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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Resistance Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Qualification Status Configuration Number of Channels Element Configuration Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max FET Type Transistor Application Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Halogen Free Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) Dual Supply Voltage Input Capacitance DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Max Junction Temperature (Tj) FET Feature Drain to Source Resistance Rds On Max Nominal Vgs Feedback Cap-Max (Crss) Height Length Width Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor FDY4000CZ
Mfr. Тип
FDY4000CZ
Anlielectronics Тип

ON Semiconductor
MOSFET N/P-CH 20V SC89-6
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 10 Weeks ACTIVE (Last Updated: 1 day ago) Tin Surface Mount Surface Mount SOT-563, SOT-666 - 6 - 32mg SILICON 600mA 350mA 2 8 ns -55°C~150°C TJ Tape & Reel (TR) 2006 PowerTrench® e3 yes Active 1 (Unlimited) 6 - EAR99 700MOhm - - - ESD PROTECTED 600V 625mW - FLAT - 600mA - - - - - - - - Dual ENHANCEMENT MODE 625mW - - 446mW N and P-Channel SWITCHING 700m Ω @ 600mA, 4.5V 1.5V @ 250μA - 60pF @ 10V 1.1nC @ 4.5V 13ns 20V N-CHANNEL AND P-CHANNEL 13 ns 600mA 600mV 8V - - - -20V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 500μm 1.6mm 1.2mm No No SVHC ROHS3 Compliant Lead Free
    FDY4000CZ
    FDY4000CZ

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    Infineon Technologies AUIRF7342QTR
    Mfr. Тип
    AUIRF7342QTR
    Anlielectronics Тип

    		Infineon Technologies
    MOSFET 2P-CH 55V 3.4A 8SOIC
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 10 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON - 2 43 ns -55°C~150°C TJ Tape & Reel (TR) 2011 Automotive, AEC-Q101, HEXFET® - - Not For New Designs 1 (Unlimited) 8 - EAR99 - - - - AVALANCHE RATED, HIGH RELIABILITY - 2W - GULL WING - - - - - - - - - - Dual ENHANCEMENT MODE 2W - 14 ns - 2 P-Channel (Dual) SWITCHING 105m Ω @ 3.4A, 10V 3V @ 250μA - 690pF @ 25V 38nC @ 10V 10ns 55V - 22 ns 3.4A -1V 20V - - 0.105Ohm -55V - - - - 114 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 1.5mm 5mm 4mm No No SVHC ROHS3 Compliant -
      AUIRF7342QTR
      AUIRF7342QTR

      Infineon Technologies
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      ON Semiconductor NTJD4105CT1G
      Mfr. Тип
      NTJD4105CT1G
      Anlielectronics Тип

      		ON Semiconductor
      MOSFET N/P-CH 20V/8V SOT-363
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 19 Weeks ACTIVE (Last Updated: 20 hours ago) - - Surface Mount 6-TSSOP, SC-88, SOT-363 YES 6 - - SILICON 630mA 775mA 2 50 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Active 1 (Unlimited) 6 - EAR99 220mOhm Tin (Sn) - - - - 270mW - GULL WING 260 630mA 40 NTJD4105C 6 - - - - - Dual ENHANCEMENT MODE 550mW - 83 ns - N and P-Channel SWITCHING 375m Ω @ 630mA, 4.5V 1.5V @ 250μA - 46pF @ 20V 3nC @ 4.5V 23ns 20V 8V N-CHANNEL AND P-CHANNEL 36 ns 775mA 920mV 8V - - - -8V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 920 mV 5 pF 1mm 2.2mm 1.35mm No No SVHC ROHS3 Compliant Lead Free
        NTJD4105CT1G
        NTJD4105CT1G

        ON Semiconductor
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        Diodes Incorporated DMG6601LVT-7
        Mfr. Тип
        DMG6601LVT-7
        Anlielectronics Тип

        		Diodes Incorporated
        MOSFET N/P-CH 30V 26TSOT
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 15 Weeks - Gold Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 26 - - SILICON 3.8A 2.5A 2 18.3 ns -55°C~150°C TJ Cut Tape (CT) 2009 - e3 yes Active 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - 850mW DUAL GULL WING 260 - NOT SPECIFIED DMG6601 - AEC-Q101 R-PDSO-G6 - - 2 - ENHANCEMENT MODE 850mW - 1.7 ns - N and P-Channel SWITCHING 55m Ω @ 3.4A, 10V 1.5V @ 250μA - 422pF @ 15V 12.3nC @ 10V 4.6ns - N-CHANNEL AND P-CHANNEL 2.2 ns 2.5A - 12V - 3.8A 0.055Ohm 30V - - - - - METAL-OXIDE SEMICONDUCTOR 150°C Logic Level Gate - - - - 1mm 2.9mm 1.6mm - No SVHC ROHS3 Compliant Lead Free
          DMG6601LVT-7
          DMG6601LVT-7

          Diodes Incorporated
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          ON Semiconductor NTHD4102PT1G
          Mfr. Тип
          NTHD4102PT1G
          Anlielectronics Тип

          		ON Semiconductor
          MOSFET 2P-CH 20V 2.9A CHIPFET
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 7 Weeks ACTIVE (Last Updated: 8 hours ago) - - Surface Mount 8-SMD, Flat Lead YES 8 - 4.535924g SILICON 2.9A 2 32 ns -55°C~150°C TJ Tape & Reel (TR) 2000 - e3 yes Active 1 (Unlimited) 8 - EAR99 64MOhm Tin (Sn) - - LOGIC LEVEL COMPATIBLE -20V 1.1W - C BEND 260 -7.3A 40 NTHD4102P 8 - - - - - Dual ENHANCEMENT MODE 1.1W - 5.5 ns - 2 P-Channel (Dual) SWITCHING 80m Ω @ 2.9A, 4.5V 1.5V @ 250μA - 750pF @ 16V 8.6nC @ 4.5V 12ns 20V - 12 ns 4.1A -1.5V 8V - - - -20V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - -1.5 V - 1.1mm 3.1mm 1.7mm No No SVHC ROHS3 Compliant Lead Free
            NTHD4102PT1G
            NTHD4102PT1G

            ON Semiconductor
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Infineon Technologies IPG20N06S2L35AATMA1
            Mfr. Тип
            IPG20N06S2L35AATMA1
            Anlielectronics Тип

            		Infineon Technologies
            MOSFET 2N-CH 8TDSON
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 10 Weeks - - Surface Mount Surface Mount, Wettable Flank 8-PowerVDFN - 8 PG-TDSON-8-10 - - 2A Tc 2 - -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ - - Active 1 (Unlimited) - - - - - 175°C -55°C - - 65W - - - - - - - - - - - - - - 65W - - 65W 2 N-Channel (Dual) - 35mOhm @ 15A, 10V 2V @ 27μA Halogen Free 790pF @ 25V 23nC @ 10V - 55V - - 20A - 20V 55V - - - - - 790pF - - - - Logic Level Gate 28mOhm 35 mΩ - - - - - - - ROHS3 Compliant Contains Lead
              IPG20N06S2L35AATMA1
              IPG20N06S2L35AATMA1

              Infineon Technologies
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor NTLJD3115PT1G
              Mfr. Тип
              NTLJD3115PT1G
              Anlielectronics Тип

              		ON Semiconductor
              MOSFET 2P-CH 20V 2.3A 6-WDFN
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 9 Weeks ACTIVE (Last Updated: 3 days ago) Tin - Surface Mount 6-WDFN Exposed Pad YES 6 - - SILICON 2.3A 2 19.8 ns -55°C~150°C TJ Tape & Reel (TR) 2006 - e3 yes Active 1 (Unlimited) 6 - EAR99 100MOhm - - - LOGIC LEVEL COMPATIBLE -20V 710mW - C BEND 260 -4.1A 40 NTLJD3115P 6 - - - - - Dual ENHANCEMENT MODE 1.5W DRAIN 6 ns - 2 P-Channel (Dual) SWITCHING 100m Ω @ 2A, 4.5V 1V @ 250μA - 531pF @ 10V 6.2nC @ 4.5V 15ns - - 15 ns 3.3A - 8V - - - 20V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 750μm 2mm 2mm No - ROHS3 Compliant Lead Free
                NTLJD3115PT1G
                NTLJD3115PT1G

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Diodes Incorporated DMN3033LSD-13
                Mfr. Тип
                DMN3033LSD-13
                Anlielectronics Тип

                		Diodes Incorporated
                MOSFET 2N-CH 30V 6.9A 8-SOIC
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 15 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 850.995985mg SILICON - 2 63 ns -55°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) 8 - EAR99 22mOhm Matte Tin (Sn) - - HIGH RELIABILITY - 2W - GULL WING 260 - 40 - 8 - - - - - - ENHANCEMENT MODE 2W - 11 ns - 2 N-Channel (Dual) SWITCHING 20m Ω @ 6.9A, 10V 2.1V @ 250μA - 725pF @ 15V 13nC @ 10V 7ns 30V - 30 ns 6.9A - 20V - - - 30V 30A - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 1.5mm 5.3mm 4.1mm No No SVHC ROHS3 Compliant Lead Free
                  DMN3033LSD-13
                  DMN3033LSD-13

                  Diodes Incorporated
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Infineon Technologies AUIRF7316QTR
                  Mfr. Тип
                  AUIRF7316QTR
                  Anlielectronics Тип

                  		Infineon Technologies
                  MOSFET 2P-CH 30V 4.9A 8SOIC
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 8 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - - SILICON - 2 34 ns -55°C~150°C TJ Tape & Reel (TR) 2011 HEXFET® e3 - Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE - 2W - GULL WING - - - - - - - - - - Dual ENHANCEMENT MODE 2W - 13 ns - 2 P-Channel (Dual) SWITCHING 58m Ω @ 4.9A, 10V 3V @ 250μA - 710pF @ 25V 34nC @ 10V 13ns 30V - 32 ns -4.9A -1V 20V - - - -30V 30A - - - 140 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 1.5mm 5mm 4mm No No SVHC ROHS3 Compliant -
                    AUIRF7316QTR
                    AUIRF7316QTR

                    Infineon Technologies
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Diodes Incorporated DMC2038LVTQ-7
                    Mfr. Тип
                    DMC2038LVTQ-7
                    Anlielectronics Тип

                    		Diodes Incorporated
                    MOSFET BVDSS: 8V 24V TSOT26
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 14 Weeks - - - Surface Mount SOT-23-6 Thin, TSOT-23-6 YES - - - SILICON 3.7A Ta 2.6A Ta 2 - -55°C~150°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101 e3 yes Not For New Designs 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - - DUAL GULL WING 260 - 40 - - - R-PDSO-G6 - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - ENHANCEMENT MODE - - - 800mW Ta N and P-Channel Complementary SWITCHING 35m Ω @ 4A, 4.5V, 74m Ω @ 3A, 4.5V 1V @ 250μA - 530pF @ 10V 705pF @ 10V 5.7nC @ 4.5V, 10nC @ 4.5V - 20V N-CHANNEL AND P-CHANNEL - - - - - 3.7A 0.035Ohm - - - - 20V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate, 1.8V Drive - - - 100 pF - - - - No SVHC ROHS3 Compliant -
                      DMC2038LVTQ-7
                      DMC2038LVTQ-7

                      Diodes Incorporated
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ON Semiconductor FDG8842CZ
                      Mfr. Тип
                      FDG8842CZ
                      Anlielectronics Тип

                      		ON Semiconductor
                      Trans MOSFET N/P-CH 30V/25V 0.75A/0.41A 6-Pin SC-70 T/R
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 10 Weeks ACTIVE (Last Updated: 2 days ago) Tin Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 - 28mg SILICON 750mA 410mA 2 35 ns -55°C~150°C TJ Tape & Reel (TR) 2007 PowerTrench® e3 yes Active 1 (Unlimited) 6 SMD/SMT EAR99 400MOhm - - - - - 300mW - GULL WING NOT SPECIFIED - NOT SPECIFIED - - - - Not Qualified - - Dual ENHANCEMENT MODE 360mW - - - N and P-Channel SWITCHING 400m Ω @ 750mA, 4.5V 1.5V @ 250μA - 120pF @ 10V 1.44nC @ 4.5V 16ns 30V 25V N-CHANNEL AND P-CHANNEL 16 ns 750mA 1V -8V - 0.75A - 25V - 30V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 1 V - 1mm 2mm 1.25mm - No SVHC ROHS3 Compliant Lead Free
                        FDG8842CZ
                        FDG8842CZ

                        ON Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        Diodes Incorporated DMC3400SDW-7
                        Mfr. Тип
                        DMC3400SDW-7
                        Anlielectronics Тип

                        		Diodes Incorporated
                        MOSFET N/P-CH 30V SOT363
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 15 Weeks - - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - - - - SILICON 650mA 450mA 2 - -55°C~150°C TJ Tape & Reel (TR) 2015 - e3 - Active 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) - - - - 310mW DUAL GULL WING 260 - 30 - - - R-PDSO-G6 - - 2 - ENHANCEMENT MODE 310mW - - - N and P-Channel SWITCHING 400m Ω @ 590mA, 10V 1.6V @ 250μA - 55pF @ 15V 1.4nC @ 10V - 30V N-CHANNEL AND P-CHANNEL - 450mA - 20V - 0.65A 0.4Ohm - - - - 30V - METAL-OXIDE SEMICONDUCTOR 150°C Standard - - - - 1.1mm - - - - ROHS3 Compliant -
                          DMC3400SDW-7
                          DMC3400SDW-7

                          Diodes Incorporated
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          Diodes Incorporated DMC3021LSD-13
                          Mfr. Тип
                          DMC3021LSD-13
                          Anlielectronics Тип

                          		Diodes Incorporated
                          MOSFET N/P-CH 30V 8.5A/7A 8SO
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 16 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON 8.5A 7A 2 50.1 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - 2.5W DUAL GULL WING 260 - 40 DMC3021 8 - - - - - - ENHANCEMENT MODE 2.5W - - - N and P-Channel SWITCHING 21m Ω @ 7A, 10V 2.1V @ 250μA - 767pF @ 10V 16.1nC @ 10V - 30V N-CHANNEL AND P-CHANNEL - 8.5A - 20V - - - - - - - 30V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 1.5mm 4.95mm 3.95mm No No SVHC ROHS3 Compliant -
                            DMC3021LSD-13
                            DMC3021LSD-13

                            Diodes Incorporated
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Diodes Incorporated DMN3190LDW-7
                            Mfr. Тип
                            DMN3190LDW-7
                            Anlielectronics Тип

                            		Diodes Incorporated
                            MOSFET 2N-CH 30V 1A SOT363
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 15 Weeks - - Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 - 6.010099mg SILICON - 2 30.3 ns -55°C~150°C TJ Tape & Reel (TR) 2013 - e3 yes Active 1 (Unlimited) 6 - EAR99 - Matte Tin (Sn) - - HIGH RELIABILITY - 320mW - GULL WING 260 - - - 6 AEC-Q101 - - - 2 Dual ENHANCEMENT MODE - - 4.5 ns - 2 N-Channel (Dual) SWITCHING 190m Ω @ 1.3A, 10V 2.8V @ 250μA - 87pF @ 20V 2nC @ 10V 8.9ns 30V - 15.6 ns 1A - 20V - 1A 0.19Ohm - - - - 30V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 1mm 2.2mm 1.35mm No - ROHS3 Compliant Lead Free
                              DMN3190LDW-7
                              DMN3190LDW-7

                              Diodes Incorporated
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              ON Semiconductor FDS4559-F085
                              Mfr. Тип
                              FDS4559-F085
                              Anlielectronics Тип

                              		ON Semiconductor
                              MOSFET N/P-CH 60V 4.5A/3.5A 8-SO
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 - ACTIVE (Last Updated: 1 week ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 230.4mg SILICON 4.5A 3.5A 2 19 ns -55°C~150°C TJ Tape & Reel (TR) 2002 Automotive, AEC-Q101, PowerTrench® - yes Active 1 (Unlimited) 8 - - - - - - - - 2W DUAL GULL WING - - - - - - - - - - - ENHANCEMENT MODE 2W - - - N and P-Channel SWITCHING 55m Ω @ 4.5A, 10V 3V @ 250μA - 650pF @ 25V 18nC @ 10V 10ns - N-CHANNEL 12 ns 3.5A - 20V - 4.5A 0.055Ohm 60V - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - No - ROHS3 Compliant Lead Free
                                FDS4559-F085
                                FDS4559-F085

                                ON Semiconductor
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                Diodes Incorporated DMG4800LSD-13
                                Mfr. Тип
                                DMG4800LSD-13
                                Anlielectronics Тип

                                		Diodes Incorporated
                                MOSFET 2N-CH 30V 7.5A 8SO
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 16 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON - 2 26.33 ns -55°C~150°C TJ Cut Tape (CT) 2011 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - annealed - - HIGH RELIABILITY - 1.17W - GULL WING 260 - 40 DMG4800LSD 8 - - - - - Dual ENHANCEMENT MODE 1.17W - 5.03 ns - 2 N-Channel (Dual) SWITCHING 16m Ω @ 9A, 10V 1.6V @ 250μA - 798pF @ 10V 8.56nC @ 5V 4.5ns 30V - 8.55 ns 7.5A 1.6V 25V - - 0.016Ohm 30V - - - - - METAL-OXIDE SEMICONDUCTOR 150°C Logic Level Gate - - - - 1.7mm 4.95mm 3.95mm No No SVHC ROHS3 Compliant Lead Free
                                  DMG4800LSD-13
                                  DMG4800LSD-13

                                  Diodes Incorporated
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Diodes Incorporated DMC2020USD-13
                                  Mfr. Тип
                                  DMC2020USD-13
                                  Anlielectronics Тип

                                  		Diodes Incorporated
                                  MOSFET N/P-CH 20V 7.8A/6.3A 8SO
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 16 Weeks - - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - 73.992255mg SILICON 7.8A 6.3A 2 94.1 ns -55°C~150°C TJ Tape & Reel (TR) 2011 - e3 yes Active 1 (Unlimited) 8 - EAR99 - Matte Tin (Sn) - - - - 1.8W DUAL GULL WING 260 - 40 - 8 - - - - - - ENHANCEMENT MODE - - - - N and P-Channel SWITCHING 20m Ω @ 7A, 4.5V 1.5V @ 250μA - 1149pF @ 10V 11.6nC @ 4.5V - - N-CHANNEL AND P-CHANNEL - 6.3A - 10V - 6.5A - 20V 33.6A - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 1.5mm 5mm 4mm No No SVHC ROHS3 Compliant Lead Free
                                    DMC2020USD-13
                                    DMC2020USD-13

                                    Diodes Incorporated
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    ON Semiconductor EFC6601R-TR
                                    Mfr. Тип
                                    EFC6601R-TR
                                    Anlielectronics Тип

                                    		ON Semiconductor
                                    Dual N-Channel Power MOSFET, 24V, 13A, 11.5mO
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
                                      		 13 Weeks - - - Surface Mount 6-XFBGA, FCBGA - 6 - 68.407399mg - - - 53 μs 150°C TJ Tape & Reel (TR) 2007 - - yes Active 1 (Unlimited) - - EAR99 - - - - - - 2W - - - - - - 6 - - - - - Dual - - - 280 ns - 2 N-Channel (Dual) - - - Halogen Free - 48nC @ 4.5V 630ns 24V - 47 μs 13A - 12V - - - - - - - - - - - Logic Level Gate, 2.5V Drive 11.5mOhm - - - - - - - - ROHS3 Compliant Lead Free
                                      EFC6601R-TR
                                      EFC6601R-TR

                                      ON Semiconductor
                                      RoHS :
                                      Инкапсуляция : -
                                      Есть складские запасы : -
                                      1 : -
                                      ON Semiconductor NTLUD3A260PZTAG
                                      Mfr. Тип
                                      NTLUD3A260PZTAG
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      IGBT Transistors POWER MOSFET 20V 2A 200 M
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 8 Weeks ACTIVE (Last Updated: 23 hours ago) Tin - Surface Mount 6-UFDFN Exposed Pad YES 6 - - SILICON 1.3A 2 149 ns -55°C~150°C TJ Tape & Reel (TR) 2010 - e3 yes Active 1 (Unlimited) 6 - EAR99 - - - - - - 500mW - - - - - - 6 - - - - - Dual ENHANCEMENT MODE 800mW DRAIN 17.4 ns - 2 P-Channel (Dual) SWITCHING 200m Ω @ 2A, 4.5V 1V @ 250μA - 300pF @ 10V 4.2nC @ 4.5V 32.3ns 20V - 74 ns 1.7A - 8V - 1.3A - - - - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - 500μm 1.6mm 1.6mm No - ROHS3 Compliant Lead Free
                                        NTLUD3A260PZTAG
                                        NTLUD3A260PZTAG

                                        ON Semiconductor
                                        RoHS :
                                        Инкапсуляция : -
                                        Есть складские запасы : -
                                        1 : -
                                        Diodes Incorporated DMG1029SV-7
                                        Mfr. Тип
                                        DMG1029SV-7
                                        Anlielectronics Тип

                                        		Diodes Incorporated
                                        MOSFET N/P-CH 60V SOT563
                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 16 Weeks - - Surface Mount Surface Mount SOT-563, SOT-666 - 6 - 3.005049mg SILICON 500mA 360mA 2 10.6 ns -55°C~150°C TJ Tape & Reel (TR) 2013 - e3 yes Active 1 (Unlimited) 6 - EAR99 4Ohm Matte Tin (Sn) - - HIGH RELIABILITY, LOW THRESHOLD - 450mW DUAL FLAT 260 - 40 DMG1029 6 - - - - - - ENHANCEMENT MODE 450mW - 5.5 ns - N and P-Channel SWITCHING 1.7 Ω @ 500mA, 10V 2.5V @ 250μA - 30pF @ 25V 0.3nC @ 4.5V 7.9ns - N-CHANNEL AND P-CHANNEL 11.6 ns 500mA 2.5V 20V - 0.37A - 60V - - - - - METAL-OXIDE SEMICONDUCTOR 150°C Logic Level Gate - - - 5 pF 600μm 1.7mm 1.25mm No No SVHC ROHS3 Compliant Lead Free
                                          DMG1029SV-7
                                          DMG1029SV-7

                                          Diodes Incorporated
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

                                          Discrete Semiconductor Products

                                          Transistors - FETs, MOSFETs - Arrays definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - Arrays Product Listing: FDY4000CZ,AUIRF7342QTR,NTJD4105CT1G,DMG6601LVT-7,NTHD4102PT1G.Discrete Semiconductor Products type:Diodes - Zener - Single(113610),Diodes - Rectifiers - Single(97769),Transistors - FETs, MOSFETs - Single(61202),Transistors - Bipolar (BJT) - Single(34518),Diodes - Rectifiers - Arrays(17034) .Transistors - FETs, MOSFETs - Arrays has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.