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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Date Of Intro | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Mixed Memory Type | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипSSDSC2KB240G801Anlielectronics Тип | Intel Corporation |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SSDSC2KB240G801 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипM2704Anlielectronics Тип | SGS-Ates Componenti Electronici SPA |
Memory IC, 512X8, MOS, CDIP24
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 24 | 450 ns | - | SGS-ATES COMPONENTI ELECTRONICI S P A | - | 512 words | 512 | 70 °C | - | CERAMIC | DIP | DIP, DIP24,.6 | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.71 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | - | R-XDIP-T24 | Not Qualified | - | COMMERCIAL | - | - | - | 512X8 | 3-STATE | - | 8 | - | 4096 bit | - | COMMON | - | - | - | - | ||
| M2704 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHM538253TT-7Anlielectronics Тип | Hitachi Ltd |
Description: Video DRAM, 256KX8, CMOS, PDSO40
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 40 | 70 ns | - | HITACHI LTD | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | TSOP | TSOP, TSOP40/44,.46,32 | TSOP40/44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | - | 5 V | - | - | EAR99 | - | - | 8542.32.00.71 | DUAL | GULL WING | - | - | 0.8 mm | unknown | - | - | R-PDSO-G40 | Not Qualified | - | COMMERCIAL | - | - | 0.19 mA | 256KX8 | - | - | 8 | 0.007 A | 2097152 bit | - | - | VIDEO DRAM | - | - | - | ||
| HM538253TT-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипM4-4101-Z3Anlielectronics Тип | Moujen Switch |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| M4-4101-Z3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипM4-4101S-Z2Anlielectronics Тип | Moujen Switch |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| M4-4101S-Z2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSDPE2KX040T807Anlielectronics Тип | Intel Corporation |
Description: Memory Circuit,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | INTEL CORP | - | - | - | - | - | - | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | - | - | - | ||
| SSDPE2KX040T807 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNAND99W3M1BZBC5EAnlielectronics Тип | Numonyx Memory Solutions |
Description: Memory Circuit, Flash SDRAM, PBGA137, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-137
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 137 | - | - | NUMONYX | - | - | - | 85 °C | -30 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA137,10X15,32 | BGA137,10X15,32 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | Yes | 3 V | - | Yes | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | NOT SPECIFIED | - | 0.8 mm | unknown | NOT SPECIFIED | 137 | R-PBGA-B137 | Not Qualified | - | OTHER | - | - | - | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | FLASH+SDRAM | - | - | ||
| NAND99W3M1BZBC5E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS71JL064HA0BAW01Anlielectronics Тип | AMD |
Description: Memory Circuit, Flash SRAM, CMOS, PBGA73
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 73 | 70 ns | - | ADVANCED MICRO DEVICES INC | - | 4194304 words | 4000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA73,10X12,32 | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | - | Yes | 3 V | - | - | EAR99 | - | SRAM IS ORGANISED AS 1KX16 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | - | R-PBGA-B73 | Not Qualified | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 4MX16 | - | 1.4 mm | 16 | - | 67108864 bit | - | - | MEMORY CIRCUIT | FLASH+SRAM | 11.6 mm | 8 mm | ||
| S71JL064HA0BAW01 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMC-222253AF9-B85X-BT3Anlielectronics Тип | NEC Electronics America Inc |
Description: Memory Circuit, 2MX16, MOS, PBGA77, 12 X 7 MM, FBGA-77
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 77 | - | - | NEC ELECTRONICS AMERICA INC | - | 2097152 words | 2000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 12 X 7 MM, FBGA-77 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | No | - | e0 | - | EAR99 | TIN LEAD | SRAM IS ORGANISED AS 256 X 16 OR 512K X 8 AND FLASH CAN ALSO BE ORGANISED AS 4M X 8 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | - | R-PBGA-B77 | Not Qualified | 3.6 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 2MX16 | - | 1.2 mm | 16 | - | 33554432 bit | - | - | MEMORY CIRCUIT | - | 12 mm | 7 mm | ||
| MC-222253AF9-B85X-BT3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипTC51832ASPL-85Anlielectronics Тип | Toshiba America Electronic Components |
IC 32K X 8 PSEUDO STATIC RAM, 85 ns, PDIP28, 0.300 INCH, PLASTIC, DIP-28, Static RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 28 | 85 ns | - | TOSHIBA CORP | - | 32768 words | 32000 | 70 °C | - | PLASTIC/EPOXY | DIP | - | - | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | - | - | TIN LEAD | - | - | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | unknown | NOT SPECIFIED | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | - | 32KX8 | - | 4.45 mm | 8 | - | 262144 bit | PARALLEL | - | PSEUDO STATIC RAM | - | 34.9 mm | 7.62 mm | ||
| TC51832ASPL-85 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMC2210310-005-CAnlielectronics Тип | ATGBICS |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MC2210310-005-C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSST30VR023-500-C-KHAnlielectronics Тип | Silicon Storage Technology |
Memory Circuit, ROM SRAM, CMOS, PDSO32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 32 | - | - | SILICON STORAGE TECHNOLOGY INC | - | - | - | 70 °C | - | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP32,.56,20 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | No | 3 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.71 | DUAL | GULL WING | - | - | 0.5 mm | unknown | - | - | R-PDSO-G32 | Not Qualified | - | COMMERCIAL | - | - | 0.0065 mA | - | - | - | - | 0.00001 A | - | - | - | MEMORY CIRCUIT | ROM+SRAM | - | - | ||
| SST30VR023-500-C-KH | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипM36DR232A120ZA6CAnlielectronics Тип | STMicroelectronics |
SPECIALTY MEMORY CIRCUIT, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 66 | 120 ns | - | STMICROELECTRONICS | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | 0.80 MM PITCH, STACK, LFBGA-66 | BGA66,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Transferred | BGA | No | - | e0 | - | EAR99 | TIN LEAD | THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | not_compliant | - | 66 | R-PBGA-B66 | Not Qualified | 2.2 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | 0.04 mA | 2MX16 | - | 1.4 mm | 16 | 0.000025 A | 33554432 bit | - | - | MEMORY CIRCUIT | FLASH+SRAM | 12 mm | 8 mm | ||
| M36DR232A120ZA6C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипM36DR232A120ZA6CAnlielectronics Тип | Numonyx Memory Solutions |
Memory Circuit, 2MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 66 | - | - | NUMONYX | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | LFBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | not_compliant | - | 66 | R-PBGA-B66 | Not Qualified | 2.2 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | - | 2MX16 | - | 1.4 mm | 16 | - | 33554432 bit | - | - | MEMORY CIRCUIT | - | 12 mm | 8 mm | ||
| M36DR232A120ZA6C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSDSC2KG019T701Anlielectronics Тип | Intel Corporation |
Memory Circuit,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | 2018-07-27 | INTEL CORP | - | - | - | - | - | - | - | , | - | - | - | Obsolete | - | - | - | - | - | EAR99 | - | - | 8542.32.00.71 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | - | - | - | ||
| SSDSC2KG019T701 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNAND98R3M2AZBB5EAnlielectronics Тип | Micron Technology Inc |
Memory Circuit, Flash SDRAM, PBGA107,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 107 | - | - | MICRON TECHNOLOGY INC | - | - | - | 85 °C | -30 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA107,10X14,32 | BGA107,10X14,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | Yes | 1.8 V | - | - | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | R-PBGA-B107 | Not Qualified | - | OTHER | - | - | - | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | FLASH+SDRAM | - | - | ||
| NAND98R3M2AZBB5E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPF38F5070M0Y0V0Anlielectronics Тип | Micron Technology Inc |
Memory Circuit, Flash PSRAM, PBGA165,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 165 | 96 ns | - | MICRON TECHNOLOGY INC | - | - | - | - | - | PLASTIC/EPOXY | FBGA | FBGA, BGA165,12X15,25 | BGA165,12X15,25 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | Yes | 1.8 V | - | - | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.635 mm | compliant | - | - | R-PBGA-B165 | Not Qualified | - | - | - | - | - | - | - | - | - | 0.00016 A | - | - | - | MEMORY CIRCUIT | FLASH+PSRAM | - | - | ||
| PF38F5070M0Y0V0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS71NS256PB0ZJETV0Anlielectronics Тип | Spansion |
Memory Circuit, 16MX16, CMOS, PBGA56, 8 X 9.20 MM, 1.20 MM HEIGHT, LEAD FREE, VFBGA-56
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 56 | - | - | SPANSION INC | - | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | - | - | EAR99 | - | PSRAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | 40 | 56 | R-PBGA-B56 | Not Qualified | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | - | 16MX16 | - | 1.2 mm | 16 | - | 268435456 bit | - | - | MEMORY CIRCUIT | - | 9.2 mm | 8 mm | ||
| S71NS256PB0ZJETV0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS72NS512RD0AHGL43Anlielectronics Тип | Spansion |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| S72NS512RD0AHGL43 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипS71WS128NC0BFWA70Anlielectronics Тип | Spansion |
Memory Circuit, 8MX16, CMOS, PBGA84, 11.60 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | - | - | SPANSION INC | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 11.60 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84 | BGA84,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | - | EAR99 | TIN SILVER COPPER | PSRAM IS ORGANIZED AS 4M X 16BIT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 84 | R-PBGA-B84 | Not Qualified | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | - | 8MX16 | - | 1.2 mm | 16 | - | 134217728 bit | - | - | MEMORY CIRCUIT | FLASH+PSRAM | 11.6 mm | 8 mm | ||
| S71WS128NC0BFWA70 |
Индекс :
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