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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Contact plating | Surface Mount | Number of pins | Number of Terminals | Access Time-Max | Connector | Connector pinout layout | Contacts pitch | Date Of Intro | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Row pitch | Spatial orientation | Supply Voltage-Nom (Vsup) | Type of connector | Operating temperature | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | Memory IC Type | Rated voltage | Output Enable | Profile | Mixed Memory Type | Length | Width | Plating thickness | Flammability rating |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипTC518129AFWL-80Anlielectronics Тип | Toshiba America Electronic Components |
IC 128K X 8 PSEUDO STATIC RAM, 80 ns, PDSO32, 0.525 INCH, PLASTIC, SOP-32, Static RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 32 | 80 ns | - | - | - | - | - | - | TOSHIBA CORP | - | - | 131072 words | 128000 | 70 °C | - | PLASTIC/EPOXY | SOP | - | - | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | - | - | 5 V | - | - | e0 | - | - | TIN LEAD | CE/AUTO/SELF REFRESH | - | DUAL | GULL WING | 240 | 1 | 1.27 mm | unknown | - | NOT SPECIFIED | 32 | R-PDSO-G32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | - | 128KX8 | 3-STATE | 2.8 mm | 8 | - | 1048576 bit | PARALLEL | PSEUDO STATIC RAM | - | YES | - | - | 20.6 mm | 10.7 mm | - | - | ||
| TC518129AFWL-80 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипM6MGB64BM34CWG-PAnlielectronics Тип | Renesas Electronics Corporation |
M6MGB64BM34CWG-P
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | RENESAS TECHNOLOGY CORP | - | - | - | - | - | - | - | - | , | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | EAR99 | - | - | 8542.32.00.71 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| M6MGB64BM34CWG-P | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипRD28F1602C3T90Anlielectronics Тип | Intel Corporation |
Description: Memory Circuit, Flash SRAM, 1MX16, CMOS, PBGA66, 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 66 | 90 ns | - | - | - | - | - | - | INTEL CORP | - | - | 1048576 words | 1000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA68,8X12,32 | BGA68,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | - | - | - | 3 V | - | - | - | - | EAR99 | - | SRAM IS ORGANIZED AS 256K X 16 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | 66 | R-PBGA-B66 | Not Qualified | 3.3 V | COMMERCIAL EXTENDED | 2.7 V | - | ASYNCHRONOUS | 0.055 mA | 1MX16 | - | 1.4 mm | 16 | 0.000035 A | 16777216 bit | - | MEMORY CIRCUIT | - | - | - | FLASH+SRAM | 10 mm | 8 mm | - | - | ||
| RD28F1602C3T90 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипNM1282KSLAXAL-3BAnlielectronics Тип | Nanya Technology Corporation |
Memory Circuit,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 162 | - | - | - | - | - | - | - | NANYA TECHNOLOGY CORP | - | - | 67108864 words | 64000000 | 85 °C | -25 °C | PLASTIC/EPOXY | VFBGA | VFBGA, | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | - | Yes | - | - | 1.8 V | - | - | - | - | EAR99 | - | NAND IS ORGANISED AS 256M X 8 AND ALSO OPERATES WITH 1.2V NOMINAL SUPPLY | 8542.32.00.71 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.5 mm | compliant | - | NOT SPECIFIED | - | R-PBGA-B162 | - | 1.95 V | OTHER | 1.7 V | - | SYNCHRONOUS | - | 64MX32 | - | 1 mm | 32 | - | 2147483648 bit | - | MEMORY CIRCUIT | - | - | - | - | 10.5 mm | 8 mm | - | - | ||
| NM1282KSLAXAL-3B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипKMDP6001DA-B425Anlielectronics Тип | Samsung Semiconductor |
Memory Circuit, 64GX8, CMOS, FBGA-254
Сборник данных
Сравнение
| Min.:1 Mult.:1 | gold-plated | YES | 9 | 254 | - | socket | 1x9 | 2.54mm | - | THT | 0.77 g | SAMSUNG SEMICONDUCTOR INC | female | - | 68719476736 words | 64000000000 | - | - | PLASTIC/EPOXY | - | FBGA-254 | - | RECTANGULAR | - | Obsolete | - | - | - | straight | - | pin strips | -40...163°C | - | - | - | - | DRAM IS ORGANISED AS 32G X 1 | - | BOTTOM | BALL | - | 1 | - | compliant | 1.5A | - | - | R-PBGA-B254 | - | - | - | - | - | - | - | 64GX8 | - | - | 8 | - | 549755813888 bit | - | MEMORY CIRCUIT | 60V | - | beryllium copper | FLASH+DRAM | - | - | 0.75µm | UL94V-0 | ||
| KMDP6001DA-B425 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMR2A16AVYS35Anlielectronics Тип | NXP Semiconductors |
Memory Circuit
Сборник данных
Сравнение
| Min.:1 Mult.:1 | tinned | YES | 6 | 44 | - | socket | 2x3 | 1.27mm | 2018-08-17 | THT | 0.41 g | NXP SEMICONDUCTORS | female | - | 262144 words | 256000 | 105 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2-44 | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | - | 1.27mm | straight | 3.3 V | pin strips | -40...163°C | - | - | EAR99 | - | - | 8542.32.00.71 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | 1.5A | - | - | R-PDSO-G44 | - | 3.6 V | INDUSTRIAL | 3 V | - | ASYNCHRONOUS | - | 256KX16 | - | 1.2 mm | 16 | - | 4194304 bit | - | MEMORY CIRCUIT | 125V | - | bronze | - | 18.41 mm | 10.16 mm | 4µm | UL94V-0 | ||
| MR2A16AVYS35 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71PL129JC0BFW9U0Anlielectronics Тип | Spansion |
Memory Circuit, 8MX16, CMOS, PBGA64, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 64 | - | - | - | - | - | - | - | SPANSION INC | - | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | - | - | 3 V | - | - | e1 | - | EAR99 | TIN SILVER COPPER | PSEUDO STATIC RAM IS ORGANIZED AS 4M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | - | 40 | 64 | R-PBGA-B64 | Not Qualified | 3.1 V | OTHER | 2.7 V | - | ASYNCHRONOUS | - | 8MX16 | - | 1.2 mm | 16 | - | 134217728 bit | - | MEMORY CIRCUIT | - | - | - | - | 11.6 mm | 8 mm | - | - | ||
| S71PL129JC0BFW9U0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71NS256PB0ZJETV3Anlielectronics Тип | Spansion |
Description: Memory Circuit, 16MX16, CMOS, PBGA56, 8 X 9.20 MM, 1.20 MM HEIGHT, LEAD FREE, VFBGA-56
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 56 | - | - | - | - | - | - | - | SPANSION INC | - | - | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | - | - | 1.8 V | - | - | - | - | EAR99 | - | PSRAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | - | 40 | 56 | R-PBGA-B56 | Not Qualified | 1.95 V | OTHER | 1.7 V | - | SYNCHRONOUS | - | 16MX16 | - | 1.2 mm | 16 | - | 268435456 bit | - | MEMORY CIRCUIT | - | - | - | - | 9.2 mm | 8 mm | - | - | ||
| S71NS256PB0ZJETV3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипMC-242453F9-B10-BT3Anlielectronics Тип | NEC Electronics Group |
Memory Circuit, 2MX16, CMOS, PBGA77, 12 X 7 MM, FBGA-77
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 77 | - | - | - | - | - | - | - | NEC ELECTRONICS CORP | - | - | 2097152 words | 2000000 | 70 °C | -20 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | - | - | - | - | - | - | - | - | EAR99 | - | THE DEVICE ALSO CONTAINS A 1M X 16 MOBILE SPECIFIED RAM | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | 77 | R-PBGA-B77 | Not Qualified | 3 V | COMMERCIAL | 2.6 V | - | ASYNCHRONOUS | - | 2MX16 | - | 1.2 mm | 16 | - | 33554432 bit | - | MEMORY CIRCUIT | - | - | - | - | 12 mm | 7 mm | - | - | ||
| MC-242453F9-B10-BT3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSST34HF3282-70-4E-L1PAnlielectronics Тип | Silicon Storage Technology |
Memory Circuit, 2MX16, CMOS, PBGA56, 8 X 10 MM, 1.40 MM HEIGHT, MO-210, LFBGA-56
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 56 | - | - | - | - | - | - | - | SILICON STORAGE TECHNOLOGY INC | - | - | 2097152 words | 2000000 | 85 °C | -20 °C | PLASTIC/EPOXY | LFBGA | LFBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | No | - | - | 3 V | - | - | - | - | EAR99 | - | ALSO CONTAINS 512K X 16 SRAM | 8542.32.00.71 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | - | NOT SPECIFIED | 56 | R-PBGA-B56 | Not Qualified | 3.3 V | OTHER | 2.7 V | - | ASYNCHRONOUS | - | 2MX16 | - | 1.4 mm | 16 | - | 33554432 bit | - | MEMORY CIRCUIT | - | - | - | - | 10 mm | 8 mm | - | - | ||
| SST34HF3282-70-4E-L1P | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипM4-4104S-Z2Anlielectronics Тип | Moujen Switch |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| M4-4104S-Z2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71GL064AB0BFW0Z0Anlielectronics Тип | Spansion |
Memory Circuit, 4MX16, CMOS, PBGA56, 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-56
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 56 | - | - | - | - | - | - | - | SPANSION INC | - | 3 | 4194304 words | 4000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | - | - | 3 V | - | - | e1 | - | EAR99 | TIN SILVER COPPER | PSRAM IS ORGANIZED AS 512K X 16 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | - | 56 | R-PBGA-B56 | Not Qualified | 3.1 V | COMMERCIAL EXTENDED | 2.7 V | - | ASYNCHRONOUS | - | 4MX16 | - | 1.2 mm | 16 | - | 67108864 bit | - | MEMORY CIRCUIT | - | - | - | - | 9 mm | 7 mm | - | - | ||
| S71GL064AB0BFW0Z0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипXC17S30XLPDG8IAnlielectronics Тип | AMD Xilinx |
Memory Circuit, 249168X1, CMOS, PDIP8, PLASTIC, DIP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 8 | - | - | - | - | - | - | - | XILINX INC | - | 1 | 249168 words | 249168 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | DIP, | - | RECTANGULAR | IN-LINE | Obsolete | DIP | Yes | - | - | 3.3 V | - | - | e3 | Yes | EAR99 | Matte Tin (Sn) | - | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | - | 30 | 8 | R-PDIP-T8 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | - | SYNCHRONOUS | - | 249168X1 | - | 4.5974 mm | 1 | - | 249168 bit | - | MEMORY CIRCUIT | - | - | - | - | 9.3599 mm | 7.62 mm | - | - | ||
| XC17S30XLPDG8I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипM4-4114S-Z3Anlielectronics Тип | Moujen Switch |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| M4-4114S-Z3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипNAND99W3M1BZBC5EAnlielectronics Тип | Micron Technology Inc |
Memory Circuit, Flash SDRAM, PBGA137
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 137 | - | - | - | - | - | - | - | MICRON TECHNOLOGY INC | - | - | - | - | 85 °C | -30 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA137,10X15,32 | BGA137,10X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | Yes | - | - | 3 V | - | - | - | - | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | - | R-PBGA-B137 | Not Qualified | - | OTHER | - | - | - | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | - | - | - | FLASH+SDRAM | - | - | - | - | ||
| NAND99W3M1BZBC5E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSST34WA1601-70-5E-MVJEAnlielectronics Тип | Microchip Technology Inc |
SPECIALTY MEMORY CIRCUIT, PBGA44, 6 X 8 MM, 0.92 MM HEIGHT, 0.30 MM BALL, ROHS COMPLIANT, MO-225, VFBGA-44
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 44 | - | - | - | - | - | - | - | MICROCHIP TECHNOLOGY INC | - | - | 1048576 words | 1000000 | 85 °C | -20 °C | PLASTIC/EPOXY | VFBGA | 6 X 8 MM, 0.92 MM HEIGHT, 0.30 MM BALL, ROHS COMPLIANT, MO-225, VFBGA-44 | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | BGA | Yes | - | - | 1.8 V | - | - | - | Yes | EAR99 | - | ZERO DENSITY PSRAM | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | compliant | - | 40 | 44 | R-PBGA-B44 | Not Qualified | 1.95 V | OTHER | 1.7 V | - | SYNCHRONOUS | - | 1MX16 | - | 1 mm | 16 | - | 16777216 bit | - | MEMORY CIRCUIT | - | - | - | - | 8 mm | 6 mm | - | - | ||
| SST34WA1601-70-5E-MVJE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71PL127JB0BAWQB0Anlielectronics Тип | Spansion |
Description: Memory Circuit, 8MX16, CMOS, PBGA64, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE COMPLIANT, FBGA-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 64 | - | - | - | - | - | - | - | SPANSION INC | - | - | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | - | - | - | 3 V | - | - | - | - | EAR99 | - | PSRAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | OTHER | 2.7 V | - | ASYNCHRONOUS | - | 8MX16 | - | 1.2 mm | 16 | - | 134217728 bit | - | MEMORY CIRCUIT | - | - | - | - | 11.6 mm | 8 mm | - | - | ||
| S71PL127JB0BAWQB0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипNAND98R3M2AZBB5EAnlielectronics Тип | Numonyx Memory Solutions |
Memory Circuit, Flash SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 107 | - | - | - | - | - | - | - | NUMONYX | - | - | - | - | 85 °C | -30 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA107,10X14,32 | BGA107,10X14,32 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | Yes | - | - | 1.8 V | - | - | - | Yes | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | NOT SPECIFIED | - | 0.8 mm | unknown | - | NOT SPECIFIED | 107 | R-PBGA-B107 | Not Qualified | - | OTHER | - | - | - | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | - | - | - | FLASH+SDRAM | - | - | - | - | ||
| NAND98R3M2AZBB5E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипPF38F5070M0Y0V0Anlielectronics Тип | Numonyx Memory Solutions |
Memory Circuit, Flash PSRAM, PBGA165,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | - | 165 | 96 ns | - | - | - | - | - | - | NUMONYX | - | - | - | - | - | - | PLASTIC/EPOXY | FBGA | FBGA, BGA165,12X15,25 | BGA165,12X15,25 | RECTANGULAR | GRID ARRAY, FINE PITCH | Transferred | - | Yes | - | - | 1.8 V | - | - | - | - | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.635 mm | unknown | - | - | - | R-PBGA-B165 | Not Qualified | - | - | - | - | - | - | - | - | - | - | 0.00016 A | - | - | MEMORY CIRCUIT | - | - | - | FLASH+PSRAM | - | - | - | - | ||
| PF38F5070M0Y0V0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипTH50VSF3580AASBAnlielectronics Тип | AMD |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| TH50VSF3580AASB |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ




