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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Weight Transistor Element Material Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage DC Collector/Base Gain hfe Min Emitter- Base Voltage VEBO Factory Pack QuantityFactory Pack Quantity hFEMin Maximum Operating Temperature Mounting Styles Number of Elements Operating Temperature (Max.) Pd - Power Dissipation RoHS Transistor Polarity Typical Input Resistor Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Polarity Configuration Number of Channels Element Configuration Power Dissipation Power - Max Transistor Application Polarity/Channel Type Transistor Type Collector Emitter Voltage (VCEO) Max Collector Current DC Current Gain (hFE) (Min) @ Ic, Vce Current - Collector Cutoff (Max) JEDEC-95 Code Vce Saturation (Max) @ Ib, Ic Max Frequency Transition Frequency Max Breakdown Voltage Frequency - Transition Emitter Base Voltage (VEBO) DC Current Gain-Min (hFE) Resistor - Base (R1) Continuous Collector Current Resistor - Emitter Base (R2) VCEsat-Max Height Length Width Radiation Hardening RoHS Status Lead Free
ON Semiconductor MMUN2212LT1
Mfr. Тип
MMUN2212LT1
Anlielectronics Тип

ON Semiconductor
TRANS PREBIAS NPN 246MW SOT23-3
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 - - Surface Mount Surface Mount TO-236-3, SC-59, SOT-23-3 - - - - - 50V - - - - 60 - - 1 - - - - - Tape & Reel (TR) 2007 - e0 - Obsolete 1 (Unlimited) 3 EAR99 Tin/Lead (Sn/Pb) 150°C -55°C BUILT-IN BIAS RESISTOR RATIO IS 1 - 50V 246mW DUAL GULL WING 240 not_compliant 100mA 30 MMUN22**L 3 R-PDSO-G3 Not Qualified NPN - - Single 246mW - SWITCHING - NPN - Pre-Biased 250mV 100mA 60 @ 5mA 10V 500nA TO-236AB 250mV @ 300μA, 10mA - - 50V - - - 22 k Ω 100mA 22 k Ω - - - - - Non-RoHS Compliant Contains Lead
    MMUN2212LT1
    MMUN2212LT1

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Panasonic Electronic Components DRC9143E0L
    Mfr. Тип
    DRC9143E0L
    Anlielectronics Тип

    		Panasonic Electronic Components
    Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES FLT LD 1.6x1.6mm
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 10 Weeks - Surface Mount Surface Mount SC-89, SOT-490 - 3 - SILICON - 50V 250mV - - - - - - 1 - - - - - Tape & Reel (TR) - - - - Discontinued 1 (Unlimited) 3 EAR99 - 150°C - BUILT IN BIAS RESISTOR RATIO IS 1 8541.21.00.95 - 125mW DUAL FLAT NOT SPECIFIED unknown - NOT SPECIFIED DRC9143 - - - NPN - - Single - - SWITCHING - NPN - Pre-Biased 50V 100mA 20 @ 5mA 10V 500nA - 250mV @ 500μA, 10mA - - 50V - - - 4.7 k Ω 100mA 4.7 k Ω - 600μm 1.6mm 850μm - RoHS Compliant -
      DRC9143E0L
      DRC9143E0L

      Panasonic Electronic Components
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Diodes Incorporated DDTA114GUA-7-F
      Mfr. Тип
      DDTA114GUA-7-F
      Anlielectronics Тип

      		Diodes Incorporated
      TRANS PREBIAS PNP 200MW SOT323
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 19 Weeks - Surface Mount Surface Mount SC-70, SOT-323 - 3 6.010099mg - - 50V - - - - 30 - - 1 - - - - - Tape & Reel (TR) 2007 - e3 yes Active 1 (Unlimited) 3 EAR99 Matte Tin (Sn) 150°C -55°C BUILT IN BIAS RESISTOR 8541.21.00.75 -50V 200mW DUAL GULL WING 260 - -100mA 40 DDTA114 3 - Not Qualified PNP - - Single - - - - PNP - Pre-Biased 50V 100mA 30 @ 5mA 5V 500nA ICBO - 300mV @ 500μA, 10mA - 250MHz 50V 250MHz - - - 100mA 10 k Ω - 1mm 2.2mm 1.35mm - ROHS3 Compliant Lead Free
        DDTA114GUA-7-F
        DDTA114GUA-7-F

        Diodes Incorporated
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Panasonic Electronic Components DRA5113Z0L
        Mfr. Тип
        DRA5113Z0L
        Anlielectronics Тип

        		Panasonic Electronic Components
        Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES FLT LD 2.0x2.1mm
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 10 Weeks - Surface Mount Surface Mount SC-85 - 85 - SILICON - 50V -250mV - - - - - - 1 - - - - - Tape & Reel (TR) 2009 - - - Discontinued 1 (Unlimited) 3 EAR99 - 150°C - BUILT IN BIAS RESISTOR RATIO IS 10 - - 150mW DUAL FLAT NOT SPECIFIED unknown - NOT SPECIFIED DRA5113 - R-PDSO-F3 - PNP - - Single - - SWITCHING - PNP - Pre-Biased -50V 100mA 30 @ 5mA 10V 500nA - 250mV @ 500μA, 10mA - - 50V - - - 1 k Ω -100mA 10 k Ω - 800μm 2mm 1.25mm - RoHS Compliant -
          DRA5113Z0L
          DRA5113Z0L

          Panasonic Electronic Components
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          ON Semiconductor MMUN2211LT1
          Mfr. Тип
          MMUN2211LT1
          Anlielectronics Тип

          		ON Semiconductor
          TRANS PREBIAS NPN 246MW SOT23-3
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 - - Surface Mount Surface Mount TO-236-3, SC-59, SOT-23-3 - 3 - - - 50V - - - - 35 - - 1 - - - - - Cut Tape (CT) 2007 - e0 - Obsolete 1 (Unlimited) 3 EAR99 Tin/Lead (Sn/Pb) 150°C -55°C BUILT-IN BIAS RESISTOR RATIO IS 1 - 50V 246mW DUAL GULL WING 240 not_compliant 100mA 30 MMUN22**L 3 - Not Qualified NPN - - Single 246mW - SWITCHING - NPN - Pre-Biased 50V 100mA 35 @ 5mA 10V 500nA - 250mV @ 300μA, 10mA - - - - - - 10 k Ω 100mA 10 k Ω - - - - - Non-RoHS Compliant Contains Lead
            MMUN2211LT1
            MMUN2211LT1

            ON Semiconductor
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor NSBA114TF3T5G
            Mfr. Тип
            NSBA114TF3T5G
            Anlielectronics Тип

            		ON Semiconductor
            TRANS PREBIAS PNP 254MW SOT1123
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 4 Weeks ACTIVE (Last Updated: 4 days ago) - Surface Mount SOT-1123 YES 3 - - - 50V - - - - 160 - - 1 - - - - - Tape & Reel (TR) 2010 - e3 yes Active 1 (Unlimited) 3 EAR99 Tin (Sn) 150°C -55°C BUILT IN BIAS RESISTOR - - 254mW DUAL FLAT - - - - NSBA1* 3 - - PNP - - Single - - SWITCHING - PNP - Pre-Biased 50V 100mA 160 @ 5mA 10V 500nA - 250mV @ 300μA, 10mA - - - - - - 10 k Ω - - - - - - No ROHS3 Compliant Lead Free
              NSBA114TF3T5G
              NSBA114TF3T5G

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor NSBC115TF3T5G
              Mfr. Тип
              NSBC115TF3T5G
              Anlielectronics Тип

              		ON Semiconductor
              NPN Bipolar Digital Transistor (BRT)
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 4 Weeks ACTIVE (Last Updated: 5 days ago) - Surface Mount SOT-1123 YES 3 - - - 50V - - - - 160 - - 1 - - - - - Tape & Reel (TR) 2010 - e3 yes Active 1 (Unlimited) 3 EAR99 Tin (Sn) 150°C -55°C BUILT IN BIAS RESISTOR - - 254mW DUAL FLAT - - - - NSBC1* 3 - - NPN - - Single - - SWITCHING - NPN - Pre-Biased 50V 100mA 160 @ 5mA 10V 500nA - 250mV @ 5mA, 10mA - - - - - - 100 k Ω - - - - - - No ROHS3 Compliant Lead Free
                NSBC115TF3T5G
                NSBC115TF3T5G

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Toshiba RN1112MFV(TL3,T)
                Mfr. Тип
                RN1112MFV(TL3,T)
                Anlielectronics Тип

                		Toshiba
                Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 22kohm
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 - - Surface Mount - - - 3 - - - - - - - 8000 - - - - - - Details - - Cut Tape - RN1112MFV - - - - - - - 150 °C -55 °C - - - - - - - - - - - - - - - - - Single - - - - - 50 V - - - - - - - - - - - - - - - - - - No - -
                  RN1112MFV(TL3,T)
                  RN1112MFV(TL3,T)

                  Toshiba
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Toshiba RN1116MFV(TL3,T)
                  Mfr. Тип
                  RN1116MFV(TL3,T)
                  Anlielectronics Тип

                  		Toshiba
                  Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 4.7kohm
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - Surface Mount - - - 3 - - - - - - - 8000 - - - - - - Details - - Cut Tape - RN1116MFV - - - - - - - 150 °C -55 °C - - - - - - - - - - - - - - - - - Single - - - - - 50 V - - - - - - - - - - - - - - - - - - No - -
                    RN1116MFV(TL3,T)
                    RN1116MFV(TL3,T)

                    Toshiba
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Toshiba RN1115MFV(TL3,T)
                    Mfr. Тип
                    RN1115MFV(TL3,T)
                    Anlielectronics Тип

                    		Toshiba
                    Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 2.2kohm
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - - Surface Mount - - - 3 - - - - - - - 8000 - - - - - - Details - - Cut Tape - RN1115MFV - - - - - - - 150 °C -55 °C - - - - - - - - - - - - - - - - - Single - - - - - 50 V - - - - - - - - - - - - - - - - - - No - -
                      RN1115MFV(TL3,T)
                      RN1115MFV(TL3,T)

                      Toshiba
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Toshiba RN2131MFV(TL3,T)
                      Mfr. Тип
                      RN2131MFV(TL3,T)
                      Anlielectronics Тип

                      		Toshiba
                      Bipolar Transistors - Pre-Biased Bias Resistor PNP 100kohm -100mA -50V
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 - - Surface Mount - - - 3 - - - - - - - 8000 - - - - - - Details - - Cut Tape - RN2131 - - - - - - - 150 °C -55 °C - - - - - - - - - - - - - - - - - Single - - - - - 50 V - - - - - - - - - - - - - - - - - - No - -
                        RN2131MFV(TL3,T)
                        RN2131MFV(TL3,T)

                        Toshiba
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Toshiba RN2113MFV(TL3,T)
                        Mfr. Тип
                        RN2113MFV(TL3,T)
                        Anlielectronics Тип

                        		Toshiba
                        Bipolar Transistors - Pre-Biased Bias Resistor PNP 47kohm -100mA -50V
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - - Surface Mount - - - 3 - - - - - - - 8000 - - - - - - Details - - Cut Tape - RN2113 - - - - - - - 150 °C -55 °C - - - - - - - - - - - - - - - - - Single - - - - - 50 V - - - - - - - - - - - - - - - - - - No - -
                          RN2113MFV(TL3,T)
                          RN2113MFV(TL3,T)

                          Toshiba
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Toshiba RN1119MFV,L37F
                          Mfr. Тип
                          RN1119MFV,L37F
                          Anlielectronics Тип

                          		Toshiba
                          Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 - - - - SOT-723-3 - - - - 50 V - - 120 5 V 8000 - + 150 C SMD/SMT - - 150 mW Details NPN 1 kOhms MouseReel - RN1119MFV - - - - - - - - - - - - - - - - - - - - - - - - Single 1 Channel - - - - - - - - - - - - - - - - - - - 100 mA - - - - - - - -
                            RN1119MFV,L37F
                            RN1119MFV,L37F

                            Toshiba
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Toshiba RN2116MFV(TL3,T)
                            Mfr. Тип
                            RN2116MFV(TL3,T)
                            Anlielectronics Тип

                            		Toshiba
                            Bipolar Transistors - Pre-Biased Bias Resistor PNP 4.7kohm -100mA -50V
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 - - Surface Mount - - - 3 - - - - - - - 8000 - - - - - - Details - - Cut Tape - RN2116 - - - - - - - 150 °C -55 °C - - - - - - - - - - - - - - - - - Single - - - - - 50 V - - - - - - - - - - - - - - - - - - No - -
                              RN2116MFV(TL3,T)
                              RN2116MFV(TL3,T)

                              Toshiba
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Toshiba RN1113MFV,L37F
                              Mfr. Тип
                              RN1113MFV,L37F
                              Anlielectronics Тип

                              		Toshiba
                              Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - - - - SOT-723-3 - - - - 50 V - - 120 5 V 8000 - + 150 C SMD/SMT - - 150 mW Details NPN 47 kOhms MouseReel - RN1113MFV - - - - - - - - - - - - - - - - - - - - - - - - Single 1 Channel - - - - - - - - - - - - - - - - - - - 100 mA - - - - - - - -
                                RN1113MFV,L37F
                                RN1113MFV,L37F

                                Toshiba
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ROHM Semiconductor DTC923TUBTL
                                Mfr. Тип
                                DTC923TUBTL
                                Anlielectronics Тип

                                		ROHM Semiconductor
                                TRANS PREBIAS NPN 20V 0.2W UMT3F
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 7 Weeks - Surface Mount - SC - 85 - SILICON - 20V - - - - - - - 1 - - - - - Tape & Reel (TR) 2013 - - - Active 1 (Unlimited) 3 EAR99 - 150°C - - - - 200mW DUAL FLAT NOT SPECIFIED - - NOT SPECIFIED - - R-PDSO-F3 - NPN - - Single - - SWITCHING - - 100mV 400mA - - - - 35MHz 35MHz 20V - 40V 820 - 400mA - - - - - - ROHS3 Compliant Lead Free
                                  DTC923TUBTL
                                  DTC923TUBTL

                                  ROHM Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ROHM Semiconductor DTA123ECAT116
                                  Mfr. Тип
                                  DTA123ECAT116
                                  Anlielectronics Тип

                                  		ROHM Semiconductor
                                  PNP -100MA -50V DIGITAL TRANSIST
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 13 Weeks - Surface Mount Surface Mount TO-236-3, SC-59, SOT-23-3 - - - SILICON - 50V - - - - - - - 1 150°C - - - - Tape & Reel (TR) 2016 - - - Active 1 (Unlimited) 3 EAR99 - - - DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 8541.21.00.75 - 200mW DUAL GULL WING NOT SPECIFIED not_compliant - NOT SPECIFIED - 3 R-PDSO-G3 Not Qualified - SINGLE WITH BUILT-IN RESISTOR - - - 200mW SWITCHING PNP PNP - Pre-Biased 300mV 100mA 20 @ 20mA 5V 500nA - 300mV @ 500μA, 10mA - 250MHz 50V 250MHz - - 2.2 k Ω - 2.2 k Ω 0.3 V - - - - ROHS3 Compliant -
                                    DTA123ECAT116
                                    DTA123ECAT116

                                    ROHM Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ON Semiconductor NSBA114YF3T5G
                                    Mfr. Тип
                                    NSBA114YF3T5G
                                    Anlielectronics Тип

                                    		ON Semiconductor
                                    TRANS PREBIAS PNP 254MW SOT1123
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 4 Weeks ACTIVE (Last Updated: 1 week ago) - Surface Mount SOT-1123 YES 3 - - - 50V - - - - 80 - - 1 - - - - - Tape & Reel (TR) 2010 - e3 yes Active 1 (Unlimited) 3 EAR99 Tin (Sn) 150°C -55°C BUILT IN BIAS RESISTANCE RATIO IS 4.7 - - 254mW DUAL FLAT 260 - - - NSBA1* 3 - - PNP - - Single - - SWITCHING - PNP - Pre-Biased 50V 100mA 80 @ 5mA 10V 500nA - 250mV @ 300μA, 10mA - - - - - - 10 k Ω - 47 k Ω - - - - No ROHS3 Compliant Lead Free
                                      NSBA114YF3T5G
                                      NSBA114YF3T5G

                                      ON Semiconductor
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor NSVMUN2112T1G
                                      Mfr. Тип
                                      NSVMUN2112T1G
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      Bipolar Transistors - Pre-Biased SS SC59 BR XSTR PNP PBFR
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 2 Weeks ACTIVE (Last Updated: 3 days ago) Surface Mount Surface Mount TO-236-3, SC-59, SOT-23-3 - - - SILICON - 50V - - - - - - - 1 - - - - - Tape & Reel (TR) 2013 - e3 yes Active 1 (Unlimited) - EAR99 Tin (Sn) - - - - - 230mW - - - - - - - - - - - - - - - 230mW - PNP PNP - Pre-Biased 250mV 100mA 60 @ 5mA 10V 500nA - 250mV @ 300μA, 10mA - - - - - - 22 k Ω - 22 k Ω - - - - - ROHS3 Compliant Lead Free
                                        NSVMUN2112T1G
                                        NSVMUN2112T1G

                                        ON Semiconductor
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Diodes Incorporated DDTC144GCA-7-F
                                        Mfr. Тип
                                        DDTC144GCA-7-F
                                        Anlielectronics Тип

                                        		Diodes Incorporated
                                        TRANS PREBIAS NPN 200MW SOT23-3
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 12 Weeks - Surface Mount Surface Mount TO-236-3, SC-59, SOT-23-3 - 3 7.994566mg - - 50V - - - - 68 - - 1 - - - - - Tape & Reel (TR) 2008 - e3 yes Active 1 (Unlimited) 3 EAR99 Matte Tin (Sn) 150°C -55°C BUILT-IN BIAS RESISTOR 8541.21.00.75 50V 200mW DUAL GULL WING 260 - 100mA 40 - 3 - Not Qualified NPN - - Single - - - - NPN - Pre-Biased 50V 100mA 68 @ 5mA 5V 500nA ICBO - 300mV @ 500μA, 10mA - 250MHz 50V 250MHz - - - 100mA 47 k Ω - 1mm 3.05mm 1.4mm - ROHS3 Compliant Lead Free
                                          DDTC144GCA-7-F
                                          DDTC144GCA-7-F

                                          Diodes Incorporated
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - Bipolar (BJT) - Single, Pre-Biased definition: A Bipolar Junction Transistor(BJT) is a type of transistor that uses both electrons and holes as charge carriers. It allows a small current ... Transistors - Bipolar (BJT) - Single, Pre-Biased Product Listing: MMUN2212LT1,DRC9143E0L,DDTA114GUA-7-F,DRA5113Z0L,MMUN2211LT1.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - Bipolar (BJT) - Single, Pre-Biased has 4910 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.