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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Input Voltage-Nom | Number of Channels | Analog IC - Other Type | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Input Voltage (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Control Technique | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Switcher Configuration | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Switching Frequency-Max | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | Input Capacitance | Avalanche Energy Rating (Eas) | FET Technology | Recovery Time | FET Feature | Drain to Source Resistance | Rds On Max | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Thickness | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
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  | Mfr. ТипDMP3028LSD-13Anlielectronics Тип | Diodes Incorporated |
MOSFET 2P-CH 30V 6A SO-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | - | - | - | - | - | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | - | Active | 1 (Unlimited) | - | - | EAR99 | - | Matte Tin (Sn) | - | - | - | - | 1.3W | - | - | 260 | - | - | - | - | 30 | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.3W | 2 P-Channel (Dual) | - | - | 25m Ω @ 7A, 10V | 3V @ 250μA | - | - | 1241pF @ 15V | 10.9nC @ 10V | - | 30V | - | - | - | 6A | - | - | - | - | 6A | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| DMP3028LSD-13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNVMFD5485NLWFT1GAnlielectronics Тип | ON Semiconductor |
ON SEMICONDUCTOR - NVMFD5485NLWFT1G - NFET DFN8 60V 20A 60MOHM / REEL
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 3 days ago) | - | - | Surface Mount | 8-PowerTDFN | - | 8 | - | - | - | - | - | 27.8 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | - | e3 | yes | Not For New Designs | 1 (Unlimited) | - | - | EAR99 | - | Tin (Sn) | - | - | - | - | 2.9W | - | - | - | - | - | - | - | - | - | 8 | - | - | - | - | 2 | - | Dual | - | - | - | 9.5 ns | - | 2 N-Channel (Dual) | - | - | 44m Ω @ 15A, 10V | 2.5V @ 250μA | Halogen Free | - | 560pF @ 25V | 20nC @ 10V | 26.6ns | 60V | - | 23.7 ns | - | 5.3A | - | 20V | - | - | - | - | 60V | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NVMFD5485NLWFT1G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDMP4025LSD-13Anlielectronics Тип | Diodes Incorporated |
MOSFET 2P-CH 40V 6.9A 8SO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 17 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 73.992255mg | SILICON | 6.9A | 2 | 53.7 ns | -55°C~150°C TJ | Cut Tape (CT) | 2013 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | - | 1.8W | - | GULL WING | 260 | - | - | - | - | 40 | DMP4025LSD | - | - | - | - | - | - | - | - | ENHANCEMENT MODE | 1.8W | - | 6.9 ns | - | 2 P-Channel (Dual) | SWITCHING | - | 25m Ω @ 3A, 10V | 1.8V @ 250μA | - | - | 1640pF @ 20V | 33.7nC @ 10V | 14.7ns | 40V | - | 30.9 ns | - | -7.6A | -1.3V | 20V | - | - | - | 0.045Ohm | -40V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | 1.5mm | 4.95mm | 3.95mm | - | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMP4025LSD-13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипAO4614BAnlielectronics Тип | Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 40V 6A/5A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | - | 6A 5A | 2 | - | -55°C~150°C TJ | Cut Tape (CT) | 1999 | - | - | - | Active | 1 (Unlimited) | - | - | - | - | - | - | - | - | - | 2W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2W | - | - | - | N and P-Channel | - | - | 30m Ω @ 6A, 10V | 3V @ 250μA | - | - | 650pF @ 20V | 10.8nC @ 10V | - | 40V | - | - | - | 5A | - | 20V | - | - | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| AO4614B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNTMD5838NLR2GAnlielectronics Тип | ON Semiconductor |
MOSFET N-CH 40V 8.9A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 52 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | - | - | SILICON | - | 2 | 17 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | - | - | 2.1W | - | GULL WING | - | - | - | - | - | - | - | 8 | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 2.1W | - | 11 ns | - | 2 N-Channel (Dual) | - | - | 25m Ω @ 7A, 10V | 3V @ 250μA | - | - | 785pF @ 20V | 17nC @ 10V | 23ns | 40V | - | 4 ns | - | 7.4A | 1.8V | 20V | - | - | - | - | 40V | 35A | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | 1.5mm | 5mm | 4mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| NTMD5838NLR2G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF7379TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N/P-CH 30V 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | SILICON | 5.8A 4.3A | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | - | Not For New Designs | 1 (Unlimited) | 8 | - | - | - | Matte Tin (Sn) | - | - | - | - | 2.5W | DUAL | GULL WING | - | - | - | - | 5.8A | - | IRF7379PBF | - | - | - | - | - | - | - | - | ENHANCEMENT MODE | 2.5W | - | - | - | N and P-Channel | SWITCHING | - | 45m Ω @ 5.8A, 10V | 1V @ 250μA | - | - | 520pF @ 25V | 25nC @ 10V | - | - | N-CHANNEL AND P-CHANNEL | - | - | 5.8A | - | 20V | - | - | - | 0.045Ohm | 30V | 46A | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | 1.4986mm | 4.9784mm | 3.9878mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| IRF7379TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMS3660SAnlielectronics Тип | ON Semiconductor |
MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | Surface Mount | Surface Mount | 8-PowerTDFN | - | 8 | - | 171mg | SILICON | 30A 60A | 2 | 19 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | - | - | - | - | - | 2.5W | - | FLAT | - | - | - | - | - | - | FDMS3660S | - | - | R-PDSO-F6 | - | - | - | - | Dual | ENHANCEMENT MODE | 2.5W | DRAIN SOURCE | 7.7 ns | 1W | 2 N-Channel (Dual) Asymmetrical | SWITCHING | - | 8m Ω @ 13A, 10V | 2.7V @ 250μA | - | - | 1765pF @ 15V | 29nC @ 10V | - | - | - | - | - | 30A | 1.5V | 12V | - | - | 13A | - | 30V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | 1.5 V | 70 pF | 1.1mm | 5mm | 5.9mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDMS3660S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIPG20N04S412ATMA1Anlielectronics Тип | Infineon Technologies |
MOSFET 2N-CH 8TDSON
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | - | Surface Mount | 8-PowerVDFN | - | 8 | PG-TDSON-8-4 | - | - | 20A | - | 10 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | - | - | Active | 1 (Unlimited) | - | - | - | - | - | 175°C | -55°C | - | - | 41W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Dual | - | 41W | - | 9 ns | 41W | 2 N-Channel (Dual) | - | - | 12.2mOhm @ 17A, 10V | 4V @ 15μA | Halogen Free | - | 1470pF @ 25V | 18nC @ 10V | 2ns | 40V | - | 8 ns | - | 20A | - | 20V | 40V | - | - | - | 40V | - | - | 1.13nF | - | - | - | Standard | 12.2mOhm | 12.2 mΩ | - | - | 1mm | 5.15mm | 6.15mm | - | - | - | ROHS3 Compliant | - | ||
| IPG20N04S412ATMA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDG1024NZAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N-CH 20V 1.2A 6-Pin SC-70 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | Surface Mount | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | 6 | - | 28mg | SILICON | - | 2 | 11 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 6 | - | EAR99 | - | - | - | - | - | - | 360mW | - | GULL WING | NOT SPECIFIED | - | - | - | - | NOT SPECIFIED | - | - | - | - | Not Qualified | - | - | - | Dual | ENHANCEMENT MODE | 360mW | - | 3.7 ns | 300mW | 2 N-Channel (Dual) | SWITCHING | - | 175m Ω @ 1.2A, 4.5V | 1V @ 250μA | - | - | 150pF @ 10V | 2.6nC @ 4.5V | 1.7ns | 20V | - | 1.5 ns | - | 1.2A | 800mV | 8V | - | - | - | 0.175Ohm | 20V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | 800 mV | - | 1mm | 2mm | 1.25mm | - | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDG1024NZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNTMD4820NR2GAnlielectronics Тип | ON Semiconductor |
Dual N-Channel 30 V 27 mOhm 7.7 nC 1.28 W Silicon SMT Mosfet - SOIC-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 2 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | - | - | SILICON | 4.9A | 1 | 21 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | - | - | 1.29W | - | GULL WING | - | - | - | - | - | - | NTMD4820N | 8 | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 1.28W | - | 9.4 ns | 750mW | 2 N-Channel (Dual) | SWITCHING | - | 20m Ω @ 7.5A, 10V | 3V @ 250μA | - | - | 940pF @ 15V | 7.7nC @ 4.5V | 4ns | - | - | 4 ns | - | 6.4A | - | 20V | - | - | 4.9A | 0.02Ohm | 30V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | 1.5mm | 5mm | 4mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| NTMD4820NR2G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDS6975Anlielectronics Тип | ON Semiconductor |
Dual P-Channel 30 V 32 mOhm Logic Level PowerTrench Mosfet - SOIC-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 187mg | SILICON | 6A | 2 | 47 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 32mOhm | - | - | - | LOGIC LEVEL COMPATIBLE | -30V | 2W | - | GULL WING | - | - | - | - | -6A | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 13 ns | 900mW | 2 P-Channel (Dual) | SWITCHING | - | 32m Ω @ 6A, 10V | 3V @ 250μA | - | - | 1540pF @ 15V | 20nC @ 5V | 22ns | 30V | - | 18 ns | - | -6A | -1.7V | 20V | - | - | 6A | - | -30V | - | -30V | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | -1.7 V | - | 1.5mm | 5mm | 4mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDS6975 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипECH8663R-TL-HAnlielectronics Тип | ON Semiconductor |
In a Pack of 25, ECH8663R-TL-H Dual N-Channel MOSFET, 8 A, 30 V, 8-Pin ECH ON Semiconductor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 2 Weeks | ACTIVE (Last Updated: 2 days ago) | - | - | Surface Mount | 8-SMD, Flat Lead | - | 8 | - | - | - | - | - | 4.2 μs | 150°C TJ | Tape & Reel (TR) | 2008 | - | e6 | yes | Active | 1 (Unlimited) | - | - | EAR99 | - | Tin/Bismuth (Sn/Bi) | - | - | - | - | 1.5W | - | - | - | - | - | - | - | - | - | 8 | - | - | - | - | - | - | Dual | - | 1.5W | - | 320 ns | - | 2 N-Channel (Dual) | - | - | 20.5m Ω @ 4A, 4.5V | - | Halogen Free | - | - | 12.3nC @ 4.5V | 850ns | 30V | - | 1.8 μs | - | 8A | - | 12V | - | - | - | - | 30V | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | 900μm | 2.9mm | 2.3mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| ECH8663R-TL-H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDMC4047LSD-13Anlielectronics Тип | Diodes Incorporated |
MOSFET N/P-CH 40V 7A/5.1A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 73.992255mg | SILICON | 7A 5.1A | 2 | 34.9 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Matte Tin (Sn) | - | - | HIGH RELIABILITY | - | 1.8W | DUAL | GULL WING | - | - | - | - | - | - | - | - | AEC-Q101 | - | - | - | 2 | - | - | ENHANCEMENT MODE | - | - | 8.7 ns | 1.3W | N and P-Channel | SWITCHING | - | 24m Ω @ 6A, 10V | 2.4V @ 250μA | - | - | 1060pF @ 20V | 19.1nC @ 10V | 19.6ns | - | N-CHANNEL AND P-CHANNEL | 25.5 ns | - | 5.1A | - | 20V | - | - | 7A | - | 40V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | 1.5mm | 4.95mm | 3.95mm | - | - | - | ROHS3 Compliant | - | ||
| DMC4047LSD-13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDMG4822SSD-13Anlielectronics Тип | Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 73.992255mg | SILICON | - | 2 | 14.6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Matte Tin (Sn) | - | - | HIGH RELIABILITY | - | 1.42W | - | GULL WING | 260 | - | - | - | - | 40 | DMG4822 | 8 | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 1.42W | - | 2.9 ns | - | 2 N-Channel (Dual) | SWITCHING | - | 20m Ω @ 8.5A, 10V | 3V @ 250μA | - | - | 478.9pF @ 16V | 10.5nC @ 10V | 7.9ns | 30V | - | 3.1 ns | - | 10A | - | 25V | - | - | - | - | 30V | 60A | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | 1.5mm | 4.95mm | 3.95mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMG4822SSD-13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипECH8695R-TL-WAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 24V 11A SOT28
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | Surface Mount | Surface Mount | 8-SMD, Flat Lead | - | 8 | - | - | - | - | - | 19.7 μs | 150°C TJ | Tape & Reel (TR) | 2013 | - | e6 | yes | Active | 1 (Unlimited) | - | - | EAR99 | - | - | - | - | - | - | 1.4W | - | - | NOT SPECIFIED | - | - | not_compliant | - | NOT SPECIFIED | - | - | - | - | - | - | 2 | - | Dual | - | - | - | 300 ns | - | 2 N-Channel (Dual) Common Drain | - | - | 9.1m Ω @ 5A, 4.5V | 1.3V @ 1mA | - | - | - | 10nC @ 4.5V | 320ns | 24V | - | 22.3 μs | - | 11A | - | 12.5V | - | - | - | - | 24V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate, 2.5V Drive | - | - | - | - | 900μm | 2.9mm | 2.3mm | - | - | - | ROHS3 Compliant | Lead Free | ||
| ECH8695R-TL-W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDS6911Anlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 20V 7.5A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 187mg | SILICON | - | 2 | 26 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Tin (Sn) | - | - | - | 20V | 900mW | - | GULL WING | - | - | - | - | 7.5A | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 1.6W | - | 9 ns | - | 2 N-Channel (Dual) | SWITCHING | - | 13m Ω @ 7.5A, 10V | 3V @ 250μA | - | - | 1130pF @ 15V | 24nC @ 10V | 5ns | - | - | 5 ns | - | 7.5A | - | 20V | - | - | - | 0.013Ohm | 20V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | 1.8 V | - | 1.575mm | 4.9mm | 3.9mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDS6911 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRF9389TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | SILICON | 6.8A 4.6A | 2 | 17 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | - | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | - | - | 2W | - | GULL WING | - | - | - | - | - | - | IRF9389 | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | - | - | N and P-Channel | SWITCHING | - | 27m Ω @ 6.8A, 10V | 2.3V @ 10μA | - | - | 398pF @ 15V | 14nC @ 10V | 14ns | - | N-CHANNEL AND P-CHANNEL | 15 ns | - | 4.6A | 1.8V | 20V | - | - | - | - | 30V | 34A | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | 1.5mm | 5mm | 4mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRF9389TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипCSD87350Q5DAnlielectronics Тип | Texas Instruments |
Synchronous Buck NexFET Power Block 8-Pin SON EP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE (Last Updated: 6 days ago) | Tin | Surface Mount | Surface Mount | 8-PowerLDFN | - | 8 | - | - | - | - | - | 33 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | NexFET™ | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | - | - | - | - | - | 12W | - | - | 260 | 1 | 1.27mm | - | - | - | CSD87350 | 9 | - | - | - | 12V | - | SWITCHING REGULATOR | Dual | - | 12W | - | 8 ns | - | 2 N-Channel (Dual) | - | 27V | 5.9m Ω @ 20A, 8V | 2.1V @ 250μA | - | PULSE WIDTH MODULATION | 1770pF @ 15V | 10.9nC @ 4.5V | 17ns | 30V | - | 2.3 ns | BUCK | 40A | 2.1V | 8V | - | 1500kHz | - | - | 30V | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | 1.5mm | 5mm | 6mm | 1.5mm | No | No SVHC | ROHS3 Compliant | Contains Lead | ||
| CSD87350Q5D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMP2035UTS-13Anlielectronics Тип | Diodes Incorporated |
MOSFET MOSFET P-CHAN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 15 Weeks | - | - | Surface Mount | Surface Mount | 8-TSSOP (0.173, 4.40mm Width) | - | 8 | - | 157.991892mg | SILICON | - | 2 | 94.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | - | e3 | yes | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Matte Tin (Sn) | - | - | HIGH RELIABILITY | - | 890mW | - | GULL WING | 260 | - | - | - | - | 40 | DMP2035UTS | 8 | - | - | - | - | - | - | - | ENHANCEMENT MODE | 890mW | - | 16.8 ns | - | 2 P-Channel (Dual) Common Drain | SWITCHING | - | 35m Ω @ 4A, 4.5V | 1V @ 250μA | - | - | 1610pF @ 10V | 15.4nC @ 4.5V | 12.4ns | 20V | - | 42.4 ns | - | 6.04A | - | 8V | - | - | - | 0.045Ohm | -20V | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | - | ||
| DMP2035UTS-13 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFI4019H-117PAnlielectronics Тип | Infineon Technologies |
MOSFET 2N-CH 150V 8.7A TO-220FP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Through Hole | Through Hole | TO-220-5 Full Pack | - | 5 | - | - | SILICON | - | 2 | 13 ns | -55°C~150°C TJ | Tube | 2006 | - | - | - | Active | 1 (Unlimited) | 5 | - | EAR99 | 95MOhm | - | - | - | - | - | 18W | SINGLE | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 18W | - | 7 ns | - | 2 N-Channel (Dual) | AMPLIFIER | - | 95m Ω @ 5.2A, 10V | 4.9V @ 50μA | - | - | 810pF @ 25V | 20nC @ 10V | 6.6ns | 150V | - | 3.1 ns | - | 8.7A | 4.9V | 20V | - | - | - | - | 150V | 34A | - | - | 77 mJ | METAL-OXIDE SEMICONDUCTOR | 86 ns | Standard | - | - | 4.9 V | - | 9.02mm | 10.6172mm | 4.826mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRFI4019H-117P |
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