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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Weight | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Additional Feature | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Voltage | Element Configuration | Current | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | FET Feature | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипDMC2004DWK-7Anlielectronics Тип | Diodes Incorporated |
MOSFET N/P-CH 20V SOT-363
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 19 Weeks | - | - | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | 6 | 6.010099mg | SILICON | 540mA 430mA | 2 | - | -65°C~150°C TJ | Tape & Reel (TR) | 2017 | - | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | 900μOhm | Matte Tin (Sn) | ESD PROTECTED | - | 250mW | DUAL | GULL WING | 260 | - | - | 40 | DMC2004DWK | 6 | - | - | - | - | - | - | - | - | ENHANCEMENT MODE | 250mW | - | - | - | N and P-Channel | SWITCHING | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | - | 150pF @ 16V | - | - | - | N-CHANNEL AND P-CHANNEL | - | 540mA | - | 8V | - | 0.54A | - | 20V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | 1mm | 2.2mm | 1.35mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMC2004DWK-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипEFC2J013NUZTDGAnlielectronics Тип | ON Semiconductor |
MOSFET N-CH 12V 17A WLCSP6 DUAL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | ACTIVE (Last Updated: 1 day ago) | - | - | Surface Mount | 6-SMD, No Lead | - | - | - | - | - | - | - | 150°C TJ | Tape & Reel (TR) | 2017 | - | - | yes | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.8W Ta | 2 N-Channel (Dual) Common Drain | - | - | 1.3V @ 1mA | - | - | 37nC @ 4.5V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| EFC2J013NUZTDG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMP2065UFDB-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2 P-CH 20V 4.5A DFN2020-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | - | - | - | Surface Mount | 6-UDFN Exposed Pad | - | - | - | - | 4.5A Ta | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | - | e4 | - | Active | 1 (Unlimited) | - | - | EAR99 | - | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | - | - | - | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.54W | 2 P-Channel (Dual) | - | 50m Ω @ 2A, 4.5V | 1V @ 250μA | - | 752pF @ 15V | 9.1nC @ 4.5V | - | 20V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMP2065UFDB-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2N7002VAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 60V 0.28A SOT-563F
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | Surface Mount | Surface Mount | SOT-563, SOT-666 | - | 6 | 32mg | SILICON | - | 2 | 12.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | - | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | 7.5Ohm | - | - | - | 250mW | - | FLAT | - | - | - | - | - | - | - | - | - | - | - | - | Dual | - | ENHANCEMENT MODE | 250mW | - | 5.85 ns | - | 2 N-Channel (Dual) | SWITCHING | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | - | 50pF @ 25V | - | - | 60V | - | - | 280mA | 1.76V | 20V | - | - | - | 60V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | 1.76 V | 7 pF | 600μm | 1.7mm | 1.2mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| 2N7002V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDN2625DK6-GAnlielectronics Тип | Microchip Technology |
MOSFET N-CHANNEL DEPLETION MODE
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | 8-VDFN Exposed Pad | - | - | 37.393021mg | SILICON | - | 1 | 10 ns | -55°C~150°C TJ | Tray | 2013 | - | e3 | - | Active | 3 (168 Hours) | 8 | - | EAR99 | 3.5Ohm | MATTE TIN | LOW THRESHOLD | - | - | - | NO LEAD | 260 | - | - | 40 | - | - | - | R-PDSO-N8 | Not Qualified | - | 2 | 250V | Dual | 11A | - | - | DRAIN | 10 ns | - | 2 N-Channel (Dual) | SWITCHING | 3.5 Ω @ 1A, 0V | - | - | 1000pF @ 25V | 7.04nC @ 1.5V | 20ns | - | - | 20 ns | 1.1A | - | 20V | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Depletion Mode | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DN2625DK6-G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSTS1DNC45Anlielectronics Тип | STMicroelectronics |
MOSFET N-Ch 450 Volt 0.4 A
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | ACTIVE (Last Updated: 8 months ago) | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | SILICON | - | 2 | - | 150°C TJ | Tape & Reel (TR) | - | SuperMESH™ | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Matte Tin (Sn) - annealed | - | 450V | 1.6W | - | GULL WING | 260 | - | 400mA | 30 | STS1D | 8 | - | - | - | - | - | - | - | - | ENHANCEMENT MODE | 2W | - | 6.7 ns | - | 2 N-Channel (Dual) | SWITCHING | 4.5 Ω @ 500mA, 10V | 3.7V @ 250μA | - | 160pF @ 25V | 10nC @ 10V | 4ns | - | - | 4 ns | 400mA | - | 30V | - | 0.4A | - | 450V | 1.6A | - | - | 30 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| STS1DNC45 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPMDXB600UNEZAnlielectronics Тип | Nexperia USA Inc. |
MOSFET 2N-CH 20V 0.6A 6DFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | - | - | - | Surface Mount | 6-XFDFN Exposed Pad | YES | 6 | - | SILICON | - | 2 | 19 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | TrenchFET® | e3 | - | Active | 1 (Unlimited) | 6 | - | - | - | Tin (Sn) | - | - | 265mW | - | - | - | - | - | - | - | 6 | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | DRAIN | 5.6 ns | 265mW | 2 N-Channel (Dual) | SWITCHING | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | - | 21.3pF @ 10V | 0.7nC @ 4.5V | 9.2ns | - | - | 51 ns | 600mA | - | 8V | 20V | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| PMDXB600UNEZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMS3610SAnlielectronics Тип | ON Semiconductor |
MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE (Last Updated: 3 days ago) | - | Surface Mount | Surface Mount | 8-PowerTDFN | - | 8 | 171mg | SILICON | 17.5A 30A | 2 | 39 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Tin (Sn) | - | - | 1W | - | NO LEAD | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | - | - | R-PDSO-N6 | - | - | 2 | - | Dual | - | ENHANCEMENT MODE | - | DRAIN SOURCE | 11 ns | - | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 5m Ω @ 17.5A, 10V | 2V @ 250μA | - | 1570pF @ 13V | 26nC @ 10V | 5ns | - | - | 4 ns | 30A | - | 12V | - | 17.5A | 0.005Ohm | 25V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| FDMS3610S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMC7200SAnlielectronics Тип | ON Semiconductor |
MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | ACTIVE (Last Updated: 5 days ago) | - | Surface Mount | Surface Mount | 8-PowerWDFN | - | 8 | 186mg | SILICON | 7A 13A | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | - | - | 1W | - | NO LEAD | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | - | - | - | - | 2 | - | Dual | - | ENHANCEMENT MODE | - | DRAIN SOURCE | - | 700mW 1W | 2 N-Channel (Dual) | SWITCHING | 22m Ω @ 6A, 10V | 3V @ 250μA | - | 660pF @ 15V | 10nC @ 10V | - | 30V | - | - | 13A | - | 20V | - | 7A | - | - | - | - | 30V | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | 30 pF | - | - | - | - | - | ROHS3 Compliant | - | ||
| FDMC7200S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNVMFD5489NLWFT1GAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N-CH 60V 12A 8-Pin DFN T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 2 Weeks | ACTIVE (Last Updated: 4 days ago) | - | - | Surface Mount | 8-PowerTDFN | YES | 8 | 37.393021mg | - | 4.5A | - | 31 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | - | e3 | yes | Active | 1 (Unlimited) | - | - | EAR99 | - | Tin (Sn) | - | - | 3W | - | - | - | - | - | - | - | 8 | - | - | - | - | 2 | - | Dual | - | - | - | - | 7 ns | - | 2 N-Channel (Dual) | - | 65m Ω @ 15A, 10V | 2.5V @ 250μA | Halogen Free | 330pF @ 25V | 12.4nC @ 10V | 11ns | 60V | - | 21 ns | 12A | - | 20V | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NVMFD5489NLWFT1G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAO6604Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
Trans Mosfet N/p-ch 20V 3.4A/2.5A 6-PIN TSOP T/r
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | SC-74, SOT-457 | - | 6 | - | - | 3.4A 2.5A | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | 1.1W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ENHANCEMENT MODE | 1.1W | - | - | - | N and P-Channel Complementary | - | 65m Ω @ 3.4A, 4.5V | 1V @ 250μA | - | 320pF @ 10V | 3.8nC @ 4.5V | - | 20V | N-CHANNEL AND P-CHANNEL | - | 2.5A | - | - | - | 3.4A | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| AO6604 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDS4953Anlielectronics Тип | ON Semiconductor |
Trans MOSFET P-CH 30V 5A 8-Pin SOIC N T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 187mg | - | 5A | 2 | 14 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2002 | PowerTrench® | - | - | Obsolete | 1 (Unlimited) | - | SMD/SMT | - | - | - | - | -30V | 900mW | - | - | - | - | -5A | - | - | - | - | - | - | - | - | - | Dual | - | - | 2W | - | 7 ns | - | 2 P-Channel (Dual) | - | 55m Ω @ 5A, 10V | 3V @ 250μA | - | 528pF @ 15V | 9nC @ 5V | 13ns | 30V | - | 9 ns | -5A | -1.7V | 20V | - | - | - | -30V | - | -30V | - | - | - | Logic Level Gate | -1.7 V | - | 1.5mm | 5mm | 4mm | - | No SVHC | RoHS Compliant | Lead Free | ||
| FDS4953 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMN3135LVT-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CH 30V 3.5A TSOT26
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | - | - | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | 6 | - | SILICON | - | 1 | 13.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Matte Tin (Sn) | HIGH RELIABILITY | - | 840mW | - | GULL WING | 260 | - | - | 40 | - | 6 | - | - | - | SINGLE WITH BUILT-IN DIODE | 2 | - | - | - | ENHANCEMENT MODE | - | - | 2.6 ns | - | 2 N-Channel (Dual) | SWITCHING | 60m Ω @ 3.1A, 10V | 2.2V @ 250μA | - | 305pF @ 15V | 4.1nC @ 4.5V | 4.6ns | 30V | - | 2.5 ns | 3.5A | - | 20V | - | 3.3A | 0.047Ohm | 30V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMN3135LVT-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMG9926USD-13Anlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CH 20V 8A SOP8L
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 850.995985mg | SILICON | - | 2 | 64.8 ns | -55°C~150°C TJ | Digi-Reel® | 2009 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | 24mOhm | Matte Tin (Sn) | HIGH RELIABILITY | - | 1.3W | - | GULL WING | 260 | - | - | 40 | DMG9926USD | 8 | - | - | - | - | - | - | Dual | - | ENHANCEMENT MODE | 1.3W | - | 13.2 ns | - | 2 N-Channel (Dual) | SWITCHING | 24m Ω @ 8.2A, 4.5V | 900mV @ 250μA | - | 867pF @ 15V | 8.8nC @ 4.5V | 12.6ns | 20V | - | 21.7 ns | 8A | - | 8V | - | 8A | - | 20V | 30A | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | 1.5mm | 4.95mm | 3.95mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMG9926USD-13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDMC2400UV-13Anlielectronics Тип | Diodes Incorporated |
MOSFET N/P-CH 20V SOT563
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | SOT-563, SOT-666 | - | - | - | SILICON | 1.03A 700mA | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Matte Tin (Sn) | HIGH RELIABILITY | - | 450mW | DUAL | FLAT | - | - | - | - | - | 6 | AEC-Q101 | R-PDSO-F6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | N and P-Channel | SWITCHING | 480m Ω @ 200mA, 5V | 900mV @ 250μA | - | 37.1pF @ 10V | 0.5nC @ 4.5V | - | 20V | N-CHANNEL AND P-CHANNEL | - | 1.03A | - | - | - | - | 20Ohm | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Standard | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMC2400UV-13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNVMFD5877NLT3GAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 60V 6A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 10 hours ago) | - | - | Surface Mount | 8-PowerTDFN | YES | 8 | - | SILICON | 6A | 2 | 14.5 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2011 | - | e3 | yes | Not For New Designs | 1 (Unlimited) | 6 | - | EAR99 | - | Tin (Sn) | - | - | 3.2W | - | FLAT | - | - | - | - | - | 8 | - | R-PDSO-F6 | - | - | - | - | Dual | - | ENHANCEMENT MODE | 23W | DRAIN | 8.1 ns | - | 2 N-Channel (Dual) | SWITCHING | 39m Ω @ 7.5A, 10V | 3V @ 250μA | Halogen Free | 540pF @ 25V | 20nC @ 10V | - | 60V | - | - | 17A | - | 20V | - | 6A | 0.06Ohm | - | 74A | - | 60V | 10.5 mJ | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | 1.05mm | 6.1mm | 5.1mm | No | - | ROHS3 Compliant | Lead Free | ||
| NVMFD5877NLT3G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSTS8DN3LLH5Anlielectronics Тип | STMicroelectronics |
Dual Channel 30 V 10 A 19 mOhm Surface Mount Power Mosfet - SOIC-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | ACTIVE (Last Updated: 7 months ago) | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | SILICON | - | 2 | 21.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | STripFET™ V | e4 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | 19MOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | 2.7W | - | GULL WING | 260 | - | - | 30 | STS8DN | 8 | - | - | - | - | - | - | Dual | - | ENHANCEMENT MODE | 2.7W | - | 4 ns | - | 2 N-Channel (Dual) | SWITCHING | 19m Ω @ 5A, 10V | 1V @ 250μA | - | 724pF @ 25V | 5.4nC @ 4.5V | 4.2ns | 30V | - | 3.5 ns | 10A | - | 22V | - | - | - | 30V | 40A | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| STS8DN3LLH5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипUS6M11TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET N/P-CH 20V/12V TUMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | 6-SMD, Flat Leads | - | 6 | - | SILICON | 1.5A 1.3A | 2 | 30 ns | 150°C TJ | Tape & Reel (TR) | 2016 | - | e2 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | 600MOhm | TIN COPPER | - | - | 1W | DUAL | - | 260 | - | - | 10 | *M11 | 6 | - | - | - | - | 2 | - | - | - | ENHANCEMENT MODE | - | - | 8 ns | - | N and P-Channel | SWITCHING | 180m Ω @ 1.5A, 4.5V | 1V @ 1mA | - | 110pF @ 10V | 1.8nC @ 4.5V | 10ns | 20V 12V | N-CHANNEL AND P-CHANNEL | 9 ns | 1.3A | - | 10V | - | 1.5A | - | -12V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| US6M11TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипQS6J1TRAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2P-CH 20V 1.5A TSMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | 5 | - | SILICON | - | 2 | 45 ns | 150°C TJ | Tape & Reel (TR) | 2003 | - | e1 | yes | Not For New Designs | 1 (Unlimited) | 6 | - | EAR99 | 340MOhm | - | - | -20V | 1.25W | - | GULL WING | 260 | - | -1.5A | 10 | *J1 | 6 | - | R-PDSO-G6 | - | - | - | - | Dual | - | ENHANCEMENT MODE | 1.25W | - | 10 ns | - | 2 P-Channel (Dual) | SWITCHING | 215m Ω @ 1.5A, 4.5V | 2V @ 1mA | - | 270pF @ 10V | 3nC @ 4.5V | 12ns | 20V | - | 12 ns | 1.5A | -2V | 12V | - | - | - | -20V | 6A | - | - | - | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| QS6J1TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAO7800Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V SC70-6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | 6 | - | - | - | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | 300mW | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 300mW | - | - | - | 2 N-Channel (Dual) | - | 300m Ω @ 900mA, 4.5V | 900mV @ 250μA | - | 120pF @ 10V | 1.9nC @ 4.5V | - | 20V | - | - | 900mA | - | 8V | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| AO7800 |
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