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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Qualification Status Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Power Dissipation-Max (Abs) Max Junction Temperature (Tj) FET Feature Nominal Vgs Feedback Cap-Max (Crss) Height Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor FDS9953A
Mfr. Тип
FDS9953A
Anlielectronics Тип

ON Semiconductor
MOSFET 2P-CH 30V 2.9A 8SOIC
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 10 Weeks ACTIVE (Last Updated: 1 week ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 230.4mg SILICON 2.9A 2 11 ns -55°C~150°C TJ Tape & Reel (TR) 2001 PowerTrench® e3 yes Active 1 (Unlimited) 8 - EAR99 130MOhm Tin (Sn) - -30V 2W - GULL WING - - -2.9A - - - - - - - Dual ENHANCEMENT MODE 2W - 4.5 ns 900mW 2 P-Channel (Dual) SWITCHING 130m Ω @ 1A, 10V 3V @ 250μA - 185pF @ 15V 3.5nC @ 10V 13ns 30V - 2 ns 2.9mA -1.8V 25V - - - -30V 10A - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate 1.8 V - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
    FDS9953A
    FDS9953A

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Infineon Technologies IPG16N10S461ATMA1
    Mfr. Тип
    IPG16N10S461ATMA1
    Anlielectronics Тип

    		Infineon Technologies
    Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 12 Weeks - - Surface Mount Surface Mount 8-PowerVDFN - 8 - SILICON - 2 5 ns -55°C~175°C TJ Tape & Reel (TR) 2011 Automotive, AEC-Q101, OptiMOS™ e3 - Active 1 (Unlimited) 6 - EAR99 - Tin (Sn) - - 29W - FLAT - not_compliant - - - 8 R-PDSO-F6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - DRAIN 3 ns 29W 2 N-Channel (Dual) - 61m Ω @ 16A, 10V 3.5V @ 9μA Halogen Free 490pF @ 25V 7nC @ 10V 1ns - - - 16A - 20V 100V - 0.061Ohm - 64A - - 33 mJ METAL-OXIDE SEMICONDUCTOR - - Standard - 20 pF - - - - - - ROHS3 Compliant Contains Lead
      IPG16N10S461ATMA1
      IPG16N10S461ATMA1

      Infineon Technologies
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ON Semiconductor NTJD4105CT2G
      Mfr. Тип
      NTJD4105CT2G
      Anlielectronics Тип

      		ON Semiconductor
      MOSFET N/P-CH 20V/8V SOT-363
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 8 Weeks ACTIVE (Last Updated: 6 days ago) - - Surface Mount 6-TSSOP, SC-88, SOT-363 YES 6 - SILICON 630mA 775mA 2 50 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Active 1 (Unlimited) 6 - EAR99 220mOhm Tin (Sn) - - 270mW - GULL WING 260 - 630mA 40 NTJD4105C 6 - - - - Dual ENHANCEMENT MODE 270mW - - - N and P-Channel SWITCHING 375m Ω @ 630mA, 4.5V 1.5V @ 250μA - 46pF @ 20V 3nC @ 4.5V 23ns 20V 8V N-CHANNEL AND P-CHANNEL 36 ns 775mA - 8V - 1.1A - -8V - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - 5 pF - - - - No - ROHS3 Compliant Lead Free
        NTJD4105CT2G
        NTJD4105CT2G

        ON Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor NVMFD5C462NLT1G
        Mfr. Тип
        NVMFD5C462NLT1G
        Anlielectronics Тип

        		ON Semiconductor
        MOSFET 2N-CH 40V 84A S08FL
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 48 Weeks ACTIVE (Last Updated: 3 days ago) - - Surface Mount 8-PowerTDFN YES - - SILICON 18A Ta 84A Tc 2 - -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) 6 - - - Tin (Sn) - - - - FLAT - not_compliant - - - - R-PDSO-F6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - DRAIN - 3W Ta 50W Tc 2 N-Channel (Dual) - 4.7m Ω @ 10A, 10V 2.2V @ 40μA - 1300pF @ 25V 11nC @ 4.5V - 40V - - - - - - - 0.0077Ohm - 311A - 40V 174 mJ METAL-OXIDE SEMICONDUCTOR 50W - Standard - - - - - - - - ROHS3 Compliant -
          NVMFD5C462NLT1G
          NVMFD5C462NLT1G

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Infineon Technologies BSO211PHXUMA1
          Mfr. Тип
          BSO211PHXUMA1
          Anlielectronics Тип

          		Infineon Technologies
          Trans MOSFET P-CH 20V 4A Automotive 8-Pin DSO T/R
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 12 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 540.001716mg SILICON - 2 - -55°C~150°C TJ Tape & Reel (TR) 2011 OptiMOS™ e3 yes Obsolete 3 (168 Hours) 8 - EAR99 - Tin (Sn) LOGIC LEVEL COMPATIBLE - 1.6W - GULL WING NOT SPECIFIED - - NOT SPECIFIED BSO211 8 - Not Qualified - - - ENHANCEMENT MODE 1.6W - - - 2 P-Channel (Dual) - 67m Ω @ 4.6A, 4.5V 1.2V @ 25μA Halogen Free 1095pF @ 15V 10nC @ 4.5V 13ns 20V - - 4A - 12V -20V - 0.067Ohm - - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - - - ROHS3 Compliant Lead Free
            BSO211PHXUMA1
            BSO211PHXUMA1

            Infineon Technologies
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor ECH8660-TL-H
            Mfr. Тип
            ECH8660-TL-H
            Anlielectronics Тип

            		ON Semiconductor
            Trans MOSFET N/P-CH 30V 4.5A 8-Pin ECH T/R
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 33 Weeks ACTIVE (Last Updated: 1 day ago) - - Surface Mount 8-SMD, Flat Lead - 8 - - - - 45 ns 150°C TJ Tape & Reel (TR) 2010 - e6 yes Active 1 (Unlimited) - - EAR99 - Tin/Bismuth (Sn/Bi) - - 1.5W - - - - - - - 8 - - - - Dual - - - - - N and P-Channel - 59m Ω @ 2A, 10V - Halogen Free 240pF @ 10V 4.4nC @ 10V - 30V - - 4.5A - 20V - - - - - - - - - - - Logic Level Gate - - 900μm 2.9mm 2.3mm - No - ROHS3 Compliant Lead Free
              ECH8660-TL-H
              ECH8660-TL-H

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Infineon Technologies IRFH7911TRPBF
              Mfr. Тип
              IRFH7911TRPBF
              Anlielectronics Тип

              		Infineon Technologies
              MOSFET 2N-CH 30V 13A/28A PQFN
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 39 Weeks - - Surface Mount Surface Mount 18-PowerVQFN - 18 - SILICON 13A 28A 2 - -55°C~150°C TJ Tape & Reel (TR) 2011 HEXFET® e3 - Not For New Designs 2 (1 Year) 6 - EAR99 8.6MOhm Matte Tin (Sn) HIGH RELIABILITY - 3.4W QUAD NO LEAD 260 - - 30 IRFH7911PBF - R-PQFP-N6 Not Qualified - - Dual ENHANCEMENT MODE 2.4W DRAIN SOURCE - 2.4W 3.4W 2 N-Channel (Dual) SWITCHING 8.6m Ω @ 12A, 10V 2.35V @ 25μA - 1060pF @ 15V 12nC @ 4.5V - - - - 13A - 20V - - - 30V 100A - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate 2.35 V - 939.8μm 5.9944mm 5mm - - No SVHC ROHS3 Compliant Lead Free
                IRFH7911TRPBF
                IRFH7911TRPBF

                Infineon Technologies
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                ON Semiconductor FDS9933A
                Mfr. Тип
                FDS9933A
                Anlielectronics Тип

                		ON Semiconductor
                MOSFET 2P-CH 20V 3.8A 8SOIC
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 10 Weeks ACTIVE (Last Updated: 1 week ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 187mg SILICON - 2 31 ns -55°C~150°C TJ Tape & Reel (TR) 1998 PowerTrench® e3 yes Active 1 (Unlimited) 8 SMD/SMT EAR99 75MOhm Tin (Sn) - -20V 2W - GULL WING - - -3.8A - - - - - - - Dual ENHANCEMENT MODE 2W - 6 ns 900mW 2 P-Channel (Dual) SWITCHING 75m Ω @ 3.8A, 4.5V 1.5V @ 250μA - 600pF @ 10V 10nC @ 4.5V 9ns 20V - 28 ns 3.8A -800mV 8V - - - -20V - -20V - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate -800 mV - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                  FDS9933A
                  FDS9933A

                  ON Semiconductor
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  ON Semiconductor NVMFD5C466NLT1G
                  Mfr. Тип
                  NVMFD5C466NLT1G
                  Anlielectronics Тип

                  		ON Semiconductor
                  NVMFD5C466NLT1G Dual N-Channel MOSFET, 52 A, 40 V NVMFD5C466NL, 8-Pin DFN ON Semiconductor
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 48 Weeks ACTIVE (Last Updated: 3 days ago) - - Surface Mount 8-PowerTDFN - - - - 14A Ta 52A Tc - - -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) - - - - Tin (Sn) - - - - - NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - - - - - - - - 3W Ta 40W Tc 2 N-Channel (Dual) - 7.4m Ω @ 10A, 10V 2.2V @ 30μA - 997pF @ 25V 7nC @ 4.5V - 40V - - - - - - - - - - - - - - - - Standard - - - - - - - - ROHS3 Compliant -
                    NVMFD5C466NLT1G
                    NVMFD5C466NLT1G

                    ON Semiconductor
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies BSL316CH6327XTSA1
                    Mfr. Тип
                    BSL316CH6327XTSA1
                    Anlielectronics Тип

                    		Infineon Technologies
                    MOSFET N/P-CH 30V 1.4A/1.5A TSOP
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 10 Weeks - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 - SILICON 1.4A 1.5A 2 - -55°C~150°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ e3 - Active 1 (Unlimited) 6 - EAR99 - Tin (Sn) AVALANCHE RATED - 500mW DUAL GULL WING NOT SPECIFIED - - NOT SPECIFIED - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - - N and P-Channel Complementary - 160m Ω @ 1.4A, 10V 2V @ 3.7μA Halogen Free 282pF @ 15V 0.6nC @ 5V - 30V N-CHANNEL AND P-CHANNEL - 1.5A 1.6V 20V -30V 1.4A - - - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate, 4.5V Drive - 7 pF - - - - - No SVHC ROHS3 Compliant Lead Free
                      BSL316CH6327XTSA1
                      BSL316CH6327XTSA1

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ON Semiconductor FDC6304P
                      Mfr. Тип
                      FDC6304P
                      Anlielectronics Тип

                      		ON Semiconductor
                      MOSFET 2P-CH 25V 0.46A SSOT-6
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 10 Weeks ACTIVE (Last Updated: 1 day ago) - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 36mg SILICON 460mA 2 55 ns -55°C~150°C TJ Tape & Reel (TR) - - e3 yes Active 1 (Unlimited) 6 - EAR99 1.1Ohm Tin (Sn) - -25V 700mW - GULL WING - - -460mA - - - - - - - Dual ENHANCEMENT MODE 900mW - 7 ns - 2 P-Channel (Dual) SWITCHING 1.1 Ω @ 500mA, 4.5V 1.5V @ 250μA - 62pF @ 10V 1.5nC @ 4.5V 8ns 25V - 8 ns -460mA -860mV 8V - - - -25V - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - No No SVHC ROHS3 Compliant Lead Free
                        FDC6304P
                        FDC6304P

                        ON Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Infineon Technologies IRF7910PBF
                        Mfr. Тип
                        IRF7910PBF
                        Anlielectronics Тип

                        		Infineon Technologies
                        MOSFET 2N-CH 12V 10A 8-SOIC
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 - - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON - 2 16 ns -55°C~150°C TJ Tube 2004 HEXFET® - - Discontinued 1 (Unlimited) 8 SMD/SMT EAR99 - - - 12V 2W - GULL WING - - 10A - IRF7910PBF - - - - - Dual ENHANCEMENT MODE 2W - 9.4 ns - 2 N-Channel (Dual) SWITCHING 15m Ω @ 8A, 4.5V 2V @ 250μA - 1730pF @ 6V 26nC @ 4.5V 22ns - - 6.3 ns 10A 2V 12V - - 0.015Ohm 12V - 12V - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate 2 V - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                          IRF7910PBF
                          IRF7910PBF

                          Infineon Technologies
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Texas Instruments CSD88539ND
                          Mfr. Тип
                          CSD88539ND
                          Anlielectronics Тип

                          		Texas Instruments
                          MOSFET 2N-CH 60V 15A 8SOIC
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 6 Weeks ACTIVE (Last Updated: 4 days ago) Gold Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 540.001716mg SILICON - 2 5 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e4 yes Active 1 (Unlimited) 8 - EAR99 - - AVALANCHE RATED - 2.1W - GULL WING 260 - - - CSD88539 - - - - - Dual ENHANCEMENT MODE 2.1W - 6 ns - 2 N-Channel (Dual) SWITCHING 28m Ω @ 5A, 10V 3.6V @ 250μA - 741pF @ 30V 9.4nC @ 10V 9ns 60V - 4 ns 15A 3V 20V - 6.3A 0.034Ohm 60V 46A - - - METAL-OXIDE SEMICONDUCTOR - - Standard - - 1.75mm 4.9mm 3.91mm 1.58mm No No SVHC ROHS3 Compliant Lead Free
                            CSD88539ND
                            CSD88539ND

                            Texas Instruments
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Infineon Technologies AUIRF7343QTR
                            Mfr. Тип
                            AUIRF7343QTR
                            Anlielectronics Тип

                            		Infineon Technologies
                            MOSFET N/P-CH 55V 4.7/3.4A 8SOIC
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 26 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON 4.7A 3.4A 2 - -55°C~150°C TJ Tape & Reel (TR) 2011 HEXFET® e3 - Not For New Designs 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE - 2W - GULL WING - - - - - - - - - - Dual ENHANCEMENT MODE 2W - - - N and P-Channel SWITCHING 50m Ω @ 4.7A, 10V 1V @ 250μA - 740pF @ 25V 36nC @ 10V - - N-CHANNEL AND P-CHANNEL - 3.4A 1V 20V - 4.7A 0.05Ohm 55V - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate 1 V - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                              AUIRF7343QTR
                              AUIRF7343QTR

                              Infineon Technologies
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies BSC0921NDIATMA1
                              Mfr. Тип
                              BSC0921NDIATMA1
                              Anlielectronics Тип

                              		Infineon Technologies
                              MOSFET 2N-CH 30V 17A/31A TISON8
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 18 Weeks - Tin Surface Mount Surface Mount 8-PowerTDFN - 8 - - 17A 31A - - -55°C~150°C TJ Tape & Reel (TR) 2013 OptiMOS™ e3 no Active 1 (Unlimited) - - EAR99 - - - - 1W - - NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - - - - - - - - - 2 N-Channel (Dual) Asymmetrical - 5m Ω @ 20A, 10V 2V @ 250μA - 1025pF @ 15V 8.9nC @ 4.5V - 30V - - 31A - 20V - - - - - - - - - - - Logic Level Gate, 4.5V Drive - - - - - - - - ROHS3 Compliant -
                                BSC0921NDIATMA1
                                BSC0921NDIATMA1

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Nexperia USA Inc. BSS138PS,115
                                Mfr. Тип
                                BSS138PS,115
                                Anlielectronics Тип

                                		Nexperia USA Inc.
                                MOSFET 2N-CH 60V 0.32A 6TSSOP
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 4 Weeks - Tin - Surface Mount 6-TSSOP, SC-88, SOT-363 YES 6 - SILICON - 2 9 ns 150°C TJ Tape & Reel (TR) 2010 Automotive, AEC-Q101, TrenchMOS™ e3 - Active 1 (Unlimited) 6 - EAR99 1.6Ohm - LOGIC LEVEL COMPATIBLE - 420mW - GULL WING 260 - - 30 - 6 - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE 280mW - 2 ns 420mW 2 N-Channel (Dual) SWITCHING 1.6 Ω @ 300mA, 10V 1.5V @ 250μA - 50pF @ 10V 0.8nC @ 4.5V 3ns - - 4 ns 320mA 1.2V 20V 60V 0.32A - 60V - - - - METAL-OXIDE SEMICONDUCTOR - - Logic Level Gate - - - - - - No No SVHC ROHS3 Compliant Lead Free
                                  BSS138PS,115
                                  BSS138PS,115

                                  Nexperia USA Inc.
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Diodes Incorporated DMC1028UFDB-7
                                  Mfr. Тип
                                  DMC1028UFDB-7
                                  Anlielectronics Тип

                                  		Diodes Incorporated
                                  MOSFET N/P-CH 12V/20V 6UDFN
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 15 Weeks - - Surface Mount Surface Mount 6-UDFN Exposed Pad - - - SILICON 6A 3.4A 2 - -55°C~150°C TJ Tape & Reel (TR) 2015 - e4 - Active 1 (Unlimited) 6 - EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) - - 1.36W DUAL NO LEAD NOT SPECIFIED - - NOT SPECIFIED - - S-PDSO-N6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - DRAIN - - N and P-Channel SWITCHING 25m Ω @ 5.2A, 4.5V 1V @ 250μA - 787pF @ 6V 18.5nC @ 8V - 12V 20V N-CHANNEL AND P-CHANNEL - 3.4A - - - 6A 0.025Ohm - - - 12V - METAL-OXIDE SEMICONDUCTOR - - Standard - - - - - - - - ROHS3 Compliant -
                                    DMC1028UFDB-7
                                    DMC1028UFDB-7

                                    Diodes Incorporated
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Infineon Technologies IPG20N04S412AATMA1
                                    Mfr. Тип
                                    IPG20N04S412AATMA1
                                    Anlielectronics Тип

                                    		Infineon Technologies
                                    MOSFET 2N-CH 8TDSON
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 12 Weeks - - Surface Mount Surface Mount, Wettable Flank 8-PowerVDFN - 8 - - - - - -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ e3 - Active 1 (Unlimited) - - EAR99 - Tin (Sn) - - 41W - - NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - - - - - - - - - 2 N-Channel (Dual) - 12.2m Ω @ 17A, 10V 4V @ 15μA Halogen Free 1470pF @ 25V 18nC @ 10V - 40V - - 20A - - 40V - - - - - - - - - - Standard - - - - - - - - ROHS3 Compliant Contains Lead
                                      IPG20N04S412AATMA1
                                      IPG20N04S412AATMA1

                                      Infineon Technologies
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor NVMFD5C672NLT1G
                                      Mfr. Тип
                                      NVMFD5C672NLT1G
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      MOSFET 2N-CH 60V 49A S08FL
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 48 Weeks ACTIVE (Last Updated: 3 days ago) - - Surface Mount 8-PowerTDFN YES - - SILICON 12A Ta 49A Tc 2 22 ns -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) 6 - - - Tin (Sn) - - - - FLAT 260 not_compliant - 30 - - R-PDSO-F6 - - 2 - ENHANCEMENT MODE 3.1W DRAIN 11 ns 3.1W Ta 45W Tc 2 N-Channel (Dual) - 11.9m Ω @ 10A, 10V 2.2V @ 30μA - 793pF @ 25V 5.7nC @ 4.5V - - - - 11A - 20V - - 0.0168Ohm 60V 146A - - 66 mJ METAL-OXIDE SEMICONDUCTOR - 175°C Standard - - 1.1mm - - - - - ROHS3 Compliant -
                                        NVMFD5C672NLT1G
                                        NVMFD5C672NLT1G

                                        ON Semiconductor
                                        RoHS :
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                                        Infineon Technologies IPG20N06S415ATMA2
                                        Mfr. Тип
                                        IPG20N06S415ATMA2
                                        Anlielectronics Тип

                                        		Infineon Technologies
                                        MOSFET 2N-CH 8TDSON
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 12 Weeks - - Surface Mount Surface Mount 8-PowerVDFN - 8 - SILICON - 2 17 ns -55°C~175°C TJ Tape & Reel (TR) 2005 Automotive, AEC-Q101, OptiMOS™ - yes Active 1 (Unlimited) 8 - - - - - - 50W - FLAT NOT SPECIFIED not_compliant - NOT SPECIFIED - - - - - - Dual ENHANCEMENT MODE 50W - 12 ns - 2 N-Channel (Dual) - 15.5m Ω @ 17A, 10V 4V @ 20μA Halogen Free 2260pF @ 25V 29nC @ 10V 2ns - - 9 ns 20A - 20V 60V - 0.0155Ohm 60V - - - 90 mJ METAL-OXIDE SEMICONDUCTOR - - Standard - - 1mm 5.15mm 6.15mm - - - ROHS3 Compliant -
                                          IPG20N06S415ATMA2
                                          IPG20N06S415ATMA2

                                          Infineon Technologies
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: FDS9953A,IPG16N10S461ATMA1,NTJD4105CT2G,NVMFD5C462NLT1G,BSO211PHXUMA1.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.