- Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - FETs, MOSFETs - Arrays
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Transistor Element Material | Current - Continuous Drain (Id) @ 25℃ | Number of Elements | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Number of Outputs | Qualification Status | Output Voltage | Max Output Current | Input Voltage-Nom | Configuration | Number of Channels | Analog IC - Other Type | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | Power - Max | FET Type | Transistor Application | Input Voltage (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Output Current per Channel | Control Technique | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Supply Current-Max (Isup) | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Fall Time (Typ) | Switcher Configuration | Continuous Drain Current (ID) | Threshold Voltage | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Switching Frequency-Max | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Input Capacitance | DS Breakdown Voltage-Min | FET Technology | Max Junction Temperature (Tj) | FET Feature | Drain to Source Resistance | Rds On Max | Nominal Vgs | Feedback Cap-Max (Crss) | Turn On Time-Max (ton) | Height | Length | Width | Thickness | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIPG20N10S4L35ATMA1Anlielectronics Тип | Infineon Technologies |
Trans MOSFET N-CH 100V 20A
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | 8-PowerVDFN | - | 8 | - | - | - | - | 2 | 18 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2012 | Automotive, AEC-Q101, OptiMOS™ | e3 | - | Active | 1 (Unlimited) | - | EAR99 | - | Tin (Sn) | - | - | - | - | 43W | - | - | NOT SPECIFIED | - | - | not_compliant | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | 43W | - | 3 ns | - | 2 N-Channel (Dual) | - | - | 35m Ω @ 17A, 10V | 2.1V @ 16μA | Halogen Free | - | - | 1105pF @ 25V | 17.4nC @ 10V | 2ns | - | - | - | 13 ns | - | 20A | - | 16V | 100V | - | - | - | - | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Contains Lead | ||
| IPG20N10S4L35ATMA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMS7700SAnlielectronics Тип | ON Semiconductor |
Trans MOSFET N-CH 30V 12A/22A 8-Pin Power 56 T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | - | Surface Mount | Surface Mount | 8-PowerWDFN | - | 8 | - | 211mg | SILICON | 12A 22A | 2 | 58 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 6 | EAR99 | 7.5MOhm | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | - | - | - | - | 1W | - | - | - | - | - | - | - | - | - | - | R-PDSO-N6 | - | - | - | - | - | - | 2 | - | Dual | ENHANCEMENT MODE | 1W | - | - | - | 2 N-Channel (Dual) | SWITCHING | - | 7.5m Ω @ 12A, 10V | 3V @ 250μA | - | - | - | 1750pF @ 15V | 28nC @ 10V | 9.2ns | - | - | - | 6.8 ns | - | 30A | 1V | 20V | - | - | - | - | 30V | 40A | - | - | METAL-OXIDE SEMICONDUCTOR | 150°C | Logic Level Gate | - | - | 1.8 V | - | - | 800μm | 5mm | 6mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDMS7700S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипECH8654-TL-HAnlielectronics Тип | ON Semiconductor |
MOSFET 2P-CH 20V 5A ECH8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | ACTIVE (Last Updated: 3 days ago) | - | - | Surface Mount | 8-SMD, Flat Lead | YES | 8 | - | - | SILICON | - | 2 | 92 ns | 150°C TJ | Tape & Reel (TR) | 2007 | - | e6 | yes | Active | 1 (Unlimited) | 8 | EAR99 | - | Tin/Bismuth (Sn/Bi) | - | - | - | - | 1.5W | - | - | - | - | - | - | - | - | ECH8654 | 8 | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 1.5W | - | 14 ns | - | 2 P-Channel (Dual) | - | - | 38m Ω @ 3A, 4.5V | - | Halogen Free | - | - | 960pF @ 10V | 11nC @ 4.5V | 55ns | - | 20V | - | 68 ns | - | 5A | - | 10V | - | - | 5A | - | - | 40A | - | 20V | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | 900μm | 2.9mm | 2.3mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| ECH8654-TL-H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипDMN5L06VK-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CH 50V 0.28A SOT-563
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 19 Weeks | - | Tin | Surface Mount | Surface Mount | SOT-563, SOT-666 | - | 6 | - | 3.005049mg | SILICON | - | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | e3 | yes | Active | 1 (Unlimited) | 6 | EAR99 | 2Ohm | - | - | - | - | 50V | 250mW | - | FLAT | 260 | - | - | - | 280mA | 40 | DMN5L06VK | 6 | - | - | Not Qualified | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 250mW | - | - | - | 2 N-Channel (Dual) | SWITCHING | - | 2 Ω @ 50mA, 5V | 1V @ 250μA | - | - | - | 50pF @ 25V | - | - | - | - | - | - | - | 280mA | 1V | 20V | - | - | - | - | 50V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | 5 pF | - | 600μm | 1.6mm | 1.2mm | - | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMN5L06VK-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMC7200Anlielectronics Тип | ON Semiconductor |
MOSFET iFET - Smart Harvest
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | ACTIVE (Last Updated: 5 days ago) | - | Surface Mount | Surface Mount | 8-PowerWDFN | - | 8 | - | 186mg | SILICON | 6A 8A | 2 | 38 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 8 | EAR99 | - | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | - | - | - | - | 900mW | - | NO LEAD | NOT SPECIFIED | - | - | - | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | 2 | - | Dual | ENHANCEMENT MODE | - | DRAIN SOURCE | 13 ns | 700mW 900mW | 2 N-Channel (Dual) | SWITCHING | - | 23.5m Ω @ 6A, 10V | 3V @ 250μA | - | - | - | 660pF @ 15V | 10nC @ 10V | 4ns | - | - | - | 6 ns | - | 8A | - | 20V | - | - | 6A | - | 30V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | 30 pF | - | 800μm | 3mm | 3mm | - | - | - | ROHS3 Compliant | - | ||
| FDMC7200 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDMC8200Anlielectronics Тип | ON Semiconductor |
MOSFET DUAL N-CHANNEL PowerTrench
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 23 Weeks | ACTIVE (Last Updated: 1 week ago) | Gold | Surface Mount | Surface Mount | 8-PowerWDFN | - | 8 | - | 186mg | SILICON | 8A 12A | 2 | 38 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | - | yes | Active | 1 (Unlimited) | 8 | EAR99 | 20MOhm | - | - | - | - | - | 900mW | - | NO LEAD | NOT SPECIFIED | - | - | - | - | NOT SPECIFIED | - | - | - | - | Not Qualified | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 2.2W | DRAIN-SOURCE | - | 700mW 900mW | 2 N-Channel (Dual) | SWITCHING | - | 20m Ω @ 6A, 10V | 3V @ 250μA | - | - | - | 660pF @ 15V | 10nC @ 10V | 4ns | - | - | - | 6 ns | - | 8A | 2.3V | 20V | - | - | 8A | - | 30V | 40A | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | 2.3 V | 30 pF | 30ns | 750μm | 3mm | 3mm | - | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDMC8200 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNTMFD4C20NT1GAnlielectronics Тип | ON Semiconductor |
MOSFET NFET SO8FL 30V 27A 3.4MOH
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 24 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | - | Surface Mount | 8-PowerTDFN | YES | 8 | - | - | - | 9.1A 13.7A | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | yes | Active | 1 (Unlimited) | - | EAR99 | - | - | - | - | - | - | 1.15W | - | - | - | - | - | - | - | - | - | 8 | - | - | - | - | - | - | - | - | - | Dual | - | - | - | - | 1.09W 1.15W | 2 N-Channel (Dual) | - | - | 7.3m Ω @ 10A, 10V | 2.1V @ 250μA | Halogen Free | - | - | 970pF @ 15V | 9.3nC @ 4.5V | - | - | 30V | - | - | - | 13.7A | - | 20V | - | - | 27.4A | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | - | - | - | - | No | - | ROHS3 Compliant | Lead Free | ||
| NTMFD4C20NT1G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипCSD86350Q5DAnlielectronics Тип | Texas Instruments |
Synchronous Buck NexFET Power Block 8-Pin SON EP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | Gold, Tin | Surface Mount | Surface Mount | 8-PowerLDFN | - | 8 | - | - | - | - | - | 24 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | NexFET™ | e3 | yes | Active | 1 (Unlimited) | 9 | EAR99 | - | Matte Tin (Sn) | - | - | - | - | 13W | - | - | 260 | 1 | 1.27mm | - | - | - | CSD86350 | 9 | - | - | - | 1.3V | - | 12V | - | - | SWITCHING REGULATOR | Dual | - | 13W | - | 9 ns | - | 2 N-Channel (Half Bridge) | - | 22V | 6m Ω @ 20A, 8V | 2.1V @ 250μA | - | - | PULSE WIDTH MODULATION | 1870pF @ 12.5V | 10.7nC @ 4.5V | 23ns | 40mA | 25V | - | 21 ns | BUCK | 40A | 1.4V | 8V | - | 1500kHz | - | - | 25V | - | - | - | - | - | Logic Level Gate | - | - | 1.3 V | - | - | 1.5mm | 5mm | 6mm | 1.5mm | No | No SVHC | ROHS3 Compliant | Contains Lead | ||
| CSD86350Q5D | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипDMN2400UV-7Anlielectronics Тип | Diodes Incorporated |
MOSFET 2N-CH 20V 1.33A SOT563
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 14 Weeks | - | Tin | Surface Mount | Surface Mount | SOT-563, SOT-666 | - | 6 | - | 3.005049mg | SILICON | - | 2 | 13.74 ns | -55°C~150°C TJ | Digi-Reel® | 2017 | - | e3 | - | Active | 1 (Unlimited) | 6 | EAR99 | 500mOhm | - | - | - | HIGH RELIABILITY, LOW THRESHOLD | - | 530mW | - | FLAT | - | - | - | - | - | - | - | 6 | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 530mW | - | 4.06 ns | - | 2 N-Channel (Dual) | SWITCHING | - | 480m Ω @ 200mA, 5V | 900mV @ 250μA | - | - | - | 36pF @ 16V | 0.5nC @ 4.5V | 7.28ns | - | 20V | - | 10.54 ns | - | 1.33A | 900mV | 12V | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | 600μm | 1.7mm | 1.25mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMN2400UV-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипNTMD6N03R2GAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 30V 6A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 2 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | SILICON | - | 2 | 45 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | - | e3 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 32MOhm | - | - | - | - | 30V | 2W | - | GULL WING | 260 | - | - | - | 6A | 40 | NTMD6N03 | 8 | - | - | Not Qualified | - | - | - | - | - | - | - | ENHANCEMENT MODE | 2W | - | - | 1.29W | 2 N-Channel (Dual) | SWITCHING | - | 32m Ω @ 6A, 10V | 2.5V @ 250μA | - | - | - | 950pF @ 24V | 30nC @ 10V | 22ns | - | - | - | 45 ns | - | 6A | 1.8V | 20V | - | - | 6A | - | 30V | 30A | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| NTMD6N03R2G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDMS3669SAnlielectronics Тип | ON Semiconductor |
MOSF N CH DL 30V 24A, 60A PWR56
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 13 Weeks | ACTIVE (Last Updated: 3 days ago) | - | Surface Mount | Surface Mount | 8-PowerTDFN | - | 8 | - | 171mg | SILICON | 13A 18A | 2 | 24 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 6 | EAR99 | - | Tin (Sn) | - | - | - | - | 2.5W | - | FLAT | - | - | - | - | - | - | - | - | R-PDSO-F6 | - | - | - | - | - | - | - | - | - | ENHANCEMENT MODE | - | DRAIN SOURCE | - | 1W | 2 N-Channel (Dual) Asymmetrical | SWITCHING | - | 10m Ω @ 13A, 10V | 2.7V @ 250μA | - | - | - | 1605pF @ 15V | 24nC @ 10V | 3ns | - | - | - | 3 ns | - | 60A | - | 20V | - | - | 13A | 0.01Ohm | 30V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | 55 pF | - | 1.1mm | 5mm | 5.9mm | - | No | - | ROHS3 Compliant | - | ||
| FDMS3669S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипCSD87381PAnlielectronics Тип | Texas Instruments |
MOSFET Sync Buck NexFET Pwr Block II
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 6 Weeks | ACTIVE (Last Updated: 3 days ago) | Gold | Surface Mount | Surface Mount | 5-LGA | - | 5 | - | - | - | - | - | 16.8 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | NexFET™ | e4 | yes | Active | 1 (Unlimited) | 5 | EAR99 | - | - | - | - | - | - | 4W | UNSPECIFIED | UNSPECIFIED | 260 | 1 | - | - | - | NOT SPECIFIED | CSD87381 | - | - | 1 | - | - | 40A | 12V | - | - | SWITCHING REGULATOR | Single | - | 4W | - | - | - | 2 N-Channel (Half Bridge) | - | 24V | 16.3m Ω @ 8A, 8V | 1.9V @ 250μA | - | 15A | PULSE WIDTH MODULATION | 564pF @ 15V | 5nC @ 4.5V | 16.3ns | - | 30V | - | 2.9 ns | BUCK | 15A | - | 8V | - | - | - | - | 30V | - | - | - | - | - | Logic Level Gate | - | - | - | - | - | 480μm | 3mm | 2.5mm | 400μm | - | - | ROHS3 Compliant | Lead Free | ||
| CSD87381P | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFDMS3620SAnlielectronics Тип | ON Semiconductor |
MOSFET 25V Asymtrc Dual NCh MOSFET PowerTrench
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 18 Weeks | ACTIVE (Last Updated: 3 days ago) | - | Surface Mount | Surface Mount | 8-PowerTDFN | - | 8 | - | 90mg | SILICON | 17.5A 38A | 2 | 41 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 6 | EAR99 | - | Tin (Sn) | - | - | - | - | 1W | - | - | - | - | - | - | - | - | FDMS3620S | - | R-PDSO-N6 | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 2.5W | DRAIN SOURCE | - | - | 2 N-Channel (Dual) Asymmetrical | SWITCHING | - | 4.7m Ω @ 17.5A, 10V | 2V @ 250μA | - | - | - | 1570pF @ 13V | 26nC @ 10V | - | - | - | - | - | - | 38A | - | 12V | - | - | 17.5A | 0.0047Ohm | 25V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | 1.05mm | 5.1mm | 6.1mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| FDMS3620S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDME1034CZTAnlielectronics Тип | ON Semiconductor |
MOSFET 20V Complementary PowerTrench
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | - | Surface Mount | Surface Mount | 6-UFDFN Exposed Pad | - | 6 | - | 25.2mg | SILICON | 3.8A 2.6A | 2 | 33 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e4 | yes | Active | 1 (Unlimited) | 6 | EAR99 | - | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | ESD PROTECTION | - | 1.4W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 1.3W | DRAIN | - | 600mW | N and P-Channel | SWITCHING | - | 66m Ω @ 3.4A, 4.5V | 1V @ 250μA | - | - | - | 300pF @ 10V | 4.2nC @ 4.5V | 4.8ns | - | 20V | N-CHANNEL AND P-CHANNEL | 16 ns | - | 3.8A | 700mV | 8V | - | - | 3.4A | - | -20V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | 700 mV | 40 pF | - | 500μm | 1.6mm | 1.6mm | - | No | No SVHC | ROHS3 Compliant | - | ||
| FDME1034CZT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипTC6320K6-GAnlielectronics Тип | Microchip Technology |
Trans Mosfet N/p-ch 200V 8-PIN SOIC T/r
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | - | Tin | Surface Mount | Surface Mount | 8-VDFN Exposed Pad | - | 8 | - | 37.393021mg | SILICON | - | 2 | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | - | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | - | - | - | DUAL | - | 260 | - | - | - | - | 40 | TC6320 | - | - | - | - | - | - | - | - | 2 | - | - | ENHANCEMENT MODE | - | - | 10 ns | - | N and P-Channel | SWITCHING | - | 7 Ω @ 1A, 10V | 2V @ 1mA | - | - | - | 110pF @ 25V | - | 15ns | - | - | N-CHANNEL AND P-CHANNEL | 15 ns | - | 5.2A | - | - | - | - | - | 7Ohm | 200V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | - | - | - | - | 1.37mm | 4.89mm | 3.91mm | - | No | - | ROHS3 Compliant | - | ||
| TC6320K6-G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBSL308CH6327XTSA1Anlielectronics Тип | Infineon Technologies |
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | - | - | Surface Mount | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | 6 | PG-TSOP-6-6 | - | - | 2.3A 2A | - | - | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | - | - | Active | 1 (Unlimited) | - | - | - | - | 150°C | -55°C | - | - | 500mW | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 500mW | N and P-Channel Complementary | - | - | 57mOhm @ 2.3A, 10V | 2V @ 11μA | Halogen Free | - | - | 275pF @ 15V | 1.5nC @ 10V | - | - | 30V | - | - | - | 2A | - | - | -30V | - | - | - | - | - | 275pF | - | - | - | Logic Level Gate, 4.5V Drive | 44mOhm | 57 mΩ | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| BSL308CH6327XTSA1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFDS6875Anlielectronics Тип | ON Semiconductor |
MOSFET 2P-CH 20V 6A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | 187mg | SILICON | 6A | 2 | 98 ns | -55°C~150°C TJ | Tape & Reel (TR) | - | PowerTrench® | e3 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 30mOhm | - | - | - | - | -20V | 2W | - | GULL WING | - | - | - | - | -6A | - | - | - | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 8 ns | 900mW | 2 P-Channel (Dual) | SWITCHING | - | 30m Ω @ 6A, 4.5V | 1.5V @ 250μA | - | - | - | 2250pF @ 10V | 31nC @ 5V | 15ns | - | 20V | - | 35 ns | - | -6A | -800mV | 8V | - | - | 6A | - | -20V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | 1.5mm | 5mm | 4mm | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDS6875 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRF7905TRPBFAnlielectronics Тип | Infineon Technologies |
MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | - | - | SILICON | 7.8A 8.9A | 2 | - | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 8 | EAR99 | - | Matte Tin (Sn) | - | - | - | - | 2W | - | GULL WING | - | - | - | - | - | - | IRF7905PBF | - | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | - | - | 2 N-Channel (Dual) | SWITCHING | - | 21.8m Ω @ 7.8A, 10V | 2.25V @ 25μA | - | - | - | 600pF @ 15V | 6.9nC @ 4.5V | - | - | - | - | 3.4 ns | - | 8.9A | - | 20V | - | - | - | 0.0171Ohm | 30V | 71A | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | 1.4986mm | 4.9784mm | 3.9878mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| IRF7905TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNTMD4N03R2GAnlielectronics Тип | ON Semiconductor |
MOSFET 2N-CH 30V 4A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 36 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | - | - | SILICON | - | 2 | 16 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | - | e3 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 48MOhm | - | - | - | - | 30V | 2W | - | GULL WING | 260 | - | - | - | 4A | 40 | NTMD4N03 | 8 | - | - | - | - | - | - | - | - | - | Dual | ENHANCEMENT MODE | 2W | - | 7 ns | - | 2 N-Channel (Dual) | SWITCHING | - | 60m Ω @ 4A, 10V | 3V @ 250μA | - | - | - | 400pF @ 20V | 16nC @ 10V | 14ns | - | - | - | 10 ns | - | 4A | - | 20V | - | - | 4A | - | 30V | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | 1.5mm | 5mm | 4mm | - | No | - | ROHS3 Compliant | Lead Free | ||
| NTMD4N03R2G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2N7002BKS,115Anlielectronics Тип | Nexperia USA Inc. |
MOSFET N, 60 V 0.5 A 295 mW SOT-363 | NXP 2N7002BKS115 (MOSFET N, 60 V 0.5 A 295 mW SOT-363 Transistors).
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | - | - | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | YES | - | - | - | SILICON | 300mA | 2 | - | 150°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | e3 | - | Active | 1 (Unlimited) | 6 | EAR99 | - | Tin (Sn) | - | - | LOGIC LEVEL COMPATIBLE | - | - | - | GULL WING | NOT SPECIFIED | - | - | - | - | NOT SPECIFIED | - | 6 | R-PDSO-G6 | - | - | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | - | 295mW | 2 N-Channel (Dual) | SWITCHING | - | 1.6 Ω @ 500mA, 10V | 2.1V @ 250μA | - | - | - | 50pF @ 10V | 0.6nC @ 4.5V | - | - | 60V | - | - | - | - | - | - | - | - | 0.3A | - | - | - | - | 60V | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| 2N7002BKS,115 |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ