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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Resistance Terminal Finish Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Supply Voltage Terminal Pitch Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Input Voltage-Nom Supply Voltage-Max (Vsup) Supply Voltage-Min (Vsup) Configuration Number of Channels Analog IC - Other Type Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Output Current-Max Transistor Application Input Voltage (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Control Technique Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Supply Current-Max (Isup) Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Switcher Configuration Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Max Dual Supply Voltage Switching Frequency-Max Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) FET Technology Max Junction Temperature (Tj) FET Feature Nominal Vgs Feedback Cap-Max (Crss) Height Height Seated (Max) Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor FDPC5030SG
Mfr. Тип
FDPC5030SG
Anlielectronics Тип

ON Semiconductor
MOSFET 2N-CH 30V PWRCLIP56
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 23 Weeks ACTIVE (Last Updated: 3 days ago) - Surface Mount Surface Mount 8-PowerWDFN - 8 207.7333mg - 17A 25A - - -55°C~150°C TJ Tape & Reel (TR) 2017 PowerTrench® e3 yes Active 1 (Unlimited) - EAR99 - Tin (Sn) - - 1.1W - - 260 - - - not_compliant - NOT SPECIFIED - - - - - - - - - - - - - - - 1W 1.1W 2 N-Channel (Dual) Asymmetrical - - - 5m Ω @ 17A, 10V 3V @ 250μA - - 1715pF @ 15V 24nC @ 10V - - 30V - - - 25A - - - - - - - - - - - Standard - - - - - - - - - ROHS3 Compliant -
    FDPC5030SG
    FDPC5030SG

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor NVMFD5852NLT1G
    Mfr. Тип
    NVMFD5852NLT1G
    Anlielectronics Тип

    		ON Semiconductor
    NVMFD5852NLT1G Dual N-channel MOSFET Transistor, 44 A, 40 V, 8-Pin DFN
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 13 Weeks ACTIVE, NOT REC (Last Updated: 3 days ago) - - Surface Mount 8-PowerTDFN YES 8 - SILICON - 2 27 ns -55°C~175°C TJ Tape & Reel (TR) 2014 - e3 yes Not For New Designs 1 (Unlimited) 6 EAR99 - Tin (Sn) - - 3.2W - FLAT - - - - not_compliant - - - 8 AEC-Q101 R-PDSO-F6 - - - - - - Dual ENHANCEMENT MODE 3.2W DRAIN 12 ns - 2 N-Channel (Dual) - - - 6.9m Ω @ 20A, 10V 2.4V @ 250μA Halogen Free - 1800pF @ 25V 36nC @ 10V - - 40V - - - 15A - 20V - - 44A - 40V - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1.05mm - 6.1mm 5.1mm - - - ROHS3 Compliant Lead Free
      NVMFD5852NLT1G
      NVMFD5852NLT1G

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Diodes Incorporated DMN601VK-7
      Mfr. Тип
      DMN601VK-7
      Anlielectronics Тип

      		Diodes Incorporated
      MOSFET 2N-CH 60V 0.305A SOT-563
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 16 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 3.005049mg SILICON - 2 - -65°C~150°C TJ Tape & Reel (TR) 2007 - e3 yes Active 1 (Unlimited) 6 EAR99 2Ohm Matte Tin (Sn) LOW CAPACITANCE 60V 250mW - FLAT 260 - - - - 305mA 40 DMN601VK 6 - - - - - - - - Dual ENHANCEMENT MODE 250mW - - - 2 N-Channel (Dual) - SWITCHING - 2 Ω @ 500mA, 10V 2.5V @ 250μA - - 50pF @ 25V - - - - - - - 305mA - 20V - - 0.305A - 60V - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - 5 pF 600μm - 1.6mm 1.2mm - No No SVHC ROHS3 Compliant Lead Free
        DMN601VK-7
        DMN601VK-7

        Diodes Incorporated
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Texas Instruments CSD87334Q3D
        Mfr. Тип
        CSD87334Q3D
        Anlielectronics Тип

        		Texas Instruments
        MOSFET 2N-CH 30V 20A 8SON
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 8 Weeks ACTIVE (Last Updated: 3 days ago) Gold Surface Mount Surface Mount 8-PowerTDFN - 8 - - - - - -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e3 yes Active 1 (Unlimited) 8 EAR99 - Matte Tin (Sn) - - 6W - NO LEAD 260 1 - 0.65mm not_compliant - NOT SPECIFIED CSD87334 - - - 12V - - - - SWITCHING CONTROLLER - - - - - 6W 2 N-Channel (Dual) Asymmetrical - - 24V 6m Ω @ 12A, 8V 1.2V @ 250μA - PULSE WIDTH MODULATION 1260pF @ 15V 8.3nC @ 4.5V - 20mA 30V - - BUCK 20A - - - 1500kHz - - - - - - - Logic Level Gate - - - 1.05mm 3.3mm 3.3mm 900μm - - ROHS3 Compliant Contains Lead
          CSD87334Q3D
          CSD87334Q3D

          Texas Instruments
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Infineon Technologies BSL214NH6327XTSA1
          Mfr. Тип
          BSL214NH6327XTSA1
          Anlielectronics Тип

          		Infineon Technologies
          MOSFET 2N-CH 20V 1.5A 6TSOP
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 12 Weeks - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 - SILICON - 2 - -55°C~150°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ e3 yes Obsolete 1 (Unlimited) 6 - - Tin (Sn) AVALANCHE RATED - 500mW - GULL WING NOT SPECIFIED - - - - - NOT SPECIFIED - - - - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - 500mW 2 N-Channel (Dual) - - - 140m Ω @ 1.5A, 4.5V 1.2V @ 3.7μA Halogen Free - 143pF @ 10V 0.8nC @ 5V 7.6ns - - - - - 1.5A - 12V 20V - - 0.14Ohm - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate, 2.5V Drive - 9 pF - - - - - - - ROHS3 Compliant Lead Free
            BSL214NH6327XTSA1
            BSL214NH6327XTSA1

            Infineon Technologies
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor SI4542DY
            Mfr. Тип
            SI4542DY
            Anlielectronics Тип

            		ON Semiconductor
            MOSFET, N & P CH, 30V, 0.028OHM, 6A, SOIC-8; Transistor Polarity: N and P Channel
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 8 Weeks ACTIVE (Last Updated: 16 hours ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 230.4mg SILICON - 2 47 ns -55°C~175°C TJ Tape & Reel (TR) 2001 PowerTrench® e3 yes Active 1 (Unlimited) 8 EAR99 - Tin (Sn) - 30V 1W DUAL GULL WING - - - - - 7A - SI4542D - - - - - - - - - Single ENHANCEMENT MODE 2W - - - N and P-Channel - SWITCHING - 28m Ω @ 6A, 10V 3V @ 250μA - - 830pF @ 15V 13nC @ 5V 22ns - - N-CHANNEL AND P-CHANNEL 18 ns - 6A 1.5V 20V - - 6A - 30V - - METAL-OXIDE SEMICONDUCTOR - Standard 1.5 V - 1.575mm - 4.9mm 3.9mm - No No SVHC ROHS3 Compliant Lead Free
              SI4542DY
              SI4542DY

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor FDMS3622S
              Mfr. Тип
              FDMS3622S
              Anlielectronics Тип

              		ON Semiconductor
              MOSFET PowerStage 25V Dual N-Channel MOSFET
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 13 Weeks ACTIVE (Last Updated: 3 days ago) - Surface Mount Surface Mount 8-PowerTDFN - 8 171mg SILICON 17.5A 34A 2 23 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e3 yes Active 1 (Unlimited) 6 EAR99 - Tin (Sn) - - 1W - - - - - - - - - - - - R-PDSO-N6 - - - - - - Dual ENHANCEMENT MODE 2.5W DRAIN SOURCE 7 ns - 2 N-Channel (Dual) Asymmetrical - SWITCHING - 5m Ω @ 17.5A, 10V 2V @ 250μA - - 1570pF @ 13V 26nC @ 10V - - - - - - 34A - 12V - - 17.5A 0.005Ohm 25V - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1.05mm - 5.1mm 6.1mm - No - ROHS3 Compliant -
                FDMS3622S
                FDMS3622S

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                ON Semiconductor FDMA1023PZ
                Mfr. Тип
                FDMA1023PZ
                Anlielectronics Тип

                		ON Semiconductor
                MOSFET 2P-CH 20V 3.7A MICROFET
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 16 Weeks ACTIVE (Last Updated: 3 days ago) Gold Surface Mount Surface Mount 6-VDFN Exposed Pad - 6 40mg SILICON 3.7A 2 64 ns -55°C~150°C TJ Tape & Reel (TR) 2009 PowerTrench® e4 yes Active 1 (Unlimited) 6 EAR99 - - - - 1.5W - - - - - - - - - - - - - - - - - - - Dual ENHANCEMENT MODE 1.5W DRAIN 9 ns 700mW 2 P-Channel (Dual) - SWITCHING - 72m Ω @ 3.7A, 4.5V 1.5V @ 250μA - - 655pF @ 10V 12nC @ 4.5V 12ns - 20V - 12 ns - -3.7A -700mV 8V - - - - -20V - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate -700 mV 135 pF 750μm - 2mm 2mm - No No SVHC ROHS3 Compliant Lead Free
                  FDMA1023PZ
                  FDMA1023PZ

                  ON Semiconductor
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor NTJD5121NT2G
                  Mfr. Тип
                  NTJD5121NT2G
                  Anlielectronics Тип

                  		ON Semiconductor
                  MOSFET 2N-CH 60V 0.295A SOT363
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 8 Weeks ACTIVE (Last Updated: 2 days ago) - - Surface Mount 6-TSSOP, SC-88, SOT-363 YES 6 - SILICON - 2 34 ns -55°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) 6 EAR99 - Tin (Sn) LOW THRESHOLD - 250mW - GULL WING - - - - - - - NTJD5121N 6 - - - - - - - - Dual ENHANCEMENT MODE 250mW - 22 ns - 2 N-Channel (Dual) - SWITCHING - 1.6 Ω @ 500mA, 10V 2.5V @ 250μA - - 26pF @ 20V 0.9nC @ 4.5V 34ns - 60V - 32 ns - 295mA 1.7V 20V - - - - 60V - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1mm - 2.2mm 1.35mm - No No SVHC ROHS3 Compliant Lead Free
                    NTJD5121NT2G
                    NTJD5121NT2G

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Diodes Incorporated ZXMC3A17DN8TA
                    Mfr. Тип
                    ZXMC3A17DN8TA
                    Anlielectronics Тип

                    		Diodes Incorporated
                    MOSFET N/P-CH 30V 8SOIC
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON 4.1A 3.4A 2 29.2 ns -55°C~150°C TJ Cut Tape (CT) 2006 - e3 yes Active 1 (Unlimited) 8 EAR99 70mOhm Matte Tin (Sn) - - 2.1W DUAL GULL WING 260 - - - - 5.4A 40 - 8 - - - - - - 2 - - ENHANCEMENT MODE 2.1W - 1.7 ns 1.25W N and P-Channel - SWITCHING - 50m Ω @ 7.8A, 10V 1V @ 250μA (Min) - - 600pF @ 25V 12.2nC @ 10V 2.9ns - - N-CHANNEL AND P-CHANNEL 8.7 ns - 5.4A 1V 20V - - - - 30V - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1.5mm - 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                      ZXMC3A17DN8TA
                      ZXMC3A17DN8TA

                      Diodes Incorporated
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ON Semiconductor FDMS3606S
                      Mfr. Тип
                      FDMS3606S
                      Anlielectronics Тип

                      		ON Semiconductor
                      MOSFET iFET - Smart Harvest
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 13 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount 8-PowerTDFN - 8 171mg SILICON 13A 27A 2 36 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e3 yes Active 1 (Unlimited) 6 EAR99 - Tin (Sn) - - 1W - FLAT NOT SPECIFIED - - - not_compliant - NOT SPECIFIED - - - R-PDSO-F6 - - - - 2 - - ENHANCEMENT MODE - DRAIN SOURCE 15 ns - 2 N-Channel (Dual) Asymmetrical - SWITCHING - 8m Ω @ 13A, 10V 2.7V @ 250μA - - 1785pF @ 15V 29nC @ 10V 5.5ns - - - 3.4 ns - 27A - 20V - - 13A - 30V - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1mm - 6mm 5mm - - - ROHS3 Compliant -
                        FDMS3606S
                        FDMS3606S

                        ON Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Diodes Incorporated DMT3009LDT-7
                        Mfr. Тип
                        DMT3009LDT-7
                        Anlielectronics Тип

                        		Diodes Incorporated
                        MOSFET 2N-CH 30V 30A V-DFN3030-8
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 23 Weeks - - Surface Mount Surface Mount 8-VDFN Exposed Pad - - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2015 - e4 yes Active 1 (Unlimited) - EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) - - 1.2W - - NOT SPECIFIED - - - - - NOT SPECIFIED - - - - - - - - - - - - - - - 1.2W 2 N-Channel (Dual) Asymmetrical - - - 11.1m Ω @ 14.4A, 10V 3V @ 250μA - - 1500pF @ 15V 20nC @ 15V - - 30V - - - 30A - - - - - - - - - - - Standard - - - - - - - - - ROHS3 Compliant -
                          DMT3009LDT-7
                          DMT3009LDT-7

                          Diodes Incorporated
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor ECH8697R-TL-W
                          Mfr. Тип
                          ECH8697R-TL-W
                          Anlielectronics Тип

                          		ON Semiconductor
                          MOSFET 2N-CH 24V 10A SOT-28
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 20 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount 8-SMD, Flat Lead - - - - - - 19.7 μs 150°C TJ Tape & Reel (TR) 2013 - e6 yes Active 1 (Unlimited) - EAR99 - Tin/Bismuth (Sn/Bi) - - 1.5W - - - - - - not_compliant - - - - - - - - - - 2 - Dual - - - 160 ns - 2 N-Channel (Dual) Common Drain - - - 11.6m Ω @ 5A, 4.5V - - - - 6nC @ 4.5V 230ns - 24V - 23.6 μs - 10A - 12.5V - - - - 24V - - - - Logic Level Gate, 2.5V Drive - - - - - - - - - ROHS3 Compliant Lead Free
                            ECH8697R-TL-W
                            ECH8697R-TL-W

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Texas Instruments CSD88584Q5DCT
                            Mfr. Тип
                            CSD88584Q5DCT
                            Anlielectronics Тип

                            		Texas Instruments
                            40V, Nch synchronous buck NexFET MOSFET™, SON5x6 dualCool PowerBlock, 50A 22-VSON-CLIP -55 to 150
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 8 Weeks ACTIVE (Last Updated: 2 days ago) - - Surface Mount 22-PowerTFDFN YES 22 - - - - - -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e3 yes Active 1 (Unlimited) 22 - - Matte Tin (Sn) - - - DUAL NO LEAD 260 1 10V - not_compliant - NOT SPECIFIED CSD88584 - - - - 16V 4.5V - - BRUSHLESS DC MOTOR CONTROLLER - - - - - 12W 2 N-Channel (Half Bridge) 50A - - 0.95m Ω @ 30A, 10V 2.3V @ 250μA - - 12400pF @ 20V 88nC @ 4.5V - - 40V - - - - - - - - - - - - - - - Standard - - - - 6mm 5mm 850μm - - ROHS3 Compliant -
                              CSD88584Q5DCT
                              CSD88584Q5DCT

                              Texas Instruments
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies IPG20N06S4L14AATMA1
                              Mfr. Тип
                              IPG20N06S4L14AATMA1
                              Anlielectronics Тип

                              		Infineon Technologies
                              Trans MOSFET N-CH 60V 20A Automotive
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 12 Weeks - - Surface Mount Surface Mount, Wettable Flank 8-PowerVDFN - 8 - SILICON - 2 - -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ e3 yes Active 1 (Unlimited) 8 EAR99 - Tin (Sn) LOGIC LEVEL COMPATIBLE - 50W - FLAT NOT SPECIFIED - - - not_compliant - NOT SPECIFIED - - - - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - - 2 N-Channel (Dual) - - - 13.7m Ω @ 17A, 10V 2.2V @ 20μA Halogen Free - 2890pF @ 25V 39nC @ 10V - - 60V - - - 20A - - 60V - - 0.0137Ohm - - 90 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - - ROHS3 Compliant Contains Lead
                                IPG20N06S4L14AATMA1
                                IPG20N06S4L14AATMA1

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor NTHD4502NT1G
                                Mfr. Тип
                                NTHD4502NT1G
                                Anlielectronics Тип

                                		ON Semiconductor
                                MOSFET 30V 3.9A Dual N-Channel
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 2 Weeks ACTIVE (Last Updated: 10 hours ago) - - Surface Mount 8-SMD, Flat Lead YES 8 4.535924g SILICON 2.2A 2 14.9 ns -55°C~150°C TJ Tape & Reel (TR) 2005 - e3 yes Active 1 (Unlimited) 8 EAR99 80MOhm Tin (Sn) - 30V 640mW - C BEND 260 - - - - 2.9A 40 NTHD4502N 8 - - - - - - - - Dual ENHANCEMENT MODE 1.13W - 7.8 ns - 2 N-Channel (Dual) - SWITCHING - 85m Ω @ 2.9A, 10V 3V @ 250μA - - 140pF @ 15V 7nC @ 10V 5.4ns - - - 5.4 ns - 3.9A - 20V - - - - -20V - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1.1mm - 3.1mm 1.7mm - No - ROHS3 Compliant Lead Free
                                  NTHD4502NT1G
                                  NTHD4502NT1G

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Diodes Incorporated DMP2160UFDB-7
                                  Mfr. Тип
                                  DMP2160UFDB-7
                                  Anlielectronics Тип

                                  		Diodes Incorporated
                                  MOSFET 20V 3.8A DUAL P-CHAN
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 6 Weeks - - Surface Mount Surface Mount 6-UDFN Exposed Pad - 6 - SILICON - 2 55.34 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e4 yes Obsolete 1 (Unlimited) 6 EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) HIGH RELIABILITY - 1.4W - - 260 - - - - - 40 - 6 - - - - - - - - Dual ENHANCEMENT MODE 1.4W - 11.51 ns - 2 P-Channel (Dual) - SWITCHING - 70m Ω @ 2.8A, 4.5V 900mV @ 250μA - - 536pF @ 10V 6.5nC @ 4.5V 12.09ns - 20V - 12.09 ns - 3.8A - 12V - - - 0.07Ohm -20V 13A - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 750μm - 2mm 2mm - No No SVHC ROHS3 Compliant Lead Free
                                    DMP2160UFDB-7
                                    DMP2160UFDB-7

                                    Diodes Incorporated
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Diodes Incorporated 2N7002DWQ-7-F
                                    Mfr. Тип
                                    2N7002DWQ-7-F
                                    Anlielectronics Тип

                                    		Diodes Incorporated
                                    MOSFET 2N-CH 60V 0.23A SOT363
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 16 Weeks - Tin Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - - - SILICON - 2 11 ns -55°C~150°C TJ Tape & Reel (TR) 2010 - e3 yes Active 1 (Unlimited) 6 EAR99 - - HIGH RELIABILITY - 310mW - GULL WING 260 - - - - - 40 - - AEC-Q101 R-PDSO-G6 - - - - 2 - - ENHANCEMENT MODE 310mW - 7 ns - 2 N-Channel (Dual) - SWITCHING - 7.5 Ω @ 50mA, 5V 2V @ 250μA - - 50pF @ 25V - - - 60V - - - 230mA - 20V - - - - 70V - - METAL-OXIDE SEMICONDUCTOR 150°C Standard - 5 pF 1.1mm - - - - - - ROHS3 Compliant -
                                      2N7002DWQ-7-F
                                      2N7002DWQ-7-F

                                      Diodes Incorporated
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor FDMS7600AS
                                      Mfr. Тип
                                      FDMS7600AS
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      MOSFET 30V Dual N-Channel PowerTrench
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 16 Weeks ACTIVE (Last Updated: 3 days ago) - Surface Mount Surface Mount 8-PowerWDFN - 8 211mg SILICON 12A 22A 2 45 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e4 yes Active 1 (Unlimited) 6 EAR99 - Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) - - 1W - FLAT - - - - - - - - - - R-PDSO-F6 - - - - - - - ENHANCEMENT MODE 1W SOURCE - - 2 N-Channel (Dual) - SWITCHING - 7.5m Ω @ 12A, 10V 3V @ 250μA - - 1750pF @ 15V 28nC @ 10V 7.6ns - - - 5.2 ns - 40A 1V 20V - - - 0.0075Ohm 30V - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate 1 V - 700μm - 5mm 6mm - No No SVHC ROHS3 Compliant Lead Free
                                        FDMS7600AS
                                        FDMS7600AS

                                        ON Semiconductor
                                        RoHS :
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                                        Diodes Incorporated DMC3028LSD-13
                                        Mfr. Тип
                                        DMC3028LSD-13
                                        Anlielectronics Тип

                                        		Diodes Incorporated
                                        MOSFET N/P-CH 30V 6.6A/6.8A 8SO
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON 6.6A 6.8A 2 44 ns -55°C~150°C TJ Digi-Reel® 2009 - e3 yes Active 1 (Unlimited) 8 EAR99 - Matte Tin (Sn) - - 1.8W DUAL GULL WING 260 - - - - - 40 DMC3028LSD 8 - - - - - - - - - ENHANCEMENT MODE 2.1W - 3.5 ns - N and P-Channel - SWITCHING - 28m Ω @ 6A, 10V 3V @ 250μA - - 472pF @ 15V 10.5nC @ 10V 4.9ns - - N-CHANNEL AND P-CHANNEL 28 ns - 7.4A - 20V - - 5.5A - 30V - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1.5mm - 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                                          DMC3028LSD-13
                                          DMC3028LSD-13

                                          Diodes Incorporated
                                          RoHS :
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                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: FDPC5030SG,NVMFD5852NLT1G,DMN601VK-7,CSD87334Q3D,BSL214NH6327XTSA1.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.