
IC BYISTOR FOR PWR AMP 55GV
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Stud | Stud Mount | 55FT | - | 55 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 55V | Bulk | 1998 | - | - | Obsolete | 1 (Unlimited) | EAR99 | - | - | - | Linear Amplifier Bias | - | - | - | - | - | 700mA | - | - | - | - | - | - | - | - | - | - | - | - | - | BYSISTOR | - | - | - | - | - | - | - | - | - | RoHS Compliant | - | ||
| BYI-1F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTMC120HRM40CT3GAnlielectronics Тип | Microsemi Corporation |
Phase leg 1200V 34mOhm 179nC Dual Common Emitter Power Module MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Chassis Mount, Through Hole | Chassis Mount | SP3 | - | 3 | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | 200 ns | 1200V 1.2kV | Bulk | 1997 | - | - | Obsolete | 1 (Unlimited) | EAR99 | - | 175°C | -40°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 110 ns | - | 45ns | 1.2kV | - | 40 ns | 2 N Channel (Phase Leg + Dual Common Emitter) | 64A | - | - | - | METAL-OXIDE SEMICONDUCTOR | 240W | 34mOhm | - | - | RoHS Compliant | Lead Free | ||
| APTMC120HRM40CT3G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBYI-1Anlielectronics Тип | Microsemi Corporation |
IC BYISTOR FOR PWR AMP 55FV
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | IN PRODUCTION (Last Updated: 1 month ago) | Stud | Stud Mount | 55FT | - | 55 | 55FT | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 55V | Bulk | 1998 | - | - | Obsolete | 1 (Unlimited) | - | - | 150°C | -65°C | Linear Amplifier Bias | 700mA | - | - | - | - | 700mA | - | - | - | - | - | - | - | - | - | - | - | - | - | BYSISTOR | - | - | - | - | - | - | - | - | No | RoHS Compliant | - | ||
| BYI-1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBYI-1TAnlielectronics Тип | Microsemi Corporation |
IC BYISTOR FOR PWR AMP 55LU
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 22 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Stud | Stud Mount | 55FT | - | 55 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 55V | Bulk | 2000 | - | - | Obsolete | 1 (Unlimited) | EAR99 | - | 150°C | -65°C | Linear Amplifier Bias | - | - | - | - | - | 700mA | - | - | - | - | - | - | - | - | - | - | - | - | - | BYSISTOR | - | - | - | - | - | - | - | - | - | RoHS Compliant | - | ||
| BYI-1T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTMC120HR11CT3GAnlielectronics Тип | Microsemi Corporation |
Phase leg 1200V 98mOhm 49nC Dual Common Emitter Power Module MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Chassis Mount, Through Hole | Chassis Mount | SP3 | - | 3 | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | 200 ns | 1200V 1.2kV | Bulk | - | - | - | Obsolete | 1 (Unlimited) | EAR99 | - | 175°C | -40°C | General Purpose | - | - | - | - | - | 26A | - | - | - | - | - | - | - | 110 ns | - | 45ns | 1.2kV | - | 40 ns | 2 N Channel (Phase Leg + Dual Common Emitter) | 24A | - | - | - | METAL-OXIDE SEMICONDUCTOR | 100W | 98mOhm | - | - | RoHS Compliant | Lead Free | ||
| APTMC120HR11CT3G |
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