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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Memory IC Type | Mixed Memory Type | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипMC2210310-030-CAnlielectronics Тип | ATGBICS |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MC2210310-030-C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMC-242453F9-B10-BT3Anlielectronics Тип | Renesas Electronics Corporation |
IC,MIXED MEMORY,FLASH SRAM,HYBRID,BGA,77PIN,PLASTIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 77 | 100 ns | RENESAS ELECTRONICS CORP | - | - | - | 70 °C | -20 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA77,8X14,32 | BGA77,8X14,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | - | - | - | - | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | unknown | - | - | R-PBGA-B77 | Not Qualified | - | COMMERCIAL | - | - | 0.045 mA | - | - | - | 0.00001 A | - | MEMORY CIRCUIT | FLASH+SRAM | - | - | ||
| MC-242453F9-B10-BT3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSST34HF324G-70-4E-L3KEAnlielectronics Тип | Silicon Storage Technology |
Memory Circuit, 2MX16, CMOS, PBGA48, 6 X 8 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, MO-210, LFBGA-48
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 48 | - | SILICON STORAGE TECHNOLOGY INC | - | 2097152 words | 2000000 | 85 °C | -20 °C | PLASTIC/EPOXY | LFBGA | LFBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | - | 3 V | - | - | EAR99 | - | SRAM IS ORGANISED AS 256K X 16 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | 48 | R-PBGA-B48 | Not Qualified | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 2MX16 | 1.4 mm | 16 | - | 33554432 bit | MEMORY CIRCUIT | - | 8 mm | 6 mm | ||
| SST34HF324G-70-4E-L3KE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSST34HF324G-70-4E-L3KEAnlielectronics Тип | Greenliant Systems Ltd |
Memory IC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | GREENLIANT SYSTEMS LTD | - | - | - | - | - | - | - | , | - | - | - | Obsolete | - | - | - | - | - | EAR99 | - | - | 8542.32.00.71 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SST34HF324G-70-4E-L3KE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAM27C2048-150PCAnlielectronics Тип | Cypress Semiconductor |
AM27C2048-150PC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | CYPRESS SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| AM27C2048-150PC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTMS4C1060-30SDAnlielectronics Тип | Texas Instruments |
Description: IC IC,FIELD/FRAME/LINE MEMORY,CMOS,ZIP,20PIN,PLASTIC, Memory IC:Other
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 20 | 25 ns | TEXAS INSTRUMENTS INC | - | - | - | 70 °C | - | PLASTIC/EPOXY | ZIP | ZIP, ZIP20,.1 | ZIP20,.1 | RECTANGULAR | IN-LINE | Obsolete | - | No | 5 V | - | - | EAR99 | - | - | 8542.32.00.71 | ZIG-ZAG | THROUGH-HOLE | NOT SPECIFIED | - | 1.27 mm | not_compliant | NOT SPECIFIED | - | R-PZIP-T20 | Not Qualified | - | COMMERCIAL | - | - | 0.05 mA | - | - | - | 0.01 A | - | MEMORY CIRCUIT | - | - | - | ||
| TMS4C1060-30SD | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSN74LS189NAnlielectronics Тип | Motorola Mobility LLC |
SPECIALTY MEMORY CIRCUIT, PDIP16, DIP-16
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 16 | - | MOTOROLA INC | - | 16 words | 16 | - | - | PLASTIC/EPOXY | DIP | DIP, | - | RECTANGULAR | IN-LINE | Obsolete | DIP | - | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.71 | DUAL | THROUGH-HOLE | - | 1 | - | unknown | - | 16 | R-PDIP-T16 | Not Qualified | - | - | - | ASYNCHRONOUS | - | 16X4 | - | 4 | - | 64 bit | MEMORY CIRCUIT | - | - | - | ||
| SN74LS189N | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипRD28F3208C3T70Anlielectronics Тип | Intel Corporation |
Memory Circuit, Flash SRAM, 2MX16, CMOS, PBGA66, 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 66 | 70 ns | INTEL CORP | - | 2097152 words | 2000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA68,8X12,32 | BGA68,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | No | 3 V | - | - | EAR99 | - | SRAM IS ORGANIZED AS 512K X 16 | 8542.32.00.71 | BOTTOM | BALL | 240 | 1 | 0.8 mm | compliant | 30 | 66 | R-PBGA-B66 | Not Qualified | 3.3 V | COMMERCIAL EXTENDED | 2.7 V | ASYNCHRONOUS | 0.055 mA | 2MX16 | 1.4 mm | 16 | 0.000006 A | 33554432 bit | MEMORY CIRCUIT | FLASH+SRAM | 10 mm | 8 mm | ||
| RD28F3208C3T70 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипS71GL128NB0BFW9Z0Anlielectronics Тип | Spansion |
Memory Circuit, 8MX16, CMOS, PBGA64, 8 X 11.60 MM, 1.20 MM HIEGHT, LEAD FREE, FBGA-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | - | SPANSION INC | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 8 X 11.60 MM, 1.20 MM HIEGHT, LEAD FREE, FBGA-64 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 3 V | e1 | - | 3A991.B.1.A | TIN SILVER COPPER | PSRAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 64 | R-PBGA-B64 | Not Qualified | 3.1 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 8MX16 | 1.2 mm | 16 | - | 134217728 bit | MEMORY CIRCUIT | - | 11.6 mm | 8 mm | ||
| S71GL128NB0BFW9Z0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипXC17S50XLPDG8CAnlielectronics Тип | AMD Xilinx |
Memory Circuit, 559232X1, CMOS, PDIP8, PLASTIC, DIP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | - | XILINX INC | 1 | 559232 words | 559232 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, | - | RECTANGULAR | IN-LINE | Obsolete | DIP | Yes | 3.3 V | e3 | Yes | EAR99 | Matte Tin (Sn) | - | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | 30 | 8 | R-PDIP-T8 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | SYNCHRONOUS | - | 559232X1 | 4.5974 mm | 1 | - | 559232 bit | MEMORY CIRCUIT | - | 9.3599 mm | 7.62 mm | ||
| XC17S50XLPDG8C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипM4-4112RS-Z2Anlielectronics Тип | Moujen Switch |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| M4-4112RS-Z2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS71VS256RD0AHKBL0Anlielectronics Тип | Cypress Semiconductor |
Memory Circuit, Flash PSRAM, CMOS, PBGA56,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 56 | - | CYPRESS SEMICONDUCTOR CORP | - | - | - | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | - | BGA56,10X14,20 | RECTANGULAR | GRID ARRAY, FINE PITCH | Transferred | - | Yes | 1.8 V | - | - | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.5 mm | compliant | - | - | R-PBGA-B56 | Not Qualified | - | OTHER | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | FLASH+PSRAM | - | - | ||
| S71VS256RD0AHKBL0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSST32HF3281-70-4E-LSEAnlielectronics Тип | Greenliant Systems Ltd |
Memory IC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | GREENLIANT SYSTEMS LTD | - | - | - | - | - | - | - | , | - | - | - | Obsolete | - | - | - | - | - | EAR99 | - | - | 8542.32.00.71 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SST32HF3281-70-4E-LSE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFM3135-GTRAnlielectronics Тип | Ramtron International Corporation |
Description: Memory Circuit, PDSO20, GREEN, MS-013DAC, SOIC-20
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 20 | - | RAMTRON INTERNATIONAL CORP | - | - | - | - | - | PLASTIC/EPOXY | - | , | - | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | - | - | - | - | EAR99 | - | - | 8542.32.00.71 | DUAL | GULL WING | - | - | - | unknown | - | 20 | R-PDSO-G20 | Not Qualified | - | - | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | - | - | - | ||
| FM3135-GTR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEN71SN10F-45EBWPAnlielectronics Тип | Eon Silicon Solution Inc |
Memory Circuit, 32MX16, CMOS, PBGA130, 8 X 9 MM, 1 MM HEIGHT, 0.65 MM PITCH, FBGA-130
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 130 | - | EON SILICON SOLUTION INC | - | 33554432 words | 32000000 | 85 °C | -25 °C | PLASTIC/EPOXY | VFBGA | VFBGA, | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Transferred | BGA | - | 1.8 V | - | - | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.65 mm | unknown | - | 130 | R-PBGA-B130 | - | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | - | 32MX16 | 1 mm | 16 | - | 536870912 bit | MEMORY CIRCUIT | - | 9 mm | 8 mm | ||
| EN71SN10F-45EBWP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипEN71SN10F-45EBWPAnlielectronics Тип | Elite Semiconductor Memory Technology Inc |
Memory Circuit, 32MX16, CMOS, PBGA130, 8 X 9 MM, 1 MM HEIGHT, 0.65 MM PITCH, FBGA-130
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 130 | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 33554432 words | 32000000 | 85 °C | -25 °C | PLASTIC/EPOXY | VFBGA | VFBGA, | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 1.8 V | - | - | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.65 mm | unknown | - | - | R-PBGA-B130 | - | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | - | 32MX16 | 1 mm | 16 | - | 536870912 bit | MEMORY CIRCUIT | - | 9 mm | 8 mm | ||
| EN71SN10F-45EBWP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRD38F3040L0YTQ0Anlielectronics Тип | Numonyx Memory Solutions |
Description: Memory Circuit, Flash PSRAM, Hybrid, PBGA88,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 88 | 88 ns | NUMONYX | - | - | - | - | - | PLASTIC/EPOXY | FBGA | FBGA, BGA88,8X12,32 | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Transferred | - | No | 1.8 V | - | - | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | unknown | - | - | R-PBGA-B88 | Not Qualified | - | - | - | - | 0.035 mA | - | - | - | - | - | MEMORY CIRCUIT | FLASH+PSRAM | - | - | ||
| RD38F3040L0YTQ0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRD38F3040L0YTQ0Anlielectronics Тип | Micron Technology Inc |
Memory Circuit, Flash PSRAM, Hybrid, PBGA88,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 88 | 88 ns | MICRON TECHNOLOGY INC | - | - | - | - | - | PLASTIC/EPOXY | FBGA | FBGA, BGA88,8X12,32 | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | No | 1.8 V | - | - | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | unknown | - | - | R-PBGA-B88 | Not Qualified | - | - | - | - | 0.035 mA | - | - | - | - | - | MEMORY CIRCUIT | FLASH+PSRAM | - | - | ||
| RD38F3040L0YTQ0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNAND98R3M0AZBB5EAnlielectronics Тип | Numonyx Memory Solutions |
Memory Circuit, Flash SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 107 | - | NUMONYX | - | - | - | 85 °C | -30 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA107,10X14,32 | BGA107,10X14,32 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | Yes | 1.8 V | - | Yes | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | NOT SPECIFIED | - | 0.8 mm | unknown | NOT SPECIFIED | 107 | R-PBGA-B107 | Not Qualified | - | OTHER | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | FLASH+SDRAM | - | - | ||
| NAND98R3M0AZBB5E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипXC17S05XLVOG8CAnlielectronics Тип | AMD Xilinx |
Memory Circuit, 54544X1, CMOS, PDSO8, PLASTIC, TSOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | - | XILINX INC | 3 | 54544 words | 54544 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | Yes | 3.3 V | e3 | Yes | EAR99 | Matte Tin (Sn) | - | 8542.32.00.71 | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 30 | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | SYNCHRONOUS | - | 54544X1 | 1.2 mm | 1 | - | 54544 bit | MEMORY CIRCUIT | - | 4.9 mm | 3.9 mm | ||
| XC17S05XLVOG8C |
Индекс :
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