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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Contact plating | Mounting Type | Package / Case | Surface Mount | Number of pins | Supplier Device Package | Housing material | Weight | Diode Element Material | Number of Terminals | Mounting hole diameter | Exterior Housing Material | Backlight voltage | Button and head shape | Connector | Connector pinout layout | Contacts pitch | Dielectric strength | Electrical mounting | Forward Voltage-Max (VF) | Gross weight | Gross Weight | Head and button shape | Ihs Manufacturer | Illuation color | Illumination voltage | Indicator type | Kind of connector | LED operating life | LED working life | Mfr | Mounting diameter | Nominal current | Nominal voltage | Number of contacts in group/groups (total contacts) | Number of switching cycles (electrical) | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Protection class | Relative humidity | Rohs Code | Shipping Package size/quantity | Spatial orientation | Switching cycles (electrical) | Switching scheme | Teral type | Transport packaging size/quantity | Type of connector | Working temperature range | Operating temperature | Operating Temperature | Packaging | JESD-609 Code | Part Status | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Current rating | Frequency | Time@Peak Reflow Temperature-Max (s) | Output | Reference Standard | JESD-30 Code | Contact resistance | Configuration | Insulation resistance | Number of Channels | Polarization | Diode Type | Case Connection | Accuracy | Switch type | Output Current-Max | Fuse type | Number of Phases | Operating temperature range | Rated current | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Sensor Type | Non-rep Pk Forward Current-Max | Reverse Current-Max | For Measuring | Rated voltage | Breakdown Voltage-Min | Reverse Recovery Time-Max | Reverse Test Voltage | Output Range | 2nd Connector Number of Positions Loaded | Profile | Cavity C | Contacts | Backlight color | Diameter | Height | Width | Plating thickness | Flammability rating |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипMBRD10150CTGAnlielectronics Тип | Galaxy Microelectronics |
Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MBRD10150CTG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBAS40WSAnlielectronics Тип | Galaxy Microelectronics |
Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 40V; IAV Max (A): 0.2A; VFM Max (V): 0.5V; @ IF (A): 0.01A; IR Max (uA): 0.2uA; @VR (V): 30V; TRR Max (ns): 5ns; Pin: F1; Package: SOD-323
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | SILICON | 2 | - | 1 | - | - | - | - | - | - | - | 1 V | - | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | 125 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | SOD-323 | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | 8541.10.00.70 | - | DUAL | GULL WING | NOT SPECIFIED | - | unknown | - | - | NOT SPECIFIED | - | MIL-STD-202 | R-PDSO-G2 | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | 0.2 A | - | 1 | - | - | 40 V | - | - | 0.6 A | 0.2 μA | - | - | - | 0.005 μs | 30 V | 0.2 W | FAST RECOVERY | - | - | - | - | - | - | - | - | - | ||
| BAS40WS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBAT46WAnlielectronics Тип | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | SILICON | 2 | - | 1 | - | - | - | - | - | - | - | 1 V | - | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | 125 °C | - | PLASTIC/EPOXY | R-PDSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | 8541.10.00.70 | - | DUAL | GULL WING | NOT SPECIFIED | - | unknown | - | - | NOT SPECIFIED | - | - | R-PDSO-G2 | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | 0.15 A | - | 1 | - | - | 100 V | - | - | 0.75 A | 5 μA | - | - | 100 V | - | 75 V | 0.2 W | FAST RECOVERY | - | - | - | - | - | - | - | - | - | ||
| BAT46W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSF28Anlielectronics Тип | Galaxy Microelectronics |
Super Fast Recovery Rectifier, VRRM MAX (V): 600V; IAV MAX (A): 2A; VFM MAX (V): 1.7V; @ IF (A): 2A; IFSM MAX (A): 50A; IR MAX (UA): 10uA; @VR (V): 600V; TRR MAX (NS): 35ns; Package: DO-15
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | - | SILICON | 2 | - | 1 | - | - | - | - | - | - | - | 1.7 V | - | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | 125 °C | -55 °C | PLASTIC/EPOXY | - | ROUND | LONG FORM | Active | DO-15 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | 8541.10.00.80 | - | AXIAL | WIRE | - | - | unknown | - | - | - | - | - | O-PALF-W2 | - | SINGLE | - | - | - | RECTIFIER DIODE | ISOLATED | - | - | 2 A | - | 1 | - | - | 600 V | DO-15 | - | 50 A | 5 μA | - | - | - | 0.035 μs | 600 V | - | SUPER FAST RECOVERY | - | - | - | - | - | - | - | - | - | ||
| SF28 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRS405LAnlielectronics Тип | Galaxy Microelectronics |
Bridge Rectifier Diode, 4A, 600V V(RRM),
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | - | nickel-plated brass | 15.60 | - | - | - | 4 | - | - | - | - | - | 2000 (50 Hz / 1 min) V | - | 1 V | - | - | flat ring and button | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | redmin | 12 V | dot | - | - | 40000 hours min | - | 16 mm | - | - | - | - | 150 °C | - | - | - | - | - | Contact Manufacturer | - | IP65 | 45…85 % | Yes | - | - | 200000 min | OFF-ON with fixation | - | 62*27*28/150 | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | 260 | - | unknown | - | - | - | - | - | - | 50 mΩ max | BRIDGE, 4 ELEMENTS | 1000 MΩ min | - | - | BRIDGE RECTIFIER DIODE | - | - | GQ16 series vandal-proof button with illumination | 4 A | - | 1 | -25…+55 °C | 2 A | 600 V | - | - | 150 A | - | - | - | 600 V | - | - | - | - | - | - | 2Pin+2Pin | - | 18 mm | - | - | - | - | ||
| RS405L | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSR560Anlielectronics Тип | Galaxy Microelectronics |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 60V V(RRM), Silicon, DO-27,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | - | nickel-plated brass | - | SILICON | 2 | - | 1 | 12 V | flat ring and button | - | - | - | 2000 (50 Hz / 5 s) V | - | 0.7 V | 81.50 | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | ring | - | ≥40000 hours | - | - | 30 mm | 5 A | 250 V | - | ≥50000 | 150 °C | -55 °C | PLASTIC/EPOXY | - | ROUND | LONG FORM | Active | - | IP65 | 45...85 % | Yes | - | - | - | ON-(OFF) + OFF-(ON) without fixation | - | 62*27.5*28/100 | - | - | - | - | - | - | - | EAR99 | - | FREE WHEELING DIODE | 8541.10.00.80 | - | AXIAL | WIRE | 260 | - | unknown | - | - | - | - | MIL-STD-202 | O-PALF-W2 | ≤50 mΩ | SINGLE | ≥1000 MΩ | - | - | RECTIFIER DIODE | ISOLATED | - | GQ30 series vandal-resistant button with backlight | 5 A | - | 1 | -25…+55 °C | - | 60 V | DO-27 | - | 150 A | 500 μA | - | - | 60 V | - | 60 V | - | GENERAL PURPOSE | - | - | 4Pin+2Pin | green | 35 mm | - | - | - | - | ||
| SR560 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBAS70HAnlielectronics Тип | Galaxy Microelectronics |
Description: Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | SILICON | 2 | - | 1 | - | - | - | - | - | - | - | 1 V | - | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | 125 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | 8541.10.00.70 | - | DUAL | GULL WING | - | - | unknown | - | - | - | - | MIL-STD-202 | R-PDSO-G2 | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | 0.07 A | - | 1 | - | - | 70 V | - | - | 0.1 A | 0.1 μA | - | - | - | 0.005 μs | 50 V | 0.4 W | GENERAL PURPOSE | - | - | - | - | - | - | - | - | - | ||
| BAS70H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS07MAnlielectronics Тип | Galaxy Microelectronics |
Rectifier Diode, 1 Element, 0.7A, 1000V V(RRM),
Сборник данных
Сравнение
| Min.:1 Mult.:1 | gold-plated | - | - | YES | 10 | - | - | - | SILICON | 2 | - | 1 | - | - | socket | 1x10 | 2.54mm | - | THT | 1.1 V | 0.97 g | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | female | - | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | SOD - 123FL, 2 PIN | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | - | - | - | - | straight | - | - | - | - | pin strips | - | -40...163°C | - | - | - | - | EAR99 | - | LOW LEAKAGE CURRENT | 8541.10.00.80 | - | DUAL | FLAT | - | - | unknown | 3A | - | - | - | - | R-PDSO-F2 | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | 0.7 A | - | 1 | - | - | 1000 V | - | - | 25 A | 10 μA | - | 150V | - | 1.8 μs | 1000 V | - | GENERAL PURPOSE | beryllium copper | - | - | - | - | - | - | 0.254µm | UL94V-0 | ||
| S07M | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRB520S-40Anlielectronics Тип | Galaxy Microelectronics |
Description: Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.2A, 40V V(RRM), Silicon, SOD-523, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | SILICON | 2 | - | 1 | - | - | - | - | - | - | - | 0.55 V | - | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | 125 °C | -40 °C | PLASTIC/EPOXY | SOD-523, 2 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | HIGH RELIABILITY | - | - | DUAL | FLAT | - | - | unknown | - | - | - | - | MIL-STD-202 | R-PDSO-F2 | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | 0.2 A | - | 1 | - | - | 40 V | - | - | 1 A | 10 μA | - | - | 40 V | - | 40 V | 0.15 W | GENERAL PURPOSE | - | - | - | - | - | - | - | - | - | ||
| RB520S-40 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMUR560Anlielectronics Тип | Galaxy Microelectronics |
Super Fast Recovery Rectifier, VRRM MAX (V): 600V; IAV MAX (A): 5A; VFM MAX (V): 1.5V; @ IF (A): 5A; IFSM MAX (A): 60A; IR MAX (UA): 10uA; @VR (V): 600V; TRR MAX (NS): 50ns; Package: TO-220AC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | - | SILICON | 2 | - | 1 | - | - | - | - | - | - | - | 1.5 V | - | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | TO-220AC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | - | - | R-PSFM-T2 | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | 5 A | - | 1 | - | - | 600 V | TO-220AC | - | 60 A | 10 μA | - | - | 600 V | 0.05 μs | 600 V | - | SUPER FAST RECOVERY | - | - | - | - | - | - | - | - | - | ||
| MUR560 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBAV74Anlielectronics Тип | Galaxy Semi-Conductor Co Ltd |
Description: Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | SILICON | 3 | 12.2 mm | 2 | - | - | - | - | - | 1500 (50 Hz, 1 min.) V | - | 1 V | - | 35.40 | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | - | - | - | - | - | - | - | 3/ 2 (6S) | ≥10000 | 150 °C | - | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | (ON)-OFF-(ON), DPDT C/O | for screwmin | 35*30*24.5/500 | - | -25…+70 °C | - | - | - | - | - | EAR99 | - | - | 8541.10.00.70 | - | DUAL | GULL WING | - | 53.5 mm | unknown | - | - | - | - | - | R-PDSO-G3 | 50 mOhm max | COMMON CATHODE, 2 ELEMENTS | ≥1000 (at Uinsp.dc=500 V) MOhm | - | - | RECTIFIER DIODE | - | - | - | 0.1 A | - | 1 | - | 3 (5), Imax=6 A | 50 V | - | - | 4.5 A | 0.1 μA | - | 250 (125) V | 50 V | 0.004 μs | 50 V | 0.25 W | GENERAL PURPOSE | - | - | - | - | - | 33.5 mm | 19.5 mm | - | - | ||
| BAV74 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBAS521Anlielectronics Тип | Galaxy Microelectronics |
Rectifier Diode, 1 Phase, 1 Element, 0.25A, 300V V(RRM), Silicon, SOD-523, 2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | SILICON | 2 | - | 1 | - | - | - | - | - | - | - | 1.1 V | - | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -65 °C | PLASTIC/EPOXY | SOD-523, 2 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DUAL | FLAT | - | - | unknown | - | - | - | - | - | R-PDSO-F2 | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | 0.25 A | - | 1 | - | - | 300 V | - | - | 4.5 A | 100 μA | - | - | 300 V | 0.05 μs | 250 V | 0.5 W | HIGH VOLTAGE | - | - | - | - | - | - | - | - | - | ||
| BAS521 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипUS3DAnlielectronics Тип | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode, 1 Element, 3A, 200V V(RRM),
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | SILICON | 2 | - | 1 | - | - | - | - | - | - | - | 1 V | - | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | R-PDSO-C2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | 8541.10.00.80 | - | DUAL | C BEND | 260 | - | unknown | - | - | - | - | - | R-PDSO-C2 | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | 3 A | - | 1 | - | - | 200 V | - | - | 100 A | 10 μA | - | - | - | 0.05 μs | - | - | EFFICIENCY | - | - | - | - | - | - | - | - | - | ||
| US3D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипR4000FAnlielectronics Тип | Galaxy Microelectronics |
Fast Recovery Rectifier, VRRM MAX (V): 4000V; IAV MAX (A): 0.2A; VFM MAX (V): 6.5V; @ IF (A): 0.2A; IFSM MAX (A): 30A; IR MAX (UA): 5uA; @VR (V): 4000V; TRR MAX (NS): 500ns; Package: DO-15
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | - | SILICON | - | - | 1 | - | - | - | - | - | - | - | 6.5 V | - | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Active | DO-15 | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | 260 | - | unknown | - | - | - | - | - | - | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | 0.2 A | - | 1 | - | - | 4000 V | - | - | 30 A | - | - | - | - | 0.5 μs | - | - | - | - | - | - | - | - | - | - | - | - | ||
| R4000F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBAV70TAnlielectronics Тип | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Chassis Mount | Module | YES | - | Module | - | - | SILICON | 3 | - | 2 | - | - | - | - | - | - | - | - | - | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | - | - | - | Advantech Corp | - | - | - | - | - | 150 °C | -65 °C | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | -20°C ~ 55°C | Box | - | Active | EAR99 | - | - | 8541.10.00.70 | 3.6V | DUAL | GULL WING | NOT SPECIFIED | - | unknown | - | DC ~ 8kHz | NOT SPECIFIED | Current | - | R-PDSO-G3 | - | COMMON CATHODE, 2 ELEMENTS | - | 1 | Unidirectional | RECTIFIER DIODE | - | ±1% | - | 0.155 A | - | - | - | - | 85 V | - | Magnetoresistive | - | - | DC | - | - | 0.004 μs | - | 0.15 W | - | - | 75A | - | - | - | - | - | - | - | ||
| BAV70T | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBAV199Anlielectronics Тип | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | SILICON | 3 | - | 2 | - | - | - | - | - | - | - | 1.25 V | - | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -65 °C | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | 8541.10.00.70 | - | DUAL | GULL WING | NOT SPECIFIED | - | unknown | - | - | NOT SPECIFIED | - | - | R-PDSO-G3 | - | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | - | - | - | RECTIFIER DIODE | - | - | - | 0.16 A | - | 1 | - | - | 85 V | - | - | 4 A | 0.005 μA | - | - | 85 V | 0.003 μs | 75 V | 0.25 W | GENERAL PURPOSE | - | - | - | - | - | - | - | - | - | ||
| BAV199 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRB751S-40Anlielectronics Тип | Galaxy Semi-Conductor Co Ltd |
Description: Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | SILICON | 2 | - | 1 | - | - | - | - | - | - | - | - | - | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | 125 °C | - | PLASTIC/EPOXY | R-PDSO-F2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | HIGH RELIABILITY | 8541.10.00.70 | - | DUAL | FLAT | NOT SPECIFIED | - | unknown | - | - | NOT SPECIFIED | - | - | R-PDSO-F2 | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | 0.03 A | - | 1 | - | - | 40 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RB751S-40 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRB521S-30Anlielectronics Тип | Galaxy Microelectronics |
Description: Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 30V; IAV Max (A): 0.2; VFM Max (V): 0.5V; @ IF (A): 0.2A; IR Max (uA): 30uA; @VR (V): 10V; Pin: F1; Package: SOD-523
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | SILICON | 2 | - | 1 | - | - | - | - | - | - | - | 0.5 V | 0.71 | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | 125 °C | - | PLASTIC/EPOXY | SOD-523, 2 PIN | RECTANGULAR | SMALL OUTLINE | Active | SOD-523 | - | - | Yes | - | - | - | - | - | 48*31.5*27/20000 | - | - | -40 …+125 °C | - | - | e3 | - | EAR99 | TIN | - | 8541.10.00.70 | - | DUAL | FLAT | - | - | unknown | - | - | - | - | - | R-PDSO-F2 | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | 0.2 A | Melting insert series S1035 | 1 | - | 5 A | 30 V | - | - | 1 A | 30 μA | - | 32 (DC) V | - | - | 10 V | - | GENERAL PURPOSE | - | - | - | - | - | - | - | - | - | ||
| RB521S-30 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSS510AAnlielectronics Тип | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | SILICON | 2 | - | 1 | - | - | - | - | - | - | - | 0.85 V | 0.71 | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | - | - | - | - | - | - | 32 (DC) V | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | R-PDSO-C2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | - | 48*31.5*27/20000 | - | - | -40 …+125 °C | - | - | - | - | EAR99 | - | - | 8541.10.00.80 | - | DUAL | C BEND | NOT SPECIFIED | - | unknown | 20 A | - | NOT SPECIFIED | - | - | R-PDSO-C2 | - | SINGLE | - | - | - | RECTIFIER DIODE | - | - | - | 5 A | S1035 series fusible insert | 1 | - | - | 100 V | - | - | 150 A | 250 μA | - | - | - | - | - | - | GENERAL PURPOSE | - | - | - | - | - | - | - | - | - | ||
| SS510A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипD25XB80Anlielectronics Тип | Galaxy Microelectronics |
Description: Bridge Rectifier Diode, 25A, 800V V(RRM),
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | - | - | - | - | 4 | - | - | - | - | - | - | - | 1.05 V | - | 28.60 | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Contact Manufacturer | - | - | - | Yes | 42*28*23.5/500 | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | 260 | - | unknown | - | - | - | - | - | - | - | BRIDGE, 4 ELEMENTS | - | - | - | BRIDGE RECTIFIER DIODE | - | - | - | 25 A | - | 1 | - | - | 800 V | - | - | 350 A | - | - | - | 800 V | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| D25XB80 |
Индекс :
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