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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Material | Housing material | Housing Material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Application Area | Capacitors series | Case | Case - inch | Case - mm | Diameter of the protected wire (cable) | Drain Current-Max (ID) | Emitter type | Expansion range | Gross weight | Gross Weight | Ihs Manufacturer | Indicator type | Kind of capacitor | Kind of memory | Kind of package | Manufacturer Package Code | Memory | Memory organisation | Moisture Sensitivity Levels | Mounting | Mounting diameter | Mounting Flanges | Nominal current | Nominal voltage | Number of Elements | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Teral type | Transport package size/quantity | Transport packaging size/quantity | Type of capacitor | Type of integrated circuit | Wire length | Operating temperature | Operating Temperature | Packaging | Tolerance | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Color | Additional Feature | Capacitance | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Dielectric | Configuration | Operating Mode | Case Connection | Clock frequency | Transistor Application | Number of Inputs | Fuse Type | Polarity/Channel Type | Rated Current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Rated Voltage | Feedback Cap-Max (Crss) | Saturation Current | Features | Operating voltage | Diameter | Height | Width | Wall thickness |
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  | Mfr. ТипFDC645NAnlielectronics Тип | Rochester Electronics LLC |
5.5mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | 6 | SILICON | - | - | - | - | - | - | - | 0.0055 A | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | 1 | - | - | - | - | - | 1 | PLASTIC/EPOXY | SUPERSOT-6 | RECTANGULAR | SMALL OUTLINE | Active | SOT | Yes | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | - | - | - | DUAL | GULL WING | 260 | - | unknown | 30 | 6 | R-PDSO-G6 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | - | N-CHANNEL | - | - | 0.03 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| FDC645N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBSO615NGAnlielectronics Тип | Rochester Electronics LLC |
Description: 2.6A, 60V, 0.15ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | 8 | SILICON | - | - | - | - | - | - | - | 2.6 A | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | NOT SPECIFIED | - | - | - | - | - | 2 | PLASTIC/EPOXY | ROHS COMPLIANT, SO-8 | RECTANGULAR | SMALL OUTLINE | Active | SOT | Yes | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | - | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | 260 | - | unknown | NOT SPECIFIED | 8 | R-PDSO-G8 | COMMERCIAL | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | - | - | N-CHANNEL | - | - | 0.15 Ω | 10.4 A | 60 V | 60 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| BSO615NG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFQA9N90CAnlielectronics Тип | Rochester Electronics LLC |
9A, 900V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | 3 | SILICON | - | - | - | - | - | - | - | 9 A | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | NOT APPLICABLE | - | - | - | - | - | 1 | PLASTIC/EPOXY | TO-3P, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-3P | Yes | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | - | - | - | SINGLE | THROUGH-HOLE | NOT APPLICABLE | - | unknown | NOT APPLICABLE | 3 | R-PSFM-T3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | - | N-CHANNEL | - | - | 1.4 Ω | 36 A | 900 V | 900 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| FQA9N90C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF9130Anlielectronics Тип | Rochester Electronics LLC |
11A, 100V, 0.35ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | 2 | SILICON | - | - | - | - | - | - | - | 11 A | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | NOT SPECIFIED | - | - | - | - | - | 1 | METAL | HERMETIC SEALED, MODIFIED TO-3, 2 PIN | ROUND | FLANGE MOUNT | Active | TO-3 | No | - | - | - | - | - | - | - | - | - | - | e0 | No | - | - | TIN LEAD | - | - | - | BOTTOM | PIN/PEG | NOT SPECIFIED | - | unknown | NOT SPECIFIED | 2 | O-MBFM-P2 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | P-CHANNEL | - | TO-204AA | 0.35 Ω | 50 A | 100 V | 81 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| IRF9130 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFQPF8N60CAnlielectronics Тип | Rochester Electronics LLC |
7.5A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | 7.5 A | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | LEAD FREE, TO-220F, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | Yes | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | - | FAST SWITCHING | - | SINGLE | THROUGH-HOLE | NOT APPLICABLE | - | unknown | NOT APPLICABLE | 3 | R-PSFM-T3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | - | SWITCHING | - | - | N-CHANNEL | - | TO-220AB | 1.2 Ω | 30 A | 600 V | 230 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | NOT APPLICABLE | - | - | - | - | - | - | ||
| FQPF8N60C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDP10N60NZAnlielectronics Тип | Rochester Electronics LLC |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FDP10N60NZ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFQPF10N60CAnlielectronics Тип | Rochester Electronics LLC |
Description: 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | 3 | SILICON | - | - | - | - | - | - | - | 9.5 A | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | NOT APPLICABLE | - | - | - | - | - | 1 | PLASTIC/EPOXY | LEAD FREE, TO-220F, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | Yes | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | - | FAST SWITCHING | - | SINGLE | THROUGH-HOLE | NOT APPLICABLE | - | unknown | NOT APPLICABLE | 3 | R-PSFM-T3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | - | SWITCHING | - | - | N-CHANNEL | - | TO-220AB | 0.73 Ω | 38 A | 600 V | 700 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| FQPF10N60C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDP100N10Anlielectronics Тип | Rochester Electronics LLC |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| FDP100N10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFP9140Anlielectronics Тип | Rochester Electronics LLC |
19A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | 3 | SILICON | 1 | - | - | FBGA96 | - | - | - | 19 A | - | - | 0.5 g | - | ROCHESTER ELECTRONICS LLC | - | - | DDR4, | reel | - | 8Gb SDRAM | 512Mx16bit | - | SMD | - | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | No | - | - | - | - | DRAM memory | - | 0...95°C | - | - | - | e0 | No | - | - | TIN LEAD | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | R-PSFM-T3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | 1.6GHz | SWITCHING | - | - | P-CHANNEL | - | TO-247 | 0.2 Ω | 76 A | 100 V | 960 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | NOT SPECIFIED | - | - | - | - | - | - | ||
| IRFP9140 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDS6912AAnlielectronics Тип | Rochester Electronics LLC |
6000mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | nickel-plated brass | - | 8 | SILICON | 2 | - | - | - | - | - | - | 6 A | point flat | - | 19.13 | - | ROCHESTER ELECTRONICS LLC | GQ19 series antivandal indicator | - | - | - | - | - | - | - | - | 19 mm | - | 15 mA | 3-36 V | - | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Active | SOT | Yes | 2S (screw)min | - | 62*27.5*28/150 | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | blue | LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | 260 | - | unknown | 30 | 8 | R-PDSO-G8 | COMMERCIAL | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | - | N-CHANNEL | - | - | 0.028 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | 1 | - | - | - | - | - | - | ||
| FDS6912A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDMS7660Anlielectronics Тип | Rochester Electronics LLC |
25A, 30V, 0.0028ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | 25 A | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | ROHS COMPLIANT, POWER 56, 8 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | - | - | - | DUAL | NO LEAD | 260 | - | unknown | 30 | 240 | R-PDSO-N5 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | N-CHANNEL | - | MO-240AA | 0.0028 Ω | 150 A | 30 V | 128 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | 1 | - | - | - | - | - | - | ||
| FDMS7660 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDC6318PAnlielectronics Тип | Rochester Electronics LLC |
2500mA, 12V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | 6 | SILICON | 2 | - | - | - | - | - | 7 mm | 2.5 A | - | 7-18 mm | 884.00 | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | SUPERSOT-6 | RECTANGULAR | SMALL OUTLINE | Active | SOT | Yes | - | - | 49*34*49/25 | - | - | - | - | - | 100 m coil | - | e3 | Yes | - | Black PET protective braiding | MATTE TIN | - | - | - | DUAL | GULL WING | 260 | - | unknown | 30 | 6 | R-PDSO-G6 | COMMERCIAL | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | - | P-CHANNEL | - | - | 0.09 Ω | - | 12 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | 1 | - | - | 10.0 mm | - | - | 0.5 mm | ||
| FDC6318P | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDS6670AAnlielectronics Тип | Rochester Electronics LLC |
Small Signal Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | KGM | - | 1210 | 3225 | - | - | - | - | 0.03 g | - | ROCHESTER ELECTRONICS LLC | - | MLCC | - | - | - | - | - | - | SMD | - | - | - | - | - | - | - | - | - | Active | SOT | Yes | - | - | - | ceramic | - | - | -55...125°C | - | - | ±10% | - | Yes | EAR99 | - | - | - | - | 1nF | - | - | - | - | unknown | - | 8 | - | - | C0G (NP0) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1kV | - | - | - | - | ||
| FDS6670A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDD8444Anlielectronics Тип | Rochester Electronics LLC |
Description: 155A, 40V, 5.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, TO-252, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | 155 A | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | ROHS COMPLIANT, TO-252, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | TO-252AA | Yes | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | - | - | - | SINGLE | GULL WING | 260 | - | unknown | 30 | 4 | R-PSSO-G2 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | N-CHANNEL | - | TO-252AA | 5.2 Ω | - | 40 V | 535 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | 1 | - | - | - | - | - | - | ||
| FDD8444 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDS4897CAnlielectronics Тип | Rochester Electronics LLC |
6200mA, 40V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | 8 | SILICON | 2 | - | - | - | - | - | - | 6.2 A | - | - | - | 0.71 | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | ROHS COMPLIANT, SO-8 | RECTANGULAR | SMALL OUTLINE | Active | SOT | Yes | - | 48*31.5*27/19950 | - | - | - | - | - | -40 …+125 °C | - | - | e3 | Yes | - | - | MATTE TIN | - | - | - | DUAL | GULL WING | 260 | - | unknown | 30 | 8 | R-PDSO-G8 | COMMERCIAL | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | S1035 Series Fast-Acting Fuse | N-CHANNEL AND P-CHANNEL | 7.5 A | - | 0.029 Ω | - | 40 V | - | METAL-OXIDE SEMICONDUCTOR | 32 (DC) V | - | 1 | - | - | - | - | - | - | ||
| FDS4897C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDN337NAnlielectronics Тип | Rochester Electronics LLC |
Description: 2200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | aluminum | 3 | SILICON | 1 | for industrial systems for measuring, regulating and controlling pressure | - | - | - | - | - | 2.2 A | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | SUPERSOT | - | - | - | - | - | none | - | - | - | PLASTIC/EPOXY | SUPERSOT-3 | RECTANGULAR | SMALL OUTLINE | Active | SOT | Yes | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | Pressure sensor housing | MATTE TIN | blue | LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | 260 | - | unknown | 30 | 3 | R-PDSO-G3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | 2 inputs | - | N-CHANNEL | - | - | 0.065 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | 1 | housing cover with glass insert, chain | - | - | - | - | - | ||
| FDN337N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDMS8680Anlielectronics Тип | Rochester Electronics LLC |
Description: 14A, 30V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | brush - graphite; conductor - copper; terminal - brass | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | 14 A | - | - | 3.45 | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN | RECTANGULAR | SMALL OUTLINE | Active | SON | - | - | - | 41*29*36/2000 | - | - | (D) - 26 mm | - | - | - | - | - | - | - | graphite brush for collector motor (with spring) | NOT SPECIFIED | - | - | - | DUAL | FLAT | - | (A) - 16 mm | unknown | - | 8 | R-PDSO-F5 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | N-CHANNEL | - | - | 0.007 Ω | 100 A | 30 V | 216 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | (C) - 6.4 mm | (B) - 13.5 mm | - | ||
| FDMS8680 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNDT3055LAnlielectronics Тип | Rochester Electronics LLC |
4A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | 4 | SILICON | 1 | - | - | - | - | - | - | 4 A | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | - | LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | 260 | - | unknown | 30 | - | R-PDSO-G4 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | N-CHANNEL | - | - | 0.1 Ω | 25 A | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | 1 | - | - | - | - | - | - | ||
| NDT3055L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNTD12N10T4GAnlielectronics Тип | Rochester Electronics LLC |
12A, 100V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, LAED FREE, CASE 369C-01, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | 12 A | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | CASE 369C-01 | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | LAED FREE, CASE 369C-01, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | - | unknown | NOT SPECIFIED | 3 | R-PSSO-G2 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | - | - | N-CHANNEL | - | - | 0.165 Ω | 36 A | 100 V | 75 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | ||
| NTD12N10T4G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNDS0610Anlielectronics Тип | Rochester Electronics LLC |
120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | 0.12 A | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | SOT-23 | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | - | - | - | DUAL | GULL WING | 260 | - | unknown | 30 | 3 | R-PDSO-G3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | - | P-CHANNEL | - | - | 10 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | 5 pF | 1 | - | - | - | - | - | - | ||
| NDS0610 |
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