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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Memory IC Type | Mixed Memory Type | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипS71PL127JB0BFW9ZAnlielectronics Тип | Spansion |
Memory Circuit, 8MX16, CMOS, PBGA64, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | - | SPANSION INC | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 3 V | e1 | - | EAR99 | TIN SILVER COPPER | PSEUDO STATIC RAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 8MX16 | 1.2 mm | 16 | - | 134217728 bit | MEMORY CIRCUIT | - | 11.6 mm | 8 mm | ||
| S71PL127JB0BFW9Z | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSST32HF164-70-4C-TBKAnlielectronics Тип | Silicon Storage Technology |
Memory Circuit, Flash SRAM, 1MX16, CMOS, PBGA48, 10 X 12 MM, 1.20 MM HEIGHT, TBGA-48
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 48 | 70 ns | SILICON STORAGE TECHNOLOGY INC | - | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | TBGA | TBGA, BGA48,6X8,40 | BGA48,6X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | No | 3 V | e0 | - | EAR99 | TIN LEAD | ALSO CONTAINS 256K X 16 SRAM | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 1 mm | unknown | - | 48 | R-PBGA-B48 | Not Qualified | 3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 1MX16 | 1.2 mm | 16 | 0.00003 A | 16777216 bit | MEMORY CIRCUIT | FLASH+SRAM | 12 mm | 10 mm | ||
| SST32HF164-70-4C-TBK | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71PL256NC0HFW5U0Anlielectronics Тип | Spansion |
Memory Circuit, Flash PSRAM, 16MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | 70 ns | SPANSION INC | 3 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 8 X 11.60 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-84 | BGA84,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 3 V | e1 | - | EAR99 | TIN SILVER COPPER | - | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 84 | R-PBGA-B84 | Not Qualified | 3.1 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 16MX16 | 1.2 mm | 16 | - | 268435456 bit | MEMORY CIRCUIT | FLASH+PSRAM | 11.6 mm | 8 mm | ||
| S71PL256NC0HFW5U0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипM5M410092AFP-13Anlielectronics Тип | Mitsubishi Electric |
Memory Circuit, 320KX32, CMOS, PQFP128, 14 X 20 MM, 0.50 MM PITCH, PLASTIC, LQFP-128
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 128 | - | MITSUBISHI ELECTRIC CORP | - | 327680 words | 320000 | - | - | PLASTIC/EPOXY | LFQFP | LFQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | - | 3.3 V | - | - | EAR99 | - | - | 8542.32.00.71 | QUAD | GULL WING | - | 1 | 0.5 mm | unknown | - | 128 | R-PQFP-G128 | Not Qualified | 3.465 V | - | 3.135 V | SYNCHRONOUS | - | 320KX32 | 1.7 mm | 32 | - | 10485760 bit | MEMORY CIRCUIT | - | 20 mm | 14 mm | ||
| M5M410092AFP-13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипCDP1824Anlielectronics Тип | General Electric Solid State |
Memory IC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | GENERAL ELECTRIC SOLID STATE | - | - | - | - | - | - | - | - | - | - | - | Obsolete | - | - | - | - | - | EAR99 | - | - | 8542.32.00.71 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| CDP1824 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSLF9000NAnlielectronics Тип | Infineon Technologies AG |
Memory IC,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | EAR99 | - | - | 8542.32.00.71 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SLF9000N | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипXC17S50XLPDG8CAnlielectronics Тип | AMD Xilinx |
Memory Circuit, 559232X1, CMOS, PDIP8, PLASTIC, DIP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | - | XILINX INC | 1 | 559232 words | 559232 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, | - | RECTANGULAR | IN-LINE | Obsolete | DIP | Yes | 3.3 V | e3 | Yes | EAR99 | Matte Tin (Sn) | - | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | 30 | 8 | R-PDIP-T8 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | SYNCHRONOUS | - | 559232X1 | 4.5974 mm | 1 | - | 559232 bit | MEMORY CIRCUIT | - | 9.3599 mm | 7.62 mm | ||
| XC17S50XLPDG8C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSST32HF324C-70-4C-LBKEAnlielectronics Тип | Greenliant Systems Ltd |
Memory IC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | GREENLIANT SYSTEMS LTD | - | - | - | - | - | - | - | , | - | - | - | Obsolete | - | - | - | - | - | EAR99 | - | - | 8542.32.00.71 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SST32HF324C-70-4C-LBKE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипXC17S05PDG8CAnlielectronics Тип | AMD Xilinx |
Description: Memory Circuit, 53984X1, CMOS, PDIP8, PLASTIC, DIP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | - | XILINX INC | 1 | 53984 words | 53984 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, | - | RECTANGULAR | IN-LINE | Obsolete | DIP | Yes | 5 V | e3 | Yes | EAR99 | Matte Tin (Sn) | - | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | 30 | 8 | R-PDIP-T8 | Not Qualified | 5.25 V | COMMERCIAL | 4.75 V | SYNCHRONOUS | - | 53984X1 | 4.5974 mm | 1 | - | 53984 bit | MEMORY CIRCUIT | - | 9.3599 mm | 7.62 mm | ||
| XC17S05PDG8C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71NS256NC0BJWVN3Anlielectronics Тип | Spansion |
Memory Circuit, 16MX16, CMOS, PBGA60, 11 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, VFBGA-60
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 60 | - | SPANSION INC | 3 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 11 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, VFBGA-60 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e2 | - | EAR99 | TIN SILVER COPPER NICKEL | PSRAM IS ORGANIZED AS 16M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | 40 | 60 | R-PBGA-B60 | Not Qualified | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | - | 16MX16 | 1.2 mm | 16 | - | 268435456 bit | MEMORY CIRCUIT | - | 11 mm | 10 mm | ||
| S71NS256NC0BJWVN3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипUPD41101C-2Anlielectronics Тип | NEC Electronics Group |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| UPD41101C-2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипUPD41101C-2Anlielectronics Тип | Renesas Electronics Corporation |
IC,FIELD/FRAME/LINE MEMORY,CMOS,DIP,24PIN,PLASTIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 24 | 27 ns | RENESAS ELECTRONICS CORP | - | - | - | 70 °C | -20 °C | PLASTIC/EPOXY | DIP | DIP-24 | DIP24,.3 | RECTANGULAR | IN-LINE | Obsolete | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.71 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | - | R-PDIP-T24 | Not Qualified | - | COMMERCIAL | - | - | 0.09 mA | - | - | - | 0.09 A | - | MEMORY CIRCUIT | - | - | - | ||
| UPD41101C-2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипCY7C274-55QMBAnlielectronics Тип | Teledyne e2v |
Memory IC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | E2V TECHNOLOGIES PLC | - | - | - | - | - | - | - | , | - | - | - | Active | - | - | - | - | - | 3A001.A.2.C | - | - | 8542.32.00.61 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| CY7C274-55QMB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипNAND98R3M0AZBB5EAnlielectronics Тип | Numonyx Memory Solutions |
Memory Circuit, Flash SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 107 | - | NUMONYX | - | - | - | 85 °C | -30 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA107,10X14,32 | BGA107,10X14,32 | RECTANGULAR | GRID ARRAY | Obsolete | BGA | Yes | 1.8 V | - | Yes | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | NOT SPECIFIED | - | 0.8 mm | unknown | NOT SPECIFIED | 107 | R-PBGA-B107 | Not Qualified | - | OTHER | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | FLASH+SDRAM | - | - | ||
| NAND98R3M0AZBB5E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипXC17S05XLVOG8CAnlielectronics Тип | AMD Xilinx |
Memory Circuit, 54544X1, CMOS, PDSO8, PLASTIC, TSOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | - | XILINX INC | 3 | 54544 words | 54544 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | Yes | 3.3 V | e3 | Yes | EAR99 | Matte Tin (Sn) | - | 8542.32.00.71 | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | 30 | 8 | R-PDSO-G8 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | SYNCHRONOUS | - | 54544X1 | 1.2 mm | 1 | - | 54544 bit | MEMORY CIRCUIT | - | 4.9 mm | 3.9 mm | ||
| XC17S05XLVOG8C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипM4-4102R-Z2Anlielectronics Тип | Moujen Switch |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| M4-4102R-Z2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS72NS256PD0AJBLG2Anlielectronics Тип | Spansion |
Memory Circuit, 16MX16, CMOS, PBGA133, 8 X 8 MM, 0.50 MM PITCH, LEAD FREE, FBGA-133
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 133 | - | SPANSION INC | 3 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 8 X 8 MM, 0.50 MM PITCH, LEAD FREE, FBGA-133 | - | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e2 | - | EAR99 | TIN SILVER COPPER NICKEL | DRAM IS ORGANISED AS 16M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | 40 | 133 | S-PBGA-B133 | Not Qualified | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | - | 16MX16 | 1.1 mm | 16 | - | 268435456 bit | MEMORY CIRCUIT | - | 8 mm | 8 mm | ||
| S72NS256PD0AJBLG2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипXC17S40PDG8CAnlielectronics Тип | AMD Xilinx |
Description: Memory Circuit, 329312X1, CMOS, PDIP8, PLASTIC, DIP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | - | XILINX INC | 1 | 329312 words | 329312 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, | - | RECTANGULAR | IN-LINE | Obsolete | DIP | Yes | 5 V | e3 | Yes | EAR99 | Matte Tin (Sn) | - | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | 30 | 8 | R-PDIP-T8 | Not Qualified | 5.25 V | COMMERCIAL | 4.75 V | SYNCHRONOUS | - | 329312X1 | 4.5974 mm | 1 | - | 329312 bit | MEMORY CIRCUIT | - | 9.3599 mm | 7.62 mm | ||
| XC17S40PDG8C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипICM-45631Anlielectronics Тип | TDK Corporation |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| ICM-45631 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипXC17S30PDG8CAnlielectronics Тип | AMD Xilinx |
Memory Circuit, 247968X1, CMOS, PDIP8, PLASTIC, DIP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | - | XILINX INC | 1 | 247968 words | 247968 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, | - | RECTANGULAR | IN-LINE | Obsolete | DIP | Yes | 5 V | e3 | Yes | EAR99 | Matte Tin (Sn) | - | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | 30 | 8 | R-PDIP-T8 | Not Qualified | 5.25 V | COMMERCIAL | 4.75 V | SYNCHRONOUS | - | 247968X1 | 4.5974 mm | 1 | - | 247968 bit | MEMORY CIRCUIT | - | 9.3599 mm | 7.62 mm | ||
| XC17S30PDG8C |
Индекс :
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