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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Surface Mount Housing material Body material Number of Terminals Transistor Element Material Exterior Housing Material Backlight voltage Button and head shape Button head shape Case Date Of Intro Dielectric strength Drain Current-Max (ID) Gross weight Head and button shape Ihs Manufacturer Illuation color Illumination voltage Indicator type Installation diameter Insulation voltage Kind of integrated circuit Kind of package LED operating life LED service life LED working life Manufacturer Package Code Mounting Mounting diameter Nominal voltage Number of switching cycles (electrical) Operating Temperature-Max Operating Temperature-Min Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Part Package Code Protection class Relative humidity Rohs Code Switching cycles (electric) Switching cycles (electrical) Switching scheme Transport packaging size/quantity Turn-off Time-Max (toff) Turn-on Time-Max (ton) Type of integrated circuit Operating temperature JESD-609 Code Pbfree Code ECCN Code Terminal Finish Additional Feature Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Frequency Time@Peak Reflow Temperature-Max (s) Pin Count Reference Standard JESD-30 Code Qualification Status Contact resistance Configuration Insulation resistance Number of channels Operating Mode Output current Case Connection Switch type Transistor Application Polarity/Channel Type Operating temperature range Rated current JEDEC-95 Code Drain-source On Resistance-Max Pulsed Drain Current-Max (IDM) DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Power Dissipation-Max (Abs) Rated voltage Feedback Cap-Max (Crss) Highest Frequency Band Saturation Current Power Gain-Min (Gp) Contacts Backlight color Diameter
Vishay Intertechnologies SIR662DP-T1-GE3
Mfr. Тип
SIR662DP-T1-GE3
Anlielectronics Тип

Vishay Intertechnologies
Power Field-Effect Transistor, 60A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - YES nickel-plated brass - 5 SILICON 1 12 V - - - - 2000 (50 Hz / 5 s) V 60 A 76.00 flat ring and button VISHAY INTERTECHNOLOGY INC - - dot - - - - - - ≥40000 hours - - 30 mm - ≥50000 150 °C - UNSPECIFIED HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 RECTANGULAR SMALL OUTLINE Not Recommended - IP65 45...85 % Yes - - ON-OFF + OFF-ON with fixation 62*27*28/50 - - - - e3 - EAR99 Matte Tin (Sn) - DUAL C BEND 260 compliant - 30 - - R-XDSO-C5 Not Qualified ≤50 mΩ SINGLE WITH BUILT-IN DIODE ≥1000 MΩ - ENHANCEMENT MODE - DRAIN GQ30 series vandal-proof button with backlight SWITCHING N-CHANNEL -25…+55 °C 5 A - 0.0048 Ω 100 A 60 V 80 mJ METAL-OXIDE SEMICONDUCTOR 104 W 250 V - - 1 - 4Pin+2Pin blue 35 mm
    SIR662DP-T1-GE3
    SIR662DP-T1-GE3

    Vishay Intertechnologies
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Vishay Intertechnologies SI4190ADY-T1-GE3
    Mfr. Тип
    SI4190ADY-T1-GE3
    Anlielectronics Тип

    		Vishay Intertechnologies
    Description: Small Signal Field-Effect Transistor, 18.4A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 28 Weeks YES nickel-plated brass - 8 SILICON 1 12 V - - - - 2000 (50 Hz / 5 s) V 18.4 A 44.00 flat ring and button VISHAY INTERTECHNOLOGY INC - - dot - - - - ≥40000 hours - - - - 25 mm 250 V ≥50000 - - PLASTIC/EPOXY HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 RECTANGULAR SMALL OUTLINE Active - IP65 45...85 % Yes - - ON-OFF + OFF-ON with fixing 62*27*28/50 - - - - e3 - EAR99 Matte Tin (Sn) - DUAL GULL WING - compliant - - - - R-PDSO-G8 - ≤50 mΩ SINGLE WITH BUILT-IN DIODE ≥1000 MΩ - ENHANCEMENT MODE - - GQ25 series vandal-proof button with backlight SWITCHING N-CHANNEL -25…+55 °C 5 A MS-012AA 0.0088 Ω - 100 V - METAL-OXIDE SEMICONDUCTOR - - - - 1 - 4Pin+2Pin blue 28 mm
      SI4190ADY-T1-GE3
      SI4190ADY-T1-GE3

      Vishay Intertechnologies
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Vishay Intertechnologies SIR638DP-T1-GE3
      Mfr. Тип
      SIR638DP-T1-GE3
      Anlielectronics Тип

      		Vishay Intertechnologies
      Description: Power Field-Effect Transistor,
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 28 Weeks YES nickel-plated brass - 5 SILICON 1 12 V - flat ring and button - 2016-05-01 2000 (50 Hz / 5 sec) V 100 A 32.20 - VISHAY INTERTECHNOLOGY INC - - ring 22 mm - - - - 40000 hours min - - - - 250 V - 150 °C -55 °C PLASTIC/EPOXY SOP-8 RECTANGULAR SMALL OUTLINE Active - IP65 45...85 % Yes - 50000 min ON-(OFF) + OFF-(ON) non-latching 28.5*21*19/50 120 ns 82 ns - - - - EAR99 - - DUAL FLAT NOT SPECIFIED unknown - NOT SPECIFIED - - R-PDSO-F5 - 50 mΩ max SINGLE WITH BUILT-IN DIODE 1000 MΩ min - ENHANCEMENT MODE - DRAIN GQ22 series vandal resistant button with backlight SWITCHING N-CHANNEL -25…+55 °C 5 A - 0.00088 Ω 400 A 40 V 125 mJ METAL-OXIDE SEMICONDUCTOR 104 W - 250 pF - - - 4Pin+2Pin green 25 mm
        SIR638DP-T1-GE3
        SIR638DP-T1-GE3

        Vishay Intertechnologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Vishay Intertechnologies SIZ300DT-T1-GE3
        Mfr. Тип
        SIZ300DT-T1-GE3
        Anlielectronics Тип

        		Vishay Intertechnologies
        Power Field-Effect Transistor, 11A I(D), 30V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAIR-8
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 - YES nickel-plated brass - 8 SILICON 2 - flat ring and button - - - 2000 (50 Hz / 5 s) V 11 A 33.00 - VISHAY INTERTECHNOLOGY INC redmin 12 V dot - - - - - - ≥40000 hours - - 22 mm 250 V ≥50000 150 °C - UNSPECIFIED 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAIR-8 SQUARE SMALL OUTLINE Not Recommended - IP65 45...85 % Yes - - ON-(OFF) + OFF-(ON) without fixation 62*27.5*28/100 - - - - e3 - EAR99 MATTE TIN - DUAL NO LEAD - compliant - - - - S-XDSO-N8 - ≤50 mΩ SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ≥1000 MΩ - ENHANCEMENT MODE - DRAIN SOURCE GQ22 series anti-vandal illuminated button SWITCHING N-CHANNEL -25…+55 °C 5 A - 0.024 Ω 30 A 30 V 7 mJ METAL-OXIDE SEMICONDUCTOR 31 W - - - - - 4Pin+2Pin - 25 mm
          SIZ300DT-T1-GE3
          SIZ300DT-T1-GE3

          Vishay Intertechnologies
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Vishay Intertechnologies SI4816BDY-T1-GE3
          Mfr. Тип
          SI4816BDY-T1-GE3
          Anlielectronics Тип

          		Vishay Intertechnologies
          Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 18 Weeks YES - nickel-plated brass 8 SILICON 2 - - - SOP8 - 2000 (50 Hz / 5 s) V 5.8 A 1 g ring - cone; flat button VISHAY INTERTECHNOLOGY INC bluemin 12 V dot - - PWM controller reel, ≥40000 hours - - - SMD 28 mm - - 150 °C -55 °C PLASTIC/EPOXY - RECTANGULAR SMALL OUTLINE Active - IP65 45...85 % Yes ≥50000 - ON-(OFF) + OFF-(ON) without fixation 62*27*28/50 - - PMIC -40...85°C e3 - EAR99 Matte Tin (Sn) - DUAL GULL WING 260 compliant 0.5MHz 30 - - R-PDSO-G8 - ≤50 mOhm SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ≥1000 MOhm - ENHANCEMENT MODE 1A - GQ28 series vandal-proof button with illumination - N-CHANNEL -25…+55 °C 5 A MS-012AA 0.0185 Ω - 30 V - METAL-OXIDE SEMICONDUCTOR 2.4 W 250 V - - 1 - 4Pin+2Pin - 32 mm
            SI4816BDY-T1-GE3
            SI4816BDY-T1-GE3

            Vishay Intertechnologies
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            International Rectifier IRF6217TRPBF
            Mfr. Тип
            IRF6217TRPBF
            Anlielectronics Тип

            		International Rectifier
            Small Signal Field-Effect Transistor, 0.7A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - YES nickel-plated brass - 8 SILICON 1 12 V - - - - 2000 (50 Hz / 1 min) V 0.7 A 25.00 ring - cone; flat button INTERNATIONAL RECTIFIER CORP - - ring - - - - - - ≥40000 hours - - 19 mm - ≥200000 150 °C - PLASTIC/EPOXY LEAD FREE, SOP-8 RECTANGULAR SMALL OUTLINE Transferred SOIC IP65 45...85 % Yes - - OFF-ON with fixation 42.5*27.5*30.5/500 - - - - e3 Yes EAR99 MATTE TIN - DUAL GULL WING 260 compliant - 30 8 - R-PDSO-G8 Not Qualified ≤50 mΩ SINGLE WITH BUILT-IN DIODE ≥1000 MΩ - ENHANCEMENT MODE - - GQ19 series vandal resistant button with backlight SWITCHING P-CHANNEL -25…+55 °C 2 A MS-012AA 2.4 Ω - 150 V - METAL-OXIDE SEMICONDUCTOR - - - - 1 - 2S+2S (screw) blue 22 mm
              IRF6217TRPBF
              IRF6217TRPBF

              International Rectifier
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Hitachi Ltd 3SK298
              Mfr. Тип
              3SK298
              Anlielectronics Тип

              		Hitachi Ltd
              RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CMPAK-4
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 - YES - nickel-plated brass 4 SILICON 1 - ring - cone; button - dome - MSOP8 - 2000 (50 Hz/1 min) V 0.025 A 1 g - HITACHI LTD - - - - - PWM controller reel, - - - - SMD 19 mm - ≥200000 150 °C - PLASTIC/EPOXY SMALL OUTLINE, R-PDSO-G4 RECTANGULAR SMALL OUTLINE Transferred - IP65 45...85 % - - - OFF-ON with latching 62*27.5*28/500 - - PMIC 0...70°C - - EAR99 - - DUAL GULL WING - unknown 0.5MHz - 4 - R-PDSO-G4 Not Qualified ≤50 mOhm SINGLE ≥1000 MOhm - DUAL GATE, DEPLETION MODE 1A SOURCE GQ19 series vandal-resistant shortened button without backlight AMPLIFIER N-CHANNEL -25…+55 °C 2 A - - - - - METAL-OXIDE SEMICONDUCTOR 0.1 W - 0.04 pF ULTRA HIGH FREQUENCY BAND - 12 dB 2S (screw) - 22 mm
                3SK298
                3SK298

                Hitachi Ltd
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Nexperia BUK9Y41-80E
                Mfr. Тип
                BUK9Y41-80E
                Anlielectronics Тип

                		Nexperia
                Power Field-Effect Transistor, 24A I(D), 80V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - YES nickel-plated brass - 4 SILICON 1 - - - SOP8 - 2000 (50 Hz / 1 min) V 24 A 24.67 flat ring and button NEXPERIA - - - - - PWM controller reel, - - - - SMD 19 mm - 200000 min - - PLASTIC/EPOXY PLASTIC, POWER, SOP-8, LFPAK56-4 RECTANGULAR SMALL OUTLINE Active - IP65 45...85 % Yes - - OFF-ON with fixation 62*27.5*28/300 - - PMIC 0...70°C e3 - EAR99 TIN AVALANCHE RATED SINGLE GULL WING 260 not_compliant 0.5MHz 30 - AEC-Q101; IEC-60134 R-PSSO-G4 - 50 mOhm max SINGLE WITH BUILT-IN DIODE 1000 MOhm min - ENHANCEMENT MODE 1A DRAIN GQ19 series vandal proof button without illumination SWITCHING N-CHANNEL -25…+55 °C 2 A MO-235 0.045 Ω 96 A 80 V 25 mJ METAL-OXIDE SEMICONDUCTOR - - - - 1 - 2NO - 22 mm
                  BUK9Y41-80E
                  BUK9Y41-80E

                  Nexperia
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  International Rectifier IRF7465TRPBF
                  Mfr. Тип
                  IRF7465TRPBF
                  Anlielectronics Тип

                  		International Rectifier
                  Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - YES - - 8 SILICON 1 - - - - - - 1.9 A - - INTERNATIONAL RECTIFIER CORP - - - - - - - - - - - - - - - 150 °C - PLASTIC/EPOXY SO-8 RECTANGULAR SMALL OUTLINE Transferred SOIC - - Yes - - - - - - - - e3 Yes EAR99 MATTE TIN - DUAL GULL WING 260 unknown - 30 8 - R-PDSO-G8 Not Qualified - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - SWITCHING N-CHANNEL - - MS-012AA 0.28 Ω - 150 V - METAL-OXIDE SEMICONDUCTOR 2.5 W - - - 1 - - - -
                    IRF7465TRPBF
                    IRF7465TRPBF

                    International Rectifier
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Vishay Intertechnologies SI7232DN-T1-GE3
                    Mfr. Тип
                    SI7232DN-T1-GE3
                    Anlielectronics Тип

                    		Vishay Intertechnologies
                    Power Field-Effect Transistor, 10A I(D), 20V, 0.0164ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 6 Weeks YES - - 6 SILICON 2 - - - - - - 10 A - - VISHAY INTERTECHNOLOGY INC - - - - - - - - - - - - - - - 150 °C - UNSPECIFIED HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 SQUARE SMALL OUTLINE Active - - - Yes - - - - - - - - e3 - EAR99 Matte Tin (Sn) - DUAL C BEND 260 compliant - 30 - - S-XDSO-C6 Not Qualified - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - DRAIN - SWITCHING N-CHANNEL - - - 0.0164 Ω 40 A 20 V 11 mJ METAL-OXIDE SEMICONDUCTOR 23 W - - - 1 - - - -
                      SI7232DN-T1-GE3
                      SI7232DN-T1-GE3

                      Vishay Intertechnologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Vishay Intertechnologies SI4840BDY-T1-GE3
                      Mfr. Тип
                      SI4840BDY-T1-GE3
                      Anlielectronics Тип

                      		Vishay Intertechnologies
                      Small Signal Field-Effect Transistor, 19A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 17 Weeks, 4 Days YES - - 8 SILICON 1 - - - - - - 19 A - - VISHAY INTERTECHNOLOGY INC - - - - - - - - - - - - - - - 150 °C -55 °C PLASTIC/EPOXY MS-012, SOIC-8 RECTANGULAR SMALL OUTLINE Active - - - Yes - - - - - - - - e3 - EAR99 Matte Tin (Sn) - DUAL GULL WING 260 not_compliant - 40 - - R-PDSO-G8 Not Qualified - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - SWITCHING N-CHANNEL - - MS-012AA 0.009 Ω - 40 V - METAL-OXIDE SEMICONDUCTOR 6 W - - - 1 - - - -
                        SI4840BDY-T1-GE3
                        SI4840BDY-T1-GE3

                        Vishay Intertechnologies
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Renesas Electronics Corporation 2SK1058
                        Mfr. Тип
                        2SK1058
                        Anlielectronics Тип

                        		Renesas Electronics Corporation
                        Description: 7 A, 160 V, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - NO - - 3 SILICON 1 - - - SOW8 1997-08-01 - 7 A 1 g - RENESAS ELECTRONICS CORP - - - - 5kV gate driver reel, - - - - SMD - - - - - PLASTIC/EPOXY TO-3P, 3 PIN RECTANGULAR FLANGE MOUNT Obsolete TO-3P - - No - - - - - - driver -40...125°C e0 No EAR99 TIN LEAD - SINGLE THROUGH-HOLE - compliant - - 3 - R-PSFM-T3 Not Qualified - SINGLE WITH BUILT-IN DIODE - 1 ENHANCEMENT MODE 10A DRAIN - SWITCHING N-CHANNEL - - - - - 160 V - METAL-OXIDE SEMICONDUCTOR - - - - - - - - -
                          2SK1058
                          2SK1058

                          Renesas Electronics Corporation
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Inchange Semiconductor Company Ltd IRF630N
                          Mfr. Тип
                          IRF630N
                          Anlielectronics Тип

                          		Inchange Semiconductor Company Ltd
                          Description: Transistor
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - - - - - - - - - - - - - - - INCHANGE SEMICONDUCTOR CO LTD - - - - - - - - - - - - - - - - - - - - - Contact Manufacturer - - - - - - - - - - - - - - EAR99 - - - - - unknown - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                            IRF630N
                            IRF630N

                            Inchange Semiconductor Company Ltd
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            International Rectifier IRF7904PBF
                            Mfr. Тип
                            IRF7904PBF
                            Anlielectronics Тип

                            		International Rectifier
                            Power Field-Effect Transistor, 11A I(D), 30V, 10.8ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - YES - - 8 SILICON 2 - - - - - - 11 A - - INTERNATIONAL RECTIFIER CORP - - - - - - - - - - - - - - - 150 °C - PLASTIC/EPOXY LEAD FREE, SO-8 RECTANGULAR SMALL OUTLINE Obsolete SOT - - Yes - - - - - - - - e3 Yes EAR99 MATTE TIN - DUAL GULL WING 260 compliant - 30 8 - R-PDSO-G8 Not Qualified - SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - - N-CHANNEL - - - 10.8 Ω 89 A 30 V 250 mJ METAL-OXIDE SEMICONDUCTOR 2 W - - - 1 - - - -
                              IRF7904PBF
                              IRF7904PBF

                              International Rectifier
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Vishay Intertechnologies SIHG44N65EF-GE3
                              Mfr. Тип
                              SIHG44N65EF-GE3
                              Anlielectronics Тип

                              		Vishay Intertechnologies
                              Power Field-Effect Transistor, 46A I(D), 650V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 18 Weeks NO - - 3 SILICON 1 - - - - 2016-05-10 - 46 A - - VISHAY INTERTECHNOLOGY INC - - - - - - - - - - - - - - - - - PLASTIC/EPOXY - RECTANGULAR FLANGE MOUNT Active - - - Yes - - - - - - - - - - EAR99 - - SINGLE THROUGH-HOLE NOT SPECIFIED compliant - NOT SPECIFIED - - R-PSFM-T3 - - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - SWITCHING N-CHANNEL - - TO-247AC 0.073 Ω 154 A 650 V 596 mJ METAL-OXIDE SEMICONDUCTOR - - - - - - - - -
                                SIHG44N65EF-GE3
                                SIHG44N65EF-GE3

                                Vishay Intertechnologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Vishay Intertechnologies SIA419DJ-T1-GE3
                                Mfr. Тип
                                SIA419DJ-T1-GE3
                                Anlielectronics Тип

                                		Vishay Intertechnologies
                                Description: Power Field-Effect Transistor, 8.8A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - YES - - 3 SILICON 1 - - - - - - 8.8 A - - VISHAY INTERTECHNOLOGY INC - - - - - - - - - - - - - - - 150 °C - UNSPECIFIED HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 SQUARE SMALL OUTLINE Obsolete - - - Yes - - - - - - - - - - EAR99 - - DUAL NO LEAD 260 unknown - 40 - - S-XDSO-N3 Not Qualified - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE - DRAIN - SWITCHING P-CHANNEL - - - 0.03 Ω 30 A 20 V - METAL-OXIDE SEMICONDUCTOR 19 W - - - - - - - -
                                  SIA419DJ-T1-GE3
                                  SIA419DJ-T1-GE3

                                  Vishay Intertechnologies
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Vishay Intertechnologies SI7178DP-T1-GE3
                                  Mfr. Тип
                                  SI7178DP-T1-GE3
                                  Anlielectronics Тип

                                  		Vishay Intertechnologies
                                  Power Field-Effect Transistor, 14.9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - YES - - 5 SILICON 1 - - - - - - 14.9 A - - VISHAY INTERTECHNOLOGY INC - - - - - - - - - - - - - - - 150 °C - UNSPECIFIED HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 RECTANGULAR SMALL OUTLINE Not Recommended - - - Yes - - - - - - - - e3 - EAR99 Matte Tin (Sn) - DUAL C BEND 260 not_compliant - 40 - - R-XDSO-C5 Not Qualified - SINGLE WITH BUILT-IN DIODE - - ENHANCEMENT MODE - DRAIN - SWITCHING N-CHANNEL - - - 0.014 Ω 80 A 100 V 80 mJ METAL-OXIDE SEMICONDUCTOR 104 W - - - 1 - - - -
                                    SI7178DP-T1-GE3
                                    SI7178DP-T1-GE3

                                    Vishay Intertechnologies
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Infineon Technologies AG IRF7105TR
                                    Mfr. Тип
                                    IRF7105TR
                                    Anlielectronics Тип

                                    		Infineon Technologies AG
                                    Description: Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - YES - - 8 SILICON 2 - - - - - - 3.5 A - - INFINEON TECHNOLOGIES AG - - - - - - - - - - - - - - - 150 °C - PLASTIC/EPOXY SO-8 RECTANGULAR SMALL OUTLINE Active - - - No - - - - - - - - e3 - EAR99 MATTE TIN LOGIC LEVEL COMPATIBLE DUAL GULL WING - unknown - - - - R-PDSO-G8 Not Qualified - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - SWITCHING N-CHANNEL AND P-CHANNEL - - MS-012AA 0.1 Ω 14 A 25 V - METAL-OXIDE SEMICONDUCTOR 2 W - - - 2 - - - -
                                      IRF7105TR
                                      IRF7105TR

                                      Infineon Technologies AG
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      SUMITOMO ELECTRIC Device Innovations Inc FSX017LG
                                      Mfr. Тип
                                      FSX017LG
                                      Anlielectronics Тип

                                      		SUMITOMO ELECTRIC Device Innovations Inc
                                      RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - YES - - 4 GALLIUM ARSENIDE 1 - - - - - - - - - EUDYNA DEVICES INC - - - - - - - - - - CASE LG - - - - - - CERAMIC, METAL-SEALED COFIRED DISK BUTTON, O-CRDB-F4 ROUND DISK BUTTON Transferred - - - Yes - - - - - - - - - Yes EAR99 - HIGH RELIABILITY RADIAL FLAT NOT SPECIFIED unknown - NOT SPECIFIED 4 - O-CRDB-F4 Not Qualified - SINGLE - - DEPLETION MODE - SOURCE - AMPLIFIER N-CHANNEL - - - - - 8 V - JUNCTION - - - X BAND - - - - -
                                        FSX017LG
                                        FSX017LG

                                        SUMITOMO ELECTRIC Device Innovations Inc
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        International Rectifier IRF7493TRPBF
                                        Mfr. Тип
                                        IRF7493TRPBF
                                        Anlielectronics Тип

                                        		International Rectifier
                                        Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 - YES - - - - 1 - - - - - - 9.3 A 0.5 g - INTERNATIONAL RECTIFIER CORP - - - - - - - - - - - - - - - 150 °C - - - - - Transferred - - - Yes - - - - - - SRAM memory - e3 Yes EAR99 MATTE TIN - - - 260 unknown - 30 - - - - - SINGLE - - ENHANCEMENT MODE - - - - N-CHANNEL - - - - - - - METAL-OXIDE SEMICONDUCTOR 2.5 W - - - 1 - - - -
                                          IRF7493TRPBF
                                          IRF7493TRPBF

                                          International Rectifier
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: SIR662DP-T1-GE3,SI4190ADY-T1-GE3,SIR638DP-T1-GE3,SIZ300DT-T1-GE3,SI4816BDY-T1-GE3.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - Special Purpose has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.