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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
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[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage JEDEC-95 Code Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Max Junction Temperature (Tj) FET Feature Drain to Source Resistance Rds On Max Nominal Vgs Feedback Cap-Max (Crss) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor FDS8984-F085
Mfr. Тип
FDS8984-F085
Anlielectronics Тип

ON Semiconductor
MOSFET 2N-CH 30V 7A 8-SOIC
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 4 Weeks ACTIVE (Last Updated: 1 week ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 230.4mg SILICON - 2 42 ns -55°C~150°C TJ Tape & Reel (TR) 2001 Automotive, AEC-Q101, PowerTrench® - yes Active 1 (Unlimited) 8 - - - - - - - - 1.6W - GULL WING - - - - - - - - - - - Single ENHANCEMENT MODE 1.6W - 5 ns - 2 N-Channel (Dual) SWITCHING 23m Ω @ 7A, 10V 2.5V @ 250μA 635pF @ 15V 13nC @ 10V 9ns 30V - 21 ns 7A - - 20V - 7A - 30V 30A - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - No - ROHS3 Compliant -
    FDS8984-F085
    FDS8984-F085

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor NVJD4401NT1G
    Mfr. Тип
    NVJD4401NT1G
    Anlielectronics Тип

    		ON Semiconductor
    MOSFET NFET SC88 20V 630MA 375MO
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 4 Weeks ACTIVE (Last Updated: 3 days ago) - - Surface Mount 6-TSSOP, SC-88, SOT-363 YES 6 - - 630mA 2 786 ns -55°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) - - EAR99 - Tin (Sn) - - - - 270mW - - - - - - - 6 - - - - - Dual - 550mW - 83 ns - 2 N-Channel (Dual) - 375m Ω @ 630mA, 4.5V 1.5V @ 250μA 46pF @ 20V 3nC @ 4.5V 227ns - - 506 ns 910mA - - 12V - 0.91A - 20V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - No - ROHS3 Compliant Lead Free
      NVJD4401NT1G
      NVJD4401NT1G

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Infineon Technologies IPG20N04S408ATMA1
      Mfr. Тип
      IPG20N04S408ATMA1
      Anlielectronics Тип

      		Infineon Technologies
      MOSFET N-Channel 40V MOSFET
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 12 Weeks - - - Surface Mount 8-PowerVDFN YES - - SILICON 20A 2 - -55°C~175°C TJ Cut Tape (CT) 2010 OptiMOS™ e3 - Active 1 (Unlimited) 8 - EAR99 - Tin (Sn) - - - - - - FLAT NOT SPECIFIED not_compliant - NOT SPECIFIED - - - R-PDSO-F8 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 65W 2 N-Channel (Dual) - 7.6m Ω @ 17A, 10V 4V @ 30μA 2940pF @ 25V 36nC @ 10V - 40V - - - - - - - 20A 0.0076Ohm - 80A - - 40V 230 mJ METAL-OXIDE SEMICONDUCTOR - Standard - - - - - - - - - ROHS3 Compliant -
        IPG20N04S408ATMA1
        IPG20N04S408ATMA1

        Infineon Technologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Diodes Incorporated DMN601DWK-7
        Mfr. Тип
        DMN601DWK-7
        Anlielectronics Тип

        		Diodes Incorporated
        MOSFET Dual N-Channel
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 16 Weeks - Tin Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 6.010099mg SILICON - 2 - -65°C~150°C TJ Tape & Reel (TR) 2007 - e3 yes Active 1 (Unlimited) 6 SMD/SMT EAR99 2Ohm - - - LOW CAPACITANCE 60V 200mW - GULL WING 260 - 305mA 40 DMN601DWK 6 AEC-Q101 - - - 2 Dual ENHANCEMENT MODE 200mW - - - 2 N-Channel (Dual) SWITCHING 2 Ω @ 500mA, 10V 2.5V @ 1mA 50pF @ 25V - - - - - 305mA 1.6V - 20V - 0.305A - 60V - 60V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1.6 V 5 pF 1mm 2.2mm 1.35mm No No SVHC ROHS3 Compliant Lead Free
          DMN601DWK-7
          DMN601DWK-7

          Diodes Incorporated
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          ROHM Semiconductor UM6K31NTN
          Mfr. Тип
          UM6K31NTN
          Anlielectronics Тип

          		ROHM Semiconductor
          MOSFET 2N-CH 60V 0.25A UMT6
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 16 Weeks - - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 - SILICON - 2 18 ns 150°C TJ Tape & Reel (TR) 2007 - - yes Active 1 (Unlimited) 6 - EAR99 - - - - - - 150mW - GULL WING 260 - - 10 - 6 - - - - 2 - ENHANCEMENT MODE - - 3.5 ns - 2 N-Channel (Dual) SWITCHING 2.4 Ω @ 250mA, 10V 2.3V @ 1mA 15pF @ 25V - 5ns 60V - 28 ns 250mA - - 20V - - - 60V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate, 2.5V Drive - - - - - - - No - ROHS3 Compliant Lead Free
            UM6K31NTN
            UM6K31NTN

            ROHM Semiconductor
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Diodes Incorporated DMC2990UDJ-7
            Mfr. Тип
            DMC2990UDJ-7
            Anlielectronics Тип

            		Diodes Incorporated
            MOSFET N/P-CH 20V SOT963
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 16 Weeks - - Surface Mount Surface Mount SOT-963 - 6 - SILICON 450mA 310mA 2 31.1 ns -55°C~150°C TJ Tape & Reel (TR) 1999 - e3 yes Active 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - 350mW DUAL FLAT - - - - DMC2990 - AEC-Q101 - - - 2 - ENHANCEMENT MODE - - 5.8 ns - N and P-Channel SWITCHING 990m Ω @ 100mA, 4.5V 1V @ 250μA 27.6pF @ 15V 0.5nC @ 4.5V 5.7ns - N-CHANNEL AND P-CHANNEL 16.4 ns 310mA - - 8V - 0.31A 0.99Ohm 20V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 450μm 1.05mm 850μm No No SVHC ROHS3 Compliant Lead Free
              DMC2990UDJ-7
              DMC2990UDJ-7

              Diodes Incorporated
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Diodes Incorporated DMN2004DWK-7
              Mfr. Тип
              DMN2004DWK-7
              Anlielectronics Тип

              		Diodes Incorporated
              MOSFET Dual N-Channel
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 16 Weeks - - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 6.010099mg SILICON - 2 13.8 ns -65°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) 6 - EAR99 550mOhm Matte Tin (Sn) - - HIGH RELIABILITY 20V 200mW - GULL WING 260 - 540mA 40 DMN2004DWK 6 - - Not Qualified - - Dual ENHANCEMENT MODE 200mW - 4.1 ns - 2 N-Channel (Dual) SWITCHING 550m Ω @ 540mA, 4.5V 1V @ 250μA 150pF @ 16V - - - - - 540mA 1V - 8V - 0.54A - 20V - - - - - METAL-OXIDE SEMICONDUCTOR 150°C Logic Level Gate - - - - 1.1mm 2.2mm 1.35mm - No SVHC ROHS3 Compliant Lead Free
                DMN2004DWK-7
                DMN2004DWK-7

                Diodes Incorporated
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                ON Semiconductor FDMB3800N
                Mfr. Тип
                FDMB3800N
                Anlielectronics Тип

                		ON Semiconductor
                Trans MOSFET N-CH 30V 4.8A 8-Pin MLP EP T/R
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 23 Weeks ACTIVE (Last Updated: 4 days ago) - Surface Mount Surface Mount 8-PowerWDFN - 8 47mg SILICON - 2 21 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e4 yes Active 1 (Unlimited) 8 - EAR99 40MOhm Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) - - - - 1.6W - - - - - - - - - - - - - Dual ENHANCEMENT MODE 1.6W - 8 ns 750mW 2 N-Channel (Dual) SWITCHING 40m Ω @ 4.8A, 10V 3V @ 250μA 465pF @ 15V 5.6nC @ 5V 5ns 30V - 5 ns 4.8A 1.9V - 20V - - - 30V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1.9 V 60 pF 750μm 3mm 1.9mm No No SVHC ROHS3 Compliant Lead Free
                  FDMB3800N
                  FDMB3800N

                  ON Semiconductor
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor FDMS3600S
                  Mfr. Тип
                  FDMS3600S
                  Anlielectronics Тип

                  		ON Semiconductor
                  DUAL N CH MOSFET, POWERTRENCH, 25V, 40A, POWER56 - More Details
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 13 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount - - - 8 171mg - - 2 38 ns - Tape & Reel (TR) - - e3 yes Active 1 (Unlimited) 7 - EAR99 - Tin (Sn) 150°C -55°C - - 1W QUAD - - - - - - - - R-PQFP-N7 - - - Dual ENHANCEMENT MODE 2.5W DRAIN SOURCE - - - SWITCHING - - - - 5.3ns 25V N-CHANNEL 3.9 ns 30A - - 20V - 15A - 25V - - 1.68nF - - METAL-OXIDE SEMICONDUCTOR - - 1.6mOhm 5.6 mΩ 1.8 V 90 pF 1.05mm 5mm 6mm No No SVHC ROHS3 Compliant -
                    FDMS3600S
                    FDMS3600S

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    ON Semiconductor FDPC8012S
                    Mfr. Тип
                    FDPC8012S
                    Anlielectronics Тип

                    		ON Semiconductor
                    MOSF DL N CH ASYM 25V PWR CLIP33
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 12 Weeks ACTIVE (Last Updated: 3 days ago) - Surface Mount Surface Mount 8-PowerWDFN - 8 192mg SILICON 13A 26A 2 34 ns -55°C~150°C TJ Tape & Reel (TR) 2010 PowerTrench® e3 yes Active 1 (Unlimited) 8 - EAR99 - Tin (Sn) - - - - 2W - - - - - - - - - - - SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 800mW 900mW 2 N-Channel (Dual) Asymmetrical SWITCHING 7m Ω @ 12A, 4.5V 2.2V @ 250μA 1075pF @ 13V 8nC @ 4.5V 3ns - - 3 ns 88A - MO-240BA 12V - 13A 0.007Ohm 25V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 725μm 3.3mm 3.3mm No - ROHS3 Compliant -
                      FDPC8012S
                      FDPC8012S

                      ON Semiconductor
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ROHM Semiconductor EM6M2T2R
                      Mfr. Тип
                      EM6M2T2R
                      Anlielectronics Тип

                      		ROHM Semiconductor
                      MOSFET N/P-CH 20V 0.2A EMT6
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 16 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 - SILICON - 2 - 150°C TJ Tape & Reel (TR) 2009 - - yes Active 1 (Unlimited) 6 - EAR99 - - - - - - 150mW DUAL FLAT 260 - - 10 *M2 6 - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 150mW N and P-Channel SWITCHING 1 Ω @ 200mA, 4V 1V @ 1mA 25pF @ 10V - - 20V N-CHANNEL AND P-CHANNEL - 200mA - - - - 0.2A 1.4Ohm - - - - 20V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - No - ROHS3 Compliant Lead Free
                        EM6M2T2R
                        EM6M2T2R

                        ROHM Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Nexperia USA Inc. PMGD290UCEAX
                        Mfr. Тип
                        PMGD290UCEAX
                        Anlielectronics Тип

                        		Nexperia USA Inc.
                        MOSFET N/P-CH 20V 6TSSOP
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 4 Weeks - Tin - Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 - - 725mA 500mA - 80 ns -55°C~150°C TJ Tape & Reel (TR) 2014 - - - Active 1 (Unlimited) - - - - - - - - - 280mW - - - - - - - 6 - - - - 2 Dual - - - 18 ns - N and P-Channel - 380m Ω @ 500mA, 4.5V 1.3V @ 250μA 83pF @ 10V 0.68nC @ 4.5V 30ns - - 72 ns 500mA - - 8V - - - 20V - - - - - - - Logic Level Gate - - - - - - - No - ROHS3 Compliant -
                          PMGD290UCEAX
                          PMGD290UCEAX

                          Nexperia USA Inc.
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor NTMFD5C674NLT1G
                          Mfr. Тип
                          NTMFD5C674NLT1G
                          Anlielectronics Тип

                          		ON Semiconductor
                          T6 60V LL S08FL DS
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 48 Weeks ACTIVE (Last Updated: 5 days ago) - - Surface Mount 8-PowerTDFN - - - - 11A Ta 42A Tc - - -55°C~175°C TJ Tape & Reel (TR) - - e3 yes Active 1 (Unlimited) - - - - Tin (Sn) - - - - - - - NOT SPECIFIED - - NOT SPECIFIED - - - - - - - - - - - - 3W Ta 37W Tc 2 N-Channel (Dual) - 14.4m Ω @ 10A, 10V 2.2V @ 25μA 640pF @ 25V 10nC @ 10V - 60V - - - - - - - - - - - - - - - - - Standard - - - - - - - - - RoHS Compliant -
                            NTMFD5C674NLT1G
                            NTMFD5C674NLT1G

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor NTUD3169CZT5G
                            Mfr. Тип
                            NTUD3169CZT5G
                            Anlielectronics Тип

                            		ON Semiconductor
                            ON SEMICONDUCTOR - NTUD3169CZT5G - Dual MOSFET, Complementary N and P Channel, 20 V, 220 mA, 0.75 ohm, SOT-963, Surface Mount
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 8 Weeks ACTIVE (Last Updated: 5 days ago) Tin - Surface Mount SOT-963 YES 6 - SILICON 220mA 200mA 2 196 ns -55°C~150°C TJ Tape & Reel (TR) 2005 - e3 yes Active 1 (Unlimited) 6 - EAR99 - - - - - - 710mW - FLAT - - - - NTUD3169CZ 6 - - - - - Dual ENHANCEMENT MODE 200mW - 26 ns 125mW N and P-Channel SWITCHING 1.5 Ω @ 100mA, 4.5V 1V @ 250μA 12.5pF @ 15V - 46ns - N-CHANNEL AND P-CHANNEL 145 ns 280mA 1V - 8V - - - 20V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 400μm 1.05mm 850μm No No SVHC ROHS3 Compliant Lead Free
                              NTUD3169CZT5G
                              NTUD3169CZT5G

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Diodes Incorporated DMN2215UDM-7
                              Mfr. Тип
                              DMN2215UDM-7
                              Anlielectronics Тип

                              		Diodes Incorporated
                              MOSFET 2N-CH 20V 2A SOT-26
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 19 Weeks - Tin Surface Mount Surface Mount SOT-23-6 - 6 - SILICON - 2 19.6 ns -55°C~150°C TJ Tape & Reel (TR) 2008 - e3 yes Active 1 (Unlimited) 6 - EAR99 - - - - HIGH RELIABILITY - 650mW - GULL WING 260 - - 40 DMN2215UDM 6 - - Not Qualified - - Dual ENHANCEMENT MODE 650mW - 8 ns - 2 N-Channel (Dual) SWITCHING 100m Ω @ 2.5A, 4.5V 1V @ 250μA 188pF @ 10V - 3.8ns 20V - 3.8 ns 2A - - 12V - 2A 0.1Ohm 20V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 1.1mm 3mm 1.6mm - No SVHC ROHS3 Compliant Lead Free
                                DMN2215UDM-7
                                DMN2215UDM-7

                                Diodes Incorporated
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Infineon Technologies IRF9956PBF
                                Mfr. Тип
                                IRF9956PBF
                                Anlielectronics Тип

                                		Infineon Technologies
                                MOSFET 2N-CH 30V 3.5A 8-SOIC
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON - 2 13 ns -55°C~150°C TJ Tube 2003 HEXFET® - - Discontinued 1 (Unlimited) 8 - EAR99 100mOhm - - - AVALANCHE RATED, HIGH RELIABILITY 30V 2W - GULL WING - - 3.5A - IRF9956PBF - - - - - - Dual ENHANCEMENT MODE 2W - 6.2 ns - 2 N-Channel (Dual) SWITCHING 100m Ω @ 2.2A, 10V 1V @ 250μA 190pF @ 15V 14nC @ 10V 8.8ns - - 3 ns 3.5A 1V - 20V - - - 30V 16A - - - 44 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1 V - 1.5mm 5mm 4.05mm No No SVHC ROHS3 Compliant Lead Free
                                  IRF9956PBF
                                  IRF9956PBF

                                  Infineon Technologies
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Diodes Incorporated DMC4015SSD-13
                                  Mfr. Тип
                                  DMC4015SSD-13
                                  Anlielectronics Тип

                                  		Diodes Incorporated
                                  MOSFET N/P-CH 40V 8.6A/6.5A 8-SO
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 23 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON 8.6A 6.2A 2 - -55°C~150°C TJ Tape & Reel (TR) 2014 - e3 - Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - - - 1.2W DUAL GULL WING NOT SPECIFIED - - NOT SPECIFIED - - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - - N and P-Channel SWITCHING 15m Ω @ 3A, 10V 3V @ 250μA 1810pF @ 20V 40nC @ 10V - 40V N-CHANNEL AND P-CHANNEL - 6.2A - - - - - 0.02Ohm - - - - 40V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - - ROHS3 Compliant -
                                    DMC4015SSD-13
                                    DMC4015SSD-13

                                    Diodes Incorporated
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Diodes Incorporated DMN32D2LDF-7
                                    Mfr. Тип
                                    DMN32D2LDF-7
                                    Anlielectronics Тип

                                    		Diodes Incorporated
                                    MOSFET 2N-CH 30V 400MA SOT353
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 16 Weeks - - Surface Mount Surface Mount 5-TSSOP, SC-70-5, SOT-353 - 5 - SILICON - 2 - -55°C~150°C TJ Tape & Reel (TR) 2008 - e3 yes Active 1 (Unlimited) 5 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - 280mW - GULL WING 260 - - 40 - 5 - - - - 2 - ENHANCEMENT MODE - - - - 2 N-Channel (Dual) Common Source SWITCHING 1.2 Ω @ 100mA, 4V 1.2V @ 250μA 39pF @ 3V - - 30V - - 400mA - - 10V - 0.4A - 30V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 1mm 2.2mm 1.35mm No No SVHC ROHS3 Compliant -
                                      DMN32D2LDF-7
                                      DMN32D2LDF-7

                                      Diodes Incorporated
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor FDMS9620S
                                      Mfr. Тип
                                      FDMS9620S
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      MOSFET 30V Dual N-Ch PowerTrenchAr MOSFET
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 16 Weeks ACTIVE (Last Updated: 4 days ago) - Surface Mount Surface Mount 8-PowerWDFN - 8 228mg SILICON 7.5A 10A 2 27 ns -55°C~150°C TJ Tape & Reel (TR) 2007 PowerTrench® e4 yes Active 1 (Unlimited) 8 - EAR99 32MOhm Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) - - - - 2.5W - - - - - - - - - - - - - Dual ENHANCEMENT MODE 2.5W DRAIN - 1W 2 N-Channel (Dual) SWITCHING 21.5m Ω @ 7.5A, 10V 3V @ 250μA 665pF @ 15V 14nC @ 10V 13ns - - 7 ns 10A 1.6V - 20V - 7.5A - 30V 60A - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 750μm 5mm 6mm No No SVHC ROHS3 Compliant Lead Free
                                        FDMS9620S
                                        FDMS9620S

                                        ON Semiconductor
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Nexperia USA Inc. 2N7002PV,115
                                        Mfr. Тип
                                        2N7002PV,115
                                        Anlielectronics Тип

                                        		Nexperia USA Inc.
                                        Dual N-Channel 60 V 330 mW 0.8 nC Silicon Surface Mount Mosfet - SOT-666
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 4 Weeks - Tin - Surface Mount SOT-563, SOT-666 YES 6 - SILICON - 2 10 ns 150°C TJ Tape & Reel (TR) 2010 - e3 - Active 1 (Unlimited) 6 - - - - - - LOGIC LEVEL COMPATIBLE - 330mW - FLAT - - - - - 6 - - - - - - ENHANCEMENT MODE 390mW - 3 ns 330mW 2 N-Channel (Dual) SWITCHING 1.6 Ω @ 500mA, 10V 2.4V @ 250μA 50pF @ 10V 0.8nC @ 4.5V 4ns - - 5 ns 350mA - - 20V 60V 0.35A - - - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - No - ROHS3 Compliant Lead Free
                                          2N7002PV,115
                                          2N7002PV,115

                                          Nexperia USA Inc.
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

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