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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Number of Outputs Efficiency Output Type Max Output Current Input Voltage-Nom Voltage Analog IC - Other Type Element Configuration Current Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max Max Output Voltage FET Type Transistor Application Rds On (Max) @ Id, Vgs Max Input Voltage Vgs(th) (Max) @ Id Halogen Free Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Supply Current-Max (Isup) Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Switcher Configuration Continuous Drain Current (ID) Threshold Voltage JEDEC-95 Code Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Max Junction Temperature (Tj) FET Feature Nominal Vgs Feedback Cap-Max (Crss) Height Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor FDMS9600S
Mfr. Тип
FDMS9600S
Anlielectronics Тип

ON Semiconductor
Trans MOSFET N-CH 30V 12A/16A 8-Pin MLP EP T/R
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 16 Weeks ACTIVE (Last Updated: 4 days ago) Gold Surface Mount Surface Mount 8-PowerWDFN - 8 9mg SILICON 12A 16A 2 54 ns -55°C~150°C TJ Tape & Reel (TR) 2017 PowerTrench® e4 yes Active 1 (Unlimited) 8 - EAR99 13MOhm - - - 1W - - - - - - - - - - - - - - - - - - Dual - ENHANCEMENT MODE 2.5W DRAIN - - - 2 N-Channel (Dual) SWITCHING 8.5m Ω @ 12A, 10V - 3V @ 250μA - 1705pF @ 15V 13nC @ 4.5V 11ns - - - 32 ns - 16A - - 20V - - 30V - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - 375 pF 825μm 5mm 6mm - No - ROHS3 Compliant Lead Free
    FDMS9600S
    FDMS9600S

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Texas Instruments CSD88537ND
    Mfr. Тип
    CSD88537ND
    Anlielectronics Тип

    		Texas Instruments
    MOSFET 2N-CH 60V 15A 8SOIC
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 6 Weeks ACTIVE (Last Updated: 4 days ago) Gold Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 540.001716mg SILICON - 2 9 ns -55°C~150°C TJ Tape & Reel (TR) - NexFET™ e4 yes Active 1 (Unlimited) 8 - EAR99 - - AVALANCHE RATED - 2.1W - GULL WING 260 - - - - CSD88537 - - - - - - - - - - Dual - ENHANCEMENT MODE 2.1W - 6 ns - - 2 N-Channel (Dual) SWITCHING 15m Ω @ 8A, 10V - 3.6V @ 250μA - 1400pF @ 30V 18nC @ 10V 15ns - 60V - 19 ns - 15A 3V - 20V 8A 0.019Ohm 60V - - - - METAL-OXIDE SEMICONDUCTOR - Standard - - 1.75mm 4.9mm 3.91mm 1.58mm No No SVHC ROHS3 Compliant Lead Free
      CSD88537ND
      CSD88537ND

      Texas Instruments
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Infineon Technologies IRF7910TRPBF
      Mfr. Тип
      IRF7910TRPBF
      Anlielectronics Тип

      		Infineon Technologies
      MOSFET 2N-CH 12V 10A 8SOIC
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 12 Weeks - Tin Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON - 2 16 ns -55°C~150°C TJ Tape & Reel (TR) 2002 HEXFET® e3 yes Not For New Designs 1 (Unlimited) 8 - - 15MOhm - - - 2W - GULL WING 260 - - - 30 IRF7910PBF - - - - - - - - - - Single - ENHANCEMENT MODE 2W - 9.4 ns - - 2 N-Channel (Dual) SWITCHING 15m Ω @ 8A, 4.5V - 2V @ 250μA - 1730pF @ 6V 26nC @ 4.5V 22ns - - - 6.3 ns - 10A - MS-012AA 12V - - 12V - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1.4986mm 4.9784mm 3.9878mm - No - ROHS3 Compliant Lead Free
        IRF7910TRPBF
        IRF7910TRPBF

        Infineon Technologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor FDMA2002NZ
        Mfr. Тип
        FDMA2002NZ
        Anlielectronics Тип

        		ON Semiconductor
        MOSFET 2N-CH 30V 2.9A 6-MICROFET
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 16 Weeks ACTIVE (Last Updated: 4 days ago) - Surface Mount Surface Mount 6-VDFN Exposed Pad - 6 40mg SILICON - 2 12 ns -55°C~150°C TJ Tape & Reel (TR) - PowerTrench® e4 yes Active 1 (Unlimited) 6 - EAR99 123MOhm Nickel/Palladium/Gold (Ni/Pd/Au) - 30V 650mW - - - - - 2.9A - - - - - - - - - - - - Dual - ENHANCEMENT MODE 1.5W DRAIN 6 ns - - 2 N-Channel (Dual) SWITCHING 123m Ω @ 2.9A, 4.5V - 1.5V @ 250μA - 220pF @ 15V 3nC @ 4.5V 8ns - - - 8 ns - 2.9A 1V - 12V - - 30V - - - - METAL-OXIDE SEMICONDUCTOR 150°C Logic Level Gate - 30 pF 850μm 2mm 2mm - No No SVHC ROHS3 Compliant Lead Free
          FDMA2002NZ
          FDMA2002NZ

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Infineon Technologies IRF7501TRPBF
          Mfr. Тип
          IRF7501TRPBF
          Anlielectronics Тип

          		Infineon Technologies
          MOSFET 2N-CH 20V 2.4A MICRO8
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 12 Weeks - - Surface Mount Surface Mount 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) - 8 - SILICON - 2 15 ns -55°C~150°C TJ Tape & Reel (TR) 2007 HEXFET® e3 - Active 1 (Unlimited) 8 - EAR99 135mOhm Matte Tin (Sn) ULTRA LOW RESISTANCE 20V 1.25W - GULL WING - - - 2.4A - IRF7501PBF - - - - - - - - - - Dual - ENHANCEMENT MODE 1.25W - 5.7 ns - - 2 N-Channel (Dual) SWITCHING 135m Ω @ 1.7A, 4.5V - 700mV @ 250μA - 260pF @ 15V 8nC @ 4.5V 24ns - - - 16 ns - 2.4A 700mV - 12V - - 20V 19A - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate 700 mV - 860μm 3mm 3mm - No No SVHC ROHS3 Compliant Lead Free
            IRF7501TRPBF
            IRF7501TRPBF

            Infineon Technologies
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            ON Semiconductor NTZD5110NT1G
            Mfr. Тип
            NTZD5110NT1G
            Anlielectronics Тип

            		ON Semiconductor
            MOSFET 2N-CH 60V 0.294A SOT563
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 4 Weeks ACTIVE (Last Updated: 4 days ago) Tin - Surface Mount SOT-563, SOT-666 YES 6 - SILICON - 2 63.7 ns -55°C~150°C TJ Tape & Reel (TR) 2007 - e3 yes Active 1 (Unlimited) 6 - EAR99 1.6Ohm - - - 900mW - FLAT 260 - - - 40 NTZD5110N 6 - - - - - - - - - Dual - ENHANCEMENT MODE 250mW - 12 ns - - 2 N-Channel (Dual) SWITCHING 1.6 Ω @ 500mA, 10V - 2.5V @ 250μA - 24.5pF @ 20V 0.7nC @ 4.5V 7.3ns - 60V - 7.3 ns - 294mA - - 20V - - 60V - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 600μm 1.7mm 1.3mm - No - ROHS3 Compliant Lead Free
              NTZD5110NT1G
              NTZD5110NT1G

              ON Semiconductor
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              Infineon Technologies IRFHS9351TRPBF
              Mfr. Тип
              IRFHS9351TRPBF
              Anlielectronics Тип

              		Infineon Technologies
              INFINEON IRFHS9351TRPBF Dual MOSFET, Dual P Channel, -5.1 A, -30 V, 0.135 ohm, -10 V, -1.8 VNew
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 12 Weeks - - Surface Mount Surface Mount 6-VQFN Exposed Pad - 6 - SILICON - 2 6.3 ns -55°C~150°C TJ Tape & Reel (TR) 2011 HEXFET® e3 - Active 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) HIGH RELIABILITY - 1.4W - - - - - - - IRFHS9351PBF - - - - - - - - - - Dual - ENHANCEMENT MODE 1.4W - 8.3 ns - - 2 P-Channel (Dual) SWITCHING 170m Ω @ 3.1A, 10V - 2.4V @ 10μA - 160pF @ 25V 3.7nC @ 10V 30ns - 30V - 7.9 ns - 2.3A -1.8V - 20V 5.1A 0.17Ohm -30V - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate -1.8 V - - - - - No No SVHC ROHS3 Compliant Lead Free
                IRFHS9351TRPBF
                IRFHS9351TRPBF

                Infineon Technologies
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                ON Semiconductor FDS6910
                Mfr. Тип
                FDS6910
                Anlielectronics Тип

                		ON Semiconductor
                MOSFET 2N-CH 30V 7.5A 8SOIC
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 10 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON - 2 26 ns -55°C~150°C TJ Tape & Reel (TR) 2004 PowerTrench® e3 yes Active 1 (Unlimited) 8 SMD/SMT EAR99 13MOhm Tin (Sn) - 30V 1.6W - GULL WING - - - 7.5A - - - - - - - - - - 30V - Dual 75A ENHANCEMENT MODE 1.6W - 9 ns 900mW - 2 N-Channel (Dual) SWITCHING 13m Ω @ 7.5A, 10V - 3V @ 250μA - 1130pF @ 15V 24nC @ 10V 5ns - - - 5 ns - 7.5A 1.8V - 20V - - 30V - 30V - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate 1.8 V - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                  FDS6910
                  FDS6910

                  ON Semiconductor
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Diodes Incorporated DMHC3025LSD-13
                  Mfr. Тип
                  DMHC3025LSD-13
                  Anlielectronics Тип

                  		Diodes Incorporated
                  MOSFET 2N/2P-CH 30V 8SO
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 18 Weeks - Tin Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 73.992255mg SILICON 6A 4.2A 4 28.2 ns -55°C~150°C TJ Cut Tape (CT) 2013 - e3 yes Active 1 (Unlimited) 8 - EAR99 - - HIGH RELIABILITY - 1.5W DUAL GULL WING 260 - - - 40 DMHC3025LSD - AEC-Q101 - - - - - - - - - - ENHANCEMENT MODE 1.5W - 7.5 ns - - 2 N and 2 P-Channel (H-Bridge) SWITCHING 25m Ω @ 5A, 10V - 2V @ 250μA - 590pF @ 15V 11.7nC @ 10V 4.9ns - 30V N-CHANNEL AND P-CHANNEL 13.5 ns - 4.2A 2V - 20V 6A 0.025Ohm -30V 60A - - - METAL-OXIDE SEMICONDUCTOR 150°C Logic Level Gate - - 1.7mm 4.95mm 3.95mm - - No SVHC ROHS3 Compliant Lead Free
                    DMHC3025LSD-13
                    DMHC3025LSD-13

                    Diodes Incorporated
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies IRFHM8363TRPBF
                    Mfr. Тип
                    IRFHM8363TRPBF
                    Anlielectronics Тип

                    		Infineon Technologies
                    MOSFET 2N-CH 30V 11A 8PQFN
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 - - - Surface Mount Surface Mount 8-PowerVDFN - 8 - SILICON - 2 12 ns -55°C~150°C TJ Tape & Reel (TR) 2013 HEXFET® e3 - Not For New Designs 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) HIGH RELIABILITY - 2.7W - - - - - - - IRFHM8363PBF - - - - - - - - - - Dual - ENHANCEMENT MODE 2.7W DRAIN 14 ns - - 2 N-Channel (Dual) SWITCHING 14.9m Ω @ 10A, 10V - 2.35V @ 25μA - 1165pF @ 10V 15nC @ 10V 94ns - 30V - 33 ns - 11A 1.8V - 20V - 0.0149Ohm 30V 116A - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate 1.8 V - - - - - No No SVHC ROHS3 Compliant Lead Free
                      IRFHM8363TRPBF
                      IRFHM8363TRPBF

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ON Semiconductor FDC6306P
                      Mfr. Тип
                      FDC6306P
                      Anlielectronics Тип

                      		ON Semiconductor
                      MOSFET 2P-CH 20V 1.9A SSOT6
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 10 Weeks ACTIVE (Last Updated: 2 days ago) Tin Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 36mg SILICON - 2 14 ns -55°C~150°C TJ Tape & Reel (TR) 1999 PowerTrench® e3 yes Active 1 (Unlimited) 6 - EAR99 170mOhm - - -20V 960mW - GULL WING - - - -1.9A - - - - - - - - - - - - Dual - ENHANCEMENT MODE 960mW - 6 ns 700mW - 2 P-Channel (Dual) SWITCHING 170m Ω @ 1.9A, 4.5V - 1.5V @ 250μA - 441pF @ 10V 4.2nC @ 4.5V 9ns - 20V - 9 ns - 1.9A -900mV - 8V - - -20V - -20V - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate -900 mV - 1mm 3mm 1.7mm - No No SVHC ROHS3 Compliant Lead Free
                        FDC6306P
                        FDC6306P

                        ON Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor NVMFD5853NLT1G
                        Mfr. Тип
                        NVMFD5853NLT1G
                        Anlielectronics Тип

                        		ON Semiconductor
                        MOSFET NFET SO8FL 40V 29A 10MOHM
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 13 Weeks ACTIVE, NOT REC (Last Updated: 2 days ago) - - Surface Mount 8-PowerTDFN YES 8 - SILICON - 2 22 ns -55°C~175°C TJ Tape & Reel (TR) 2013 - e3 yes Not For New Designs 1 (Unlimited) 6 - EAR99 - Tin (Sn) - - 3W - FLAT - - - - - - 8 AEC-Q101 R-PDSO-F6 - - - - - - - Dual - ENHANCEMENT MODE - DRAIN 10 ns - - 2 N-Channel (Dual) - 10m Ω @ 15A, 10V - 2.4V @ 250μA Halogen Free 1100pF @ 25V 23nC @ 10V - - 40V - - - 12A - - 20V 34A 0.015Ohm 40V 165A - - 40 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1.05mm 6.1mm 5.1mm - No - ROHS3 Compliant Lead Free
                          NVMFD5853NLT1G
                          NVMFD5853NLT1G

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor SI4532DY
                          Mfr. Тип
                          SI4532DY
                          Anlielectronics Тип

                          		ON Semiconductor
                          Trans MOSFET N/P-CH 30V 3.9A/3.5A 8-Pin SOIC N T/R
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 8 Weeks ACTIVE (Last Updated: 16 hours ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 230.4mg SILICON 3.9A 3.5A 2 18 ns -55°C~150°C TJ Tape & Reel (TR) 2017 - e3 yes Active 1 (Unlimited) 8 - EAR99 65MOhm Tin (Sn) - 30V 2W DUAL GULL WING - - - 3.9A - SI4532D - - - - - - - - - - - - ENHANCEMENT MODE 2W - 18 ns 900mW - N and P-Channel SWITCHING 65m Ω @ 3.9A, 10V - 3V @ 250μA - 235pF @ 10V 15nC @ 10V 8ns - - N-CHANNEL AND P-CHANNEL 6 ns - 3.9A 3V - 20V - - 30V - - - - METAL-OXIDE SEMICONDUCTOR - Standard 3 V - 1.5mm 5mm 4mm - No No SVHC ROHS3 Compliant Lead Free
                            SI4532DY
                            SI4532DY

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            ON Semiconductor NTMFD4902NFT1G
                            Mfr. Тип
                            NTMFD4902NFT1G
                            Anlielectronics Тип

                            		ON Semiconductor
                            MOSFET NFET SO8FL 30V 10.8A 7MO
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 17 Weeks ACTIVE (Last Updated: 1 day ago) Tin - Surface Mount 8-PowerTDFN YES 8 - SILICON 10.3A 13.3A 2 - -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 yes Active 1 (Unlimited) 8 - EAR99 - - - - 1.16W - FLAT - - - - - - 8 - - - - - - - - - Dual - ENHANCEMENT MODE - DRAIN SOURCE - 1.1W 1.16W - 2 N-Channel (Dual), Schottky SWITCHING 6.5m Ω @ 10A, 10V - 2.2V @ 250μA - 1150pF @ 15V 9.7nC @ 4.5V - - 30V - - - 13.3A - - 20V 13.5A 0.01Ohm - 60A - 30V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - No - ROHS3 Compliant Lead Free
                              NTMFD4902NFT1G
                              NTMFD4902NFT1G

                              ON Semiconductor
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              STMicroelectronics STS5DNF60L
                              Mfr. Тип
                              STS5DNF60L
                              Anlielectronics Тип

                              		STMicroelectronics
                              Trans MOSFET N-CH 60V 5A Automotive 8-Pin SO N T/R
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 12 Weeks ACTIVE (Last Updated: 8 months ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON - 2 45 ns -55°C~150°C TJ Tape & Reel (TR) - Automotive, AEC-Q101, STripFET™ II e3 - Active 3 (168 Hours) 8 - EAR99 - Tin (Sn) LOW THRESHOLD - 2W - GULL WING 260 - - - - STS5D 8 - - - - - - - - - - - ENHANCEMENT MODE 2W - 15 ns - - 2 N-Channel (Dual) SWITCHING 45m Ω @ 2A, 10V - 2.5V @ 250μA - 1030pF @ 25V 15nC @ 4.5V 28ns - 60V - 10 ns - 5A - - 15V 5A 0.055Ohm - - - 60V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - No - ROHS3 Compliant Lead Free
                                STS5DNF60L
                                STS5DNF60L

                                STMicroelectronics
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Infineon Technologies AUIRF7313QTR
                                Mfr. Тип
                                AUIRF7313QTR
                                Anlielectronics Тип

                                		Infineon Technologies
                                MOSFET 2N-CH 30V 6.5A 8SOIC
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 8 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON - 2 21 ns -55°C~175°C TJ Tape & Reel (TR) 2011 HEXFET® - - Active 1 (Unlimited) 8 - EAR99 - - - - 2.4W - GULL WING - - - - - - - AEC-Q101 - - - - - - - - - - ENHANCEMENT MODE 2.4W - 3.7 ns - - 2 N-Channel (Dual) SWITCHING 29m Ω @ 6.9A, 10V - 3V @ 250μA - 755pF @ 25V 33nC @ 10V 7.3ns - 30V - 11 ns - 6.9A 3V - 20V - - 30V - - - 450 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - No No SVHC ROHS3 Compliant -
                                  AUIRF7313QTR
                                  AUIRF7313QTR

                                  Infineon Technologies
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  ON Semiconductor FDS9958-F085
                                  Mfr. Тип
                                  FDS9958-F085
                                  Anlielectronics Тип

                                  		ON Semiconductor
                                  MOSFET 2P-CH 60V 2.9A 8-SOIC
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 4 Weeks ACTIVE (Last Updated: 1 week ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 230.4mg SILICON - 2 27 ns -55°C~150°C TJ Tape & Reel (TR) 2017 Automotive, AEC-Q101, PowerTrench® - yes Active 1 (Unlimited) 8 - - - - - - 900mW - GULL WING - - - - - - - - - - - - - - - - Dual - ENHANCEMENT MODE 2W - 6 ns - - 2 P-Channel (Dual) SWITCHING 105m Ω @ 2.9A, 10V - 3V @ 250μA - 1020pF @ 30V 23nC @ 10V 3ns - 60V - 6 ns - 2.9A - - 20V - 0.105Ohm -60V 12A - - 54 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - No - ROHS3 Compliant -
                                    FDS9958-F085
                                    FDS9958-F085

                                    ON Semiconductor
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ON Semiconductor NTUD3170NZT5G
                                    Mfr. Тип
                                    NTUD3170NZT5G
                                    Anlielectronics Тип

                                    		ON Semiconductor
                                    MOSFET 2N-CH 20V 0.22A SOT-963
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 8 Weeks ACTIVE (Last Updated: 5 days ago) Tin - Surface Mount SOT-963 YES 6 - SILICON 220mA 2 142 ns -55°C~150°C TJ Tape & Reel (TR) 2005 - e3 yes Active 1 (Unlimited) 6 - EAR99 1.5Ohm - - - 125mW - FLAT - - - - - NTUD3170NZ 6 - - - - - - - - - Dual - ENHANCEMENT MODE 200mW - 16.5 ns - - 2 N-Channel (Dual) SWITCHING 1.5 Ω @ 100mA, 4.5V - 1V @ 250μA - 12.5pF @ 15V - 25.5ns - - - 80 ns - 280mA 1V - 8V - - 20V - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 400μm 1.05mm 850μm - No No SVHC ROHS3 Compliant Lead Free
                                      NTUD3170NZT5G
                                      NTUD3170NZT5G

                                      ON Semiconductor
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
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                                      Infineon Technologies IRFH4253DTRPBF
                                      Mfr. Тип
                                      IRFH4253DTRPBF
                                      Anlielectronics Тип

                                      		Infineon Technologies
                                      MOSFET 2N-CH 25V 64A/145A PQFN
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                                        		 14 Weeks - - Surface Mount Surface Mount 8-PowerVDFN - 8 - - 64A 145A 2 - -55°C~150°C TJ Tape & Reel (TR) 2013 HEXFET® - - Not For New Designs 1 (Unlimited) - - EAR99 - - - - 50W - - - - - - - - - - - - - - - - - - Dual - - - - - 31W 50W - 2 N-Channel (Dual) - 3.2m Ω @ 30A, 10V - 2.1V @ 35μA - 1314pF @ 13V 15nC @ 4.5V - - 25V - - - 145A 1.6V - 20V 35A - - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 900μm 6mm 5mm - No No SVHC ROHS3 Compliant Lead Free
                                        IRFH4253DTRPBF
                                        IRFH4253DTRPBF

                                        Infineon Technologies
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                                        Texas Instruments CSD87330Q3D
                                        Mfr. Тип
                                        CSD87330Q3D
                                        Anlielectronics Тип

                                        		Texas Instruments
                                        MOSFET 2N-CH 30V 20A 8SON
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 12 Weeks ACTIVE (Last Updated: 1 day ago) Gold Surface Mount Surface Mount 8-PowerLDFN - 8 - - - - 9.1 ns -55°C~150°C TJ Cut Tape (CT) - NexFET™ e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - 6W - - 260 1 0.65mm - - CSD87330 8 - - 1 90 % Adjustable 15A 12V - SWITCHING CONTROLLER Dual - - 6W - - - 1.2V 2 N-Channel (Half Bridge) - - 27V 2.1V @ 250μA - 900pF @ 15V 5.8nC @ 4.5V 7.5ns 20mA 30V - 1.6 ns PUSH-PULL 20A 1V - 1.15V - - 30V - - - - - - Logic Level Gate - - 1.5mm 3.3mm 3.3mm 1.5mm No No SVHC ROHS3 Compliant Contains Lead
                                          CSD87330Q3D
                                          CSD87330Q3D

                                          Texas Instruments
                                          RoHS :
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                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: FDMS9600S,CSD88537ND,IRF7910TRPBF,FDMA2002NZ,IRF7501TRPBF.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.