[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature HTS Code Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Max Junction Temperature (Tj) FET Feature Drain to Source Resistance Rds On Max Nominal Vgs Feedback Cap-Max (Crss) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
Alpha & Omega Semiconductor Inc. AO4828
Mfr. Тип
AO4828
Anlielectronics Тип

Alpha & Omega Semiconductor Inc.
MOSFET 2N-CH 60V 4.5A 8-SOIC
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 18 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2005 - - - Active 1 (Unlimited) - - - - - - - - - - 2W - - - - - - - - - - - - - - - - - - - 2 N-Channel (Dual) - 56m Ω @ 4.5A, 10V 3V @ 250μA - 540pF @ 30V 10.5nC @ 10V - 60V - - - - - - - - - - - - - - - - Logic Level Gate - - - - - - - - - ROHS3 Compliant -
    AO4828
    AO4828

    Alpha & Omega Semiconductor Inc.
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    STMicroelectronics STS8C5H30L
    Mfr. Тип
    STS8C5H30L
    Anlielectronics Тип

    		STMicroelectronics
    Trans MOSFET N/P-CH 30V 8A/5.4A 8-Pin SO N T/R
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 - NRND (Last Updated: 8 months ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON 8A 5.4A 2 125 ns 150°C TJ Tape & Reel (TR) - STripFET™ III e3 - Active 1 (Unlimited) 8 - EAR99 22MOhm Matte Tin (Sn) - - - - - 2W DUAL GULL WING 260 - 8A 30 STS8C5 8 - - - - - - ENHANCEMENT MODE 2W - - - N and P-Channel SWITCHING 22m Ω @ 4A, 10V 1V @ 250μA - 857pF @ 25V 10nC @ 5V 35ns - N-CHANNEL AND P-CHANNEL 35 ns 8A 1.6V 16V - 8A - 30V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 1.25mm 5mm 4mm No No SVHC ROHS3 Compliant Lead Free
      STS8C5H30L
      STS8C5H30L

      STMicroelectronics
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      STMicroelectronics STL40DN3LLH5
      Mfr. Тип
      STL40DN3LLH5
      Anlielectronics Тип

      		STMicroelectronics
      MOSFET 2N-CH 30V 40A POWERFLAT56
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 14 Weeks ACTIVE (Last Updated: 7 months ago) - Surface Mount Surface Mount 8-PowerVDFN - 5 - - SILICON - 2 13 ns -55°C~175°C TJ Tape & Reel (TR) - STripFET™ V - - Active 1 (Unlimited) 6 - EAR99 18MOhm - - - - - - 60W - FLAT - - - - STL40 8 - R-PDSO-F6 - - - Dual ENHANCEMENT MODE 60W DRAIN 4 ns - 2 N-Channel (Dual) SWITCHING 18m Ω @ 5.5A, 10V 1.5V @ 250μA - 475pF @ 25V 4.5nC @ 4.5V 22ns 30V - 2.8 ns 40A 1.5V 22V - 11A - 30V 44A - - - - METAL-OXIDE SEMICONDUCTOR - Standard - - - - 850μm 4.75mm 5.75mm No No SVHC ROHS3 Compliant Lead Free
        STL40DN3LLH5
        STL40DN3LLH5

        STMicroelectronics
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor FDD3510H
        Mfr. Тип
        FDD3510H
        Anlielectronics Тип

        		ON Semiconductor
        MOSFET 80V Dual N & P-Chan PowerTrench
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 8 Weeks ACTIVE (Last Updated: 1 week ago) - Surface Mount Surface Mount TO-252-5, DPak (4 Leads + Tab), TO-252AD - - - 260.37mg SILICON 4.3A 2.8A 2 25 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e3 yes Active 1 (Unlimited) 4 - EAR99 80MOhm Tin (Sn) - - - - - 1.3W SINGLE GULL WING - - - - - - - R-PSSO-G4 - - - - ENHANCEMENT MODE 3.1W - - - N and P-Channel, Common Drain SWITCHING 80m Ω @ 4.3A, 10V 4V @ 250μA - 800pF @ 40V 18nC @ 10V 3ns - N-CHANNEL AND P-CHANNEL 5 ns 2.8A - 20V - 4.3A - 80V - - - - 37 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - No - ROHS3 Compliant Lead Free
          FDD3510H
          FDD3510H

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          ROHM Semiconductor EM6K6T2R
          Mfr. Тип
          EM6K6T2R
          Anlielectronics Тип

          		ROHM Semiconductor
          MOSFET 2N-CH 20V 0.3A EMT6
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 16 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 - - SILICON - 2 15 ns 150°C TJ Tape & Reel (TR) 2007 - e2 yes Active 1 (Unlimited) 6 - EAR99 - TIN COPPER - - - - - 150mW - FLAT 260 - - 10 *K6 6 - - - - - Dual ENHANCEMENT MODE 150mW - 5 ns - 2 N-Channel (Dual) SWITCHING 1 Ω @ 300mA, 4V 1V @ 1mA - 25pF @ 10V - 10ns 20V - 10 ns 300mA - 8V - 0.3A 1.4Ohm 20V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - No - ROHS3 Compliant Lead Free
            EM6K6T2R
            EM6K6T2R

            ROHM Semiconductor
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Diodes Incorporated ZXMHC10A07T8TA
            Mfr. Тип
            ZXMHC10A07T8TA
            Anlielectronics Тип

            		Diodes Incorporated
            MOSFET 2N/2P-CH 100V 1A/0.8A SM8
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 17 Weeks - - Surface Mount Surface Mount 8-SMD, Gull Wing - 8 - - SILICON 1A 800mA 4 5.9 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Active 1 (Unlimited) 8 - EAR99 1Ohm Matte Tin (Sn) - - - - - 1.3W DUAL - 260 - 1.4A 40 ZXMHC10A07T8 8 - - - - - - ENHANCEMENT MODE 1.3W - 1.6 ns - 2 N and 2 P-Channel (H-Bridge) SWITCHING 700m Ω @ 1.5A, 10V 4V @ 250μA - 138pF @ 60V 2.9nC @ 10V 2.1ns - N-CHANNEL AND P-CHANNEL 3.3 ns 1.1A - 20V - 1A - 100V - - - - - METAL-OXIDE SEMICONDUCTOR - Standard - - - - 1.6mm 6.7mm 3.7mm No No SVHC ROHS3 Compliant Lead Free
              ZXMHC10A07T8TA
              ZXMHC10A07T8TA

              Diodes Incorporated
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Nexperia USA Inc. PMGD780SN,115
              Mfr. Тип
              PMGD780SN,115
              Anlielectronics Тип

              		Nexperia USA Inc.
              NEXPERIA - PMGD780SN,115 - Dual-MOSFET, Zweifach n-Kanal, 300 mA, 60 V, 0.78 ohm, 10 V, 2 V
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 4 Weeks - - - Surface Mount 6-TSSOP, SC-88, SOT-363 YES 6 - - SILICON - 2 - -55°C~150°C TJ Tape & Reel (TR) 2010 TrenchMOS™ e3 - Active 1 (Unlimited) 6 - EAR99 - Tin (Sn) - - - 8541.29.00.75 - - - GULL WING 260 - - 30 - 6 - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE 410mW - - 410mW 2 N-Channel (Dual) SWITCHING 920m Ω @ 300mA, 10V 2.5V @ 250μA - 23pF @ 30V 1.05nC @ 10V - 60V - - 490mA - - - 0.49A 0.92Ohm - - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - No SVHC ROHS3 Compliant -
                PMGD780SN,115
                PMGD780SN,115

                Nexperia USA Inc.
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Infineon Technologies IPG20N06S4L14ATMA2
                Mfr. Тип
                IPG20N06S4L14ATMA2
                Anlielectronics Тип

                		Infineon Technologies
                MOSFET 2N-CH 8TDSON
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 12 Weeks - - Surface Mount Surface Mount 8-PowerVDFN - 8 - - SILICON - 2 40 ns -55°C~175°C TJ Tape & Reel (TR) 1997 Automotive, AEC-Q101, OptiMOS™ - yes Active 1 (Unlimited) 8 - - - - - - LOGIC LEVEL COMPATIBLE - - 50W - FLAT NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - - - 2 Dual ENHANCEMENT MODE 50W - 8 ns - 2 N-Channel (Dual) - 13.7m Ω @ 17A, 10V 2.2V @ 20μA Halogen Free 2890pF @ 25V 39nC @ 10V 2ns - - 15 ns 20A - 16V 60V - 0.0137Ohm 60V - - - - 90 mJ METAL-OXIDE SEMICONDUCTOR 175°C Logic Level Gate - - - - 1mm 5.15mm 6.15mm - - ROHS3 Compliant -
                  IPG20N06S4L14ATMA2
                  IPG20N06S4L14ATMA2

                  Infineon Technologies
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Diodes Incorporated DMN2004VK-7
                  Mfr. Тип
                  DMN2004VK-7
                  Anlielectronics Тип

                  		Diodes Incorporated
                  Trans MOSFET N-CH 20V 0.54A Automotive 6-Pin SOT-563 T/R
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 16 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 - 3.005049mg SILICON - 2 53.5 ns -55°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) 6 - EAR99 550mOhm Matte Tin (Sn) - - ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD - - 250mW - FLAT 260 - - 40 DMN2004VK 6 - - - - - Dual ENHANCEMENT MODE 250mW - 8 ns - 2 N-Channel (Dual) SWITCHING 550m Ω @ 540mA, 4.5V 1V @ 250μA - 150pF @ 16V - 13.3ns 20V - 36.1 ns 540mA - 8V - 0.54A - 20V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 600μm 1.6mm 1.2mm No No SVHC ROHS3 Compliant Lead Free
                    DMN2004VK-7
                    DMN2004VK-7

                    Diodes Incorporated
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies IPG20N06S2L65AATMA1
                    Mfr. Тип
                    IPG20N06S2L65AATMA1
                    Anlielectronics Тип

                    		Infineon Technologies
                    Trans MOSFET N-CH 55V 20A 8-Pin TDSON T/R
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 10 Weeks - - Surface Mount Surface Mount, Wettable Flank 8-PowerVDFN - 8 PG-TDSON-8-10 - - 20A 2 10 ns -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ - - Active 1 (Unlimited) - - - - - 175°C -55°C - - - 43W - - - - - - - - - - - - - - - 43W - 2 ns 43W 2 N-Channel (Dual) - 65mOhm @ 15A, 10V 2V @ 14μA Halogen Free 410pF @ 25V 12nC @ 10V 3ns 55V - 7 ns 20A - 20V 55V - - - - - 410pF - - - - Logic Level Gate 53mOhm 65 mΩ - - - - - - - ROHS3 Compliant Contains Lead
                      IPG20N06S2L65AATMA1
                      IPG20N06S2L65AATMA1

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Diodes Incorporated DMC2450UV-7
                      Mfr. Тип
                      DMC2450UV-7
                      Anlielectronics Тип

                      		Diodes Incorporated
                      MOSFET N/P-CH 20V SOT563
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 16 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - - - - SILICON 1.03A 700mA 2 - -55°C~150°C TJ Tape & Reel (TR) 2015 - e3 - Active 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - - 450mW DUAL FLAT 260 - - 30 - - AEC-Q101 R-PDSO-F6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - - N and P-Channel SWITCHING 480m Ω @ 200mA, 5V 900mV @ 250μA - 37.1pF @ 10V 0.5nC @ 4.5V - 20V N-CHANNEL AND P-CHANNEL - 1.03A - - - 0.74A 0.7Ohm - - - - 20V - METAL-OXIDE SEMICONDUCTOR - Standard - - - - - - - - - ROHS3 Compliant -
                        DMC2450UV-7
                        DMC2450UV-7

                        Diodes Incorporated
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Alpha & Omega Semiconductor Inc. AO4805
                        Mfr. Тип
                        AO4805
                        Anlielectronics Тип

                        		Alpha & Omega Semiconductor Inc.
                        MOSFET 2P-CH 30V 9A 8-SOIC
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 18 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - - - - - -55°C~150°C TJ Tape & Reel (TR) 2002 - - - Active 1 (Unlimited) - - - - - - - - - - 2W - - - - - - - - - - - - - - - - - - 2W 2 P-Channel (Dual) - 19m Ω @ 8A, 10V 2.8V @ 250μA - 2600pF @ 15V 39nC @ 10V - 30V - - 9A - - - - - - - - - - - - - Logic Level Gate - - - - - - - - - ROHS3 Compliant -
                          AO4805
                          AO4805

                          Alpha & Omega Semiconductor Inc.
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Infineon Technologies AUIRFN8459TR
                          Mfr. Тип
                          AUIRFN8459TR
                          Anlielectronics Тип

                          		Infineon Technologies
                          MOSFET 2N-CH 40V 50A 8PQFN
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 11 Weeks - - Surface Mount Surface Mount 8-PowerTDFN - 8 - - SILICON - 2 25 ns -55°C~175°C TJ Tape & Reel (TR) 2014 HEXFET® - - Active 1 (Unlimited) 6 - EAR99 4.8mOhm - - - ULTRA LOW RESISTANCE - - 50W - FLAT NOT SPECIFIED - - NOT SPECIFIED - - AEC-Q101 R-PDSO-F6 - - 2 Dual ENHANCEMENT MODE - DRAIN 10 ns - 2 N-Channel (Dual) SWITCHING 5.9m Ω @ 40A, 10V 3.9V @ 50μA - 2250pF @ 25V 60nC @ 10V 55ns 40V - 42 ns 50A - 20V - - - - - - - 40V 66 mJ METAL-OXIDE SEMICONDUCTOR - Standard - - - - - - - - - ROHS3 Compliant -
                            AUIRFN8459TR
                            AUIRFN8459TR

                            Infineon Technologies
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Diodes Incorporated DMC3016LSD-13
                            Mfr. Тип
                            DMC3016LSD-13
                            Anlielectronics Тип

                            		Diodes Incorporated
                            MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 23 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON 8.2A 6.2A 2 60.5 ns -55°C~150°C TJ Tape & Reel (TR) 2015 - e3 - Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - - 1.2W DUAL GULL WING 260 - - 30 - - AEC-Q101 - - - 2 - ENHANCEMENT MODE - - 9.7 ns - N and P-Channel SWITCHING 16m Ω @ 12A, 10V 2.3V @ 250μA - 1415pF @ 15V 25.1nC @ 10V 17.1ns - N-CHANNEL AND P-CHANNEL 40.4 ns 6.2A - 20V - - 0.016Ohm 30V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - - ROHS3 Compliant Lead Free
                              DMC3016LSD-13
                              DMC3016LSD-13

                              Diodes Incorporated
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              ON Semiconductor FDS6900AS
                              Mfr. Тип
                              FDS6900AS
                              Anlielectronics Тип

                              		ON Semiconductor
                              MOSFET Dual NCh PowerTrench
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 18 Weeks ACTIVE (Last Updated: 2 days ago) Tin Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 187mg SILICON 6.9A 8.2A 2 23 ns -55°C~150°C TJ Tape & Reel (TR) 2005 PowerTrench®, SyncFET™ e3 yes Active 1 (Unlimited) 8 SMD/SMT EAR99 27MOhm - - - - - 30V 2W - GULL WING NOT SPECIFIED - 8.2A NOT SPECIFIED - - - - Not Qualified - - Dual ENHANCEMENT MODE 2W - - 900mW 2 N-Channel (Dual) SWITCHING 27m Ω @ 6.9A, 10V 3V @ 250μA - 600pF @ 15V 15nC @ 10V 4ns - - 3 ns 8.2A 1.9V 20V - 6.9A - 30V - 30V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1.9 V - 1.5mm 5mm 3.99mm - No SVHC ROHS3 Compliant Lead Free
                                FDS6900AS
                                FDS6900AS

                                ON Semiconductor
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Diodes Incorporated DMG6301UDW-7
                                Mfr. Тип
                                DMG6301UDW-7
                                Anlielectronics Тип

                                		Diodes Incorporated
                                MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 15 Weeks - - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - - - 6.010099mg - - - 6.6 ns -55°C~150°C TJ Tape & Reel (TR) 2013 - e3 - Active 1 (Unlimited) - - EAR99 - Matte Tin (Sn) - - - - - 300mW - - 260 - - 30 DMG6301 - - - - - 2 Dual - - - 2.9 ns - 2 N-Channel (Dual) - 4 Ω @ 400mA, 4.5V 1.5V @ 250μA - 27.9pF @ 10V 0.36nC @ 4.5V 1.8ns 25V - 2.3 ns 240mA - 8V - - - - - - - - - - - Standard - - - - - - - - - ROHS3 Compliant -
                                  DMG6301UDW-7
                                  DMG6301UDW-7

                                  Diodes Incorporated
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor 2N7002VA
                                  Mfr. Тип
                                  2N7002VA
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  FET 60V 5.0 OHM SOT323
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 4 Weeks ACTIVE (Last Updated: 2 days ago) Tin Surface Mount Surface Mount SOT-563, SOT-666 - 6 - 32mg SILICON - 2 12.5 ns -55°C~150°C TJ Tape & Reel (TR) 2016 - e3 yes Active 1 (Unlimited) 6 - EAR99 - - - - - - - 250mW - FLAT - - - - - - - - - - - Dual ENHANCEMENT MODE 250mW - 5.85 ns - 2 N-Channel (Dual) SWITCHING 7.5 Ω @ 50mA, 5V 2.5V @ 250μA - 50pF @ 25V - - 60V - - 280mA - 20V - - - 60V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - 7 pF - - - No - ROHS3 Compliant -
                                    2N7002VA
                                    2N7002VA

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Diodes Incorporated DMN26D0UDJ-7
                                    Mfr. Тип
                                    DMN26D0UDJ-7
                                    Anlielectronics Тип

                                    		Diodes Incorporated
                                    MOSFET 2N-CH 20V 0.24A SOT963
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 15 Weeks - - Surface Mount Surface Mount SOT-963 - 6 - - SILICON - 2 13.4 ns -55°C~150°C TJ Cut Tape (CT) 2011 - e3 yes Active 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) - - ESD PROTECTION - - 300mW - FLAT 260 - - 40 DMN26D0UDJ 6 - - - - - - ENHANCEMENT MODE 300mW - 3.8 ns - 2 N-Channel (Dual) SWITCHING 3 Ω @ 100mA, 4.5V 1.05V @ 250μA - 14.1pF @ 15V - 7.9ns 20V - 15.2 ns 240mA - 10V - 0.18A 3Ohm - - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 450μm 1.05mm 850μm No No SVHC ROHS3 Compliant Lead Free
                                      DMN26D0UDJ-7
                                      DMN26D0UDJ-7

                                      Diodes Incorporated
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor FDPC8016S
                                      Mfr. Тип
                                      FDPC8016S
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      MOSFET 2N-CH 25V 8PWRCLIP
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 23 Weeks ACTIVE (Last Updated: 3 days ago) - Surface Mount Surface Mount 8-PowerWDFN - 8 - 207.7333mg SILICON 20A 35A 2 38 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e3 yes Active 1 (Unlimited) 8 - EAR99 - Tin (Sn) - - - - - 42W - NO LEAD NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - - - 2 Dual ENHANCEMENT MODE - DRAIN 13 ns 2.1W 2.3W 2 N-Channel (Dual) Asymmetrical SWITCHING 3.8m Ω @ 20A, 10V 2.5V @ 250μA - 2375pF @ 13V 35nC @ 10V 4ns - - 3 ns 100A - 12V - - - 25V 75A - - - 73 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 750μm 5.1mm 6.1mm - - ROHS3 Compliant -
                                        FDPC8016S
                                        FDPC8016S

                                        ON Semiconductor
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        ON Semiconductor EFC8811R-TF
                                        Mfr. Тип
                                        EFC8811R-TF
                                        Anlielectronics Тип

                                        		ON Semiconductor
                                        MOSFET 2N-CH 6CSP
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 4 Weeks ACTIVE (Last Updated: 4 days ago) - Surface Mount Surface Mount 6-SMD, No Lead - - - - - - - - 150°C TJ Tape & Reel (TR) 2016 - - yes Active 1 (Unlimited) - - - - - - - - - - 2.5W - - - - - - - - - - - - - - - - - - - 2 N-Channel (Dual) Common Drain - - - - - - - - - - - - - - - - - - - - - - - - Logic Level Gate, 2.5V Drive 2.3mOhm - - - - - - - - ROHS3 Compliant Lead Free
                                          EFC8811R-TF
                                          EFC8811R-TF

                                          ON Semiconductor
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: AO4828,STS8C5H30L,STL40DN3LLH5,FDD3510H,EM6K6T2R.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.