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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Resistance Terminal Finish Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Input Voltage-Nom Configuration Number of Channels Analog IC - Other Type Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max Input Voltage (Min) FET Type Output Current-Max Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Supply Current-Max (Isup) Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Switcher Configuration Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Max Dual Supply Voltage Switching Frequency-Max Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology FET Feature Drain to Source Resistance Nominal Vgs Feedback Cap-Max (Crss) Height Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor EFC4621R-TR
Mfr. Тип
EFC4621R-TR
Anlielectronics Тип

ON Semiconductor
MOSFET NCH 2.5V DRIVE SERIES
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 18 Weeks ACTIVE (Last Updated: 6 days ago) - Surface Mount Surface Mount 4-XFBGA, FCBGA - 4 - - - - 26 μs 150°C TJ Tape & Reel (TR) 2016 - - yes Active 1 (Unlimited) - EAR99 - - - - 1.6W - - - - - - - - - - - - - - 2 - Dual - - - 340 ns - - 2 N-Channel (Dual) - - - - Halogen Free - 29nC @ 4.5V 600ns - 24V - 28 μs - 9A - 12.5V - - 9A - - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate, 2.5V Drive 18mOhm - - - - - - No - ROHS3 Compliant Lead Free
    EFC4621R-TR
    EFC4621R-TR

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor NVMFD5485NLT1G
    Mfr. Тип
    NVMFD5485NLT1G
    Anlielectronics Тип

    		ON Semiconductor
    Trans MOSFET N-CH 60V 19.5A 8-Pin DFN T/R
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 4 Weeks ACTIVE, NOT REC (Last Updated: 3 days ago) - - Surface Mount 8-PowerTDFN - 8 - - - - 27.8 ns -55°C~175°C TJ Tape & Reel (TR) 2014 - e3 yes Not For New Designs 1 (Unlimited) - EAR99 - Tin (Sn) - - 2.9W - - - - - - - - - 8 - - - - 2 - Dual - - - 9.5 ns - - 2 N-Channel (Dual) - - 44m Ω @ 15A, 10V 2.5V @ 250μA Halogen Free 560pF @ 25V 20nC @ 10V 26.6ns - 60V - 23.7 ns - 5.3A - 20V - - - - - - - - - - - Logic Level Gate - - - - - - - No - ROHS3 Compliant Lead Free
      NVMFD5485NLT1G
      NVMFD5485NLT1G

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Diodes Incorporated DMN3018SSD-13
      Mfr. Тип
      DMN3018SSD-13
      Anlielectronics Тип

      		Diodes Incorporated
      MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 15 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON - 2 20.1 ns -55°C~150°C TJ Tape & Reel (TR) 2013 - e3 yes Active 1 (Unlimited) 8 EAR99 - Matte Tin (Sn) HIGH RELIABILITY - 1.5W - GULL WING 260 - - - - 40 - - AEC-Q101 - - - 2 - Single ENHANCEMENT MODE - - 4.3 ns - - 2 N-Channel (Dual) - SWITCHING 22m Ω @ 10A, 10V 2.1V @ 250μA - 697pF @ 15V 13.2nC @ 10V 4.4ns - 30V - 4.1 ns - 6.7A - 20V - - - - 30V 60A - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 1.5mm 4.95mm 3.95mm - - No SVHC ROHS3 Compliant -
        DMN3018SSD-13
        DMN3018SSD-13

        Diodes Incorporated
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor FDPC8013S
        Mfr. Тип
        FDPC8013S
        Anlielectronics Тип

        		ON Semiconductor
        FAIRCHILD SEMICONDUCTOR FDPC8013SDual MOSFET, Dual N Channel, 55 A, 30 V, 0.0014 ohm, 10 V, 1.7 V
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 12 Weeks ACTIVE (Last Updated: 3 days ago) - Surface Mount Surface Mount 8-PowerWDFN - 8 192mg - 13A 26A 2 30 ns -55°C~150°C TJ Digi-Reel® 2009 PowerTrench® e3 yes Active 1 (Unlimited) - EAR99 - Tin (Sn) - - 2W - - - - - - - - - - - - - - - - Dual - 2W - 6 ns 800mW 900mW - 2 N-Channel (Dual) - - 6.4m Ω @ 13A, 10V 3V @ 250μA - 827pF @ 15V 13nC @ 10V 5ns - - - 4 ns - 55A 1.7V 20V - - - - 30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - 1.7 V - 750μm 3.4mm 3.4mm - No No SVHC ROHS3 Compliant Lead Free
          FDPC8013S
          FDPC8013S

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Texas Instruments CSD87331Q3D
          Mfr. Тип
          CSD87331Q3D
          Anlielectronics Тип

          		Texas Instruments
          MOSFET 2N-CH 30V 15A 8SON
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 6 Weeks ACTIVE (Last Updated: 5 days ago) - Surface Mount Surface Mount 8-PowerLDFN - 8 - - - - 11.2 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e4 yes Active 1 (Unlimited) 8 EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) - - 6W - - 260 1 0.65mm - - - CSD87331 8 - - 27V - - SWITCHING CONTROLLER Dual - 6W - 3.8 ns - 12V 2 N-Channel (Half Bridge) 45A - - 2.1V, 1.2V @ 250μA - 518pF @ 15V 3.2nC @ 4.5V 4.7ns 15mA 30V - 2.4 ns PUSH-PULL 15A 2.1V 1.2V - 1500kHz - - 30V - - - - - - Standard - - - 1.5mm 3.3mm 3.3mm 1.5mm No No SVHC ROHS3 Compliant Contains Lead
            CSD87331Q3D
            CSD87331Q3D

            Texas Instruments
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor FDS6982
            Mfr. Тип
            FDS6982
            Anlielectronics Тип

            		ON Semiconductor
            MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 187mg - 6.3A 8.6A 2 36 ns -55°C~150°C TJ Tape & Reel (TR) - - - - Obsolete 1 (Unlimited) - - 15mOhm - - 30V 2W - - - - - - 8.6A - - - - - - - - - Dual - 2W - - 900mW - 2 N-Channel (Dual) - - 28m Ω @ 6.3A, 10V 3V @ 250μA - 760pF @ 10V 12nC @ 5V 11ns - - - 18 ns - 8.6A 2.2V 20V - - - - 30V - 30V - - - - Logic Level Gate - 2.2 V - 1.5mm 5mm 4mm - - No SVHC RoHS Compliant Lead Free
              FDS6982
              FDS6982

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Texas Instruments CSD86360Q5D
              Mfr. Тип
              CSD86360Q5D
              Anlielectronics Тип

              		Texas Instruments
              25V, Nch synchronous buck NexFET MOSFET™, SON5x6 PowerBlock, 50A 8-LSON-CLIP -55 to 150
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 6 Weeks ACTIVE (Last Updated: 2 days ago) Gold Surface Mount Surface Mount 8-PowerLDFN - 8 - - - - 29.3 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e3 yes Active 1 (Unlimited) 8 EAR99 - Matte Tin (Sn) - - 13W DUAL NO LEAD 260 1 - not_compliant - NOT SPECIFIED CSD86360 - - - 12V - 2 SWITCHING REGULATOR - - - - 9.5 ns - - 2 N-Channel (Half Bridge) - - - 2.1V @ 250μA - 2060pF @ 12.5 12.6nC @ 4.5V 14.8ns 50mA 25V - 6.6 ns BUCK 50A - 10V - 1500kHz - - 25V - - - - - - Logic Level Gate 3.7mOhm - - 1.5mm 5mm 6mm 1.5mm - No SVHC ROHS3 Compliant Contains Lead
                CSD86360Q5D
                CSD86360Q5D

                Texas Instruments
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Alpha & Omega Semiconductor Inc. AO6601
                Mfr. Тип
                AO6601
                Anlielectronics Тип

                		Alpha & Omega Semiconductor Inc.
                MOSFET N/P-CH 30V 6-TSOP
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 18 Weeks - - Surface Mount Surface Mount SC-74, SOT-457 - 6 - - 3.4A 2.3A 2 - -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 - Active 1 (Unlimited) - EAR99 - Matte Tin (Sn) - - 1.15W - - - - - - - - - - - - - - - - - ENHANCEMENT MODE 1.15W - - - - N and P-Channel Complementary - - 60m Ω @ 3.4A, 10V 1.5V @ 250μA - 285pF @ 15V 12nC @ 10V - - 30V N-CHANNEL AND P-CHANNEL - - 2.3A - 12V - - 3.4A - - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - No - ROHS3 Compliant -
                  AO6601
                  AO6601

                  Alpha & Omega Semiconductor Inc.
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor FDMC8200S
                  Mfr. Тип
                  FDMC8200S
                  Anlielectronics Тип

                  		ON Semiconductor
                  DUAL N CH MOSFET, POWERTRENCH, 30V, 18A, POWER33 - More Details
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 23 Weeks ACTIVE (Last Updated: 1 week ago) - Surface Mount Surface Mount 8-PowerWDFN - 8 186mg SILICON 6A 8.5A 2 35 ns -55°C~150°C TJ Tape & Reel (TR) 2010 PowerTrench® e4 yes Active 1 (Unlimited) 8 EAR99 20MOhm Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) - - 1W - - - - - - - - - - - - - - - - - ENHANCEMENT MODE 2.5W DRAIN SOURCE - 700mW 1W - 2 N-Channel (Dual) - SWITCHING 20m Ω @ 6A, 10V 3V @ 250μA - 660pF @ 15V 10nC @ 10V - - - - - - 18A - 20V - - 6A - 30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - 2.3 V 30 pF 750μm 3mm 3mm - No No SVHC ROHS3 Compliant Lead Free
                    FDMC8200S
                    FDMC8200S

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Microchip Technology TC8020K6-G
                    Mfr. Тип
                    TC8020K6-G
                    Anlielectronics Тип

                    		Microchip Technology
                    Trans MOSFET N/P-CH 200V 56-Pin QFN EP Tray
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 17 Weeks - Tin Surface Mount Surface Mount 56-VFQFN Exposed Pad - 56 191.387631mg SILICON - 6 20 ns -55°C~150°C TJ Tray 2012 - e4 - Active 3 (168 Hours) 56 EAR99 - NICKEL PALLADIUM GOLD - - - QUAD - 260 - - - - 40 - - - - - COMPLEX 12 - - ENHANCEMENT MODE - - 10 ns - - 6 N and 6 P-Channel - SWITCHING 8 Ω @ 1A, 10V 2.4V @ 1mA - 50pF @ 25V - 15ns - 200V N-CHANNEL AND P-CHANNEL 15 ns - - - - - - - 8Ohm -200V - - - - - METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - No - ROHS3 Compliant -
                      TC8020K6-G
                      TC8020K6-G

                      Microchip Technology
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Infineon Technologies BSL806NH6327XTSA1
                      Mfr. Тип
                      BSL806NH6327XTSA1
                      Anlielectronics Тип

                      		Infineon Technologies
                      MOSFET 2 N-CH 20V 2.3A TSOP6-6
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 12 Weeks - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 - SILICON 2.3A Ta 2 - -55°C~150°C TJ Tape & Reel (TR) 2013 OptiMOS™ e3 - Discontinued 1 (Unlimited) 6 EAR99 - Tin (Sn) AVALANCHE RATED - - - GULL WING NOT SPECIFIED - - - - NOT SPECIFIED - - AEC-Q101 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - - - 500mW - 2 N-Channel (Dual) - - 57m Ω @ 2.3A, 2.5V 750mV @ 11μA Halogen Free 259pF @ 10V 1.7nC @ 2.5V - - - - - - - - - 20V - 2.3A 0.057Ohm - - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate, 1.8V Drive - - - - - - - - - ROHS3 Compliant Lead Free
                        BSL806NH6327XTSA1
                        BSL806NH6327XTSA1

                        Infineon Technologies
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor NVMFD5C470NLWFT1G
                        Mfr. Тип
                        NVMFD5C470NLWFT1G
                        Anlielectronics Тип

                        		ON Semiconductor
                        MOSFET 2N-CH 40V 36A S08FL
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 48 Weeks ACTIVE (Last Updated: 4 days ago) - - Surface Mount 8-PowerTDFN YES - - SILICON 11A Ta 36A Tc 2 - -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) 6 - - Tin (Sn) - - - - FLAT 260 - - not_compliant - 30 - - - R-PDSO-F6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - DRAIN - 3W Ta 24W Tc - 2 N-Channel (Dual) - - 11.5m Ω @ 5A, 10V 2.2V @ 20μA - 590pF @ 25V 4nC @ 4.5V - - 40V - - - - - - - - - 0.0178Ohm - 110A - - 40V 49 mJ METAL-OXIDE SEMICONDUCTOR Standard - - - - - - - - - ROHS3 Compliant -
                          NVMFD5C470NLWFT1G
                          NVMFD5C470NLWFT1G

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Infineon Technologies AUIRF7309QTR
                          Mfr. Тип
                          AUIRF7309QTR
                          Anlielectronics Тип

                          		Infineon Technologies
                          MOSFET N/P-CH 30V 4A/3A 8SOIC
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 8 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON 4A 3A 2 - -55°C~150°C TJ Tape & Reel (TR) 2011 HEXFET® e3 - Active 1 (Unlimited) 8 EAR99 - Matte Tin (Sn) HIGH RELIABILITY - 1.4W - GULL WING - - - - - - - - - - - - - - Dual ENHANCEMENT MODE 1.4W - - - - N and P-Channel - SWITCHING 50m Ω @ 2.4A, 10V 3V @ 250μA - 520pF @ 15V 25nC @ 4.5V - - - N-CHANNEL AND P-CHANNEL - - 3A - 20V - - 4A 0.05Ohm 30V 16A - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - 1 V - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant -
                            AUIRF7309QTR
                            AUIRF7309QTR

                            Infineon Technologies
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Diodes Incorporated ZXMN6A11DN8TA
                            Mfr. Тип
                            ZXMN6A11DN8TA
                            Anlielectronics Тип

                            		Diodes Incorporated
                            MOSFET Dl 60V N-Chnl UMOS
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON 2.5A 2 8.2 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Active 1 (Unlimited) 8 EAR99 120mOhm Matte Tin (Sn) - 60V 2.1W - GULL WING 260 - - - 2.7A 40 - 8 - - - - 2 - - ENHANCEMENT MODE 2.1W - 1.95 ns 1.8W - 2 N-Channel (Dual) - SWITCHING 120m Ω @ 2.5A, 10V 1V @ 250μA (Min) - 330pF @ 40V 5.7nC @ 10V 3.5ns - - - 4.6 ns - 3.2A 1V 20V - - - - 60V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                              ZXMN6A11DN8TA
                              ZXMN6A11DN8TA

                              Diodes Incorporated
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              ON Semiconductor FDMB2307NZ
                              Mfr. Тип
                              FDMB2307NZ
                              Anlielectronics Тип

                              		ON Semiconductor
                              MOSFET 20V 2xCommon Drn Nch PowerTrench MOSFET
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 16 Weeks ACTIVE (Last Updated: 4 days ago) Gold Surface Mount Surface Mount 6-WDFN Exposed Pad - 6 12.0024mg SILICON - 2 32 ns -55°C~150°C TJ Tape & Reel (TR) 2017 PowerTrench® e4 yes Active 1 (Unlimited) 6 EAR99 - - - - 800mW - - - - - - - - FDMB2307 - - - - - - - - ENHANCEMENT MODE 2.2W - 12 ns - - 2 N-Channel (Dual) Common Drain - SWITCHING - - - - 28nC @ 5V 34ns - 20V - 17 ns - 8A 1V 12V - - 9.7A - - - - 1.76nF - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 750μm 2mm 3mm - No No SVHC ROHS3 Compliant Lead Free
                                FDMB2307NZ
                                FDMB2307NZ

                                ON Semiconductor
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Infineon Technologies AUIRF7103QTR
                                Mfr. Тип
                                AUIRF7103QTR
                                Anlielectronics Тип

                                		Infineon Technologies
                                MOSFET 2N-CH 50V 3A 8SOIC
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 26 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON - 2 15 ns -55°C~175°C TJ Tape & Reel (TR) 2009 Automotive, AEC-Q101, HEXFET® e3 - Not For New Designs 1 (Unlimited) 8 EAR99 - Matte Tin (Sn) HIGH RELIABILITY - 2.4W - GULL WING - - - - - - - - - - - - - - Dual ENHANCEMENT MODE 2.4W - 5.1 ns - - 2 N-Channel (Dual) - SWITCHING 130m Ω @ 3A, 10V 3V @ 250μA - 255pF @ 25V 15nC @ 10V 1.7ns - 50V - 2.3 ns - 3A 1V 20V - - 3A 0.13Ohm 50V - - - - - METAL-OXIDE SEMICONDUCTOR Standard - - - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                                  AUIRF7103QTR
                                  AUIRF7103QTR

                                  Infineon Technologies
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Alpha & Omega Semiconductor Inc. AO6800
                                  Mfr. Тип
                                  AO6800
                                  Anlielectronics Тип

                                  		Alpha & Omega Semiconductor Inc.
                                  MOSFET 2N-CH 30V 3.4A 6-TSOP
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 - - - Surface Mount Surface Mount SC-74, SOT-457 - 6 - SILICON - 2 - -55°C~150°C TJ Tape & Reel (TR) - - - - Not For New Designs 1 (Unlimited) 6 EAR99 - - - - 1.15W - GULL WING NOT SPECIFIED - - - - NOT SPECIFIED - - - - - - - - - ENHANCEMENT MODE 1.15W - - - - 2 N-Channel (Dual) - SWITCHING 60m Ω @ 3.4A, 10V 1.5V @ 250μA - 235pF @ 15V 10nC @ 10V - - 30V - - - 3.4A - 12V - - - - - - - - 30V - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - - - ROHS3 Compliant -
                                    AO6800
                                    AO6800

                                    Alpha & Omega Semiconductor Inc.
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Diodes Incorporated DMC4050SSD-13
                                    Mfr. Тип
                                    DMC4050SSD-13
                                    Anlielectronics Тип

                                    		Diodes Incorporated
                                    MOSFET N/P-CH 40V 5.3A 8SO
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 17 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON 5.3A 2 24.29 ns -55°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) 8 EAR99 - Matte Tin (Sn) - annealed HIGH RELIABILITY - 2.14W DUAL GULL WING 260 - - - - 40 DMC4050 8 - - - - 2 - - ENHANCEMENT MODE 2.14W - 8.08 ns 1.8W - N and P-Channel - SWITCHING 45m Ω @ 3A, 10V 1.8V @ 250μA - 1790.8pF @ 20V 37.56nC @ 10V 15.14ns - 40V N-CHANNEL AND P-CHANNEL 5.27 ns - 5.8A - 20V - - - 0.06Ohm - - - - 40V - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 1.5mm 4.95mm 3.95mm - No No SVHC ROHS3 Compliant Lead Free
                                      DMC4050SSD-13
                                      DMC4050SSD-13

                                      Diodes Incorporated
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      STMicroelectronics STS8DNF3LL
                                      Mfr. Тип
                                      STS8DNF3LL
                                      Anlielectronics Тип

                                      		STMicroelectronics
                                      Trans MOSFET N-CH 30V 8A 8-Pin SO N T/R
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 - NRND (Last Updated: 8 months ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 4.535924g SILICON - 2 21 ns 150°C TJ Tape & Reel (TR) - STripFET™ II e4 - Not For New Designs 1 (Unlimited) 8 EAR99 20mOhm Nickel/Palladium/Gold (Ni/Pd/Au) - 30V 1.6W - GULL WING 260 - - - 8A 30 STS8DN 8 - - - - - - - ENHANCEMENT MODE 2W - 18 ns - - 2 N-Channel (Dual) - SWITCHING 20m Ω @ 4A, 10V 1V @ 250μA - 800pF @ 25V 17nC @ 5V 32ns - - - 11 ns - 8A - 16V - - 8A - 30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - 6.35mm 12.7mm 6.35mm - No - ROHS3 Compliant Lead Free
                                        STS8DNF3LL
                                        STS8DNF3LL

                                        STMicroelectronics
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        ON Semiconductor NVLJD4007NZTAG
                                        Mfr. Тип
                                        NVLJD4007NZTAG
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        MOSFET NFET WDFN6 30V 1.4 Ohms
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 2 Weeks ACTIVE (Last Updated: 1 week ago) - - Surface Mount 6-WDFN Exposed Pad YES 6 - - - 2 96 ns -55°C~150°C TJ Tape & Reel (TR) 2013 - e3 yes Active 1 (Unlimited) - EAR99 - Tin (Sn) - - 755mW - - - - - - - - - 6 - - - - - - Dual - 755mW - 9 ns - - 2 N-Channel (Dual) - - 7 Ω @ 125mA, 4.5V 1.5V @ 100μA Halogen Free 20pF @ 5V 0.75nC @ 4.5V 41ns - 30V - 72 ns - 245mA - 10V - - - - 30V - - - - - METAL-OXIDE SEMICONDUCTOR Logic Level Gate - - - - - - - No - ROHS3 Compliant Lead Free
                                          NVLJD4007NZTAG
                                          NVLJD4007NZTAG

                                          ON Semiconductor
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

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