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Классификация Марка Марка О Anli Запрос цены
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Base Product Number Brand Current - Continuous Drain (Id) @ 25℃ Factory Pack QuantityFactory Pack Quantity Manufacturer Mfr Number of Elements Package Product Status RoHS Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Additional Feature HTS Code Capacitance Subcategory Voltage - Rated DC Max Power Dissipation Technology Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Input Voltage-Nom Configuration Number of Channels Analog IC - Other Type Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Output Current-Max Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Control Technique Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Product Type Switcher Configuration Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Max Dual Supply Voltage Switching Frequency-Max Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage DS Breakdown Voltage-Min Channel Type Avalanche Energy Rating (Eas) FET Technology FET Feature Drain to Source Resistance Nominal Vgs Feedback Cap-Max (Crss) Product Category Height Height Seated (Max) Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor FDC6320C
Mfr. Тип
FDC6320C
Anlielectronics Тип

ON Semiconductor
MOSFET N/P-CH 25V SSOT6
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 10 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 - 36mg SILICON - - 220mA 120mA - - - 2 - - - 7.4 ns -55°C~150°C TJ Tape & Reel (TR) 1997 - e3 yes Active 1 (Unlimited) 6 SMD/SMT EAR99 4Ohm Tin (Sn) LOGIC LEVEL COMPATIBLE - - - - 700mW - - GULL WING - - - - 220mA - - - - - - - - - - Dual ENHANCEMENT MODE 900mW - - - N and P-Channel - SWITCHING 4 Ω @ 400mA, 4.5V 1.5V @ 250μA - - 9.5pF @ 10V 0.4nC @ 4.5V 6ns - N-CHANNEL AND P-CHANNEL 6 ns - - 220mA 850mV 8V - - - - 25V - 25V - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - 850 mV - - - - - - - No No SVHC ROHS3 Compliant Lead Free
    FDC6320C
    FDC6320C

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Diodes Incorporated ZXMC3A16DN8TA
    Mfr. Тип
    ZXMC3A16DN8TA
    Anlielectronics Тип

    		Diodes Incorporated
    MOSFET N/P-CH 30V 8SOIC
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - - 4.9A 4.1A - - - 2 - - - 21.6 ns -55°C~150°C TJ Tape & Reel (TR) - - e3 yes Active 1 (Unlimited) 8 - EAR99 48mOhm Matte Tin (Sn) LOW THRESHOLD - - - 30V 2.1W - DUAL GULL WING 260 - - - 6.4A 40 - 8 - - - - - 2 - - ENHANCEMENT MODE 2.1W - 3 ns 1.25W N and P-Channel - SWITCHING 35m Ω @ 9A, 10V 1V @ 250μA (Min) - - 796pF @ 25V 17.5nC @ 10V 6.4ns - N-CHANNEL AND P-CHANNEL 9.4 ns - - 6.4A 1V 20V - - 4.9A - 30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 1.5mm - 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
      ZXMC3A16DN8TA
      ZXMC3A16DN8TA

      Diodes Incorporated
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Alpha & Omega Semiconductor Inc. AO6802
      Mfr. Тип
      AO6802
      Anlielectronics Тип

      		Alpha & Omega Semiconductor Inc.
      Transistor: N-MOSFET x2; unipolar; 30V; 3A; 730mW; TSOP6
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 18 Weeks - - Surface Mount Surface Mount SC-74, SOT-457 - 6 - - - - - - - - - 2 - - - - -55°C~150°C TJ Tape & Reel (TR) 2009 - - - Active 1 (Unlimited) - - - - - - - - - - 1.15W - - - - - - - - - - - - - - - - - - - ENHANCEMENT MODE 1.15W - - - 2 N-Channel (Dual) - - 50m Ω @ 3.5A, 10V 2.5V @ 250μA - - 210pF @ 15V 5nC @ 10V - 30V - - - - 3.5A - 20V - - - - - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - - - - ROHS3 Compliant -
        AO6802
        AO6802

        Alpha & Omega Semiconductor Inc.
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Diodes Incorporated ZXMP3A16DN8TA
        Mfr. Тип
        ZXMP3A16DN8TA
        Anlielectronics Тип

        		Diodes Incorporated
        MOSFET 2P-CH 30V 4.2A 8-SOIC
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - - 4.2A - - - 2 - - - 37.1 ns -55°C~150°C TJ Tape & Reel (TR) 2007 - e3 yes Active 1 (Unlimited) 8 - EAR99 45mOhm Matte Tin (Sn) LOW THRESHOLD - - - -30V 2.1W - - GULL WING 260 - - - -5.5A 40 - 8 - - - - - 2 - - ENHANCEMENT MODE 2.1W - 3.8 ns 1.8W 2 P-Channel (Dual) - SWITCHING 45m Ω @ 4.2A, 10V 1V @ 250μA (Min) - - 1022pF @ 15V 29.6nC @ 10V 6.5ns 30V - 21.4 ns - - 5.5A - 20V - - - - -30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 1.5mm - 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
          ZXMP3A16DN8TA
          ZXMP3A16DN8TA

          Diodes Incorporated
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Nexperia USA Inc. BSS138BKS,115
          Mfr. Тип
          BSS138BKS,115
          Anlielectronics Тип

          		Nexperia USA Inc.
          MOSFET 2N-CH 60V 0.32A 6TSSOP
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 4 Weeks - - - Surface Mount 6-TSSOP, SC-88, SOT-363 YES - - - SILICON - - 320mA - - - 2 - - - - -55°C~150°C TJ Tape & Reel (TR) 2002 Automotive, AEC-Q101, TrenchMOS™ e3 - Active 1 (Unlimited) 6 - - - Tin (Sn) LOGIC LEVEL COMPATIBLE - - - - - - - GULL WING - - - - - - - 6 - R-PDSO-G6 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - 445mW 2 N-Channel (Dual) - SWITCHING 1.6 Ω @ 320mA, 10V 1.6V @ 250μA - - 56pF @ 10V 0.7nC @ 4.5V - 60V - - - - - - - - - 0.32A - - - - 60V - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - - - - ROHS3 Compliant -
            BSS138BKS,115
            BSS138BKS,115

            Nexperia USA Inc.
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor NTMD4840NR2G
            Mfr. Тип
            NTMD4840NR2G
            Anlielectronics Тип

            		ON Semiconductor
            MOSFET NFET SO8 30V 7.5A 0.034R
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 31 Weeks ACTIVE (Last Updated: 3 days ago) - - Surface Mount 8-SOIC (0.154, 3.90mm Width) YES 8 - - SILICON - - 4.5A - - - 2 - - - 17 ns -55°C~150°C TJ Tape & Reel (TR) 2007 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Tin (Sn) - - - - - 800mW - - GULL WING - - - - - - NTMD4840N 8 - - - - - - - Dual ENHANCEMENT MODE 1.95W - 7.6 ns 680mW 2 N-Channel (Dual) - SWITCHING 24m Ω @ 6.9A, 10V 3V @ 250μA - - 520pF @ 15V 9.5nC @ 10V 5ns - - 3 ns - - 5.5A - 20V - - 4.5A - 30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 1.5mm - 5mm 4mm - No - ROHS3 Compliant Lead Free
              NTMD4840NR2G
              NTMD4840NR2G

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Diodes Incorporated DMN2005DLP4K-7
              Mfr. Тип
              DMN2005DLP4K-7
              Anlielectronics Тип

              		Diodes Incorporated
              MOSFET 2N-CH 20V 0.3A 6-DFN
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 15 Weeks - - Surface Mount Surface Mount 6-XFDFN Exposed Pad - 6 - - SILICON - - - - - - 2 - - - - -65°C~150°C TJ Tape & Reel (TR) 2012 - e4 yes Active 1 (Unlimited) 6 - EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) - - - - - 400mW - BOTTOM - 260 - - - - 40 DMN2005DLP4K 6 - - - - - - - Dual ENHANCEMENT MODE 400mW - - - 2 N-Channel (Dual) - SWITCHING 1.5 Ω @ 10mA, 4V 900mV @ 100μA - - - - - 20V - - - - 300mA - 10V - - - 3.5Ohm 20V - - - - - METAL-OXIDE SEMICONDUCTOR Standard - - - - 350μm - 1.3mm 1mm - No No SVHC ROHS3 Compliant Lead Free
                DMN2005DLP4K-7
                DMN2005DLP4K-7

                Diodes Incorporated
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Texas Instruments CSD87333Q3D
                Mfr. Тип
                CSD87333Q3D
                Anlielectronics Тип

                		Texas Instruments
                MOSFET 2N-CH 30V 15A 8SON
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 12 Weeks ACTIVE (Last Updated: 5 days ago) Gold Surface Mount Surface Mount 8-PowerTDFN - 8 - - - - - - - - - - - - - - 125°C TJ Tape & Reel (TR) - NexFET™ e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - - - - 6W - - NO LEAD 260 1 0.65mm not_compliant - NOT SPECIFIED CSD87333 - - - - 12V - 2 SWITCHING CONTROLLER - - - - - - 2 N-Channel (Dual) Asymmetrical 40A - 14.3m Ω @ 4A, 8V 1.2V @ 250μA - PWM 662pF @ 15V 4.6nC @ 4.5V 3.9ns 30V - 2.2 ns - BUCK-BOOST 15A 950mV 10V - 1500kHz - - - - - - - - - Logic Level Gate, 5V Drive - - - - - 1.05mm 3.3mm 3.3mm 900μm - No SVHC ROHS3 Compliant Contains Lead
                  CSD87333Q3D
                  CSD87333Q3D

                  Texas Instruments
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Diodes Incorporated DMG1016UDWQ-7
                  Mfr. Тип
                  DMG1016UDWQ-7
                  Anlielectronics Тип

                  		Diodes Incorporated
                  MOSFET BVDSS: 8V~24V SOT363 T&R
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 - - - - Surface Mount 6-TSSOP, SC-88, SOT-363 - - SOT-363 - - DMG1016 Diodes Incorporated 1.066A (Ta), 845mA (Ta) 3000 Diodes Incorporated Diodes Incorporated - Tape & Reel (TR) Active Details - -55°C ~ 150°C (TJ) MouseReel - Automotive, AEC-Q101 - - - - - - - - - - - - MOSFETs - - Si - - - - - - - - - - - - - - - - - - - - - - 330mW (Ta) N and P-Channel Complementary - - 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V 1V @ 250μA - - 60.67pF @ 10V, 59.76pF @ 16V 736.6nC @ 4.5V, 0.62nC @ 4.5V - 20V - - MOSFET - - - - - - - - - - - - Dual N/P - - Standard - - - MOSFET - - - - - - - - -
                    DMG1016UDWQ-7
                    DMG1016UDWQ-7

                    Diodes Incorporated
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Diodes Incorporated DMN2023UCB4-7
                    Mfr. Тип
                    DMN2023UCB4-7
                    Anlielectronics Тип

                    		Diodes Incorporated
                    MOSFET 2N-CH X1-WLB1818-4
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 8 Weeks - - Surface Mount Surface Mount 4-XFBGA, WLBGA - 4 - - - - - 6A Ta - - - - - - - 75 ns -55°C~150°C TJ Tape & Reel (TR) 2015 Automotive, AEC-Q101 - - Active 1 (Unlimited) - - EAR99 - - - - 2.564nF - - 1.45W - - - NOT SPECIFIED - - - - NOT SPECIFIED - - - - - - - 1 - - - - - 10 ns - 2 N-Channel (Dual) Common Drain - - - 1.3V @ 1mA - - 3333pF @ 10V 37nC @ 4.5V 20ns 24V - 29 ns - - 6A - 12V - - - - - - - - - - - Standard 27mOhm - - - - - - - - - - ROHS3 Compliant -
                      DMN2023UCB4-7
                      DMN2023UCB4-7

                      Diodes Incorporated
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Alpha & Omega Semiconductor Inc. AO4822A
                      Mfr. Тип
                      AO4822A
                      Anlielectronics Тип

                      		Alpha & Omega Semiconductor Inc.
                      MOSFET 2N-CH 30V 8A 8SOIC
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 18 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - - - - - - - - 2 - - - - -55°C~150°C TJ Tape & Reel (TR) 2010 - - - Active 1 (Unlimited) - - - - - - - - - - 2W - - - - - - - - - - - - - - - - - - - ENHANCEMENT MODE 2W - - - 2 N-Channel (Dual) - - 19m Ω @ 8A, 10V 2.4V @ 250μA - - 888pF @ 15V 18nC @ 10V - 30V - - - - 8A - 20V - - 8A - - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - - No - ROHS3 Compliant Lead Free
                        AO4822A
                        AO4822A

                        Alpha & Omega Semiconductor Inc.
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor MCH6661-TL-W
                        Mfr. Тип
                        MCH6661-TL-W
                        Anlielectronics Тип

                        		ON Semiconductor
                        ON SEMICONDUCTOR MCH6661-TL-WDual MOSFET, Dual N Channel, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 7 Weeks ACTIVE (Last Updated: 1 day ago) - Surface Mount Surface Mount 6-SMD, Flat Leads - 6 - 7.512624mg - - - - - - - 2 - - - 10.5 ns 150°C TJ Tape & Reel (TR) 2014 - e6 yes Active 1 (Unlimited) - - EAR99 - Tin/Bismuth (Sn/Bi) - - - - - 800mW - - - NOT SPECIFIED - - - - NOT SPECIFIED - - - - - - - - - Dual - 800mW - 3.4 ns - 2 N-Channel (Dual) - - 188m Ω @ 900mA, 10V 2.6V @ 1mA - - 88pF @ 10V 2nC @ 10V 3.6ns 30V - 4 ns - - 1.8A 2.6V 20V - - - - 30V - - - - - - Logic Level Gate, 4V Drive - - - - 850μm - 2mm 1.6mm - - No SVHC ROHS3 Compliant Lead Free
                          MCH6661-TL-W
                          MCH6661-TL-W

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor FDS89161
                          Mfr. Тип
                          FDS89161
                          Anlielectronics Тип

                          		ON Semiconductor
                          MOSFET 2N-CH 100V 2.7A 8-SOIC
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 11 Weeks ACTIVE (Last Updated: 6 days ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 187mg SILICON - - - - - - 2 - - - 7.3 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e3 yes Active 1 (Unlimited) 8 - EAR99 - Tin (Sn) - - - - - 31W - - GULL WING - - - - - - - - - - - - - - - Dual ENHANCEMENT MODE 3.1W - 4.2 ns 1.6W 2 N-Channel (Dual) - SWITCHING 105m Ω @ 2.7A, 10V 4V @ 250μA - - 210pF @ 50V 4.1nC @ 10V 1.3ns 100V - 1.9 ns - - 2.7A 3V 20V - - - 0.105Ohm 100V - - - - - METAL-OXIDE SEMICONDUCTOR Standard - - 5 pF - 1.5mm - 4mm 5mm - No No SVHC ROHS3 Compliant Lead Free
                            FDS89161
                            FDS89161

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Diodes Incorporated ZXMD63N03XTA
                            Mfr. Тип
                            ZXMD63N03XTA
                            Anlielectronics Тип

                            		Diodes Incorporated
                            MOSFET Dual 30V N Chl HDMOS
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 17 Weeks - - Surface Mount Surface Mount 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) - 8 - 139.989945mg SILICON - - - - - - 2 - - - 9.6 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Active 1 (Unlimited) 8 - EAR99 135mOhm Matte Tin (Sn) LOW THRESHOLD - - - 30V 1.04W - - GULL WING 260 - - - 2.4A 40 - 8 - - - - - - - - ENHANCEMENT MODE 1.25W - 2.5 ns - 2 N-Channel (Dual) - SWITCHING 135m Ω @ 1.7A, 10V 1V @ 250μA (Min) - - 290pF @ 25V 8nC @ 10V 4.1ns - - 4.1 ns - - 2.3A - 20V - - - - 30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 950μm - 3.1mm 3.1mm - No No SVHC ROHS3 Compliant Lead Free
                              ZXMD63N03XTA
                              ZXMD63N03XTA

                              Diodes Incorporated
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Diodes Incorporated DMG1016V-7
                              Mfr. Тип
                              DMG1016V-7
                              Anlielectronics Тип

                              		Diodes Incorporated
                              MOSFET MOSFET N-CHANNEL P-CHANNEL SOT-563
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 15 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 - 3.005049mg SILICON - - 870mA 640mA - - - 2 - - - 28.4 ns -55°C~150°C TJ Cut Tape (CT) 2009 - e3 yes Active 1 (Unlimited) 6 - EAR99 700mOhm Matte Tin (Sn) HIGH RELIABILITY - - - - 530mW - DUAL FLAT - - - - - - DMG1016V 6 AEC-Q101 - - - - - - - ENHANCEMENT MODE 530mW - 5.1 ns - N and P-Channel - SWITCHING 400m Ω @ 600mA, 4.5V 1V @ 250μA - - 60.67pF @ 16V 0.74nC @ 4.5V 8.1ns 20V N-CHANNEL AND P-CHANNEL 20.7 ns - - 640mA 1V 6V - - 0.87A - - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 600μm - 1.7mm 1.25mm - No No SVHC ROHS3 Compliant Lead Free
                                DMG1016V-7
                                DMG1016V-7

                                Diodes Incorporated
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Diodes Incorporated ZXMP6A16DN8TA
                                Mfr. Тип
                                ZXMP6A16DN8TA
                                Anlielectronics Тип

                                		Diodes Incorporated
                                MOSFET 2P-CH 60V 2.9A 8-SOIC
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 14 Weeks - Tin Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - - 3.9A Ta - - - 2 - - - 35 ns -55°C~150°C TJ Tape & Reel (TR) 2011 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) 8 - EAR99 85mOhm - - - - - -60V 2.15W - - GULL WING 260 - - - -3.7A 40 - 8 - - - - - - - - ENHANCEMENT MODE 2.15W - 3.5 ns - 2 P-Channel (Dual) - SWITCHING 85m Ω @ 2.9A, 10V 1V @ 250μA - - 1021pF @ 30V 12.1nC @ 5V 4.1ns 60V - 10 ns - - 3.9A - 20V - - - - - - - - - - METAL-OXIDE SEMICONDUCTOR Standard - - - - 1.5mm - 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                                  ZXMP6A16DN8TA
                                  ZXMP6A16DN8TA

                                  Diodes Incorporated
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Diodes Incorporated DMC3025LSD-13
                                  Mfr. Тип
                                  DMC3025LSD-13
                                  Anlielectronics Тип

                                  		Diodes Incorporated
                                  MOSFET N/P-CH 30V 6.5A/4.2A 8SO
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - - 6.5A 4.2A - - - 2 - - - 28.4 ns -55°C~150°C TJ Cut Tape (CT) 2012 - e3 - Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) HIGH RELIABILITY - - - - 1.2W - DUAL GULL WING 260 - - - - 30 DMC3025 - AEC-Q101 - - - - 2 - - ENHANCEMENT MODE - - 6.8 ns - N and P-Channel - SWITCHING 20m Ω @ 7.4A, 10V 2V @ 250μA - - 501pF @ 15V 9.8nC @ 10V 4.9ns 30V N-CHANNEL AND P-CHANNEL 12.4 ns - - 4.2A - 20V - - 5.3A - -30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - 1.5mm - 4.95mm 3.95mm - - No SVHC ROHS3 Compliant Lead Free
                                    DMC3025LSD-13
                                    DMC3025LSD-13

                                    Diodes Incorporated
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Infineon Technologies BSO303PHXUMA1
                                    Mfr. Тип
                                    BSO303PHXUMA1
                                    Anlielectronics Тип

                                    		Infineon Technologies
                                    Trans MOSFET P-CH 30V 7A 8-Pin DSO Dry
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 - - Tin Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - - - - SILICON - - - - - - 2 - - - - -55°C~150°C TJ Tape & Reel (TR) 2011 OptiMOS™ e3 yes Obsolete 3 (168 Hours) 8 - EAR99 - - LOGIC LEVEL COMPATIBLE 8541.29.00.95 - - - - - - GULL WING NOT SPECIFIED - - - - NOT SPECIFIED - 8 - R-PDSO-G8 Not Qualified - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - 2W 2 P-Channel (Dual) - - 21m Ω @ 8.2A, 10V 2V @ 100μA Halogen Free - 2678pF @ 25V 49nC @ 10V 13ns 30V - - - - 7A - 20V -30V - 7A 0.021Ohm - 32.8A - - - 97 mJ METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - - - - ROHS3 Compliant Lead Free
                                      BSO303PHXUMA1
                                      BSO303PHXUMA1

                                      Infineon Technologies
                                      RoHS :
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                                      ON Semiconductor NVMFD5C470NLT1G
                                      Mfr. Тип
                                      NVMFD5C470NLT1G
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      MOSFET 2N-CH 40V 36A S08FL
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 48 Weeks ACTIVE (Last Updated: 3 days ago) - - Surface Mount 8-PowerTDFN YES - - - SILICON - - 11A Ta 36A Tc - - - 2 - - - - -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) 6 - - - Tin (Sn) - - - - - - - - FLAT 260 - - not_compliant - 30 - - - R-PDSO-F6 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - DRAIN - 3W Ta 24W Tc 2 N-Channel (Dual) - - 11.5m Ω @ 5A, 10V 2.2V @ 20μA - - 590pF @ 25V 4nC @ 4.5V - 40V - - - - - - - - - - 0.0178Ohm - 110A - 40V - 49 mJ METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - - - - - ROHS3 Compliant -
                                        NVMFD5C470NLT1G
                                        NVMFD5C470NLT1G

                                        ON Semiconductor
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                                        Diodes Incorporated DMN3024LSD-13
                                        Mfr. Тип
                                        DMN3024LSD-13
                                        Anlielectronics Тип

                                        		Diodes Incorporated
                                        MOSFET 2N-CH 30V 6.8A 8SO
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - - 6.8A - - - 2 - - - 16 ns -55°C~150°C TJ Digi-Reel® 2009 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - - - - 1.8W - - GULL WING 260 - - - - 40 DMN3024LSD 8 - - - - - - - - ENHANCEMENT MODE 2W - 2.9 ns - 2 N-Channel (Dual) - SWITCHING 24m Ω @ 7A, 10V 3V @ 250μA - - 608pF @ 15V 12.9nC @ 10V 3.3ns - - 8 ns - - 7.2A - 20V - - 5.7A - 30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - - No No SVHC ROHS3 Compliant -
                                          DMN3024LSD-13
                                          DMN3024LSD-13

                                          Diodes Incorporated
                                          RoHS :
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                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: FDC6320C,ZXMC3A16DN8TA,AO6802,ZXMP3A16DN8TA,BSS138BKS,115.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.