EMB12N03V
Mult. :
Соответствующие детали
EMB20N03V
Excelliance MOS Corporation
Power Field-Effect Transistor, 12A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8
EMB06K03HP
Excelliance MOS Corporation
Power Field-Effect Transistor, 15A I(D), 30V, 0.0095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8
EMF60P02J
Excelliance MOS Corporation
Power Field-Effect Transistor, 4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
NE5820M53-T1-A
CEL
TRANS P CH 6V 17MA 3 PIN
NE5820M53-A
CEL
TRANS P CH 6V 17MA 3 PIN