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Изображение Тип Марка Объяснение Установленная цена Количество RoHS Factory Lead Time Lifecycle Status Contact Plating Mount Mounting Type Package / Case Surface Mount Number of Pins Weight Transistor Element Material Current - Continuous Drain (Id) @ 25℃ Number of Elements Turn Off Delay Time Operating Temperature Packaging Published Series JESD-609 Code Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Resistance Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature Voltage - Rated DC Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Reach Compliance Code Current Rating Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Reference Standard JESD-30 Code Number of Outputs Qualification Status Efficiency Output Type Max Output Current Input Voltage-Nom Configuration Row Spacing Number of Channels Voltage Analog IC - Other Type Element Configuration Current Operating Mode Power Dissipation Case Connection Turn On Delay Time Power - Max Max Output Voltage FET Type Transistor Application Rds On (Max) @ Id, Vgs Max Input Voltage Vgs(th) (Max) @ Id Halogen Free Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Drain to Source Voltage (Vdss) Polarity/Channel Type Fall Time (Typ) Switcher Configuration Continuous Drain Current (ID) Threshold Voltage Gate to Source Voltage (Vgs) Max Dual Supply Voltage Drain Current-Max (Abs) (ID) Drain-source On Resistance-Max Drain to Source Breakdown Voltage Pulsed Drain Current-Max (IDM) DS Breakdown Voltage-Min Avalanche Energy Rating (Eas) FET Technology Max Junction Temperature (Tj) FET Feature Rds On Max Nominal Vgs Feedback Cap-Max (Crss) Height Length Width Thickness Radiation Hardening REACH SVHC RoHS Status Lead Free
ON Semiconductor FDMC8030
Mfr. Тип
FDMC8030
Anlielectronics Тип

ON Semiconductor
Dual N-Channel 40 V 1.9 W 30 nC Silicon Surface Mount Mosfet - POWER 33-8
Сборник данных Сравнение
    Min.:1
    Mult.:1
    		 7 Weeks ACTIVE (Last Updated: 3 hours ago) - Surface Mount Surface Mount 8-PowerWDFN - 8 196mg SILICON - 1 19 ns -55°C~150°C TJ Tape & Reel (TR) 2007 PowerTrench® e4 yes Active 1 (Unlimited) 8 EAR99 - Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) - - AVALANCHE RATED - 800mW - - - - - - - - - - - - - - - - - - - 2 - - Dual - ENHANCEMENT MODE 1.9W DRAIN SOURCE 7 ns - - 2 N-Channel (Dual) SWITCHING 10m Ω @ 12A, 10V - 2.8V @ 250μA - 1975pF @ 20V 30nC @ 10V 3ns 40V - 3 ns - 12A 1.5V 12V - - - 40V 50A - - METAL-OXIDE SEMICONDUCTOR 150°C Logic Level Gate - - 30 pF 800μm 3mm 3mm - No - ROHS3 Compliant -
    FDMC8030
    FDMC8030

    ON Semiconductor
    RoHS :
    Инкапсуляция : -
    Есть складские запасы : -
    1 : -
    ON Semiconductor FDMC89521L
    Mfr. Тип
    FDMC89521L
    Anlielectronics Тип

    		ON Semiconductor
    MOSFET 60V Dual N-Channel Power Trench MOSFET
    Сборник данных Сравнение
      Min.:1
      Mult.:1
      		 6 Weeks ACTIVE (Last Updated: 1 day ago) - Surface Mount Surface Mount 8-PowerWDFN - 8 196mg SILICON 8.2A Ta 2 18 ns -55°C~150°C TJ Tape & Reel (TR) 2010 PowerTrench® e4 yes Active 1 (Unlimited) 8 EAR99 17MOhm Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) - - AVALANCHE ENERGY RATED - 800mW - - - - - - - - - - S-PDSO-N4 - - - - - - - - 2 - - Dual - ENHANCEMENT MODE 1.9W DRAIN 7.9 ns 1.9W Ta 16W Tc - 2 N-Channel (Dual) SWITCHING 17m Ω @ 8.2A, 10V - 3V @ 250μA - 1635pF @ 30V 24nC @ 10V 2.1ns - - 1.7 ns - 8.2A - 20V - - - 60V - - - METAL-OXIDE SEMICONDUCTOR 150°C Logic Level Gate - - 15 pF 800μm 3mm 3mm - No - ROHS3 Compliant Lead Free
      FDMC89521L
      FDMC89521L

      ON Semiconductor
      RoHS :
      Инкапсуляция : -
      Есть складские запасы : -
      1 : -
      Infineon Technologies BSZ15DC02KDHXTMA1
      Mfr. Тип
      BSZ15DC02KDHXTMA1
      Anlielectronics Тип

      		Infineon Technologies
      MOSFET N/P-CH 20V 8TDSON
      Сборник данных Сравнение
        Min.:1
        Mult.:1
        		 18 Weeks - - Surface Mount Surface Mount 8-PowerTDFN - 8 - SILICON 5.1A 3.2A 2 - -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101, HEXFET® - yes Active 1 (Unlimited) 5 EAR99 - - - - AVALANHE RATED - 2.5W DUAL NO LEAD NOT SPECIFIED - - - NOT SPECIFIED - - - S-PDSO-N5 - - - - - - COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE - - - - - - ENHANCEMENT MODE - DRAIN - 2.5W - N and P-Channel Complementary - 55m Ω @ 5.1A, 4.5V - 1.4V @ 110μA Halogen Free 419pF @ 10V 2.8nC @ 4.5V - - N-CHANNEL AND P-CHANNEL - - 3.2A - 12V 20V 5.1A 0.055Ohm - 20A - 11 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate, 2.5V Drive - - - - - - - - - ROHS3 Compliant Lead Free
        BSZ15DC02KDHXTMA1
        BSZ15DC02KDHXTMA1

        Infineon Technologies
        RoHS :
        Инкапсуляция : -
        Есть складские запасы : -
        1 : -
        ON Semiconductor FDS6930B
        Mfr. Тип
        FDS6930B
        Anlielectronics Тип

        		ON Semiconductor
        MOSFET 2N-CH 30V 5.5A 8SOIC
        Сборник данных Сравнение
          Min.:1
          Mult.:1
          		 10 Weeks ACTIVE (Last Updated: 2 days ago) - Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON - 2 16 ns -55°C~150°C TJ Tape & Reel (TR) 2010 PowerTrench® e3 yes Active 1 (Unlimited) 8 EAR99 38MOhm Tin (Sn) - - - 30V 2W - GULL WING NOT SPECIFIED - - 5.5A NOT SPECIFIED - - - - - Not Qualified - - - - - - - 30V - - 55A ENHANCEMENT MODE 2W - 6 ns 900mW - 2 N-Channel (Dual) SWITCHING 38m Ω @ 5.5A, 10V - 3V @ 250μA - 412pF @ 15V 3.8nC @ 5V 6ns - - 2 ns - 5.5A 1.9V 20V - - - 30V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - 1.9 V 60 pF 1.5mm 5mm 4mm - - No SVHC ROHS3 Compliant Lead Free
          FDS6930B
          FDS6930B

          ON Semiconductor
          RoHS :
          Инкапсуляция : -
          Есть складские запасы : -
          1 : -
          Infineon Technologies IRF7503TRPBF
          Mfr. Тип
          IRF7503TRPBF
          Anlielectronics Тип

          		Infineon Technologies
          MOSFET 2N-CH 30V 2.4A MICRO8
          Сборник данных Сравнение
            Min.:1
            Mult.:1
            		 12 Weeks - Tin Surface Mount Surface Mount 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) - 8 - SILICON - 2 12 ns -55°C~150°C TJ Tape & Reel (TR) 1997 HEXFET® e3 - Active 1 (Unlimited) 8 EAR99 135mOhm - - - ULTRA LOW RESISTANCE 30V 1.25W - GULL WING - - - 2.4A - IRF7503PBF - - - - - - - - - - - - - - Dual - ENHANCEMENT MODE 1.25W - 4.7 ns - - 2 N-Channel (Dual) SWITCHING 135m Ω @ 1.7A, 10V - 1V @ 250μA - 210pF @ 25V 12nC @ 10V 10ns - - 5.3 ns - 2.4A 1V 20V - - - 30V 14A - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - 1 V - 860μm 3mm 3mm - No No SVHC ROHS3 Compliant Lead Free
            IRF7503TRPBF
            IRF7503TRPBF

            Infineon Technologies
            RoHS :
            Инкапсуляция : -
            Есть складские запасы : -
            1 : -
            Texas Instruments CSD87353Q5D
            Mfr. Тип
            CSD87353Q5D
            Anlielectronics Тип

            		Texas Instruments
            30V, Nch synchronous buck NexFET MOSFET™, SON5x6 PowerBlock, 40A 8-LSON-CLIP -55 to 150
            Сборник данных Сравнение
              Min.:1
              Mult.:1
              		 12 Weeks ACTIVE (Last Updated: 1 day ago) - Surface Mount Surface Mount 8-PowerLDFN - 8 - - - - 23 ns -55°C~150°C TJ Cut Tape (CT) - NexFET™ e4 yes Active 1 (Unlimited) 8 EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) - - - - 12W - - 260 1 - - - CSD87353 8 - - 1 - 95 % Adjustable 25A 12V - - - - SWITCHING CONTROLLER Dual - - 12W - - - 1V 2 N-Channel (Half Bridge) - - 27V 2.1V @ 250μA - 3190pF @ 15V 19nC @ 4.5V 10ns 30V - 4.6 ns PUSH-PULL 40A - 1.15V - - - 30V - - - - - Logic Level Gate 3.4 Ω - - 1.5mm 5mm 6mm 1.5mm No - ROHS3 Compliant Contains Lead
              CSD87353Q5D
              CSD87353Q5D

              Texas Instruments
              RoHS :
              Инкапсуляция : -
              Есть складские запасы : -
              1 : -
              ON Semiconductor NVTJD4001NT1G
              Mfr. Тип
              NVTJD4001NT1G
              Anlielectronics Тип

              		ON Semiconductor
              Trans MOSFET N-CH 30V 0.25A 6-Pin SC-88 T/R
              Сборник данных Сравнение
                Min.:1
                Mult.:1
                		 10 Weeks ACTIVE (Last Updated: 13 hours ago) - - Surface Mount 6-TSSOP, SC-88, SOT-363 YES 6 - SILICON - 2 94 ns -55°C~150°C TJ Tape & Reel (TR) 2007 - e3 yes Active 1 (Unlimited) 6 EAR99 - Tin (Sn) - - - - 272mW - GULL WING - - - - - - 6 AEC-Q101 - - - - - - - - - - - - Dual - ENHANCEMENT MODE - - 17 ns - - 2 N-Channel (Dual) SWITCHING 1.5 Ω @ 10mA, 4V - 1.5V @ 100μA - 33pF @ 5V 1.3nC @ 5V 23ns 30V - 82 ns - 250mA - 20V - 0.25A 2.5Ohm - - 30V - METAL-OXIDE SEMICONDUCTOR - Standard - - 12 pF - - - - No - ROHS3 Compliant Lead Free
                NVTJD4001NT1G
                NVTJD4001NT1G

                ON Semiconductor
                RoHS :
                Инкапсуляция : -
                Есть складские запасы : -
                1 : -
                Diodes Incorporated DMN63D8LDW-7
                Mfr. Тип
                DMN63D8LDW-7
                Anlielectronics Тип

                		Diodes Incorporated
                MOSFET 2N-CH 30V 0.22A SOT363
                Сборник данных Сравнение
                  Min.:1
                  Mult.:1
                  		 15 Weeks - Tin Surface Mount Surface Mount 6-TSSOP, SC-88, SOT-363 - 6 6.010099mg SILICON - 2 12 ns -55°C~150°C TJ Tape & Reel (TR) 2012 - e3 yes Active 1 (Unlimited) 6 EAR99 - - - - HIGH RELIABILITY - 300mW - GULL WING 260 - - - 40 DMN63D8L - AEC-Q101 - - - - - - - - - - - - Dual - ENHANCEMENT MODE 300mW - 3.3 ns - - 2 N-Channel (Dual) SWITCHING 2.8 Ω @ 250mA, 10V - 1.5V @ 250μA - 22pF @ 25V 870nC @ 10V 3.2ns 30V - 6.3 ns - 220mA 1.5V 20V - - 4.5Ohm 30V - - - METAL-OXIDE SEMICONDUCTOR 150°C Logic Level Gate - - - 1.1mm 2.2mm 1.35mm - No No SVHC ROHS3 Compliant Lead Free
                  DMN63D8LDW-7
                  DMN63D8LDW-7

                  Diodes Incorporated
                  RoHS :
                  Инкапсуляция : -
                  Есть складские запасы : -
                  1 : -
                  Infineon Technologies IRF7389TRPBF
                  Mfr. Тип
                  IRF7389TRPBF
                  Anlielectronics Тип

                  		Infineon Technologies
                  MOSFET N/P-CH 30V 8-SOIC
                  Сборник данных Сравнение
                    Min.:1
                    Mult.:1
                    		 12 Weeks - Tin Surface Mount Surface Mount 8-SOIC (0.154, 3.90mm Width) - 8 - SILICON - 2 34 ns -55°C~150°C TJ Tape & Reel (TR) 2004 HEXFET® - - Active 1 (Unlimited) 8 EAR99 29mOhm - - - AVALANCHE RATED, ULTRA LOW RESISTANCE - 2.5W DUAL GULL WING - - - 7.3A - IRF7389PBF - - - - - - - - - - 6.3 mm 1 - - - - ENHANCEMENT MODE 2.5W - - - - N and P-Channel SWITCHING 29m Ω @ 5.8A, 10V - 1V @ 250μA - 650pF @ 25V 33nC @ 10V 13ns - N-CHANNEL AND P-CHANNEL 32 ns - 7.3A 1V 20V - - - 30V 30A - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - 1 V - 1.4986mm 4.9784mm 3.9878mm - No No SVHC ROHS3 Compliant Contains Lead, Lead Free
                    IRF7389TRPBF
                    IRF7389TRPBF

                    Infineon Technologies
                    RoHS :
                    Инкапсуляция : -
                    Есть складские запасы : -
                    1 : -
                    Infineon Technologies BSC0924NDIATMA1
                    Mfr. Тип
                    BSC0924NDIATMA1
                    Anlielectronics Тип

                    		Infineon Technologies
                    MOSFET N-Ch 30V,30V 40A,40A TISON-8
                    Сборник данных Сравнение
                      Min.:1
                      Mult.:1
                      		 18 Weeks - Tin Surface Mount Surface Mount 8-PowerTDFN - 8 - SILICON 17A 32A 2 - -55°C~150°C TJ Tape & Reel (TR) 2013 OptiMOS™ e3 no Active 1 (Unlimited) 6 EAR99 - - - - - - 1W - NO LEAD NOT SPECIFIED - not_compliant - NOT SPECIFIED - - - R-PDSO-N6 - - - - - - SERIES, 2 ELEMENTS WITH BUILT-IN DIODE - - - - - - ENHANCEMENT MODE - DRAIN SOURCE - - - 2 N-Channel (Dual) Asymmetrical - 5m Ω @ 20A, 10V - 2V @ 250μA - 1160pF @ 15V 10nC @ 4.5V - 30V - - - 32A - 20V - 1.3A 0.007Ohm - - 30V - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate, 4.5V Drive - - - - - - - - - ROHS3 Compliant -
                      BSC0924NDIATMA1
                      BSC0924NDIATMA1

                      Infineon Technologies
                      RoHS :
                      Инкапсуляция : -
                      Есть складские запасы : -
                      1 : -
                      ON Semiconductor NTJD1155LT1G
                      Mfr. Тип
                      NTJD1155LT1G
                      Anlielectronics Тип

                      		ON Semiconductor
                      MOSFET N/P-CH 8V 1.3A SOT-363
                      Сборник данных Сравнение
                        Min.:1
                        Mult.:1
                        		 15 Weeks ACTIVE (Last Updated: 20 hours ago) - - Surface Mount 6-TSSOP, SC-88, SOT-363 YES 6 - SILICON - 2 - -55°C~150°C TJ Tape & Reel (TR) 2004 - e3 yes Active 1 (Unlimited) 6 EAR99 130mOhm Tin (Sn) - - - - 400mW - GULL WING 260 - - 630mA 40 NTJD1155 6 - - - - - - - - - - - - - Dual - ENHANCEMENT MODE 400mW - - - - N and P-Channel SWITCHING 175m Ω @ 1.2A, 4.5V - 1V @ 250μA - - - - 8V N-CHANNEL AND P-CHANNEL - - 1.3A 1V 1V - - - -8V - - - METAL-OXIDE SEMICONDUCTOR - Standard - - - 1mm 2.2mm 1.35mm - No No SVHC ROHS3 Compliant Lead Free
                        NTJD1155LT1G
                        NTJD1155LT1G

                        ON Semiconductor
                        RoHS :
                        Инкапсуляция : -
                        Есть складские запасы : -
                        1 : -
                        ON Semiconductor NTJD5121NT1G
                        Mfr. Тип
                        NTJD5121NT1G
                        Anlielectronics Тип

                        		ON Semiconductor
                        MOSFET 2N-CH 60V 0.295A SOT363
                        Сборник данных Сравнение
                          Min.:1
                          Mult.:1
                          		 16 Weeks ACTIVE (Last Updated: 4 days ago) Tin - Surface Mount 6-TSSOP, SC-88, SOT-363 YES 6 - SILICON - 2 34 ns -55°C~150°C TJ Tape & Reel (TR) 2007 - e3 yes Active 1 (Unlimited) 6 EAR99 1.6Ohm - - - LOW THRESHOLD - 266mW - GULL WING - - - - - NTJD5121N 6 - - - - - - - - - - - - - Dual - ENHANCEMENT MODE 250W - 22 ns 250mW - 2 N-Channel (Dual) SWITCHING 1.6 Ω @ 500mA, 10V - 2.5V @ 250μA - 26pF @ 20V 0.9nC @ 4.5V 34ns 60V - 32 ns - 295mA 1.7V 20V - - - 60V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - 1.7 V - 1mm 2.2mm 1.35mm - No No SVHC ROHS3 Compliant Lead Free
                          NTJD5121NT1G
                          NTJD5121NT1G

                          ON Semiconductor
                          RoHS :
                          Инкапсуляция : -
                          Есть складские запасы : -
                          1 : -
                          ON Semiconductor FDME1024NZT
                          Mfr. Тип
                          FDME1024NZT
                          Anlielectronics Тип

                          		ON Semiconductor
                          Dual N-Channel Power Trench® MOSFET 20V, 3.8A, 66mO
                          Сборник данных Сравнение
                            Min.:1
                            Mult.:1
                            		 16 Weeks ACTIVE (Last Updated: 1 day ago) - Surface Mount Surface Mount 6-UFDFN Exposed Pad - 6 25.2mg SILICON - 2 15 ns -55°C~150°C TJ Tape & Reel (TR) 2008 PowerTrench® e4 yes Active 1 (Unlimited) 6 EAR99 - Nickel/Palladium/Gold (Ni/Pd/Au) - - ESD PROTECTION - 1.4W - - - - - - - - - - - - - - - - - - - - - - Dual - ENHANCEMENT MODE 1.3W DRAIN 4.5 ns 600mW - 2 N-Channel (Dual) SWITCHING 66m Ω @ 3.4A, 4.5V - 1V @ 250μA - 300pF @ 10V 4.2nC @ 4.5V 2ns 20V - 1.7 ns - 3.8A 700mV 8V - 3.4A - 20V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - 40 pF 500μm 1.6mm 1.6mm - No No SVHC ROHS3 Compliant -
                            FDME1024NZT
                            FDME1024NZT

                            ON Semiconductor
                            RoHS :
                            Инкапсуляция : -
                            Есть складские запасы : -
                            1 : -
                            Infineon Technologies IPG20N06S2L50ATMA1
                            Mfr. Тип
                            IPG20N06S2L50ATMA1
                            Anlielectronics Тип

                            		Infineon Technologies
                            MOSFET 2N-CH 55V 20A TDSON-8-4
                            Сборник данных Сравнение
                              Min.:1
                              Mult.:1
                              		 10 Weeks - - Surface Mount Surface Mount 8-PowerVDFN - 8 - SILICON - 2 15 ns -55°C~175°C TJ Tape & Reel (TR) 2003 OptiMOS™ - - Active 1 (Unlimited) - EAR99 - - - - - - 51W - FLAT NOT SPECIFIED - - - NOT SPECIFIED *PG20N06 - AEC-Q101 R-PDSO-F - - - - - - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - - - - - - ENHANCEMENT MODE - - 2 ns 51W - 2 N-Channel (Dual) - 50m Ω @ 15A, 10V - 2V @ 19μA Halogen Free 560pF @ 25V 17nC @ 10V 3ns - - 10 ns - 20A - 20V 55V - 0.05Ohm - - - 60 mJ METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - - ROHS3 Compliant Contains Lead
                              IPG20N06S2L50ATMA1
                              IPG20N06S2L50ATMA1

                              Infineon Technologies
                              RoHS :
                              Инкапсуляция : -
                              Есть складские запасы : -
                              1 : -
                              Infineon Technologies IPG20N04S4L11AATMA1
                              Mfr. Тип
                              IPG20N04S4L11AATMA1
                              Anlielectronics Тип

                              		Infineon Technologies
                              MOSFET 2N-CH 8TDSON
                              Сборник данных Сравнение
                                Min.:1
                                Mult.:1
                                		 12 Weeks - - Surface Mount Surface Mount, Wettable Flank 8-PowerVDFN - 8 - SILICON - 2 - -55°C~175°C TJ Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ e3 yes Active 1 (Unlimited) 6 - - Tin (Sn) - - LOGIC LEVEL COMPATIBLE - 41W - FLAT NOT SPECIFIED - not_compliant - NOT SPECIFIED - - - R-PDSO-F6 - - - - - - - - - - - - - ENHANCEMENT MODE 41W - - - - 2 N-Channel (Dual) - 11.6m Ω @ 17A, 10V - 2.2V @ 15μA Halogen Free 1990pF @ 25V 26nC @ 10V - - - - - 20A - 16V 40V - 0.0116Ohm - - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - - - - - - - ROHS3 Compliant Contains Lead
                                IPG20N04S4L11AATMA1
                                IPG20N04S4L11AATMA1

                                Infineon Technologies
                                RoHS :
                                Инкапсуляция : -
                                Есть складские запасы : -
                                1 : -
                                ON Semiconductor NVMD6N04R2G
                                Mfr. Тип
                                NVMD6N04R2G
                                Anlielectronics Тип

                                		ON Semiconductor
                                MOSFET
                                Сборник данных Сравнение
                                  Min.:1
                                  Mult.:1
                                  		 38 Weeks ACTIVE (Last Updated: 15 hours ago) Tin - Surface Mount 8-SOIC (0.154, 3.90mm Width) YES 8 - - - - - - Tape & Reel (TR) 2012 - e3 yes Active 1 (Unlimited) - EAR99 - - 150°C -55°C - - 1.29W - - NOT SPECIFIED - - - NOT SPECIFIED - 8 - - - - - - - - - - - - - Dual - - - - - - - 2 N-Channel (Dual) - 34m Ω @ 5.8A, 10V - 3V @ 250μA - 900pF @ 32V 30nC @ 10V - 40V - - - 4.6A - 20V - - - - - - - METAL-OXIDE SEMICONDUCTOR - Standard - - - - - - - - - ROHS3 Compliant Lead Free
                                  NVMD6N04R2G
                                  NVMD6N04R2G

                                  ON Semiconductor
                                  RoHS :
                                  Инкапсуляция : -
                                  Есть складские запасы : -
                                  1 : -
                                  Diodes Incorporated DMN2016UTS-13
                                  Mfr. Тип
                                  DMN2016UTS-13
                                  Anlielectronics Тип

                                  		Diodes Incorporated
                                  MOSFET 2N-CH 20V 8.58A 8-TSSOP
                                  Сборник данных Сравнение
                                    Min.:1
                                    Mult.:1
                                    		 16 Weeks - - Surface Mount Surface Mount 8-TSSOP (0.173, 4.40mm Width) - 8 157.991892mg SILICON - 2 59.38 ns -55°C~150°C TJ Tape & Reel (TR) 2009 - e3 - Active 1 (Unlimited) 8 EAR99 14.5mOhm Matte Tin (Sn) - - - - 880mW - GULL WING - - - - - DMN2016U 8 - - - - - - - - - - - - - Dual - ENHANCEMENT MODE 880mW - 10.39 ns - - 2 N-Channel (Dual) Common Drain SWITCHING 14.5m Ω @ 9.4A, 4.5V - 1V @ 250μA - 1495pF @ 10V 16.5nC @ 4.5V 11.66ns 20V - 16.27 ns - 8.58A - 8V - - - 20V - - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - 1.025mm 4.5mm 3.1mm - No No SVHC ROHS3 Compliant Lead Free
                                    DMN2016UTS-13
                                    DMN2016UTS-13

                                    Diodes Incorporated
                                    RoHS :
                                    Инкапсуляция : -
                                    Есть складские запасы : -
                                    1 : -
                                    Infineon Technologies BSO220N03MDGXUMA1
                                    Mfr. Тип
                                    BSO220N03MDGXUMA1
                                    Anlielectronics Тип

                                    		Infineon Technologies
                                    Trans MOSFET N-CH 30V 6A 8-Pin DSO
                                    Сборник данных Сравнение
                                      Min.:1
                                      Mult.:1
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                                      BSO220N03MDGXUMA1
                                      BSO220N03MDGXUMA1

                                      Infineon Technologies
                                      RoHS :
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                                      ON Semiconductor ECH8667-TL-H
                                      Mfr. Тип
                                      ECH8667-TL-H
                                      Anlielectronics Тип

                                      		ON Semiconductor
                                      ECH8667-TL-H Dual P-channel MOSFET Transistor; 5.5 A; 30 V; 8-Pin ECH
                                      Сборник данных Сравнение
                                        Min.:1
                                        Mult.:1
                                        		 2 Weeks ACTIVE (Last Updated: 2 days ago) - - Surface Mount 8-SMD, Flat Lead YES 8 - SILICON - 2 63 ns 150°C TJ Tape & Reel (TR) 2010 - e6 yes Active 1 (Unlimited) 8 EAR99 - Tin/Bismuth (Sn/Bi) - - - - 1.5W - - - - - - - - 8 - - - - - - - - - - - - - Dual - ENHANCEMENT MODE 1.5W - 7.2 ns - - 2 P-Channel (Dual) - 39m Ω @ 2.5A, 10V - - Halogen Free 600pF @ 10V 13nC @ 10V 23ns 30V - 42 ns - 5.5A - 20V - - 0.039Ohm 30V 40A - - METAL-OXIDE SEMICONDUCTOR - Logic Level Gate - - - 900μm 2.9mm 2.3mm - No - ROHS3 Compliant Lead Free
                                        ECH8667-TL-H
                                        ECH8667-TL-H

                                        ON Semiconductor
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                                        Infineon Technologies BSL306NH6327XTSA1
                                        Mfr. Тип
                                        BSL306NH6327XTSA1
                                        Anlielectronics Тип

                                        		Infineon Technologies
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                                        Сборник данных Сравнение
                                          Min.:1
                                          Mult.:1
                                          		 12 Weeks - - Surface Mount Surface Mount SOT-23-6 Thin, TSOT-23-6 - 6 - - - - 8.3 ns -55°C~150°C TJ Tape & Reel (TR) 2011 Automotive, AEC-Q101, OptiMOS™ - yes Obsolete 1 (Unlimited) - EAR99 - - - - - - 500mW - - NOT SPECIFIED - - - NOT SPECIFIED - - - - - - - - - - - - - - - - - - - - 4.4 ns 500mW - 2 N-Channel (Dual) - 57m Ω @ 2.3A, 10V - 2V @ 11μA Halogen Free 275pF @ 15V 1.6nC @ 5V 2.3ns - - 1.4 ns - 2.3A - 20V 30V - - - - - - - - Logic Level Gate, 4.5V Drive - - - 1mm 2.9mm 1.6mm - - - ROHS3 Compliant Lead Free
                                          BSL306NH6327XTSA1
                                          BSL306NH6327XTSA1

                                          Infineon Technologies
                                          RoHS :
                                          Инкапсуляция : -
                                          Есть складские запасы : -
                                          1 : -

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