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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | RoHS | Rohs Code | Transition Frequency-Nom (fT) | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипBSN274Anlielectronics Тип | NXP Semiconductors |
TRANSISTOR 250 mA, 270 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, SC-43, SOT-54 (TO-92) VARIANT, 3 PIN, FET General Purpose Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 0.25 A | NXP SEMICONDUCTORS | - | 1 | 150 °C | - | PLASTIC/EPOXY | PLASTIC, SC-43, SOT-54 (TO-92) VARIANT, 3 PIN | ROUND | CYLINDRICAL | Obsolete | TO-92 | - | No | - | - | - | - | - | EAR99 | - | - | - | BOTTOM | THROUGH-HOLE | - | unknown | - | 3 | - | O-PBCY-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-92 | 8 Ω | - | 270 V | - | METAL-OXIDE SEMICONDUCTOR | 1 W | - | - | 15 pF | - | ||
| BSN274 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDC645NAnlielectronics Тип | Rochester Electronics LLC |
5.5mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 6 | SILICON | 0.0055 A | ROCHESTER ELECTRONICS LLC | 1 | 1 | - | - | PLASTIC/EPOXY | SUPERSOT-6 | RECTANGULAR | SMALL OUTLINE | Active | SOT | - | Yes | - | - | - | e3 | Yes | - | MATTE TIN | - | - | DUAL | GULL WING | 260 | unknown | 30 | 6 | - | R-PDSO-G6 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.03 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| FDC645N | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFS4410ZTRRPBFAnlielectronics Тип | International Rectifier |
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 97 A | INTERNATIONAL RECTIFIER CORP | 1 | 1 | 175 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | D2PAK | - | Yes | - | - | - | e3 | - | EAR99 | MATTE TIN | - | - | SINGLE | GULL WING | - | compliant | - | 3 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-263AB | 0.009 Ω | 390 A | 100 V | 242 mJ | METAL-OXIDE SEMICONDUCTOR | 230 W | - | - | - | - | ||
| IRFS4410ZTRRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBSO615NGAnlielectronics Тип | Rochester Electronics LLC |
Description: 2.6A, 60V, 0.15ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | 2.6 A | ROCHESTER ELECTRONICS LLC | NOT SPECIFIED | 2 | - | - | PLASTIC/EPOXY | ROHS COMPLIANT, SO-8 | RECTANGULAR | SMALL OUTLINE | Active | SOT | - | Yes | - | - | - | e3 | Yes | - | MATTE TIN | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | 260 | unknown | NOT SPECIFIED | 8 | - | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | 0.15 Ω | 10.4 A | 60 V | 60 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| BSO615NG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SK543-4Anlielectronics Тип | SANYO Electric Co Ltd |
Small Signal Field-Effect Transistor, 0.03A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CP, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | 0.03 A | SANYO ELECTRIC CO LTD | - | 1 | 125 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | EAR99 | - | LOW NOISE | - | DUAL | GULL WING | - | unknown | - | 3 | - | R-PDSO-G3 | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | - | - | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.2 W | - | - | - | - | ||
| 2SK543-4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SK543-4Anlielectronics Тип | onsemi |
Description: TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,30MA I(D),TO-236AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | 0.03 A | ON SEMICONDUCTOR | - | 1 | 125 °C | - | - | , | - | - | Obsolete | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 0.2 W | - | - | - | - | ||
| 2SK543-4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMJ10016Anlielectronics Тип | SPTECH |
TO-3 Darlington Transistors ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | Tube-packed | - | - | - | - | - | - | true | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MJ10016 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTG8205Anlielectronics Тип | SamHop Microelectronics Corp. |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | SAMHOP MICROELECTRONICS CORP | - | - | - | - | - | , | - | - | Contact Manufacturer | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STG8205 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SJ327-Z-E1-AZAnlielectronics Тип | Renesas Electronics Corporation |
Switching P-Channel Power MOSFET, MP-3Z, /Embossed Tape
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 4 A | RENESAS ELECTRONICS CORP | - | 1 | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | MP-3Z | - | Yes | - | - | - | - | Yes | EAR99 | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | compliant | NOT SPECIFIED | 0 | - | R-PSSO-G2 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | TO-252 | 0.17 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 20 W | - | - | - | - | ||
| 2SJ327-Z-E1-AZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFQA9N90CAnlielectronics Тип | Rochester Electronics LLC |
9A, 900V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 9 A | ROCHESTER ELECTRONICS LLC | NOT APPLICABLE | 1 | - | - | PLASTIC/EPOXY | TO-3P, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-3P | - | Yes | - | - | - | e3 | Yes | - | MATTE TIN | - | - | SINGLE | THROUGH-HOLE | NOT APPLICABLE | unknown | NOT APPLICABLE | 3 | - | R-PSFM-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 1.4 Ω | 36 A | 900 V | 900 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| FQA9N90C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF9130Anlielectronics Тип | International Rectifier |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF9130 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRLML6302TRAnlielectronics Тип | TT Electronics Resistors |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRLML6302TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBSS64Anlielectronics Тип | Central Semiconductor Corp |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | CENTRAL SEMICONDUCTOR CORP | - | 1 | 150 °C | - | - | - | - | - | Active | - | - | No | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn80Pb20) | - | - | - | - | - | not_compliant | - | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 0.225 W | 0.1 A | 20 | - | - | ||
| BSS64 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипJANTX2N6796Anlielectronics Тип | Unitrode Corporation |
Description: Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 8 A | UNITRODE CORP | - | 1 | 150 °C | - | METAL | - | ROUND | CYLINDRICAL | Obsolete | - | - | - | - | 85 ns | 105 ns | - | - | EAR99 | - | - | 8541.29.00.95 | BOTTOM | WIRE | - | unknown | - | - | MILITARY STANDARD (USA) | O-MBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-205AF | 0.18 Ω | 32 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | 150 pF | 25 W | ||
| JANTX2N6796 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBSS64Anlielectronics Тип | Texas Instruments |
Description: TRANSISTOR,BJT,NPN,80V V(BR)CEO,100MA I(C),SOT-23
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 150 °C | - | - | , | - | - | Obsolete | - | - | No | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 0.225 W | 0.1 A | 20 | - | - | ||
| BSS64 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF9130Anlielectronics Тип | TT Electronics Resistors |
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 2 | SILICON | 11 A | TT ELECTRONICS PLC | - | 1 | 150 °C | - | METAL | HERMETIC SEALED, METAL, TO-3, 2 PIN | ROUND | FLANGE MOUNT | Not Recommended | - | - | No | - | - | - | - | - | EAR99 | - | - | - | BOTTOM | PIN/PEG | NOT SPECIFIED | compliant | NOT SPECIFIED | - | - | O-MBFM-P2 | Not Qualified | SINGLE | ENHANCEMENT MODE | DRAIN | - | P-CHANNEL | TO-3 | 0.35 Ω | 50 A | 100 V | 81 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| IRF9130 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF9130Anlielectronics Тип | Rochester Electronics LLC |
11A, 100V, 0.35ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 2 | SILICON | 11 A | ROCHESTER ELECTRONICS LLC | NOT SPECIFIED | 1 | - | - | METAL | HERMETIC SEALED, MODIFIED TO-3, 2 PIN | ROUND | FLANGE MOUNT | Active | TO-3 | - | No | - | - | - | e0 | No | - | TIN LEAD | - | - | BOTTOM | PIN/PEG | NOT SPECIFIED | unknown | NOT SPECIFIED | 2 | - | O-MBFM-P2 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | TO-204AA | 0.35 Ω | 50 A | 100 V | 81 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| IRF9130 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипJANTX2N6782Anlielectronics Тип | Motorola Semiconductor Products |
Description: Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 3.5 A | MOTOROLA INC | - | 1 | - | - | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | Obsolete | - | - | - | - | - | - | - | - | EAR99 | - | - | - | BOTTOM | WIRE | - | unknown | - | - | - | O-MBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-205AF | 0.6 Ω | 14 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| JANTX2N6782 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC141Anlielectronics Тип | National Semiconductor Corporation |
Description: TRANSISTOR,BJT,NPN,60V V(BR)CEO,1A I(C),TO-39
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 150 °C | - | - | - | - | - | Obsolete | - | - | No | 50 MHz | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | compliant | - | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 0.8 W | 1 A | 40 | - | - | ||
| BC141 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипJANTX2N6782Anlielectronics Тип | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 3.5 A | FAIRCHILD SEMICONDUCTOR CORP | - | 1 | 150 °C | - | - | , | - | - | Transferred | - | - | No | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 15 W | - | - | - | - | ||
| JANTX2N6782 |
Индекс :
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