- Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - Bipolar (BJT) - Single
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Collector Current (Ic) | Collector Cut-Off Current (Icbo) | Collector-Emitter Breakdown Voltage (Vceo) | Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | DC Current Gain (hFE@Ic,Vce) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Pd) | RoHS | Rohs Code | Transition Frequency (fT) | Transition Frequency-Nom (fT) | Operating Temperature | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Transistor Application | Polarity/Channel Type | Transistor Type | JEDEC-95 Code | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Collector-Emitter Voltage-Max | VCEsat-Max | Highest Frequency Band | Collector-Base Capacitance-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипBC160Anlielectronics Тип | Micro Electronics Corporation |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | - | - | - | - | MICRO ELECTRONICS LTD | - | 175 °C | - | - | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | Contact Manufacturer | TO-39 | - | - | - | - | 50 MHz | - | - | - | EAR99 | - | BOTTOM | WIRE | unknown | 3 | O-MBCY-W3 | Not Qualified | SINGLE | SWITCHING | PNP | - | TO-39 | 3.7 W | 1 A | 40 | 40 V | - | - | - | ||
| BC160 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипD882Anlielectronics Тип | WPMtek(Wei Pan Microelectronics) |
30V 500mW 400@1A,2V 3A NPN SOT-89-3L Bipolar (BJT) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 3A | 1uA | 30V | 500mV@2A,200mA | 400@1A,2V | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | 500mW | true | - | 50MHz | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | ||
| D882 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSS8550Anlielectronics Тип | WPMtek(Wei Pan Microelectronics) |
25V 625mW 400@100mA,1V 1.5A PNP SOT-23 Bipolar (BJT) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 1.5A | 100nA | 25V | 500mV@800mA,80mA | 400@100mA,1V | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | 625mW | true | - | 100MHz | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | ||
| SS8550 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS9015Anlielectronics Тип | WPMtek(Wei Pan Microelectronics) |
45V 200mW 1000@1mA,5V 100mA PNP SOT-23 Bipolar (BJT) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 100mA | 100nA | 45V | 300mV@100mA,10mA | 1000@1mA,5V | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | 200mW | true | - | 150MHz | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | ||
| S9015 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипS9014Anlielectronics Тип | Shandong Jingdao Microelectronics |
45V 200mW 100mA NPN SOT-23 Bipolar (BJT) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 100mA | 100nA | 45V | 300mV@100mA,5mA | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | 200mW | true | - | 150MHz | - | -55℃~+150℃@(Tj) | - | - | - | - | - | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | ||
| S9014 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBC846BAnlielectronics Тип | Shandong Jingdao Microelectronics |
65V 200mW 450@2mA,5V 100mA NPN SOT-23 Bipolar (BJT) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 100mA | - | 65V | 500mV@100mA,5mA | 450@2mA,5V | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | 200mW | true | - | 100MHz | - | -55℃~+150℃@(Tj) | - | - | - | - | - | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | ||
| BC846B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип3DD13007MDAnlielectronics Тип | Jilin Sino-Microelectronics |
400V 45W 8@1A,5V 8A NPN TO-220HF Bipolar (BJT) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 8A | 100uA | 400V | 2.5V@8A,2A | 8@1A,5V | - | - | - | - | Tube-packed | - | - | - | - | - | - | 45W | true | - | 4MHz | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | ||
| 3DD13007MD | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипS8050-HAnlielectronics Тип | Shandong Jingdao Microelectronics |
25V 300mW 350@50mA,1V 500mA NPN SOT-23 Bipolar (BJT) ROHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 500mA | - | 25V | 600mV@500mA,50mA | 350@50mA,1V | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | 300mW | true | - | 150MHz | - | -55℃~+150℃@(Tj) | - | - | - | - | - | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | ||
| S8050-H | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBC177Anlielectronics Тип | Micro Electronics Corporation |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | - | - | MICRO ELECTRONICS LTD | 1 | 175 °C | - | - | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | Contact Manufacturer | BCY | - | - | - | - | 150 MHz | - | - | - | EAR99 | - | BOTTOM | WIRE | unknown | 3 | O-MBCY-W3 | Not Qualified | SINGLE | AMPLIFIER | PNP | - | TO-18 | 0.6 W | 0.1 A | 70 | 45 V | - | - | - | ||
| BC177 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N4429Anlielectronics Тип | Microsemi Corporation |
RF Small Signal Bipolar Transistor, 0.425A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, M148, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 4 | SILICON | - | - | - | - | - | - | MICROSEMI CORP | 1 | 200 °C | - | - | CERAMIC, METAL-SEALED COFIRED | POST/STUD MOUNT, O-CRPM-F4 | ROUND | POST/STUD MOUNT | Obsolete | - | - | - | No | - | 700 MHz | - | e0 | No | EAR99 | TIN LEAD | RADIAL | FLAT | compliant | 4 | O-CRPM-F4 | Not Qualified | SINGLE | AMPLIFIER | NPN | - | - | 5 W | 0.425 A | 20 | 35 V | - | ULTRA HIGH FREQUENCY BAND | 3.5 pF | ||
| 2N4429 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMC1309Anlielectronics Тип | Microsemi Corporation |
Description: RF Small Signal Bipolar Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | MICROSEMI CORP | - | - | - | - | - | - | - | - | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MC1309 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDTC38CN00GRAnlielectronics Тип | Tianma Micro-electronics Co |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| DTC38CN00GR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBSY90Anlielectronics Тип | Micro Electronics Corporation |
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | - | - | MICRO ELECTRONICS LTD | 1 | 175 °C | - | - | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | Obsolete | - | - | - | - | - | 170 MHz | - | - | - | EAR99 | - | BOTTOM | WIRE | unknown | - | O-MBCY-W3 | Not Qualified | SINGLE | SWITCHING | NPN | - | TO-39 | 0.8 W | 0.5 A | 250 | 60 V | - | - | - | ||
| BSY90 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N3110Anlielectronics Тип | Micro Electronics Corporation |
Description: Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | - | - | MICRO ELECTRONICS LTD | 1 | 175 °C | - | - | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | Contact Manufacturer | TO-39 | - | - | - | - | 60 MHz | - | - | - | EAR99 | - | BOTTOM | WIRE | unknown | 3 | O-MBCY-W3 | Not Qualified | SINGLE | SWITCHING | NPN | - | TO-39 | 0.8 W | 1 A | 40 | 40 V | - | - | - | ||
| 2N3110 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBFX84Anlielectronics Тип | Micro Electronics Corporation |
Description: Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | - | - | MICRO ELECTRONICS LTD | 1 | 175 °C | - | - | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | Obsolete | TO-39 | - | - | - | - | 50 MHz | - | - | - | EAR99 | - | BOTTOM | WIRE | unknown | 3 | O-MBCY-W3 | Not Qualified | SINGLE | SWITCHING | NPN | - | TO-39 | 0.8 W | 1 A | 30 | 60 V | - | - | - | ||
| BFX84 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N3856Anlielectronics Тип | Micro Electronics Ltd |
Description: Small Signal Bipolar Transistor, 0.1A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92B, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | - | - | MICRO ELECTRONICS LTD | 1 | 150 °C | - | - | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-T3 | ROUND | CYLINDRICAL | Contact Manufacturer | - | - | - | - | - | 140 MHz | - | - | - | EAR99 | - | BOTTOM | THROUGH-HOLE | unknown | - | O-PBCY-T3 | Not Qualified | SINGLE | - | NPN | - | TO-92 | 0.62 W | 0.1 A | 100 | 18 V | - | - | - | ||
| 2N3856 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSG2001J/883BAnlielectronics Тип | Microsemi Corporation |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-16
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 16 | SILICON | - | - | - | - | - | - | MICROSEMI CORP | 7 | 125 °C | -55 °C | - | CERAMIC, METAL-SEALED COFIRED | IN-LINE, R-CDIP-T16 | RECTANGULAR | IN-LINE | Obsolete | - | - | - | No | - | - | - | e0 | No | EAR99 | TIN LEAD | DUAL | THROUGH-HOLE | not_compliant | - | R-CDIP-T16 | Not Qualified | 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | AMPLIFIER | NPN | - | - | - | 0.5 A | 1000 | 50 V | 1.6 V | - | - | ||
| SG2001J/883B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSG2004L/883BAnlielectronics Тип | Microsemi Corporation |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-20
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 20 | SILICON | - | - | - | - | - | - | MICROSEMI CORP | 7 | 125 °C | -55 °C | - | CERAMIC, METAL-SEALED COFIRED | CHIP CARRIER, S-CQCC-N20 | SQUARE | CHIP CARRIER | Obsolete | - | - | - | No | - | - | - | e0 | No | EAR99 | TIN LEAD | QUAD | NO LEAD | not_compliant | - | S-CQCC-N20 | Not Qualified | 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | AMPLIFIER | NPN | - | - | - | 0.5 A | 1000 | 50 V | 1.6 V | - | - | ||
| SG2004L/883B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SC1672Anlielectronics Тип | Micro Electronics Corporation |
Description: Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | - | - | MICRO ELECTRONICS LTD | 1 | 175 °C | - | - | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-W3 | ROUND | CYLINDRICAL | Contact Manufacturer | - | - | - | - | - | 100 MHz | - | - | - | EAR99 | - | BOTTOM | WIRE | unknown | - | O-PBCY-W3 | Not Qualified | SINGLE | SWITCHING | NPN | - | TO-92 | 120 W | 0.3 A | 70 | 80 V | - | - | - | ||
| 2SC1672 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSD1496Anlielectronics Тип | Microsemi Corporation |
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | - | - | - | - | - | - | MICROSEMI CORP | 1 | 200 °C | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PDFM-F3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | - | - | 860 MHz | - | e0 | - | EAR99 | TIN LEAD | DUAL | FLAT | unknown | - | R-PDFM-F3 | Not Qualified | SINGLE | AMPLIFIER | NPN | - | - | 190 W | 9 A | 20 | 26 V | - | ULTRA HIGH FREQUENCY BAND | - | ||
| SD1496 |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ