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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипUT4800G-S08-RAnlielectronics Тип | Unisonic Technologies Co Ltd |
Power Field-Effect Transistor, 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN AND LEAD FREE, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | - | UNISONIC TECHNOLOGIES CO LTD | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Active | Yes | - | - | EAR99 | - | - | DUAL | GULL WING | NOT SPECIFIED | compliant | NOT SPECIFIED | - | R-PDSO-G8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.0185 Ω | 40 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| UT4800G-S08-R | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPHB125N06TAnlielectronics Тип | NXP Semiconductors |
75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 75 A | NXP SEMICONDUCTORS | - | 1 | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | - | - | EAR99 | - | ESD PROTECTED | SINGLE | GULL WING | - | unknown | - | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.008 Ω | 240 A | 55 V | 500 mJ | METAL-OXIDE SEMICONDUCTOR | 250 W | - | - | - | ||
| PHB125N06T | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPHB125N06TAnlielectronics Тип | Philips Semiconductors |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | 75 A | PHILIPS SEMICONDUCTORS | - | 1 | 175 °C | - | , | - | - | Transferred | No | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 250 W | - | - | - | ||
| PHB125N06T | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS-LP2301LT1GAnlielectronics Тип | LRC Leshan Radio Co Ltd |
Small Signal Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | LESHAN RADIO CO LTD | - | - | - | - | , | - | - | Active | - | - | - | EAR99 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| S-LP2301LT1G | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRFM6501W-868S2Anlielectronics Тип | Hope Microelectronics Co Ltd |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RFM6501W-868S2 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSM9685MAnlielectronics Тип | Silicon Standard Corp |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | SILICON STANDARD CORP | 1 | - | - | - | , | - | - | Contact Manufacturer | No | - | - | EAR99 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SSM9685M | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTMPFJ177Anlielectronics Тип | Allegro MicroSystems LLC |
Description: Small Signal Field-Effect Transistor, P-Channel, Junction FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | ALLEGRO MICROSYSTEMS LLC | - | - | - | - | - | - | - | Active | No | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | - | - | - | - | - | - | P-CHANNEL | - | - | - | - | - | JUNCTION | - | - | - | - | ||
| TMPFJ177 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SA733-T-A(Q1E)Anlielectronics Тип | NEC Electronics Group |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SA733-T-A(Q1E) | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF9Z35Anlielectronics Тип | International Rectifier |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 15 A | INTERNATIONAL RECTIFIER CORP | - | 1 | - | - | , | - | - | Obsolete | No | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | P-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 74 W | - | - | - | ||
| IRF9Z35 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSMG2304Anlielectronics Тип | Secos Corporation |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | SECOS CORP | - | - | - | - | - | - | - | Contact Manufacturer | - | - | - | EAR99 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SMG2304 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC4596FAnlielectronics Тип | Inchange Semiconductor Company Ltd |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | INCHANGE SEMICONDUCTOR CO LTD | - | - | - | - | , | - | - | Contact Manufacturer | - | - | - | EAR99 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SC4596F | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMCH6122Anlielectronics Тип | onsemi |
TRANSISTOR,BJT,PNP,30V V(BR)CEO,3A I(C),SOT-363VAR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | ON SEMICONDUCTOR | - | 1 | 150 °C | - | - | - | - | Obsolete | - | - | - | EAR99 | - | - | - | - | - | compliant | - | - | - | - | SINGLE | - | - | - | PNP | - | - | - | - | - | - | 1 W | 3 A | 200 | - | ||
| MCH6122 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипX2N3970Anlielectronics Тип | Calogic Inc |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | CALOGIC LLC | - | - | 200 °C | - | - | - | - | Obsolete | - | - | - | EAR99 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | JUNCTION | 1.8 W | - | - | - | ||
| X2N3970 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAP11SL60I-HFAnlielectronics Тип | Advanced Power Electronics Corp |
TRANSISTOR POWER, FET, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | ADVANCED POWER ELECTRONICS CORP | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | compliant | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.38 Ω | 24 A | 600 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| AP11SL60I-HF | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSR4N60AAnlielectronics Тип | Samsung Semiconductor |
Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 2.8 A | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | EAR99 | - | - | SINGLE | GULL WING | - | unknown | - | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | - | 2.5 Ω | 11 A | 600 V | 257 mJ | METAL-OXIDE SEMICONDUCTOR | 49 W | - | - | - | ||
| SSR4N60A | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPM3195PUC-TRLAnlielectronics Тип | American Power Devices Inc |
Description: Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | 2 A | ANPEC ELECTRONICS CORP | - | 1 | 150 °C | - | , | - | - | Contact Manufacturer | Yes | - | - | EAR99 | - | - | - | - | - | compliant | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | P-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 50 W | - | - | - | ||
| APM3195PUC-TRL | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAP0704GMT4-HFAnlielectronics Тип | Advanced Power Electronics Corp |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| AP0704GMT4-HF | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC1227Anlielectronics Тип | Inchange Semiconductor Company Ltd |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | INCHANGE SEMICONDUCTOR CO LTD | - | - | - | - | , | - | - | Contact Manufacturer | - | - | - | EAR99 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SC1227 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SJ561Anlielectronics Тип | SANYO Electric Co Ltd |
Power Field-Effect Transistor, 1.5A I(D), 30V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PCP, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | 1.5 A | SANYO ELECTRIC CO LTD | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | EAR99 | - | - | SINGLE | FLAT | - | unknown | - | 3 | R-PSSO-F3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.6 Ω | 6 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 3.5 W | - | - | - | ||
| 2SJ561 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCMLM0305Anlielectronics Тип | Central Semiconductor Corp |
Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 6 | SILICON | 0.28 A | CENTRAL SEMICONDUCTOR CORP | - | 1 | 150 °C | PLASTIC/EPOXY | PICOMINI-6 | RECTANGULAR | SMALL OUTLINE | Active | No | e0 | No | EAR99 | TIN LEAD | - | DUAL | FLAT | - | not_compliant | - | 6 | R-PDSO-F6 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 3 Ω | - | 50 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | 5 pF | ||
| CMLM0305 |
Индекс :
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