- Все продукты
- /
- Discrete Semiconductor Products
- /
- Diodes - Bridge Rectifiers
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Material | Diode Element Material | Number of Terminals | Exterior Housing Material | Cable cross-section | Connector | Connector pinout layout | Contacts pitch | Diameter of incoming cable | Electrical mounting | Forward Voltage-Max (VF) | Gross Weight | Ihs Manufacturer | Kind of connector | Mfr | Nominal voltage | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Spatial orientation | Type of connector | Operating Temperature | Packaging | JESD-609 Code | Part Status | ECCN Code | Type | Terminal Finish | Color | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Output | Reference Standard | JESD-30 Code | Configuration | Number of Channels | Polarization | Diode Type | Case Connection | Accuracy | Output Current-Max | Number of Phases | Operating Temperature Range | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Sensor Type | Non-rep Pk Forward Current-Max | Reverse Current-Max | For Measuring | Breakdown Voltage-Min | Reverse Recovery Time-Max | Reverse Test Voltage | Output Range | 2nd Connector Number of Positions Loaded | Profile | Cavity C | Diameter | Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипUS3DAnlielectronics Тип | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode, 1 Element, 3A, 200V V(RRM),
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | - | - | - | - | 1 V | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | R-PDSO-C2 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.10.00.80 | - | DUAL | C BEND | 260 | - | unknown | - | - | - | - | R-PDSO-C2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 3 A | 1 | - | 200 V | - | - | 100 A | 10 μA | - | - | 0.05 μs | - | - | EFFICIENCY | - | - | - | - | ||
| US3D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипR4000FAnlielectronics Тип | Galaxy Microelectronics |
Fast Recovery Rectifier, VRRM MAX (V): 4000V; IAV MAX (A): 0.2A; VFM MAX (V): 6.5V; @ IF (A): 0.2A; IFSM MAX (A): 30A; IR MAX (UA): 5uA; @VR (V): 4000V; TRR MAX (NS): 500ns; Package: DO-15
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | - | SILICON | - | 1 | - | - | - | - | - | - | 6.5 V | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | 150 °C | - | - | - | - | - | Active | DO-15 | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | 260 | - | unknown | - | - | - | - | - | SINGLE | - | - | RECTIFIER DIODE | - | - | 0.2 A | 1 | - | 4000 V | - | - | 30 A | - | - | - | 0.5 μs | - | - | - | - | - | - | - | ||
| R4000F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBAV70TAnlielectronics Тип | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Chassis Mount | Module | YES | Module | - | SILICON | 3 | 2 | - | - | - | - | - | - | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | Advantech Corp | - | 150 °C | -65 °C | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | -20°C ~ 55°C | Box | - | Active | EAR99 | - | - | - | - | 8541.10.00.70 | 3.6V | DUAL | GULL WING | NOT SPECIFIED | - | unknown | DC ~ 8kHz | NOT SPECIFIED | Current | - | R-PDSO-G3 | COMMON CATHODE, 2 ELEMENTS | 1 | Unidirectional | RECTIFIER DIODE | - | ±1% | 0.155 A | - | - | 85 V | - | Magnetoresistive | - | - | DC | - | 0.004 μs | - | 0.15 W | - | - | 75A | - | - | ||
| BAV70T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBAV199Anlielectronics Тип | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 3 | 2 | - | - | - | - | - | - | 1.25 V | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | 150 °C | -65 °C | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.10.00.70 | - | DUAL | GULL WING | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | - | - | R-PDSO-G3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | - | - | RECTIFIER DIODE | - | - | 0.16 A | 1 | - | 85 V | - | - | 4 A | 0.005 μA | - | 85 V | 0.003 μs | 75 V | 0.25 W | GENERAL PURPOSE | - | - | - | - | ||
| BAV199 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRB751S-40Anlielectronics Тип | Galaxy Semi-Conductor Co Ltd |
Description: Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | - | - | - | - | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | 125 °C | - | PLASTIC/EPOXY | R-PDSO-F2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | EAR99 | - | - | - | HIGH RELIABILITY | 8541.10.00.70 | - | DUAL | FLAT | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | - | - | R-PDSO-F2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 0.03 A | 1 | - | 40 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RB751S-40 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRB521S-30Anlielectronics Тип | Galaxy Microelectronics |
Description: Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 30V; IAV Max (A): 0.2; VFM Max (V): 0.5V; @ IF (A): 0.2A; IR Max (uA): 30uA; @VR (V): 10V; Pin: F1; Package: SOD-523
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | - | - | - | - | 0.5 V | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | 125 °C | - | PLASTIC/EPOXY | SOD-523, 2 PIN | RECTANGULAR | SMALL OUTLINE | Active | SOD-523 | Yes | - | - | - | - | e3 | - | EAR99 | - | TIN | - | - | 8541.10.00.70 | - | DUAL | FLAT | - | - | unknown | - | - | - | - | R-PDSO-F2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 0.2 A | 1 | - | 30 V | - | - | 1 A | 30 μA | - | - | - | 10 V | - | GENERAL PURPOSE | - | - | - | - | ||
| RB521S-30 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSS510AAnlielectronics Тип | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | - | - | - | - | 0.85 V | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | 32 (DC) V | 150 °C | -55 °C | PLASTIC/EPOXY | R-PDSO-C2 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.10.00.80 | - | DUAL | C BEND | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | - | - | R-PDSO-C2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 5 A | 1 | - | 100 V | - | - | 150 A | 250 μA | - | - | - | - | - | GENERAL PURPOSE | - | - | - | - | ||
| SS510A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD25XB80Anlielectronics Тип | Galaxy Microelectronics |
Description: Bridge Rectifier Diode, 25A, 800V V(RRM),
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | - | - | - | 4 | - | - | - | - | - | - | 1.05 V | 28.60 | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | 150 °C | - | - | - | - | - | Contact Manufacturer | - | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | 260 | - | unknown | - | - | - | - | - | BRIDGE, 4 ELEMENTS | - | - | BRIDGE RECTIFIER DIODE | - | - | 25 A | 1 | - | 800 V | - | - | 350 A | - | - | 800 V | - | - | - | - | - | - | - | - | ||
| D25XB80 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRB160M-30Anlielectronics Тип | Galaxy Microelectronics |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, SOD-123, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | connector housing - PVC-45P | SILICON | 2 | 1 | 3 x 0.75 (42 strands x 0.15mm) mm2 | - | - | - | - | - | 0.48 V | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | 250 V | 125 °C | - | PLASTIC/EPOXY | SOD-123, 2 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | - | HIGH RELIABILITY | - | - | DUAL | GULL WING | - | - | unknown | - | - | - | - | R-PDSO-G2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 1 A | 1 | - | 30 V | - | - | 30 A | 50 μA | - | - | - | 30 V | 0.4 W | GENERAL PURPOSE | - | - | sheath - 6.5 …6.8 mm | 1800 mm | ||
| RB160M-30 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMUR1060Anlielectronics Тип | Galaxy Microelectronics |
Super Fast Recovery Rectifier, VRRM MAX (V): 600V; IAV MAX (A): 10A; VFM MAX (V): 1.5V; @ IF (A): 10A; IFSM MAX (A): 125A; IR MAX (UA): 10uA; @VR (V): 600V; TRR MAX (NS): 50ns; Package: TO-220AC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | - | SILICON | 2 | 1 | - | - | - | - | up to 9.8 mm | - | 1.5 V | 0.64 | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | TO-220AC | - | - | - | - | - | - | - | EAR99 | Plastic cable gland SB series (budget) | - | black | - | 8541.10.00.80 | - | SINGLE | THROUGH-HOLE | - | 10.2 mm | unknown | - | - | - | MIL-STD-202 | R-PSFM-T2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 10 A | 1 | -20...+70 °C | 600 V | TO-220AC | - | 100 A | 10 μA | - | 600 V | 0.05 μs | 600 V | - | SUPER FAST RECOVERY | - | - | - | - | ||
| MUR1060 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMBRD10150CTGAnlielectronics Тип | Galaxy Microelectronics |
Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MBRD10150CTG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBAS40WSAnlielectronics Тип | Galaxy Microelectronics |
Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 40V; IAV Max (A): 0.2A; VFM Max (V): 0.5V; @ IF (A): 0.01A; IR Max (uA): 0.2uA; @VR (V): 30V; TRR Max (ns): 5ns; Pin: F1; Package: SOD-323
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | - | - | - | - | 1 V | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | 125 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | SOD-323 | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.10.00.70 | - | DUAL | GULL WING | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | - | MIL-STD-202 | R-PDSO-G2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 0.2 A | 1 | - | 40 V | - | - | 0.6 A | 0.2 μA | - | - | 0.005 μs | 30 V | 0.2 W | FAST RECOVERY | - | - | - | - | ||
| BAS40WS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBAT46WAnlielectronics Тип | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | - | - | - | - | 1 V | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | 125 °C | - | PLASTIC/EPOXY | R-PDSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.10.00.70 | - | DUAL | GULL WING | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | - | - | R-PDSO-G2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 0.15 A | 1 | - | 100 V | - | - | 0.75 A | 5 μA | - | 100 V | - | 75 V | 0.2 W | FAST RECOVERY | - | - | - | - | ||
| BAT46W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSF28Anlielectronics Тип | Galaxy Microelectronics |
Super Fast Recovery Rectifier, VRRM MAX (V): 600V; IAV MAX (A): 2A; VFM MAX (V): 1.7V; @ IF (A): 2A; IFSM MAX (A): 50A; IR MAX (UA): 10uA; @VR (V): 600V; TRR MAX (NS): 35ns; Package: DO-15
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | - | SILICON | 2 | 1 | - | - | - | - | - | - | 1.7 V | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | 125 °C | -55 °C | PLASTIC/EPOXY | - | ROUND | LONG FORM | Active | DO-15 | - | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.10.00.80 | - | AXIAL | WIRE | - | - | unknown | - | - | - | - | O-PALF-W2 | SINGLE | - | - | RECTIFIER DIODE | ISOLATED | - | 2 A | 1 | - | 600 V | DO-15 | - | 50 A | 5 μA | - | - | 0.035 μs | 600 V | - | SUPER FAST RECOVERY | - | - | - | - | ||
| SF28 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS07MAnlielectronics Тип | Galaxy Microelectronics |
Rectifier Diode, 1 Element, 0.7A, 1000V V(RRM),
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | socket | 1x10 | 2.54mm | - | THT | 1.1 V | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | female | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | SOD - 123FL, 2 PIN | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | - | straight | pin strips | - | - | - | - | EAR99 | - | - | - | LOW LEAKAGE CURRENT | 8541.10.00.80 | - | DUAL | FLAT | - | - | unknown | - | - | - | - | R-PDSO-F2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 0.7 A | 1 | - | 1000 V | - | - | 25 A | 10 μA | - | - | 1.8 μs | 1000 V | - | GENERAL PURPOSE | beryllium copper | - | - | - | ||
| S07M | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBAS70HAnlielectronics Тип | Galaxy Microelectronics |
Description: Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | - | - | - | - | 1 V | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | 125 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.10.00.70 | - | DUAL | GULL WING | - | - | unknown | - | - | - | MIL-STD-202 | R-PDSO-G2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 0.07 A | 1 | - | 70 V | - | - | 0.1 A | 0.1 μA | - | - | 0.005 μs | 50 V | 0.4 W | GENERAL PURPOSE | - | - | - | - | ||
| BAS70H | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRB520S-40Anlielectronics Тип | Galaxy Microelectronics |
Description: Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.2A, 40V V(RRM), Silicon, SOD-523, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | - | - | - | - | 0.55 V | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | 125 °C | -40 °C | PLASTIC/EPOXY | SOD-523, 2 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | - | HIGH RELIABILITY | - | - | DUAL | FLAT | - | - | unknown | - | - | - | MIL-STD-202 | R-PDSO-F2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 0.2 A | 1 | - | 40 V | - | - | 1 A | 10 μA | - | 40 V | - | 40 V | 0.15 W | GENERAL PURPOSE | - | - | - | - | ||
| RB520S-40 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMBR10200Anlielectronics Тип | Galaxy Microelectronics |
Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 200V; IAV Max (A): 10A; VFM Max (V): 0.9V; @ IF (A): 10A; IFSM Max (A): 150A; IR Max (uA): 100uA; @VR (V): 200V; Package: TO-220AC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | - | SILICON | 2 | 1 | - | - | - | - | - | - | 0.95 V | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | TO-220AC | - | - | - | - | - | - | - | - | - | - | - | FREE WHEELING DIODE | - | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | - | R-PSFM-T2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 10 A | 1 | - | 200 V | TO-220AC | - | 150 A | 100 μA | - | 200 V | - | 200 V | - | GENERAL PURPOSE | - | - | - | - | ||
| MBR10200 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBAT46WSAnlielectronics Тип | Galaxy Microelectronics |
Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | - | - | - | - | 1 V | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | 125 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.10.00.70 | - | DUAL | GULL WING | - | - | unknown | - | - | - | MIL-STD-202 | R-PDSO-G2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 0.15 A | 1 | - | 100 V | - | - | 0.75 A | 20 μA | - | 100 V | - | 75 V | 0.2 W | FAST RECOVERY | - | - | - | - | ||
| BAT46WS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMBR30100PTAnlielectronics Тип | Galaxy Microelectronics |
Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | NO | - | - | SILICON | 3 | 2 | - | - | - | - | - | - | 0.95 V | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-3P, 3 PIN | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | - | - | - | - | - | - | - | - | EAR99 | - | - | - | FREE WHEELING DIODE | 8541.10.00.80 | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | - | R-PSFM-T3 | COMMON CATHODE, 2 ELEMENTS | - | - | RECTIFIER DIODE | - | - | 15 A | 1 | - | 100 V | TO-247AD | - | 200 A | 200 μA | - | - | - | 100 V | - | GENERAL PURPOSE | - | - | - | - | ||
| MBR30100PT |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ