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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Contact plating | Surface Mount | Number of pins | Number of Terminals | Transistor Element Material | Exterior Housing Material | Cable | Connector | Connector pinout layout | Contact material | Contacts pitch | Drain Current-Max (ID) | Electrical mounting | For Use With/Related Products | Gross weight | Ihs Manufacturer | Kind of connector | Moisture Sensitivity Levels | Name | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Row pitch | Spatial orientation | Teral type | Transport packaging size/quantity | Type of connector | Operating temperature | Packaging | Pbfree Code | Part Status | ECCN Code | Connector type | Type | Color | Additional Feature | HTS Code | Terminal Position | Terminal Form | Shielding | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | Operating temperature range | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max (Abs) | Rated voltage | Conductor diameter | Highest Frequency Band | Profile | Power Dissipation Ambient-Max | Features | Standard | Power Gain-Min (Gp) | Height | Width | Plating thickness | Flammability rating |
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  | Mfr. ТипMGF1923-01Anlielectronics Тип | Mitsubishi Electric |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 4 | GALLIUM ARSENIDE | - | - | - | - | - | - | 0.08 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | DISK BUTTON, O-CRDB-F4 | ROUND | DISK BUTTON | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | LOW NOISE | - | RADIAL | FLAT | - | - | - | unknown | - | - | - | O-CRDB-F4 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | - | METAL SEMICONDUCTOR | - | - | - | KU BAND | - | - | - | - | 11.7 dB | - | - | - | - | ||
| MGF1923-01 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMGFC47B3538BAnlielectronics Тип | Mitsubishi Electric |
RF Power Field-Effect Transistor, N-Channel
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | 3 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | - | 175 °C | - | , | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.29.00.95 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | 115 W | - | - | - | - | - | - | - | ||
| MGFC47B3538B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFS1UM-18AAnlielectronics Тип | Mitsubishi Electric |
Description: Power Field-Effect Transistor, 1A I(D), 900V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | - | 1 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 15 Ω | 3 A | 900 V | METAL-OXIDE SEMICONDUCTOR | 65 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FS1UM-18A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMGFC45V4450AAnlielectronics Тип | Mitsubishi Electric |
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | 8 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | HIGH RELIABILITY | 8541.29.00.75 | DUAL | FLAT | - | - | - | unknown | - | - | 2 | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 10 V | JUNCTION | - | - | - | C BAND | - | 150 W | - | - | - | - | - | - | - | ||
| MGFC45V4450A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMGFC36V4450A-51Anlielectronics Тип | Mitsubishi Electric |
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | 3.75 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.29.00.75 | DUAL | FLAT | - | - | - | unknown | - | - | 2 | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | - | JUNCTION | - | - | - | C BAND | - | 25 W | - | - | 9 dB | - | - | - | - | ||
| MGFC36V4450A-51 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFS12KMA-4AAnlielectronics Тип | Mitsubishi Electric |
Power Field-Effect Transistor, 12A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | - | 12 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.4 Ω | 36 A | 200 V | METAL-OXIDE SEMICONDUCTOR | 32 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FS12KMA-4A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMGFS45V2527AAnlielectronics Тип | Mitsubishi Electric |
Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-51, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2 | GALLIUM ARSENIDE | 1 | 4x2 UTP Cat 5e | - | - | bronze nickel plated tinned | - | 6.5 A | - | Cable Ties 50-250 lb | 9.85 | MITSUBISHI ELECTRIC CORP | - | - | Keystone Jack module | - | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | punch-down IDC type 110min | 42*28*18.5/200 | - | - | Box | - | Active | EAR99 | RJ45 8P8C 180 deg. | Gun | white/gray | HIGH RELIABILITY | 8541.29.00.75 | DUAL | FLAT | none | - | 30 mm | unknown | - | - | 3 | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | -40...+70 °C | - | - | 10 V | JUNCTION | - | - | 26-22AWG | S BAND | - | 88 W | Adjustable Tension, Ergonomic, Flush Cut | TIA/ EIA 568A/ 568B ISO/ IEC11801 | - | 23 (full) mm | 17 mm | - | - | ||
| MGFS45V2527A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMGFC40V4450Anlielectronics Тип | Mitsubishi Electric |
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | 2.4 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | HIGH RELIABILITY | 8541.29.00.75 | DUAL | FLAT | - | - | - | unknown | - | - | 2 | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 10 V | JUNCTION | - | - | - | C BAND | - | 43 W | - | - | - | - | - | - | - | ||
| MGFC40V4450 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRD06HHF1-101Anlielectronics Тип | Mitsubishi Electric |
RF Power Field-Effect Transistor, 1-Element, High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | - | 3 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | Yes | - | - | - | - | - | - | - | Yes | - | EAR99 | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 50 V | METAL-OXIDE SEMICONDUCTOR | 27.8 W | - | - | HIGH FREQUENCY BAND | - | - | - | - | - | - | - | - | - | ||
| RD06HHF1-101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFS10KM-9Anlielectronics Тип | Mitsubishi Electric |
Power Field-Effect Transistor, 10A I(D), 450V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | - | 10 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.73 Ω | 30 A | 450 V | METAL-OXIDE SEMICONDUCTOR | 35 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FS10KM-9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMGFX39V0717Anlielectronics Тип | Mitsubishi Electric |
Description: RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | 2.4 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | HIGH RELIABILITY | 8541.29.00.75 | DUAL | FLAT | - | - | - | unknown | - | - | 2 | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 10 V | JUNCTION | - | - | - | X BAND | - | 43 W | - | - | - | - | - | - | - | ||
| MGFX39V0717 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRD01MUS1-101Anlielectronics Тип | Mitsubishi Electric |
Description: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | - | - | - | - | - | - | 0.6 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | 1 | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | Yes | - | - | - | - | - | - | - | Yes | - | EAR99 | - | - | - | - | - | SINGLE | FLAT | - | 225 | - | unknown | - | - | 3 | R-PSSO-F3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | AMPLIFIER | N-CHANNEL | - | - | - | 30 V | METAL-OXIDE SEMICONDUCTOR | 3.6 W | - | - | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | - | - | - | - | ||
| RD01MUS1-101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRD04HMS2Anlielectronics Тип | Mitsubishi Electric |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2 | SILICON | 1 | - | - | - | - | - | 3 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | - | 150 °C | PLASTIC/EPOXY | FLATPACK, R-PQFP-N2 | RECTANGULAR | FLATPACK | Active | - | Yes | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | QUAD | NO LEAD | - | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | 3 | R-PQFP-N2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 40 V | METAL-OXIDE SEMICONDUCTOR | 50 W | - | - | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | - | - | - | - | ||
| RD04HMS2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFS50KMJ-03FAnlielectronics Тип | Mitsubishi Electric |
Power Field-Effect Transistor, 50A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | - | 50 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220FN | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | - | unknown | - | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.019 Ω | 200 A | 30 V | METAL-OXIDE SEMICONDUCTOR | 25 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FS50KMJ-03F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2SJ145Anlielectronics Тип | Mitsubishi Electric |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SC-70, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | - | - | - | - | - | - | - | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SC-70 | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | DUAL | GULL WING | - | - | - | unknown | - | - | 3 | R-PDSO-G3 | Not Qualified | SINGLE | DEPLETION MODE | - | SWITCHING | P-CHANNEL | - | 220 Ω | - | - | JUNCTION | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SJ145 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFS10VS-14AAnlielectronics Тип | Mitsubishi Electric |
Power Field-Effect Transistor, 10A I(D), 700V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2 | SILICON | - | - | - | - | - | - | 10 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | GULL WING | - | - | - | unknown | - | - | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 1.3 Ω | 30 A | 700 V | METAL-OXIDE SEMICONDUCTOR | 150 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FS10VS-14A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRD00HVS1Anlielectronics Тип | Mitsubishi Electric |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | - | - | - | - | - | - | 0.2 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | FLAT | - | - | - | unknown | - | - | 3 | R-PSSO-F3 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 30 V | METAL-OXIDE SEMICONDUCTOR | 0.8 W | - | - | ULTRA HIGH FREQUENCY BAND | - | - | - | - | 20 dB | - | - | - | - | ||
| RD00HVS1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMGFC39V6472AAnlielectronics Тип | Mitsubishi Electric |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | - | 2.4 A | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | HIGH RELIABILITY | 8541.29.00.75 | DUAL | FLAT | - | - | - | unknown | - | - | 2 | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 10 V | JUNCTION | - | - | - | C BAND | - | 42.8 W | - | - | 7 dB | - | - | - | - | ||
| MGFC39V6472A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRD02MUS1BAnlielectronics Тип | Mitsubishi Electric |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
Сборник данных
Сравнение
| Min.:1 Mult.:1 | gold-plated | YES | 90 | 3 | SILICON | 1 | - | socket | 2x45 | - | 2.54mm | 1.5 A | THT | - | 4.05 g | MITSUBISHI ELECTRIC CORP | female | - | - | - | - | UNSPECIFIED | CHIP CARRIER, R-XQCC-N3 | RECTANGULAR | CHIP CARRIER | Obsolete | - | - | 2.54mm | straight | - | - | pin strips | -40...163°C | - | - | - | EAR99 | - | - | - | - | - | QUAD | NO LEAD | - | - | - | unknown | 1.5A | - | 10 | R-XQCC-N3 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 30 V | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | ULTRA HIGH FREQUENCY BAND | beryllium copper | - | - | - | - | - | - | 0.254µm | UL94V-0 | ||
| RD02MUS1B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRD35HUF2Anlielectronics Тип | Mitsubishi Electric |
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | gold-plated | YES | 9 | 8 | SILICON | 2 | - | socket | 1x9 | - | 2.54mm | 10 A | THT | - | 0.34 g | MITSUBISHI ELECTRIC CORP | female | - | - | - | - | CERAMIC, METAL-SEALED COFIRED | ROHS COMPLIANT PACKAGE-8 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | straight | - | - | pin strips | -40...163°C | - | - | - | EAR99 | - | - | - | - | - | DUAL | FLAT | - | - | - | unknown | 1.5A | - | 8 | R-CDFM-F8 | - | COMMON SOURCE, 2 ELEMENTS | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 40 V | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | ULTRA HIGH FREQUENCY BAND | beryllium copper | - | - | - | - | - | - | 0.254µm | UL94V-0 | ||
| RD35HUF2 |
Индекс :
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