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ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]
Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Configuration Number of Channels Analog IC - Other Type Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Control Technique Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage JEDEC-95 Code Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Max Junction Temperature (Tj) FET Feature Nominal Vgs Feedback Cap-Max (Crss) Height Height Seated (Max) Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor FDC6420C
Mfr. Тип
FDC6420C
Anlielectronics Тип

ON Semiconductor
ON SEMICONDUCTOR - FDC6420C - Dual MOSFET, N and P Channel, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 10 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 36mg SILICON 3A 2.2A 2 10 ns -55°C~150°C TJ Tape & Reel (TR) 2017 PowerTrench® e3 yes Active 1 (Unlimited) 6 SMD/SMT EAR99 70MOhm TIN (SN) - - 700mW - GULL WING 260 - - 3A 30 - - - - - - 2 - Dual ENHANCEMENT MODE 960mW - - - N and P-Channel SWITCHING 70m Ω @ 3A, 4.5V 1.5V @ 250μA - - 324pF @ 10V 4.6nC @ 4.5V 12ns - N-CHANNEL AND P-CHANNEL 12 ns 3A 900mV - 12V - 3A - 20V - 20V - - METAL-OXIDE SEMICONDUCTOR 150°C Logic Level Gate 900 mV - 900μm - - - - No No SVHC ROHS3 Compliant Lead Free
    FDC6420C
    FDC6420C

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor NTMD3P03R2G
    Mfr. Тип
    NTMD3P03R2G
    Anlielectronics Тип

    		ON Semiconductor
    MOSFET 2P-CH 30V 2.34A 8SOIC
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 6 Weeks ACTIVE (Last Updated: 1 day ago) Tin Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON 2.34A 2 45 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Active 1 (Unlimited) 8 - EAR99 85MOhm - AVALANCHE RATED -30V 2W - GULL WING - - - -3.05A - NTMD3P03 8 - - - - - - - ENHANCEMENT MODE 2W - 16 ns 730mW 2 P-Channel (Dual) SWITCHING 85m Ω @ 3.05A, 10V 2.5V @ 250μA - - 750pF @ 24V 25nC @ 10V 16ns 30V - 45 ns -3.05A - - 20V - - - -30V - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate -1.7 V 135 pF 1.5mm - 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
      NTMD3P03R2G
      NTMD3P03R2G

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Diodes Incorporated DMG6602SVTQ-7
      Mfr. Тип
      DMG6602SVTQ-7
      Anlielectronics Тип

      		Diodes Incorporated
      MOSFET N/P-CH 30V TSOT26
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 15 Weeks - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - - - SILICON 3.4A 2.8A 2 - -55°C~150°C TJ Tape & Reel (TR) 2014 - e3 - Active 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) HIGH RELIABILITY - 840mW DUAL GULL WING NOT SPECIFIED - - - NOT SPECIFIED - - AEC-Q101 R-PDSO-G6 - - 2 - - ENHANCEMENT MODE 840mW - - - N and P-Channel SWITCHING 60m Ω @ 3.1A, 10V 2.3V @ 250μA - - 400pF @ 15V 13nC @ 10V - 30V N-CHANNEL AND P-CHANNEL - 2.8A - - 20V - - 0.06Ohm - - - 30V - METAL-OXIDE SEMICONDUCTOR 150°C Standard - 80 pF 1mm - - - - - - ROHS3 Compliant -
        DMG6602SVTQ-7
        DMG6602SVTQ-7

        Diodes Incorporated
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Diodes Incorporated DMP3085LSD-13
        Mfr. Тип
        DMP3085LSD-13
        Anlielectronics Тип

        		Diodes Incorporated
        MOSFET 2P-CH 30V 3.9A 8SO
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 23 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON 3.9A 2 31 ns -55°C~150°C TJ Digi-Reel® 2013 - e3 - Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) HIGH RELIABILITY - 1.1W - GULL WING 260 - - - 30 - - AEC-Q101 - - - 2 - - ENHANCEMENT MODE 1.1W - 4.8 ns - 2 P-Channel (Dual) SWITCHING 70m Ω @ 5.3A, 10V 3V @ 250μA - - 563pF @ 25V 11nC @ 10V 5ns 30V - 14.6 ns -3.9A - - 20V - - 0.07Ohm -30V - - - - METAL-OXIDE SEMICONDUCTOR 150°C Logic Level Gate - - 1.7mm - 4.95mm 3.95mm - No No SVHC ROHS3 Compliant Lead Free
          DMP3085LSD-13
          DMP3085LSD-13

          Diodes Incorporated
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Infineon Technologies BSC0911NDATMA1
          Mfr. Тип
          BSC0911NDATMA1
          Anlielectronics Тип

          		Infineon Technologies
          MOSFET LV POWER MOS
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 18 Weeks - Tin Surface Mount Surface Mount 8-PowerTDFN - 8 - SILICON 18A 30A 2 25 ns -55°C~150°C TJ Cut Tape (CT) 2013 OptiMOS™ e3 no Active 1 (Unlimited) 6 - EAR99 - - - - 1W - - - - - - - - - - R-PDSO-N6 - - - - Dual ENHANCEMENT MODE 2.5W DRAIN SOURCE - - 2 N-Channel (Dual) Asymmetrical - 3.2m Ω @ 20A, 10V 2V @ 250μA - - 1600pF @ 12V 12nC @ 4.5V 5.4ns - - 4 ns 30A - - 20V - - - 25V - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate, 4.5V Drive - - - - - - - No - ROHS3 Compliant Lead Free
            BSC0911NDATMA1
            BSC0911NDATMA1

            Infineon Technologies
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Infineon Technologies IRLHS6276TRPBF
            Mfr. Тип
            IRLHS6276TRPBF
            Anlielectronics Тип

            		Infineon Technologies
            MOSFET 2N-CH 20V 4.5A PQFN
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 12 Weeks - - Surface Mount Surface Mount 6-VQFN - 6 - SILICON - 2 10 ns -55°C~150°C TJ Tape & Reel (TR) 2011 HEXFET® e3 - Active 1 (Unlimited) 6 - EAR99 45MOhm Matte Tin (Sn) - - 1.5W - - 260 - - - 30 IRLHS6276PBF - - - - - - - Dual ENHANCEMENT MODE 1.5W DRAIN 4.4 ns - 2 N-Channel (Dual) SWITCHING 45m Ω @ 3.4A, 4.5V 1.1V @ 10μA - - 310pF @ 10V 3.1nC @ 4.5V 9.3ns 20V - 4.9 ns 4.5A - - 12V - 3.4A - 20V - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate 800 mV - - - - - - No No SVHC ROHS3 Compliant Lead Free
              IRLHS6276TRPBF
              IRLHS6276TRPBF

              Infineon Technologies
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Diodes Incorporated DMP3056LSD-13
              Mfr. Тип
              DMP3056LSD-13
              Anlielectronics Тип

              		Diodes Incorporated
              MOSFET 2P-CH 30V 6.9A 8-SOIC
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 16 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON - 2 26.5 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) HIGH RELIABILITY - 2.5W - GULL WING 260 - - - 40 DMP3056LSD 8 - - - - - - - ENHANCEMENT MODE 2.5W - 6.4 ns - 2 P-Channel (Dual) SWITCHING 45m Ω @ 6A, 10V 2.1V @ 250μA - - 722pF @ 25V 13.7nC @ 10V 5.3ns 30V - 14.7 ns 6.9A - - 20V - - 0.045Ohm - - - 30V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1.5mm - 5.3mm 4.1mm - No No SVHC ROHS3 Compliant Lead Free
                DMP3056LSD-13
                DMP3056LSD-13

                Diodes Incorporated
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Infineon Technologies BSG0811NDATMA1
                Mfr. Тип
                BSG0811NDATMA1
                Anlielectronics Тип

                		Infineon Technologies
                MOSFET 2N-CH 25V 19A/41A 8TISON
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 26 Weeks - - Surface Mount Surface Mount 8-PowerTDFN - 8 - SILICON 19A 41A 2 - -55°C~150°C TJ Tape & Reel (TR) 2013 OptiMOS™ - yes Active 1 (Unlimited) 7 - - - - - - 2.5W - NO LEAD NOT SPECIFIED - not_compliant - NOT SPECIFIED - - - R-PDSO-N7 - SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - SOURCE - 2.5W 2 N-Channel (Dual) Asymmetrical SWITCHING 3m Ω @ 20A, 10V 2V @ 250μA Halogen Free - 1100pF @ 12V 8.4nC @ 4.5V - - - - 41A - - - 25V 19A 0.004Ohm - 160A - - 30 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate, 4.5V Drive - - - - - - - - - ROHS3 Compliant Contains Lead
                  BSG0811NDATMA1
                  BSG0811NDATMA1

                  Infineon Technologies
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Diodes Incorporated DMN2028UFDH-7
                  Mfr. Тип
                  DMN2028UFDH-7
                  Anlielectronics Тип

                  		Diodes Incorporated
                  MOSFET 2N-CH 20V 6.8A POWERDI
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 16 Weeks - - Surface Mount Surface Mount 8-PowerVDFN - 8 - SILICON - 2 561 ns -55°C~150°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101 e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - 1.1W - - 260 - - - 40 - - - - - - 2 - - ENHANCEMENT MODE - - 53 ns - 2 N-Channel (Dual) Common Drain SWITCHING 20m Ω @ 4A, 10V 1V @ 250μA - - 151pF @ 10V 8.5nC @ 4.5V 77ns 20V - 234 ns 6.8A - - 12V - - 0.036Ohm 20V 40A - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 800μm - 3.05mm 3.05mm - No No SVHC ROHS3 Compliant -
                    DMN2028UFDH-7
                    DMN2028UFDH-7

                    Diodes Incorporated
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    ON Semiconductor FDC8602
                    Mfr. Тип
                    FDC8602
                    Anlielectronics Тип

                    		ON Semiconductor
                    MOSFET NCH DUAL COOL POWERTRENCH MOSFET
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 35 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 36mg SILICON - 2 5.4 ns -55°C~150°C TJ Cut Tape (CT) - PowerTrench® e3 yes Active 1 (Unlimited) 6 - EAR99 - Tin (Sn) ULTRA-LOW RESISTANCE - 690mW - GULL WING - - - - - - - - - - - - - Dual ENHANCEMENT MODE 690mW - 3.5 ns - 2 N-Channel (Dual) SWITCHING 350m Ω @ 1.2A, 10V 4V @ 250μA - - 70pF @ 50V 2nC @ 10V 1.7ns 100V - 2.3 ns 1.2A 3.2V MO-193AA 20V - - 0.35Ohm 100V - - - - METAL-OXIDE SEMICONDUCTOR 150°C Standard - 5 pF 1.1mm - 3mm 1.7mm - No - ROHS3 Compliant Lead Free
                      FDC8602
                      FDC8602

                      ON Semiconductor
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      Diodes Incorporated DMG1023UV-7
                      Mfr. Тип
                      DMG1023UV-7
                      Anlielectronics Тип

                      		Diodes Incorporated
                      DMG1023UV Series 20 V 0.75 Ohm Dual P-Channel Enhancement Mode Mosfet - SOT-563
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 15 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 3.005049mg SILICON - 2 28.4 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 yes Active 1 (Unlimited) 6 - EAR99 750mOhm Matte Tin (Sn) ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD - 530mW - FLAT 260 - - - - DMG1023UV 6 - - - - - - Dual ENHANCEMENT MODE 530mW - 5.1 ns - 2 P-Channel (Dual) SWITCHING 750m Ω @ 430mA, 4.5V 1V @ 250μA - - 59.76pF @ 16V 0.62nC @ 4.5V 8.1ns 20V - 20.7 ns 1.03A -1V - 6V - - - -20V - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 600μm - 1.7mm 1.25mm - No No SVHC ROHS3 Compliant Lead Free
                        DMG1023UV-7
                        DMG1023UV-7

                        Diodes Incorporated
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Alpha & Omega Semiconductor Inc. AO8810
                        Mfr. Тип
                        AO8810
                        Anlielectronics Тип

                        		Alpha & Omega Semiconductor Inc.
                        MOSFET 2N-CH 20V 7A 8-TSSOP
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 16 Weeks - - Surface Mount Surface Mount 8-TSSOP (0.173, 4.40mm Width) - 8 - SILICON - 2 - -55°C~150°C TJ Tape & Reel (TR) 2005 - - - Not For New Designs 1 (Unlimited) 8 - - - - - - 1.5W - GULL WING NOT SPECIFIED - - - NOT SPECIFIED - - - - - COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR - - - ENHANCEMENT MODE - - - 1.5W 2 N-Channel (Dual) Common Drain SWITCHING 20m Ω @ 7A, 4.5V 1.1V @ 250μA - - 1295pF @ 10V 14nC @ 4.5V - 20V - - 7A - - - - 7A 0.0205Ohm - - - 20V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - - ROHS3 Compliant -
                          AO8810
                          AO8810

                          Alpha & Omega Semiconductor Inc.
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Alpha & Omega Semiconductor Inc. AO6804A
                          Mfr. Тип
                          AO6804A
                          Anlielectronics Тип

                          		Alpha & Omega Semiconductor Inc.
                          Trans MOSFET N-CH 20V 5A 6-Pin TSOP T/R
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 18 Weeks - - Surface Mount Surface Mount SC-74, SOT-457 - 6 - - - 2 - -55°C~150°C TJ Tape & Reel (TR) 2007 - - - Active 1 (Unlimited) - - - - - - - 1.3W - - - - - - - - - - - - - - - - - 1.3W - - - 2 N-Channel (Dual) Common Drain - 28m Ω @ 5A, 4.5V 1V @ 250μA - - 225pF @ 10V 7.5nC @ 4.5V - 20V - - 5A - - 12V - - - - - - - - - - Logic Level Gate - - - - - - - - - ROHS3 Compliant -
                            AO6804A
                            AO6804A

                            Alpha & Omega Semiconductor Inc.
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor FDMS3664S
                            Mfr. Тип
                            FDMS3664S
                            Anlielectronics Тип

                            		ON Semiconductor
                            MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 13 Weeks ACTIVE (Last Updated: 3 days ago) - Surface Mount Surface Mount 8-PowerTDFN - 8 171mg SILICON 13A 25A 2 19 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e3 yes Active 1 (Unlimited) 6 - EAR99 - Tin (Sn) - - 1W - FLAT - - - - - - - - R-PDSO-F6 - - - - Dual ENHANCEMENT MODE 2.5W DRAIN SOURCE 7.7 ns - 2 N-Channel (Dual) Asymmetrical SWITCHING 8m Ω @ 13A, 10V 2.7V @ 250μA - - 1765pF @ 15V 29nC @ 10V - - - - 25A - - 12V - 13A - 30V - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - 70 pF 1.1mm - 5mm 5.9mm - No - ROHS3 Compliant -
                              FDMS3664S
                              FDMS3664S

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Diodes Incorporated DMG1024UV-7
                              Mfr. Тип
                              DMG1024UV-7
                              Anlielectronics Тип

                              		Diodes Incorporated
                              Trans MOSFET N-CH 20V 1.38A Automotive 6-Pin SOT-563 T/R
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 15 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 3.005049mg SILICON - 2 26.7 ns -55°C~150°C TJ Tape & Reel (TR) 2010 - e3 yes Active 1 (Unlimited) 6 - EAR99 10Ohm Matte Tin (Sn) LOW THRESHOLD - 530mW - FLAT 260 - - - 40 DMG1024UV 6 - - - - - - Dual ENHANCEMENT MODE 530mW - 5.1 ns - 2 N-Channel (Dual) SWITCHING 450m Ω @ 600mA, 4.5V 1V @ 250μA - - 60.67pF @ 16V 0.74nC @ 4.5V 7.4ns 20V - 12.3 ns 1.38A - - 6V - 1.39A - 20V - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 600μm - 1.7mm 1.25mm - No No SVHC ROHS3 Compliant Lead Free
                                DMG1024UV-7
                                DMG1024UV-7

                                Diodes Incorporated
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Texas Instruments CSD88537NDT
                                Mfr. Тип
                                CSD88537NDT
                                Anlielectronics Тип

                                		Texas Instruments
                                TEXAS INSTRUMENTS CSD88537NDTDual MOSFET, Dual N Channel, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 6 Weeks ACTIVE (Last Updated: 4 days ago) Gold Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 540.001716mg SILICON 15A 2 5 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e4 yes Active 1 (Unlimited) 8 - EAR99 - - AVALANCHE RATED - 2.1W - GULL WING 260 - - - NOT SPECIFIED CSD88537 - - - - - 2 - Dual ENHANCEMENT MODE 2.1W - 6 ns - 2 N-Channel (Dual) SWITCHING 15m Ω @ 8A, 10V 3.6V @ 250μA - - 1400pF @ 30V 18nC @ 10V 15ns - - 19 ns 8A 3V - 20V - 8A 0.019Ohm 60V - - - - METAL-OXIDE SEMICONDUCTOR 150°C Standard - - 1.75mm - 4.9mm 3.91mm 1.58mm - No SVHC ROHS3 Compliant Lead Free
                                  CSD88537NDT
                                  CSD88537NDT

                                  Texas Instruments
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor NTLUD3A50PZTAG
                                  Mfr. Тип
                                  NTLUD3A50PZTAG
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  Trans MOSFET P-CH 20V 4.4A 6-Pin UDFN EP T/R
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 8 Weeks ACTIVE (Last Updated: 6 days ago) - - Surface Mount 6-UDFN Exposed Pad YES 6 - - - 2 39 ns -55°C~150°C TJ Tape & Reel (TR) 2014 - e3 yes Active 1 (Unlimited) - - EAR99 - Tin (Sn) - - 500mW - - - - - - - - 6 - - - - - - Dual - 1.4W - 7 ns - 2 P-Channel (Dual) - 50m Ω @ 4A, 4.5V 1V @ 250μA - - 920pF @ 15V 10.4nC @ 4.5V - 20V - - 2.8A - - 8V - 4.4A - - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 500μm - 2mm 2mm - - - ROHS3 Compliant Lead Free
                                    NTLUD3A50PZTAG
                                    NTLUD3A50PZTAG

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Infineon Technologies IPG20N10S4L22AATMA1
                                    Mfr. Тип
                                    IPG20N10S4L22AATMA1
                                    Anlielectronics Тип

                                    		Infineon Technologies
                                    MOSFET 2N-CH 100V 20A TDSON-8
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 12 Weeks - - Surface Mount Surface Mount, Wettable Flank 8-PowerVDFN - 8 - SILICON - 2 30 ns -55°C~175°C TJ Tape & Reel (TR) 2013 OptiMOS™ - yes Active 1 (Unlimited) 6 - EAR99 - - - - 60W - FLAT NOT SPECIFIED - not_compliant - NOT SPECIFIED - - AEC-Q101 R-PDSO-F6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - ENHANCEMENT MODE - DRAIN 5 ns 60W 2 N-Channel (Dual) - 22m Ω @ 17A, 10V 2.1V @ 25μA Halogen Free - 1755pF @ 25V 27nC @ 10V 3ns - - 18 ns 20A - - 16V 100V - 0.022Ohm - - - - 130 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - - ROHS3 Compliant Contains Lead
                                      IPG20N10S4L22AATMA1
                                      IPG20N10S4L22AATMA1

                                      Infineon Technologies
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor FDMS3604S
                                      Mfr. Тип
                                      FDMS3604S
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      Trans MOSFET N-CH 30V 13A/23A T/R
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                                        		 13 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount 8-PowerTDFN - 8 171mg SILICON 13A 23A 2 31 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e3 yes Active 1 (Unlimited) 6 - EAR99 - Tin (Sn) - - 1W - NO LEAD NOT SPECIFIED - not_compliant - NOT SPECIFIED - - - R-PDSO-N6 Not Qualified - - - Single ENHANCEMENT MODE - DRAIN SOURCE 13 ns - 2 N-Channel (Dual) Asymmetrical SWITCHING 8m Ω @ 13A, 10V 2.7V @ 250μA - - 1785pF @ 15V 29nC @ 10V 4.8ns - - 3.4 ns 23A - - 20V - 13A - 30V 40A - - 40 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1mm - 6mm 5mm - - - ROHS3 Compliant -
                                        FDMS3604S
                                        FDMS3604S

                                        ON Semiconductor
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                                        Texas Instruments CSD87588N
                                        Mfr. Тип
                                        CSD87588N
                                        Anlielectronics Тип

                                        		Texas Instruments
                                        MOSFET 2N-CH 30V 25A 5PTAB
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                                          		 8 Weeks ACTIVE (Last Updated: 3 days ago) Gold Surface Mount Surface Mount 5-XFLGA - 5 - - 25A - 20.1 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e4 yes Active 1 (Unlimited) - - EAR99 - - - - 6W BOTTOM NO LEAD 260 1 - - NOT SPECIFIED CSD87588 - - - - - - SWITCHING REGULATOR Dual - - - - - 2 N-Channel (Half Bridge) - 9.6m Ω @ 15A, 10V 1.9V @ 250μA - PULSE WIDTH MODULATION 736pF @ 15V 4.1nC @ 4.5V 36.7ns - - 6.3 ns 15A - - 20V - - - 30V - - - - - - Logic Level Gate - - - 0.4mm 5mm 2.5mm 400μm - - ROHS3 Compliant Lead Free
                                          CSD87588N
                                          CSD87588N

                                          Texas Instruments
                                          RoHS :
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                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: FDC6420C,NTMD3P03R2G,DMG6602SVTQ-7,DMP3085LSD-13,BSC0911NDATMA1.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.