- Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - FETs, MOSFETs - Arrays
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Weight | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Additional Feature | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Recovery Time | FET Feature | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипNTZD3154NT5GAnlielectronics Тип | ON Semiconductor |
Dual N-Channel Small Signal MOSFET 20V, 540mA, 550mO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | - | - | Surface Mount | SOT-563, SOT-666 | YES | 6 | - | SILICON | - | 2 | 16 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | - | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | 400MOhm | Tin (Sn) | - | 20V | 250mW | - | FLAT | 260 | - | 540mA | 40 | NTZD3154N | 6 | - | - | - | - | Dual | ENHANCEMENT MODE | 250mW | - | 6 ns | - | 2 N-Channel (Dual) | SWITCHING | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 150pF @ 16V | 2.5nC @ 4.5V | 4ns | - | - | 4 ns | 540mA | - | 6V | 0.54A | - | 20V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | 20 pF | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NTZD3154NT5G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFI4020H-117PAnlielectronics Тип | Infineon Technologies |
200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Through Hole | Through Hole | TO-220-5 Full Pack | - | 5 | - | SILICON | - | 2 | 18 ns | -55°C~150°C TJ | Tube | 2006 | - | - | - | Active | 1 (Unlimited) | 5 | - | EAR99 | 100MOhm | - | - | - | 21W | SINGLE | - | - | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 21W | DRAIN | 8.4 ns | - | 2 N-Channel (Dual) | AMPLIFIER | 100m Ω @ 5.5A, 10V | 4.9V @ 100μA | 1240pF @ 25V | 29nC @ 10V | 8ns | 200V | - | 4 ns | 9.1A | 4.9V | 20V | - | - | 200V | 36A | - | - | 130 mJ | METAL-OXIDE SEMICONDUCTOR | 110 ns | Standard | 4.9 V | - | 9.02mm | 10.6172mm | 4.826mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRFI4020H-117P | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDS89161LZAnlielectronics Тип | ON Semiconductor |
MOSFET PT5 100V Logic Level with Zener
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE (Last Updated: 6 days ago) | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 187mg | SILICON | - | 2 | 9.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Tin (Sn) | ULTRA-LOW RESISTANCE | - | 1.6W | - | GULL WING | - | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 31W | - | 3.8 ns | - | 2 N-Channel (Dual) | SWITCHING | 105m Ω @ 2.7A, 10V | 2.2V @ 250μA | 302pF @ 50V | 5.3nC @ 10V | 10ns | 100V | - | 10 ns | 2.7A | - | 20V | - | 0.105Ohm | 100V | 15A | - | - | 13 mJ | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | 1.575mm | 4.9mm | 3.9mm | No | - | ROHS3 Compliant | - | ||
| FDS89161LZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFQS4901TFAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 400V 0.45A 8SOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 230.4mg | SILICON | - | 2 | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | QFET® | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | 4.2Ohm | Tin (Sn) | - | 400V | 2W | - | GULL WING | - | - | 450mA | - | FQS4901 | - | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 5 ns | - | 2 N-Channel (Dual) | SWITCHING | 4.2 Ω @ 225mA, 10V | 4V @ 250μA | 210pF @ 25V | 7.5nC @ 10V | 20ns | - | - | 35 ns | 450mA | 4V | 25V | 0.45A | - | 400V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FQS4901TF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипMCH6663-TL-WAnlielectronics Тип | ON Semiconductor |
MOSFET N/P-CH 30V 1.8/1.5A MCPH6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | ACTIVE (Last Updated: 2 days ago) | - | Surface Mount | Surface Mount | 6-SMD, Flat Leads | - | - | - | SILICON | 1.8A 1.5A | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | e6 | yes | Active | 1 (Unlimited) | 6 | - | - | - | Tin/Bismuth (Sn/Bi) | - | - | 800mW | DUAL | - | - | - | - | - | - | - | - | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | - | N and P-Channel | - | 188m Ω @ 900mA, 10V | 2.6V @ 1mA | 88pF @ 10V | 2nC @ 10V | - | 30V | N-CHANNEL AND P-CHANNEL | - | 1.5A | - | - | 1.8A | 0.188Ohm | - | - | - | 30V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate, 4V Drive | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| MCH6663-TL-W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNVMFD5C466NLWFT1GAnlielectronics Тип | ON Semiconductor |
NVMFD5C466NLWFT1G Dual N-Channel MOSFET, 52 A, 40 V NVMFD5C466NL, 8-Pin DFN ON Semiconductor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | - | - | Surface Mount | 8-PowerTDFN | - | - | - | - | 14A Ta 52A Tc | - | - | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | Active | 1 (Unlimited) | - | - | - | - | Tin (Sn) | - | - | - | - | - | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | 3W Ta 40W Tc | 2 N-Channel (Dual) | - | 7.4m Ω @ 10A, 10V | 2.2V @ 30μA | 997pF @ 25V | 7nC @ 4.5V | - | 40V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Standard | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| NVMFD5C466NLWFT1G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMN61D9UDW-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CH 60V 0.35A
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | - | - | SILICON | - | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | - | e3 | - | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Matte Tin (Sn) | - | - | 320mW | - | GULL WING | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | - | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | 320mW | 2 N-Channel (Dual) | SWITCHING | 2 Ω @ 50mA, 5V | 1V @ 250μA | 28.5pF @ 30V | 0.4nC @ 4.5V | - | 60V | - | - | 350mA | - | - | 0.35A | 3.5Ohm | - | - | - | 60V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMN61D9UDW-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMG6898LSD-13Anlielectronics Тип | Diodes Incorporated |
MOSFET MOSFET N-CHAN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 73.992255mg | SILICON | - | 2 | 35.89 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Matte Tin (Sn) | ESD PROTECTED, HIGH RELIABILITY | - | 1.28W | - | GULL WING | 260 | - | - | 40 | DMG6898LSD | 8 | - | - | - | - | - | ENHANCEMENT MODE | 1.28W | - | 11.67 ns | - | 2 N-Channel (Dual) | SWITCHING | 16m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | 1149pF @ 10V | 26nC @ 10V | 12.49ns | 20V | - | 12.33 ns | 9.5A | - | 12V | - | 0.016Ohm | - | 30A | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | 1.5mm | 4.95mm | 3.95mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMG6898LSD-13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMA6023PZTAnlielectronics Тип | ON Semiconductor |
Supplied as a Tape, Dual P-Channel MOSFET, 3.6 A, 20 V, 6-Pin MLP ON Semiconductor FDMA6023PZT
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | - | Surface Mount | Surface Mount | 6-UDFN Exposed Pad | - | 6 | 40mg | SILICON | 3.6A | 2 | 75 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | 1.4W | - | - | - | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 1.4W | DRAIN | 13 ns | 700mW | 2 P-Channel (Dual) | SWITCHING | 60m Ω @ 3.6A, 4.5V | 1.5V @ 250μA | 885pF @ 10V | 17nC @ 4.5V | 11ns | - | - | 11 ns | -3.6A | -500mV | 8V | - | - | 20V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | -500 mV | 150 pF | 500μm | 2mm | 2mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDMA6023PZT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипEM6K7T2RAnlielectronics Тип | ROHM Semiconductor |
MOSFET 2N-CH 20V 0.2A EMT6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | - | Surface Mount | Surface Mount | SOT-563, SOT-666 | - | 6 | - | SILICON | - | 2 | 15 ns | 150°C TJ | Digi-Reel® | 2009 | - | - | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | - | - | - | 150mW | - | FLAT | 260 | - | - | 10 | *K7 | 6 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | 5 ns | - | 2 N-Channel (Dual) | SWITCHING | 1.2 Ω @ 200mA, 2.5V | 1V @ 1mA | 25pF @ 10V | - | 10ns | 20V | - | 10 ns | 200mA | - | 8V | 0.2A | 1.4Ohm | - | - | - | 20V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| EM6K7T2R | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDPC8014SAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 25V 8PWRCLIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | Surface Mount | Surface Mount | 8-PowerWDFN | - | 8 | 207.7333mg | SILICON | 20A 41A | 2 | 47 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | 2.3W | - | NO LEAD | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | - | - | - | - | 2 | - | ENHANCEMENT MODE | - | DRAIN | 16 ns | 2.1W 2.3W | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 3.8m Ω @ 20A, 10V | 2.5V @ 250μA | 2375pF @ 13V | 35nC @ 10V | 6ns | 25V | - | 4 ns | 41A | - | 12V | 110A | - | - | 75A | - | - | 73 mJ | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | 750μm | 5.1mm | 6.1mm | - | - | ROHS3 Compliant | - | ||
| FDPC8014S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAO4832Anlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 10A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | - | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | 2W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2W | - | - | - | 2 N-Channel (Dual) | - | 13m Ω @ 10A, 10V | 2.5V @ 250μA | 910pF @ 15V | 17nC @ 10V | - | 30V | - | - | 10A | - | 20V | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| AO4832 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMA1029PZAnlielectronics Тип | ON Semiconductor |
MOSFET 2P-CH 20V 3.1A MICROFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | ACTIVE (Last Updated: 3 days ago) | Gold | Surface Mount | Surface Mount | 6-VDFN Exposed Pad | - | 6 | 40mg | SILICON | - | 2 | 37 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | - | - | - | -20V | 1.4W | - | - | - | - | -3.1A | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 1.4W | DRAIN | 13 ns | 700mW | 2 P-Channel (Dual) | SWITCHING | 95m Ω @ 3.1A, 4.5V | 1.5V @ 250μA | 540pF @ 10V | 10nC @ 4.5V | 11ns | 20V | - | 11 ns | 3.1A | 1V | 12V | - | 0.095Ohm | -20V | - | -20V | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | -1 V | - | 750μm | 2mm | 2mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDMA1029PZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипEMH2418R-TL-HAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N-CH 24V 9A 8-Pin SOT-383FL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 9 Weeks | ACTIVE (Last Updated: 20 hours ago) | - | Surface Mount | Surface Mount | 8-SMD, Flat Lead | - | 8 | - | - | - | - | 17.5 μs | 150°C TJ | Tape & Reel (TR) | 2014 | - | e6 | yes | Active | 1 (Unlimited) | - | - | EAR99 | - | Tin/Bismuth (Sn/Bi) | - | - | 1.3W | - | - | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | - | - | - | - | 2 | - | - | - | - | 120 ns | - | 2 N-Channel (Dual) Common Drain | - | 15m Ω @ 4A, 4.5V | 1.3V @ 1mA | - | 4.4nC @ 4.5V | 170ns | 24V | - | 22.6 μs | 9A | - | 12V | - | - | - | - | - | - | - | - | - | Logic Level Gate, 2.5V Drive | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| EMH2418R-TL-H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDS6930AAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 30V 5.5A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 187mg | SILICON | - | 2 | 17 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | 40mOhm | Tin (Sn) | LOGIC LEVEL COMPATIBLE | 30V | 900mW | - | GULL WING | - | - | 5.5A | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 5 ns | - | 2 N-Channel (Dual) | SWITCHING | 40m Ω @ 5.5A, 10V | 3V @ 250μA | 460pF @ 15V | 7nC @ 5V | 8ns | - | - | 13 ns | 5.5A | 1.5V | 20V | 4.6A | - | 30V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDS6930A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDMC6040SSD-13Anlielectronics Тип | Diodes Incorporated |
MOSFET N/P-CH 60V 5.1A/3.1A 8-SO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 73.992255mg | SILICON | 5.1A 3.1A | 2 | 58.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | - | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Matte Tin (Sn) | HIGH RELIABILITY | - | 1.24W | DUAL | GULL WING | 260 | - | - | 30 | - | - | AEC-Q101 | - | - | 2 | - | ENHANCEMENT MODE | - | - | 3.7 ns | - | N and P-Channel | SWITCHING | 40m Ω @ 8A, 10V | 3V @ 250μA | 1130pF @ 15V | 20.8nC @ 10V | 6.3ns | 60V | N-CHANNEL AND P-CHANNEL | 26.1 ns | 3.1A | - | 20V | 5.1A | 0.04Ohm | -60V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMC6040SSD-13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMS7620SAnlielectronics Тип | ON Semiconductor |
DUAL N CH MOSFET, 30V, 22A, POWER56 - More Details
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | ACTIVE (Last Updated: 6 days ago) | - | Surface Mount | Surface Mount | 8-PowerWDFN | - | 8 | 211mg | SILICON | 10.1A 12.4A | 2 | 17.4 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | - | - | 2.5W | - | - | - | - | - | - | - | - | - | R-PDSO-N6 | - | - | - | ENHANCEMENT MODE | 2.2W | DRAIN SOURCE | 6.6 ns | 1W | 2 N-Channel (Dual) | SWITCHING | 20m Ω @ 10.1A, 10V | 3V @ 250μA | 608pF @ 15V | 11nC @ 10V | 1.8ns | - | - | 1.5 ns | 12.4A | 2.2V | 20V | 0.0101A | - | 30V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | 31 pF | 750μm | 5mm | 6mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDMS7620S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDS8978Anlielectronics Тип | ON Semiconductor |
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 187mg | - | - | 2 | 48 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | - | - | Active | 1 (Unlimited) | - | - | - | 18MOhm | - | - | - | 1.6W | - | - | - | - | - | - | - | - | - | - | - | - | Dual | - | 1.6W | - | 7 ns | - | 2 N-Channel (Dual) | - | 18m Ω @ 7.5A, 10V | 2.5V @ 250μA | 1270pF @ 15V | 26nC @ 10V | 37ns | 30V | - | 37 ns | 7.5A | 2.5V | 20V | - | - | 30V | - | - | - | - | - | - | Logic Level Gate | - | - | 1.5mm | 5mm | 4mm | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDS8978 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDS8928AAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N/P-CH 30V/20V 5.5A/4A 8-Pin SOIC N T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | ACTIVE (Last Updated: 6 days ago) | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 230.4mg | SILICON | 5.5A 4A | 2 | 260 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | 30MOhm | - | - | - | 2W | DUAL | GULL WING | - | - | 5.5A | - | - | - | - | - | - | - | - | ENHANCEMENT MODE | 2W | - | - | 900mW | N and P-Channel | SWITCHING | 30m Ω @ 5.5A, 4.5V | 1V @ 250μA | 900pF @ 10V | 28nC @ 4.5V | 23ns | 30V 20V | N-CHANNEL AND P-CHANNEL | 90 ns | 5.5A | 670mV | 8V | - | - | -20V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | 670 mV | - | 1.5mm | 5mm | 4mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDS8928A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNTHC5513T1GAnlielectronics Тип | ON Semiconductor |
MOSFET N/P-CH 20V 1206A
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 2 Weeks | ACTIVE (Last Updated: 1 week ago) | - | - | Surface Mount | 8-SMD, Flat Lead | YES | 8 | 4.535924g | SILICON | 2.9A 2.2A | 2 | 33 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Tin (Sn) | - | 20V | 1.1W | - | C BEND | 260 | - | 3.1A | 40 | NTHC5513 | 8 | - | - | - | - | Dual | ENHANCEMENT MODE | 1.1W | - | 7 ns | - | N and P-Channel | SWITCHING | 80m Ω @ 2.9A, 4.5V | 1.2V @ 250μA | 180pF @ 10V | 4nC @ 4.5V | 13ns | - | N-CHANNEL AND P-CHANNEL | - | 3.9A | 600mV | 12V | - | - | -20V | 10A | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | 600 mV | - | 1.1mm | 3.1mm | 1.7mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| NTHC5513T1G |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ