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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Weight | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Usage Level | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Additional Feature | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Output Voltage | Input Voltage-Nom | Supply Voltage-Max (Vsup) | Configuration | Number of Channels | Analog IC - Other Type | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Input Voltage (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Control Technique | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Switcher Configuration | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Input Characteristics | Max Dual Supply Voltage | Interface IC Type | Switching Frequency-Max | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Recovery Time | Max Junction Temperature (Tj) | FET Feature | Drain to Source Resistance | High Side Driver | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Thickness | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
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  | Mfr. ТипIRF9362PBFAnlielectronics Тип | Infineon Technologies |
MOSFET 2P-CH 30V 8A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | SILICON | 8A | 2 | 115 ns | - | -55°C~150°C TJ | Tube | 2004 | HEXFET® | - | - | Discontinued | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | 2W | - | GULL WING | - | - | - | - | - | - | - | IRF9362PBF | - | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 5.2 ns | - | 2 P-Channel (Dual) | SWITCHING | - | 21m Ω @ 8A, 10V | 2.4V @ 25μA | - | - | 1300pF @ 25V | 39nC @ 10V | 5.9ns | 30V | - | 53 ns | - | -8A | -1.8V | 20V | - | - | - | - | 8A | - | -30V | 64A | - | - | 94 mJ | METAL-OXIDE SEMICONDUCTOR | 48 ns | - | Logic Level Gate | - | - | -1.8 V | - | 1.4986mm | 4.9784mm | 3.9878mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRF9362PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMMDF1N05ER2GAnlielectronics Тип | ON Semiconductor |
MOSFET NFET SO8D 50V 200mA 300mOhm
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | OBSOLETE (Last Updated: 1 day ago) | - | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | - | SILICON | - | 2 | 40 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | - | e3 | yes | Obsolete | 1 (Unlimited) | 8 | - | EAR99 | 300MOhm | Tin (Sn) | LOGIC LEVEL COMPATIBLE | 50V | 2W | - | GULL WING | 260 | - | - | - | - | 1A | 40 | MMDF1N05E | 8 | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 20 ns | - | 2 N-Channel (Dual) | SWITCHING | - | 300m Ω @ 1.5A, 10V | 3V @ 250μA | - | - | 330pF @ 25V | 12.5nC @ 10V | 30ns | - | - | 25 ns | - | 2A | 3V | 20V | - | - | - | - | 2A | - | 50V | 10A | - | - | 300 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | 1.5mm | 5mm | 4mm | - | No | No SVHC | RoHS Compliant | Lead Free | ||
| MMDF1N05ER2G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDS8935Anlielectronics Тип | ON Semiconductor |
MOSFET -80V Dual P-Channel PowerTrench MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | ACTIVE (Last Updated: 6 days ago) | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 187mg | SILICON | - | 2 | 22 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | - | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | 3.1W | - | GULL WING | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 3.1W | - | 5 ns | 1.6W | 2 P-Channel (Dual) | SWITCHING | - | 183m Ω @ 2.1A, 10V | 3V @ 250μA | - | - | 879pF @ 40V | 19nC @ 10V | 3ns | 80V | - | 3 ns | - | 2.1A | -1.8V | 20V | - | - | - | - | - | - | -80V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | -1.8 V | 36 pF | 1.5mm | 4mm | 5mm | - | No | No SVHC | ROHS3 Compliant | - | ||
| FDS8935 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDC6506PAnlielectronics Тип | ON Semiconductor |
Trans MOSFET P-CH 30V 1.8A 6-Pin SuperSOT T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | 6 | 36mg | SILICON | - | 2 | 14 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | 170MOhm | - | LOGIC LEVEL COMPATIBLE | -30V | 960mW | - | GULL WING | - | - | - | - | - | -1.8A | - | - | - | - | - | - | - | - | - | - | 2 | - | Dual | ENHANCEMENT MODE | 960mW | - | 7 ns | 700mW | 2 P-Channel (Dual) | SWITCHING | - | 170m Ω @ 1.8A, 10V | 3V @ 250μA | - | - | 190pF @ 15V | 3.5nC @ 10V | 8ns | - | - | 8 ns | - | 1.8A | -1.8V | 20V | - | - | - | - | - | - | -30V | - | 30V | - | - | METAL-OXIDE SEMICONDUCTOR | - | 150°C | Logic Level Gate | - | - | - | - | 1.1mm | 3mm | 1.7mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDC6506P | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNVMFD5877NLWFT1GAnlielectronics Тип | ON Semiconductor |
Dual N-Channel Logic Level Power MOSFET 60V, 17A, 39mO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 4 days ago) | Tin | - | Surface Mount | 8-PowerTDFN | YES | 8 | - | SILICON | 6A | 2 | - | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | - | e3 | yes | Not For New Designs | 1 (Unlimited) | 6 | - | EAR99 | - | - | - | - | 3.2W | - | FLAT | - | - | - | - | - | - | - | - | 8 | AEC-Q101 | R-PDSO-F6 | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 3.2W | DRAIN | - | - | 2 N-Channel (Dual) | - | - | 39m Ω @ 7.5A, 10V | 3V @ 250μA | Halogen Free | - | 540pF @ 25V | 20nC @ 10V | - | 60V | - | - | - | 17A | - | 20V | - | - | - | - | 6A | 0.06Ohm | - | 74A | - | 60V | 40 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NVMFD5877NLWFT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMP2066LSD-13Anlielectronics Тип | Diodes Incorporated |
MOSFET 2P-CH 20V 5.8A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 850.995985mg | SILICON | - | 2 | 28 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | - | e3 | yes | Obsolete | 1 (Unlimited) | 8 | - | EAR99 | - | Matte Tin (Sn) | HIGH RELIABILITY | - | 2W | - | GULL WING | 260 | - | - | - | - | - | 40 | DMP2066LSD | 8 | - | - | - | - | - | - | - | - | - | - | ENHANCEMENT MODE | 2W | - | 4.4 ns | - | 2 P-Channel (Dual) | SWITCHING | - | 40m Ω @ 4.6A, 4.5V | 1.2V @ 250μA | - | - | 820pF @ 15V | 10.1nC @ 4.5V | 9.9ns | 20V | - | 23.4 ns | - | 5.8A | - | 12V | - | - | - | - | - | 0.04Ohm | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | 1.5mm | 5.3mm | 4.1mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMP2066LSD-13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBSO604NS2XUMA1Anlielectronics Тип | Infineon Technologies |
MOSFET 2N-CH 55V 5A 8DSO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | SILICON | - | 2 | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | OptiMOS™ | e3 | yes | Active | 3 (168 Hours) | 8 | - | EAR99 | - | - | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 55V | 2W | - | GULL WING | NOT SPECIFIED | - | - | - | - | 5A | NOT SPECIFIED | BSO604NS2 | 8 | - | - | Not Qualified | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | - | 2W | 2 N-Channel (Dual) | SWITCHING | - | 35m Ω @ 2.5A, 10V | 2V @ 30μA | Halogen Free | - | 870pF @ 25V | 26nC @ 10V | 8ns | - | - | - | - | 5A | - | 20V | - | 55V | - | - | 5A | 0.044Ohm | - | 20A | - | - | 90 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| BSO604NS2XUMA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXMC3A16DN8TCAnlielectronics Тип | Diodes Incorporated |
MOSFET Cmp 30V NP Ch UMOS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 73.992255mg | SILICON | 4.9A 4.1A | 2 | 21.6 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | 48mOhm | Matte Tin (Sn) | LOW THRESHOLD | 30V | 1.25W | DUAL | GULL WING | 260 | - | - | - | - | 6.4A | 40 | - | 8 | - | - | - | - | - | - | - | - | - | - | ENHANCEMENT MODE | 2.1W | - | 3 ns | - | N and P-Channel | SWITCHING | - | 35m Ω @ 9A, 10V | 1V @ 250μA (Min) | - | - | 796pF @ 25V | 17.5nC @ 10V | 6.4ns | - | N-CHANNEL AND P-CHANNEL | 9.4 ns | - | 4.1A | - | 20V | - | - | - | - | 4.9A | - | 30V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | 1.5mm | 5mm | 4mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| ZXMC3A16DN8TC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNVMFD5877NLT1GAnlielectronics Тип | ON Semiconductor |
MOSFET 16-128MHZ3.3VGPEMI
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 1 day ago) | - | - | Surface Mount | 8-PowerTDFN | YES | 8 | - | SILICON | 6A | 2 | 14.5 ns | - | -55°C~175°C TJ | Tape & Reel (TR) | 2006 | - | e3 | yes | Not For New Designs | 1 (Unlimited) | 6 | - | EAR99 | 39MOhm | Tin (Sn) | - | - | 3.2W | - | FLAT | - | - | - | - | - | - | - | - | 8 | - | R-PDSO-F6 | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 23W | DRAIN | 8.1 ns | - | 2 N-Channel (Dual) | SWITCHING | - | 39m Ω @ 7.5A, 10V | 3V @ 250μA | Halogen Free | - | 540pF @ 25V | 20nC @ 10V | - | - | - | - | - | 17A | 3V | 20V | - | - | - | - | 6A | - | 60V | 74A | - | - | 10.5 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | 1.05mm | 6.1mm | 5.1mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| NVMFD5877NLT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипCSD86330Q3DAnlielectronics Тип | Texas Instruments |
TEXAS INSTRUMENTS CSD86330Q3D Dual MOSFET, Dual N Channel, 20 A, 25 V, 4.6 ohm, 4.5 V, 1.4 V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | Tin | Surface Mount | Surface Mount | 8-PowerLDFN | - | 8 | - | - | - | - | 15.8 ns | Military grade | -55°C~150°C TJ | Tape & Reel (TR) | - | NexFET™ | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | 6W | - | - | 260 | 1 | 12V | 0.65mm | - | - | - | CSD86330 | 8 | - | - | - | - | - | 22V | - | - | - | Dual | - | 6W | - | 5.3 ns | - | 2 N-Channel (Half Bridge) | - | - | 9.6m Ω @ 14A, 8V | 2.1V @ 250μA | - | - | 920pF @ 12.5V | 6.2nC @ 4.5V | - | 25V | - | - | - | 20A | 1.4V | 8V | STANDARD | - | BUFFER OR INVERTER BASED MOSFET DRIVER | - | - | - | 25V | - | - | - | - | - | - | - | Logic Level Gate | - | NO | 1.4 V | - | 1.5mm | 3.3mm | 3.3mm | 1.5mm | No | No SVHC | ROHS3 Compliant | Contains Lead | ||
| CSD86330Q3D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDS89141Anlielectronics Тип | ON Semiconductor |
MOSFET 100V Dual N-Channel PowerTrench MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | ACTIVE (Last Updated: 6 days ago) | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 187mg | SILICON | - | 2 | 9.8 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | 62MOhm | Tin (Sn) | ULTRA-LOW RESISTANCE | - | 31W | - | GULL WING | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 31W | - | 5 ns | 1.6W | 2 N-Channel (Dual) | SWITCHING | - | 62m Ω @ 3.5A, 10V | 4V @ 250μA | - | - | 398pF @ 50V | 7.1nC @ 10V | 1.4ns | 100V | - | 2.2 ns | - | 3.5A | 3.1V | 20V | - | - | - | - | - | - | 100V | - | - | - | 37 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | 1.5mm | 4mm | 5mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDS89141 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDC6318PAnlielectronics Тип | ON Semiconductor |
Trans MOSFET P-CH 12V 2.5A 6-Pin SuperSOT T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | - | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | 6 | 36mg | SILICON | 2.5A | 2 | 21 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 90MOhm | Tin (Sn) | - | -12V | 960mW | - | GULL WING | - | - | - | - | - | -2.5A | - | - | - | - | - | - | - | - | - | - | 2 | - | Dual | ENHANCEMENT MODE | 960mW | - | 9 ns | 700mW | 2 P-Channel (Dual) | SWITCHING | - | 90m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | - | - | 455pF @ 6V | 8nC @ 4.5V | 14ns | - | - | 14 ns | - | -2.5A | -700mV | 8V | - | - | - | - | - | - | -12V | - | 12V | - | - | METAL-OXIDE SEMICONDUCTOR | - | 150°C | Logic Level Gate | - | - | 700 mV | - | 1.1mm | 3mm | 1.7mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDC6318P | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMN2004DMK-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CH 20V 0.54A SOT-26
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | SOT-23-6 | - | 6 | - | SILICON | - | 2 | - | - | -65°C~150°C TJ | Tape & Reel (TR) | 2011 | - | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Matte Tin (Sn) | HIGH RELIABILITY | 20V | 225mW | - | GULL WING | 260 | - | - | - | - | 540mA | 40 | DMN2004DMK | 6 | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 225mW | - | - | - | 2 N-Channel (Dual) | SWITCHING | - | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | - | - | 150pF @ 16V | - | - | - | - | - | - | 540mA | - | 8V | - | - | - | - | 0.54A | 0.55Ohm | 20V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | 1.1mm | 3mm | 1.6mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMN2004DMK-7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипCSD87352Q5DAnlielectronics Тип | Texas Instruments |
Synchronous Buck NexFET Power Block 8-Pin SON EP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | ACTIVE (Last Updated: 1 week ago) | - | Surface Mount | Surface Mount | 8-PowerLDFN | - | 8 | - | - | - | - | - | Military grade | -55°C~150°C TJ | Cut Tape (CT) | - | NexFET™ | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Matte Tin (Sn) | - | - | 8.5W | - | - | 260 | 1 | - | 1.27mm | - | - | - | CSD87352 | 8 | - | - | - | 1.3V | 12V | - | - | - | SWITCHING CONTROLLER | Dual | - | 8.5W | - | - | - | 2 N-Channel (Dual) | - | 27V | - | 1.15V @ 250μA | - | - | 1800pF @ 15V | 12.5nC @ 4.5V | 7ns | 30V | - | 2.7 ns | BUCK | 25A | - | 8V | - | - | - | - | - | - | 30V | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | 5mm | 6mm | 1.5mm | No | No SVHC | ROHS3 Compliant | Contains Lead | ||
| CSD87352Q5D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNVMFD5C446NLT1GAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 40V 145A S08FL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | - | - | Surface Mount | 8-PowerTDFN | - | - | - | - | 25A Ta 145A Tc | - | 34.9 ns | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | Active | 1 (Unlimited) | - | - | - | - | Tin (Sn) | - | - | - | - | - | NOT SPECIFIED | - | - | - | not_compliant | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | 14.8 ns | 3.5W Ta | 2 N-Channel (Dual) | - | - | 2.65m Ω @ 20A, 10V | 2.2V @ 90μA | - | - | 3170pF @ 25V | 25nC @ 4.5V | - | - | - | - | - | - | - | 20V | - | - | - | - | - | - | 40V | - | - | - | - | - | - | 175°C | Standard | - | - | - | - | 1.1mm | - | - | - | - | - | ROHS3 Compliant | - | ||
| NVMFD5C446NLT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMC3016LDV-7Anlielectronics Тип | Diodes Incorporated |
MOSFET BVDSS: 31V 40V POWERDI333
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 21 Weeks | - | - | - | Surface Mount | 8-PowerVDFN | - | - | - | - | 21A Tc 15A Tc | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | e3 | - | Active | 1 (Unlimited) | - | - | EAR99 | - | Matte Tin (Sn) | - | - | - | - | - | NOT SPECIFIED | - | - | - | - | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 900mW Ta | N and P-Channel Complementary | - | - | 12m Ω @ 7A, 10V, 25m Ω @ 7A, 10V | 2.4V @ 250μA | - | - | 1184pF @ 15V 1188pF @ 15V | 9.5nC @ 4.5V | - | 30V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMC3016LDV-7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDMG6968UDM-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CH 20V 6.5A SOT-26
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | - | - | Surface Mount | Surface Mount | SOT-23-6 | - | 6 | - | SILICON | - | 2 | 562 ns | - | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | - | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | 24mOhm | Matte Tin (Sn) | HIGH RELIABILITY | - | 850mW | - | GULL WING | 260 | - | - | - | - | - | 40 | DMG6968UDM | 6 | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 850mW | - | 53 ns | - | 2 N-Channel (Dual) Common Drain | - | - | 24m Ω @ 6.5A, 4.5V | 900mV @ 250μA | - | - | 143pF @ 10V | 8.8nC @ 4.5V | 78ns | 20V | - | 234 ns | - | 6.5A | - | 8V | - | - | - | - | - | - | 20V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | 1.1mm | 3mm | 1.6mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMG6968UDM-7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNVMFD5873NLT1GAnlielectronics Тип | ON Semiconductor |
Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level.
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 2 days ago) | - | - | Surface Mount | 8-PowerTDFN | YES | 8 | - | SILICON | - | 2 | - | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | - | e3 | yes | Not For New Designs | 1 (Unlimited) | 6 | - | EAR99 | - | Tin (Sn) | - | - | 3.1W | - | FLAT | - | - | - | - | - | - | - | - | 8 | AEC-Q101 | R-PDSO-F6 | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 3.1W | DRAIN | - | - | 2 N-Channel (Dual) | - | - | 13m Ω @ 15A, 10V | 2.5V @ 250μA | Halogen Free | - | 1560pF @ 25V | 30.5nC @ 10V | - | 60V | - | - | - | 10A | - | 20V | - | - | - | - | - | 0.013Ohm | 60V | 190A | - | - | 40 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NVMFD5873NLT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипECH8661-TL-HAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N/P-CH 30V 7A/5.5A 8-Pin ECH T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 2 Weeks | ACTIVE (Last Updated: 1 day ago) | - | - | Surface Mount | 8-SMD, Flat Lead | - | 8 | - | - | 7A 5.5A | 2 | 94 ns | - | 150°C TJ | Tape & Reel (TR) | 2010 | - | e6 | yes | Active | 1 (Unlimited) | - | - | EAR99 | - | Tin/Bismuth (Sn/Bi) | - | - | 1.5W | - | - | - | - | - | - | - | - | - | - | 8 | - | - | - | - | - | - | - | - | - | Dual | - | 1.5W | - | 13 ns | - | N and P-Channel | - | - | 24m Ω @ 3.5A, 10V | - | Halogen Free | - | 710pF @ 10V | 11.8nC @ 10V | 48ns | 30V | - | 36 ns | - | 5.5A | - | 20V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | 900μm | 2.9mm | 2.3mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| ECH8661-TL-H | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипCSD87355Q5DAnlielectronics Тип | Texas Instruments |
MOSFET 2N-CH 30V 8LSON
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | - | - | Surface Mount | 8-PowerLDFN | YES | 8 | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | - | NexFET™ | e4 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | 12W | - | NO LEAD | - | 1 | - | 1.27mm | not_compliant | - | - | CSD87355 | - | - | - | - | - | 12V | - | - | - | SWITCHING REGULATOR | - | - | - | - | - | - | 2 N-Channel (Dual) Asymmetrical | - | 27V | - | 1.9V @ 250μA | - | PULSE WIDTH MODULATION | 1860pF @ 15V | 13.7nC @ 4.5V | - | 30V | - | - | BUCK | 45A | 1.9V | - | - | - | - | 1500kHz | - | - | - | - | - | - | - | - | - | - | Standard | 3.9mOhm | - | - | - | - | 5mm | 6mm | 1.5mm | - | No SVHC | ROHS3 Compliant | Contains Lead | ||
| CSD87355Q5D |
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